PT3045570T - Diamantes de cristal único de grau de dispositivo eletrónico e respetivo método de produção - Google Patents

Diamantes de cristal único de grau de dispositivo eletrónico e respetivo método de produção

Info

Publication number
PT3045570T
PT3045570T PT15187789T PT15187789T PT3045570T PT 3045570 T PT3045570 T PT 3045570T PT 15187789 T PT15187789 T PT 15187789T PT 15187789 T PT15187789 T PT 15187789T PT 3045570 T PT3045570 T PT 3045570T
Authority
PT
Portugal
Prior art keywords
producing
electronic device
same
single crystal
crystal diamonds
Prior art date
Application number
PT15187789T
Other languages
English (en)
Inventor
Shanker Misra Devi
Tarun Alvarado
Original Assignee
Iia Tech Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SG10201500278YA external-priority patent/SG10201500278YA/en
Priority claimed from SG10201505413VA external-priority patent/SG10201505413VA/en
Application filed by Iia Tech Pte Ltd filed Critical Iia Tech Pte Ltd
Publication of PT3045570T publication Critical patent/PT3045570T/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PT15187789T 2015-01-14 2015-09-30 Diamantes de cristal único de grau de dispositivo eletrónico e respetivo método de produção PT3045570T (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG10201500278YA SG10201500278YA (en) 2015-01-14 2015-01-14 Electronic device grade diamonds and method of producing the same
EP15156409 2015-02-24
SG10201505413VA SG10201505413VA (en) 2015-01-14 2015-07-10 Electronic device grade single crystal diamonds and method of producing the same

Publications (1)

Publication Number Publication Date
PT3045570T true PT3045570T (pt) 2019-09-27

Family

ID=56116148

Family Applications (1)

Application Number Title Priority Date Filing Date
PT15187789T PT3045570T (pt) 2015-01-14 2015-09-30 Diamantes de cristal único de grau de dispositivo eletrónico e respetivo método de produção

Country Status (4)

Country Link
EP (1) EP3045570B1 (pt)
DK (1) DK3045570T3 (pt)
ES (1) ES2745312T3 (pt)
PT (1) PT3045570T (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105784648A (zh) * 2016-04-28 2016-07-20 广州标旗电子科技有限公司 一种光致发光钻石检测方法及装置
CN111943191B (zh) * 2020-08-04 2022-08-23 西安电子科技大学芜湖研究院 一种基于金刚石生长的plc工艺气体控制方法
CN114540790B (zh) * 2022-01-28 2023-08-01 徐州景澜新材料科技有限公司 Mpcvd法单晶金刚石制造装置及其制造方法
CN115161767B (zh) * 2022-07-25 2023-07-07 北京科技大学 一种(100)/(111)取向复合的高性能金刚石半导体的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2412853C (en) 2000-06-15 2009-08-25 Geoffrey Alan Scarsbrook Single crystal diamond prepared by cvd
CA2412855C (en) 2000-06-15 2009-10-20 Element Six (Pty) Ltd. Thick single crystal diamond layer method for making it and gemstones produced from the layer
WO2007081492A2 (en) * 2006-01-04 2007-07-19 Uab Research Foundation High growth rate methods of producing high-quality diamonds
GB0813491D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
JP5403519B2 (ja) * 2010-02-22 2014-01-29 独立行政法人物質・材料研究機構 結晶ダイヤモンド・エアギャップ構造体の作製方法

Also Published As

Publication number Publication date
ES2745312T3 (es) 2020-02-28
EP3045570A1 (en) 2016-07-20
DK3045570T3 (da) 2019-08-26
EP3045570B1 (en) 2019-05-22

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