KR20110020225A - 복사 방출 소자 및 복사 방출 소자 제조 방법 - Google Patents

복사 방출 소자 및 복사 방출 소자 제조 방법 Download PDF

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KR20110020225A
KR20110020225A KR1020107020373A KR20107020373A KR20110020225A KR 20110020225 A KR20110020225 A KR 20110020225A KR 1020107020373 A KR1020107020373 A KR 1020107020373A KR 20107020373 A KR20107020373 A KR 20107020373A KR 20110020225 A KR20110020225 A KR 20110020225A
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South Korea
Prior art keywords
contact
semiconductor chip
layer
carrier
contact layer
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KR1020107020373A
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English (en)
Korean (ko)
Inventor
마티아스 사바틸
시그프레이드 헤르만
베른드 바츠만
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20110020225A publication Critical patent/KR20110020225A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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    • H01L33/40—Materials therefor
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    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020107020373A 2008-06-18 2009-05-08 복사 방출 소자 및 복사 방출 소자 제조 방법 KR20110020225A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008028886.1 2008-06-18
DE102008028886.1A DE102008028886B4 (de) 2008-06-18 2008-06-18 Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements

Publications (1)

Publication Number Publication Date
KR20110020225A true KR20110020225A (ko) 2011-03-02

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KR1020107020373A KR20110020225A (ko) 2008-06-18 2009-05-08 복사 방출 소자 및 복사 방출 소자 제조 방법

Country Status (5)

Country Link
EP (1) EP2286470A1 (de)
KR (1) KR20110020225A (de)
CN (1) CN101971374B (de)
DE (1) DE102008028886B4 (de)
WO (1) WO2009152790A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999733B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8338317B2 (en) 2011-04-06 2012-12-25 Infineon Technologies Ag Method for processing a semiconductor wafer or die, and particle deposition device
DE102011010503A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102011010504A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektrischer Halbleiterchip
CN102368527A (zh) * 2011-10-27 2012-03-07 华灿光电股份有限公司 一种无需打线的发光二极管芯片及其制备方法
JP5913955B2 (ja) * 2011-12-19 2016-05-11 昭和電工株式会社 発光ダイオード及びその製造方法
JP5865695B2 (ja) * 2011-12-19 2016-02-17 昭和電工株式会社 発光ダイオード及びその製造方法
CN105938862A (zh) * 2016-05-24 2016-09-14 华灿光电(苏州）有限公司 一种GaN基发光二极管芯片及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19517697A1 (de) * 1995-05-13 1996-11-14 Telefunken Microelectron Strahlungsemittierende Diode
DE10017336C2 (de) 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
JP4055405B2 (ja) * 2001-12-03 2008-03-05 ソニー株式会社 電子部品及びその製造方法
US7080932B2 (en) * 2004-01-26 2006-07-25 Philips Lumileds Lighting Company, Llc LED with an optical system to increase luminance by recycling emitted light
US7329905B2 (en) 2004-06-30 2008-02-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
KR100878433B1 (ko) 2005-05-18 2009-01-13 삼성전기주식회사 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법
US7998761B2 (en) * 2006-01-09 2011-08-16 Seoul Opto Device Co., Ltd. Light emitting diode with ITO layer and method for fabricating the same
KR100804735B1 (ko) * 2006-03-23 2008-02-19 연세대학교 산학협력단 프레넬 렌즈 및 이를 이용한 ｌｅｄ 조명 장치
KR20070111091A (ko) * 2006-05-16 2007-11-21 삼성전기주식회사 질화물계 반도체 발광다이오드
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
JP2008078525A (ja) 2006-09-25 2008-04-03 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子

Also Published As

Publication number Publication date
CN101971374B (zh) 2013-03-13
EP2286470A1 (de) 2011-02-23
DE102008028886A1 (de) 2009-12-24
CN101971374A (zh) 2011-02-09
DE102008028886B4 (de) 2024-02-29
WO2009152790A1 (de) 2009-12-23

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