KR20100114503A - 자연 산화물 성장을 감소시키기 위한 플라즈마 세정 프로세스에 의한 패시베이션 층 형성 - Google Patents
자연 산화물 성장을 감소시키기 위한 플라즈마 세정 프로세스에 의한 패시베이션 층 형성 Download PDFInfo
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- KR20100114503A KR20100114503A KR1020107016368A KR20107016368A KR20100114503A KR 20100114503 A KR20100114503 A KR 20100114503A KR 1020107016368 A KR1020107016368 A KR 1020107016368A KR 20107016368 A KR20107016368 A KR 20107016368A KR 20100114503 A KR20100114503 A KR 20100114503A
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- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- ATVLVRVBCRICNU-UHFFFAOYSA-N trifluorosilicon Chemical compound F[Si](F)F ATVLVRVBCRICNU-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/962,791 US7780793B2 (en) | 2004-02-26 | 2007-12-21 | Passivation layer formation by plasma clean process to reduce native oxide growth |
| US11/962,791 | 2007-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100114503A true KR20100114503A (ko) | 2010-10-25 |
Family
ID=40825013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107016368A Ceased KR20100114503A (ko) | 2007-12-21 | 2008-12-18 | 자연 산화물 성장을 감소시키기 위한 플라즈마 세정 프로세스에 의한 패시베이션 층 형성 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7780793B2 (enExample) |
| JP (1) | JP2011508433A (enExample) |
| KR (1) | KR20100114503A (enExample) |
| CN (1) | CN101903984B (enExample) |
| TW (1) | TWI438839B (enExample) |
| WO (1) | WO2009085958A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101524945B1 (ko) * | 2013-07-19 | 2015-06-10 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 집적회로 구조물 및 그 형성방법 |
| KR20210076166A (ko) * | 2018-11-13 | 2021-06-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 실리사이드들의 선택적 증착 및 선택적 산화물 제거 |
Families Citing this family (208)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| KR101524945B1 (ko) * | 2013-07-19 | 2015-06-10 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 집적회로 구조물 및 그 형성방법 |
| US9953975B2 (en) | 2013-07-19 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming STI regions in integrated circuits |
| US11450661B2 (en) | 2013-07-19 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming STI regions to separate semiconductor Fins |
| KR20210076166A (ko) * | 2018-11-13 | 2021-06-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 실리사이드들의 선택적 증착 및 선택적 산화물 제거 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011508433A (ja) | 2011-03-10 |
| CN101903984B (zh) | 2012-10-03 |
| TW200935513A (en) | 2009-08-16 |
| TWI438839B (zh) | 2014-05-21 |
| US7780793B2 (en) | 2010-08-24 |
| WO2009085958A2 (en) | 2009-07-09 |
| WO2009085958A3 (en) | 2009-09-03 |
| CN101903984A (zh) | 2010-12-01 |
| US20080160210A1 (en) | 2008-07-03 |
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