KR20100014547A - 탄소 나노튜브 직물 요소와 조종 요소를 포함하는 메모리 셀과 이를 형성하는 방법 - Google Patents

탄소 나노튜브 직물 요소와 조종 요소를 포함하는 메모리 셀과 이를 형성하는 방법 Download PDF

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KR20100014547A
KR20100014547A KR1020097019877A KR20097019877A KR20100014547A KR 20100014547 A KR20100014547 A KR 20100014547A KR 1020097019877 A KR1020097019877 A KR 1020097019877A KR 20097019877 A KR20097019877 A KR 20097019877A KR 20100014547 A KR20100014547 A KR 20100014547A
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conductor
carbon nanotube
memory cell
level
diode
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Korean (ko)
Inventor
에스. 브래드 허너
로이 이. 쉐얼라인
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쌘디스크 3디 엘엘씨
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Priority claimed from US11/692,144 external-priority patent/US7667999B2/en
Priority claimed from US11/692,148 external-priority patent/US7982209B2/en
Application filed by 쌘디스크 3디 엘엘씨 filed Critical 쌘디스크 3디 엘엘씨
Publication of KR20100014547A publication Critical patent/KR20100014547A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
KR1020097019877A 2007-03-27 2008-03-26 탄소 나노튜브 직물 요소와 조종 요소를 포함하는 메모리 셀과 이를 형성하는 방법 Ceased KR20100014547A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/692,144 US7667999B2 (en) 2007-03-27 2007-03-27 Method to program a memory cell comprising a carbon nanotube fabric and a steering element
US11/692,144 2007-03-27
US11/692,148 US7982209B2 (en) 2007-03-27 2007-03-27 Memory cell comprising a carbon nanotube fabric element and a steering element
US11/692,148 2007-03-27

Publications (1)

Publication Number Publication Date
KR20100014547A true KR20100014547A (ko) 2010-02-10

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KR1020097019877A Ceased KR20100014547A (ko) 2007-03-27 2008-03-26 탄소 나노튜브 직물 요소와 조종 요소를 포함하는 메모리 셀과 이를 형성하는 방법

Country Status (6)

Country Link
EP (1) EP2140492A1 (enExample)
JP (1) JP2010522991A (enExample)
KR (1) KR20100014547A (enExample)
CN (1) CN101681921B (enExample)
TW (1) TW200903782A (enExample)
WO (1) WO2008118486A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104613545A (zh) * 2015-02-02 2015-05-13 广东美的制冷设备有限公司 空调器室内机及空调器的出风控制方法
CN104613620A (zh) * 2015-02-02 2015-05-13 广东美的制冷设备有限公司 空调器及其出风控制方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100655078B1 (ko) * 2005-09-16 2006-12-08 삼성전자주식회사 비트 레지스터링 레이어를 갖는 반도체 메모리 장치 및그의 구동 방법
US8294098B2 (en) 2007-03-30 2012-10-23 Tsinghua University Transmission electron microscope micro-grid
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
EP2340562A2 (en) * 2008-10-23 2011-07-06 Sandisk 3D LLC Carbon-based memory elements exhibiting reduced delamination and methods of forming the same
KR20100052080A (ko) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
JP2010123646A (ja) * 2008-11-18 2010-06-03 Toshiba Corp 電気素子、スイッチング素子、メモリ素子、スイッチング方法及びメモリ方法
US8114765B2 (en) 2008-12-31 2012-02-14 Sandisk 3D Llc Methods for increased array feature density
US8084347B2 (en) 2008-12-31 2011-12-27 Sandisk 3D Llc Resist feature and removable spacer pitch doubling patterning method for pillar structures
US8023310B2 (en) * 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
CN101848564B (zh) 2009-03-27 2012-06-20 清华大学 加热器件
US7955981B2 (en) * 2009-06-30 2011-06-07 Sandisk 3D Llc Method of making a two-terminal non-volatile memory pillar device with rounded corner
CN101998706B (zh) 2009-08-14 2015-07-01 清华大学 碳纳米管织物及应用该碳纳米管织物的发热体
CN101991364B (zh) 2009-08-14 2013-08-28 清华大学 电烤箱
HRP20190016T1 (hr) 2009-08-17 2019-03-08 Intellikine, Llc Heterociklički spojevi i njihova upotreba
CN102019039B (zh) 2009-09-11 2013-08-21 清华大学 红外理疗设备
JP5611574B2 (ja) 2009-11-30 2014-10-22 株式会社東芝 抵抗変化メモリ及びその製造方法
US9096590B2 (en) 2010-05-24 2015-08-04 Intellikine Llc Substituted benzoxazoles as PI3 kinase inhibitors
JP5808826B2 (ja) 2011-02-23 2015-11-10 インテリカイン， エルエルシー 複素環化合物およびその使用
EP3801069A4 (en) 2018-06-01 2022-03-16 Cornell University MULTIPLE THERAPY FOR DISEASE OR DISORDER ASSOCIATED WITH PI3K
US10580778B2 (en) * 2018-07-18 2020-03-03 Nanya Technology Corporation Dynamic random access memory structure and method for preparing the same
US11502105B2 (en) * 2021-04-06 2022-11-15 Macronix International Co., Ltd. Semiconductor structure and a method for manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
CN1849718A (zh) * 2003-07-09 2006-10-18 先进微装置公司 存储器件和使用及制造该器件的方法
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
JP2005343744A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd カーボンナノチューブ半導体の製造方法およびカーボンナノチューブ構造体
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US20060273298A1 (en) * 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series
JP4975289B2 (ja) * 2005-09-06 2012-07-11 国立大学法人名古屋大学 カーボンナノウォールを用いた電子素子
WO2008021912A2 (en) * 2006-08-08 2008-02-21 Nantero, Inc. Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104613545A (zh) * 2015-02-02 2015-05-13 广东美的制冷设备有限公司 空调器室内机及空调器的出风控制方法
CN104613620A (zh) * 2015-02-02 2015-05-13 广东美的制冷设备有限公司 空调器及其出风控制方法

Also Published As

Publication number Publication date
CN101681921A (zh) 2010-03-24
CN101681921B (zh) 2013-03-27
JP2010522991A (ja) 2010-07-08
WO2008118486A1 (en) 2008-10-02
EP2140492A1 (en) 2010-01-06
TW200903782A (en) 2009-01-16

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