KR20100078862A - 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 - Google Patents
박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 Download PDFInfo
- Publication number
- KR20100078862A KR20100078862A KR1020080137241A KR20080137241A KR20100078862A KR 20100078862 A KR20100078862 A KR 20100078862A KR 1020080137241 A KR1020080137241 A KR 1020080137241A KR 20080137241 A KR20080137241 A KR 20080137241A KR 20100078862 A KR20100078862 A KR 20100078862A
- Authority
- KR
- South Korea
- Prior art keywords
- metal catalyst
- semiconductor layer
- layer
- region
- crystallization region
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 55
- 239000010409 thin film Substances 0.000 title claims description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 171
- 239000002184 metal Substances 0.000 claims abstract description 171
- 239000003054 catalyst Substances 0.000 claims abstract description 151
- 238000002425 crystallisation Methods 0.000 claims abstract description 147
- 230000008025 crystallization Effects 0.000 claims abstract description 137
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 185
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000012044 organic layer Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000003863 metallic catalyst Substances 0.000 abstract 3
- 230000008569 process Effects 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000007715 excimer laser crystallization Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
문턱전압 (Vth) |
전자이동도 (㎠/Vs) |
S팩터 (V/dec) |
오프전류 (A/㎛) |
구동전압범위 (V) |
|
실시예 | -1.82 | 59.74 | 0.48 | 3.20×10-12 | -2.18 |
비교예 | -2.52 | 51.44 | 0.58 | 6.02× 10-12 | -2.38 |
Claims (16)
- 기판;상기 기판 상에 위치하며, 제 1 금속촉매 결정화 영역과 제 2 금속촉매 결정화 영역을 포함하는 소스/드레인 영역 및 제 2 금속촉매 결정화 영역을 포함하는 채널영역을 포함하는 반도체층;상기 반도체층의 채널영역에 대응하게 위치하는 게이트 전극;상기 반도체층과 상기 게이트 전극을 절연시키기 위하여 상기 반도체층과 상기 게이트 전극 사이에 위치하는 게이트 절연막; 및상기 게이트 전극과 절연되며, 상기 소스/드레인 영역과 전기적으로 각각 연결되는 소스/드레인 전극을 포함하는 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 반도체층은 상부에 게이트 전극을 포함하는 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 반도체층은 하부에 게이트 전극을 포함하는 것을 특징으로 하는 박막트 랜지스터.
- 제 1항에 있어서,상기 제 2 금속촉매 결정화 영역의 결정립은 상기 제 1 금속촉매 결정화 영역의 결정립보다 큰 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 소스/드레인 전극의 상부 또는 하부에 절연막을 더 포함하는 것을 특징으로 하는 박막트랜지스터.
- 기판을 형성하고,상기 기판 상에 위치하며, 제 1 금속촉매 결정화 영역과 제 2 금속촉매 결정화 영역을 포함하는 소스/드레인 영역 및 제 2 금속촉매 결정화 영역을 포함하는 채널영역을 포함하는 반도체층을 형성하고,상기 반도체층의 채널영역에 대응하게 위치하는 게이트 전극을 형성하고,상기 반도체층과 상기 게이트 전극을 절연시키기 위하여 상기 반도체층과 상기 게이트 전극 사이에 위치하는 게이트 절연막을 형성하고,상기 소스/드레인 영역과 전기적으로 각각 연결되는 소스/드레인 전극을 형성하고,상기 소스/드레인 전극 하부에 위치하는 제 1 절연막을 형성하고,상기 소스/드레인 전극 상부에 위치하는 제 2 절연막을 형성하는 것을 포함하는 박막트랜지스터의 제조방법.
- 제 6항에 있어서,상기 제 1 금속촉매 결정화 영역은 상기 제 1 비정질 실리콘층 상에 캡핑층과 금속촉매층을 형성한 후, 열처리하여 형성하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 6항에 있어서,상기 제 2 금속촉매 결정화 영역은 상기 제 1 금속촉매 결정화 영역 상에 제 2 비정질 실리콘층을 형성한 후, 열처리하여 형성하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 6항에 있어서,상기 금속촉매는 Ni, Pd, Ag, Au, Al, Sn, Sb, Cu, Tr, 및 Cd로 이루어진 군에서 선택되는 어느 하나를 사용하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 6항에 있어서,상기 반도체층의 제 1 금속촉매 결정화 영역은 상기 제 2 금속촉매 결정화 영역 보다 작게 패터닝하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 6항에 있어서,상기 제 1 금속촉매 결정화 영역은 상기 제 2 금속촉매 결정화 영역을 하부에 포함하도록 형성하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 기판;상기 기판 상에 위치하며, 제 1 금속촉매 결정화 영역과 제 2 금속촉매 결정화 영역을 포함하는 소스/드레인 영역 및 제 2 금속촉매 결정화 영역을 포함하는 채널영역을 포함하는 반도체층;상기 반도체층의 채널영역에 대응하게 위치하는 게이트 전극;상기 반도체층과 상기 게이트 전극을 절연시키기 위하여 상기 반도체층과 상기 게이트 전극 사이에 위치하는 게이트 절연막;상기 게이트 전극과 절연되며, 상기 소스/드레인 영역과 전기적으로 각각 연결되는 소스/드레인 전극; 및상기 소스/드레인 전극과 전기적으로 연결되는 제 1 전극, 유기막층 및 제 2 전극을 포함하는 유기전계발광표시장치.
- 제 12항에 있어서,상기 반도체층은 상부에 게이트 전극을 포함하는 것을 특징으로 하는 유기전계발광표시장치.
- 제 12항에 있어서,상기 반도체층은 하부에 게이트 전극을 포함하는 것을 특징으로 하는 유기전계발광표시장치.
- 제 12항에 있어서,상기 제 2 금속촉매 결정화 영역의 결정립은 상기 제 1 금속촉매 결정화 영 역의 결정립보다 큰 것을 특징으로 하는 유기전계발광표시장치.
- 제 14항에 있어서,상기 소스/드레인 전극의 상부 또는 하부에 절연막을 더 포함하는 것을 특징으로 하는 유기전계발광표시장치.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080137241A KR101049808B1 (ko) | 2008-12-30 | 2008-12-30 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
US12/649,718 US8294158B2 (en) | 2008-12-30 | 2009-12-30 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080137241A KR101049808B1 (ko) | 2008-12-30 | 2008-12-30 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100078862A true KR20100078862A (ko) | 2010-07-08 |
KR101049808B1 KR101049808B1 (ko) | 2011-07-15 |
Family
ID=42283751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080137241A KR101049808B1 (ko) | 2008-12-30 | 2008-12-30 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8294158B2 (ko) |
KR (1) | KR101049808B1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101809661B1 (ko) * | 2011-06-03 | 2017-12-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치 |
TWI514572B (zh) * | 2011-06-10 | 2015-12-21 | E Ink Holdings Inc | 金屬氧化物半導體電晶體 |
WO2013047629A1 (en) | 2011-09-29 | 2013-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN104025301B (zh) * | 2011-10-14 | 2017-01-18 | 株式会社半导体能源研究所 | 半导体装置 |
KR20160063515A (ko) * | 2014-11-26 | 2016-06-07 | 삼성디스플레이 주식회사 | 트랜지스터, 이를 구비한 유기발광 표시장치, 및 유기발광 표시장치 제조방법 |
KR102415752B1 (ko) | 2015-03-24 | 2022-07-01 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20180045964A (ko) | 2016-10-26 | 2018-05-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
KR102484363B1 (ko) | 2017-07-05 | 2023-01-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3160172B2 (ja) * | 1994-12-27 | 2001-04-23 | シャープ株式会社 | 半導体素子の製造方法および表示装置用基板の製造方法 |
US7238557B2 (en) * | 2001-11-14 | 2007-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100611762B1 (ko) * | 2004-08-20 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
KR100699991B1 (ko) * | 2004-08-23 | 2007-03-26 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
KR100685848B1 (ko) * | 2005-12-16 | 2007-02-22 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR100770266B1 (ko) * | 2006-11-10 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100875432B1 (ko) * | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
-
2008
- 2008-12-30 KR KR1020080137241A patent/KR101049808B1/ko active IP Right Grant
-
2009
- 2009-12-30 US US12/649,718 patent/US8294158B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8294158B2 (en) | 2012-10-23 |
KR101049808B1 (ko) | 2011-07-15 |
US20100163885A1 (en) | 2010-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101049805B1 (ko) | 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치 | |
KR100882909B1 (ko) | 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법 | |
KR101041141B1 (ko) | 유기전계발광표시장치 및 그의 제조방법 | |
KR100864884B1 (ko) | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 | |
KR101015849B1 (ko) | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 | |
KR101049808B1 (ko) | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 | |
KR101049799B1 (ko) | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 | |
KR20080111693A (ko) | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 | |
KR20100007609A (ko) | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 | |
KR101030027B1 (ko) | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 | |
KR101094295B1 (ko) | 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법 | |
KR101049806B1 (ko) | 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치 | |
KR101041142B1 (ko) | 박막트랜지스터 및 그의 제조방법, 그를 포함하는 유기전계발광표시장치 및 그의 제조방법 | |
KR101049810B1 (ko) | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140701 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150701 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160629 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170704 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180702 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190701 Year of fee payment: 9 |