KR20100099254A - 반도체 발광 소자 및 이의 제조 방법 - Google Patents

반도체 발광 소자 및 이의 제조 방법 Download PDF

Info

Publication number
KR20100099254A
KR20100099254A KR1020107014831A KR20107014831A KR20100099254A KR 20100099254 A KR20100099254 A KR 20100099254A KR 1020107014831 A KR1020107014831 A KR 1020107014831A KR 20107014831 A KR20107014831 A KR 20107014831A KR 20100099254 A KR20100099254 A KR 20100099254A
Authority
KR
South Korea
Prior art keywords
semiconductor structure
light
potential well
etch
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107014831A
Other languages
English (en)
Korean (ko)
Inventor
마이클 에이 하세
토마스 제이 밀러
시아오광 선
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20100099254A publication Critical patent/KR20100099254A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials

Landscapes

  • Led Devices (AREA)
  • Weting (AREA)
KR1020107014831A 2007-12-10 2008-11-07 반도체 발광 소자 및 이의 제조 방법 Withdrawn KR20100099254A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260807P 2007-12-10 2007-12-10
US61/012,608 2007-12-10

Publications (1)

Publication Number Publication Date
KR20100099254A true KR20100099254A (ko) 2010-09-10

Family

ID=40756058

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107014831A Withdrawn KR20100099254A (ko) 2007-12-10 2008-11-07 반도체 발광 소자 및 이의 제조 방법

Country Status (6)

Country Link
US (1) US20110121319A1 (https=)
EP (1) EP2232590A4 (https=)
JP (1) JP2011507273A (https=)
KR (1) KR20100099254A (https=)
CN (1) CN101939855B (https=)
WO (1) WO2009075973A2 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027580A2 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source having light blocking components
CN102197554A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 单色光源
JP2012502473A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 窒化ガリウムレーザダイオードによって光励起された、ヒートシンク上のｉｉ−ｖｉ多重量子井戸垂直共振器面発光レーザー
CN102318089A (zh) 2008-12-24 2012-01-11 3M创新有限公司 具有双面波长转换器的光产生装置
JP2012514335A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側の波長変換器及びそれを使用する光生成デバイスの作製方法
KR20120092673A (ko) * 2009-11-18 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ⅱ-ⅵ족 반도체를 위한 신규한 습식 에칭제 및 방법
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof
US8975614B2 (en) 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
KR20140111876A (ko) 2013-03-12 2014-09-22 삼성디스플레이 주식회사 표시 장치
CN103579503A (zh) * 2013-11-14 2014-02-12 吉林大学 一种利用光交联聚合物对有机电子器件进行薄膜封装的方法
CN105849915B (zh) * 2014-01-06 2019-04-02 亮锐控股有限公司 具有成形衬底的半导体发光器件和制造所述器件的方法
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
CN104810444B (zh) * 2015-03-04 2018-01-09 华灿光电(苏州）有限公司 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法
US9847454B2 (en) * 2015-10-02 2017-12-19 Epistar Corporation Light-emitting device
CN109564930B (zh) * 2016-05-13 2023-08-15 原子能与替代能源委员会 用于生产包括多个氮化镓二极管的光电设备的方法
JP6760141B2 (ja) * 2017-03-07 2020-09-23 信越半導体株式会社 発光素子及びその製造方法
US20190123035A1 (en) * 2017-10-19 2019-04-25 Samsung Electronics Co., Ltd. Method of performing die-based heterogeneous integration and devices including integrated dies

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584428A (en) * 1984-09-12 1986-04-22 Hughes Aircraft Company Solar energy converter employing a fluorescent wavelength shifter
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
JPH02267529A (ja) * 1989-04-07 1990-11-01 Fuji Photo Film Co Ltd 光波長変換素子およびその製造方法
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JP3215297B2 (ja) * 1995-07-18 2001-10-02 沖電気工業株式会社 半導体発光素子の製造方法
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JP3768302B2 (ja) * 1996-09-13 2006-04-19 同和鉱業株式会社 化合物半導体素子の製造方法
JPH11154774A (ja) * 1997-08-05 1999-06-08 Canon Inc 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
JP3334598B2 (ja) * 1998-03-25 2002-10-15 日本電気株式会社 ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2000012981A (ja) * 1998-06-19 2000-01-14 Canon Inc 面型半導体光デバイスおよびその作製方法
JP2002118327A (ja) * 2000-10-06 2002-04-19 Furukawa Electric Co Ltd:The 化合物半導体装置の製造方法
TW493286B (en) * 2001-02-06 2002-07-01 United Epitaxy Co Ltd Light-emitting diode and the manufacturing method thereof
US20050167684A1 (en) * 2004-01-21 2005-08-04 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based phosphor material
US20080231170A1 (en) * 2004-01-26 2008-09-25 Fukudome Masato Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device
US7208768B2 (en) * 2004-04-30 2007-04-24 Sharp Laboratories Of America, Inc. Electroluminescent device
WO2006046553A1 (ja) * 2004-10-28 2006-05-04 Matsushita Electric Industrial Co., Ltd. 表示装置及び表示装置の駆動方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
JP4837295B2 (ja) * 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
DE102005047152A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
JP2007157940A (ja) * 2005-12-02 2007-06-21 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
KR100730072B1 (ko) * 2005-12-06 2007-06-20 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
JP2007250629A (ja) * 2006-03-14 2007-09-27 Toshiba Corp 発光装置及びその製造方法、並びに蛍光パターン形成物
CN101455123A (zh) * 2006-05-26 2009-06-10 富士胶片株式会社 表面发射型电致发光器件
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US8188494B2 (en) * 2006-06-28 2012-05-29 Hewlett-Packard Development Company, L.P. Utilizing nanowire for generating white light
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
US8578427B2 (en) * 2008-03-04 2013-11-05 The Directv Group, Inc. Method for swapping channel assignments in a broadcast system

Also Published As

Publication number Publication date
EP2232590A2 (en) 2010-09-29
CN101939855B (zh) 2013-10-30
WO2009075973A3 (en) 2009-08-13
EP2232590A4 (en) 2013-12-25
CN101939855A (zh) 2011-01-05
JP2011507273A (ja) 2011-03-03
US20110121319A1 (en) 2011-05-26
WO2009075973A2 (en) 2009-06-18

Similar Documents

Publication Publication Date Title
KR20100099254A (ko) 반도체 발광 소자 및 이의 제조 방법
CN101673794B (zh) 发光元件
KR101550117B1 (ko) 광전 소자 및 그 제조 방법
US20050017254A1 (en) Light emitting diode and method of making the same
JP2009540614A (ja) 再発光半導体構成体を有する適応型ｌｅｄデバイス
US8399906B2 (en) AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereof
WO2015120118A1 (en) Manufacturable laser diode
JP2012502472A (ja) 単色光源
US20070290216A1 (en) Semiconductor light emitting element, manufacturing method therefor, and compound semiconductor light emitting diode
JPH11505066A (ja) エピタキシャルオーミックコンタクトを含む▲ｉｉ▼−▲ｖｉ▼族半導体材料の集積ヘテロ構造およびその製造方法
US20120097921A1 (en) Cadmium-free Re-Emitting Semiconductor Construction
JP2010114337A (ja) 発光素子
KR101722110B1 (ko) 그레이드 영역을 포함하는 반도체 발광 장치
US9312439B2 (en) Semiconductor light emitting device
TW200810156A (en) LED device with re-emitting semiconductor construction and reflector
US20150091046A1 (en) HIGH-EFFICIENCY AlGaInP LIGHT-EMITTING DIODE GROWN DIRECTLY ON TRANSPARENT SUBSTRATE AND MANUFACTURING METHOD THEREOF
JP2009059851A (ja) 半導体発光ダイオード
EP4338196A2 (en) Iii-nitride based devices grown on a thin template on thermally decomposed material
US8941105B2 (en) Zinc oxide based compound semiconductor light emitting device
Hayashi et al. Thermally engineered flip-chip InGaN/GaN well-ordered nanocolumn array LEDs
CN113851563A (zh) 一种薄膜型半导体芯片结构及应用其的光电器件
TW201438276A (zh) 光電元件及其製造方法
KR20200006848A (ko) 반도체 소자
Sviechnikov et al. Optoelectronics: radiation sources and detectors
JP2006270073A (ja) 発光ダイオード及びその製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100705

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid