KR20100009604A - 발광 시스템 - Google Patents
발광 시스템 Download PDFInfo
- Publication number
- KR20100009604A KR20100009604A KR1020097027116A KR20097027116A KR20100009604A KR 20100009604 A KR20100009604 A KR 20100009604A KR 1020097027116 A KR1020097027116 A KR 1020097027116A KR 20097027116 A KR20097027116 A KR 20097027116A KR 20100009604 A KR20100009604 A KR 20100009604A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- light emitting
- layer
- emitting device
- generating region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000463 material Substances 0.000 claims description 138
- 238000000605 extraction Methods 0.000 claims description 70
- 238000000034 method Methods 0.000 abstract description 27
- 239000010410 layer Substances 0.000 description 286
- 230000006870 function Effects 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 20
- 229910052709 silver Inorganic materials 0.000 description 20
- 239000004332 silver Substances 0.000 description 20
- 238000004364 calculation method Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
- 210000004027 cell Anatomy 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000000565 sealant Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 230000001419 dependent effect Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000009877 rendering Methods 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002428 photodynamic therapy Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000013079 quasicrystal Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- LWEAHXKXKDCSIE-UHFFFAOYSA-M 2,3-di(propan-2-yl)naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S([O-])(=O)=O)=C(C(C)C)C(C(C)C)=CC2=C1 LWEAHXKXKDCSIE-UHFFFAOYSA-M 0.000 description 1
- -1 2-ethylhexyloxy Chemical group 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000000349 chromosome Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000013308 plastic optical fiber Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
Landscapes
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Applications Claiming Priority (36)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46288903P | 2003-04-15 | 2003-04-15 | |
| US60/462,889 | 2003-04-15 | ||
| US47419903P | 2003-05-29 | 2003-05-29 | |
| US60/474,199 | 2003-05-29 | ||
| US47568203P | 2003-06-04 | 2003-06-04 | |
| US60/475,682 | 2003-06-04 | ||
| US50365303P | 2003-09-17 | 2003-09-17 | |
| US50366103P | 2003-09-17 | 2003-09-17 | |
| US50367103P | 2003-09-17 | 2003-09-17 | |
| US50367203P | 2003-09-17 | 2003-09-17 | |
| US50365403P | 2003-09-17 | 2003-09-17 | |
| US60/503,672 | 2003-09-17 | ||
| US60/503,661 | 2003-09-17 | ||
| US60/503,671 | 2003-09-17 | ||
| US60/503,653 | 2003-09-17 | ||
| US60/503,654 | 2003-09-17 | ||
| US51380703P | 2003-10-23 | 2003-10-23 | |
| US60/513,807 | 2003-10-23 | ||
| US51476403P | 2003-10-27 | 2003-10-27 | |
| US60/514,764 | 2003-10-27 | ||
| US10/724,006 | 2003-11-26 | ||
| US10/724,006 US7084434B2 (en) | 2003-04-15 | 2003-11-26 | Uniform color phosphor-coated light-emitting diode |
| US10/723,987 | 2003-11-26 | ||
| US10/724,029 | 2003-11-26 | ||
| US10/723,987 US7211831B2 (en) | 2003-04-15 | 2003-11-26 | Light emitting device with patterned surfaces |
| US10/724,005 US7083993B2 (en) | 2003-04-15 | 2003-11-26 | Methods of making multi-layer light emitting devices |
| US10/724,004 | 2003-11-26 | ||
| US10/724,005 | 2003-11-26 | ||
| US10/724,015 US7521854B2 (en) | 2003-04-15 | 2003-11-26 | Patterned light emitting devices and extraction efficiencies related to the same |
| US10/724,015 | 2003-11-26 | ||
| US10/724,029 US7098589B2 (en) | 2003-04-15 | 2003-11-26 | Light emitting devices with high light collimation |
| US10/724,033 | 2003-11-26 | ||
| US10/724,004 US6831302B2 (en) | 2003-04-15 | 2003-11-26 | Light emitting devices with improved extraction efficiency |
| US10/724,033 US7262550B2 (en) | 2003-04-15 | 2003-11-26 | Light emitting diode utilizing a physical pattern |
| US10/735,498 US7166871B2 (en) | 2003-04-15 | 2003-12-12 | Light emitting systems |
| US10/735,498 | 2003-12-12 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057019315A Division KR100955245B1 (ko) | 2003-04-15 | 2004-04-06 | 발광 시스템 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100009604A true KR20100009604A (ko) | 2010-01-27 |
Family
ID=33520090
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097027116A Ceased KR20100009604A (ko) | 2003-04-15 | 2004-04-06 | 발광 시스템 |
| KR1020057019315A Expired - Fee Related KR100955245B1 (ko) | 2003-04-15 | 2004-04-06 | 발광 시스템 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057019315A Expired - Fee Related KR100955245B1 (ko) | 2003-04-15 | 2004-04-06 | 발광 시스템 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7166871B2 (enExample) |
| EP (1) | EP1614123A4 (enExample) |
| JP (2) | JP2006523956A (enExample) |
| KR (2) | KR20100009604A (enExample) |
| WO (1) | WO2004093134A2 (enExample) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831302B2 (en) * | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
| US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
| US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
| US7105861B2 (en) * | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
| US7074631B2 (en) * | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
| US7667238B2 (en) * | 2003-04-15 | 2010-02-23 | Luminus Devices, Inc. | Light emitting devices for liquid crystal displays |
| US7211831B2 (en) * | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
| US7274043B2 (en) * | 2003-04-15 | 2007-09-25 | Luminus Devices, Inc. | Light emitting diode systems |
| US20040259279A1 (en) * | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
| US7262550B2 (en) * | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
| US7521854B2 (en) * | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
| US7084434B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Uniform color phosphor-coated light-emitting diode |
| EP1658642B1 (en) * | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US7344903B2 (en) * | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
| US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
| US7450311B2 (en) * | 2003-12-12 | 2008-11-11 | Luminus Devices, Inc. | Optical display systems and methods |
| US7397067B2 (en) | 2003-12-31 | 2008-07-08 | Intel Corporation | Microdisplay packaging system |
| US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
| TWI319914B (en) * | 2004-04-02 | 2010-01-21 | Led and backlight system adapting the led | |
| US7345298B2 (en) * | 2005-02-28 | 2008-03-18 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
| US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
| US20090023239A1 (en) * | 2004-07-22 | 2009-01-22 | Luminus Devices, Inc. | Light emitting device processes |
| US7442964B2 (en) * | 2004-08-04 | 2008-10-28 | Philips Lumileds Lighting Company, Llc | Photonic crystal light emitting device with multiple lattices |
| US20060038188A1 (en) | 2004-08-20 | 2006-02-23 | Erchak Alexei A | Light emitting diode systems |
| US20060043400A1 (en) * | 2004-08-31 | 2006-03-02 | Erchak Alexei A | Polarized light emitting device |
| US7352006B2 (en) * | 2004-09-28 | 2008-04-01 | Goldeneye, Inc. | Light emitting diodes exhibiting both high reflectivity and high light extraction |
| WO2006042050A2 (en) * | 2004-10-08 | 2006-04-20 | B/E Aerospace, Inc. | Dimmable reading light with emergency lighting capability |
| US7692207B2 (en) * | 2005-01-21 | 2010-04-06 | Luminus Devices, Inc. | Packaging designs for LEDs |
| US7170100B2 (en) | 2005-01-21 | 2007-01-30 | Luminus Devices, Inc. | Packaging designs for LEDs |
| US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
| US20070045640A1 (en) | 2005-08-23 | 2007-03-01 | Erchak Alexei A | Light emitting devices for liquid crystal displays |
| US8163575B2 (en) | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
| US20080099777A1 (en) * | 2005-10-19 | 2008-05-01 | Luminus Devices, Inc. | Light-emitting devices and related systems |
| US20080025037A1 (en) * | 2006-07-28 | 2008-01-31 | Visteon Global Technologies, Inc. | LED headlamp |
| US8362603B2 (en) * | 2006-09-14 | 2013-01-29 | Luminus Devices, Inc. | Flexible circuit light-emitting structures |
| US8110838B2 (en) * | 2006-12-08 | 2012-02-07 | Luminus Devices, Inc. | Spatial localization of light-generating portions in LEDs |
| US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
| WO2009075753A2 (en) * | 2007-12-06 | 2009-06-18 | Paul Panaccione | Chip-scale packaged light-emitting devices |
| US20100038670A1 (en) * | 2008-08-18 | 2010-02-18 | Luminus Devices, Inc. | Illumination assembly including chip-scale packaged light-emitting device |
| CN102265401B (zh) * | 2008-09-24 | 2016-11-09 | 发光装置公司 | 包括可独立电寻址区段的发光器件 |
| KR20110080165A (ko) * | 2008-10-17 | 2011-07-12 | 루미너스 디바이시즈, 아이엔씨. | 원격 조명 조립체 및 방법 |
| US8648932B2 (en) | 2009-08-13 | 2014-02-11 | Olive Medical Corporation | System, apparatus and methods for providing a single use imaging device for sterile environments |
| KR102136181B1 (ko) * | 2009-10-01 | 2020-07-22 | 루미너스 디바이시즈, 아이엔씨. | 발광 장치 |
| US20110121726A1 (en) * | 2009-11-23 | 2011-05-26 | Luminus Devices, Inc. | Solid-state lamp |
| US10290788B2 (en) * | 2009-11-24 | 2019-05-14 | Luminus Devices, Inc. | Systems and methods for managing heat from an LED |
| KR101855158B1 (ko) | 2010-03-25 | 2018-05-08 | 디퍼이 신테스 프로덕츠, 인코포레이티드 | 의료 애플리케이션을 위한 1회용 촬상 디바이스를 제공하는 시스템과 방법 |
| KR101039880B1 (ko) | 2010-04-28 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 패키지 |
| US8872217B2 (en) | 2011-04-15 | 2014-10-28 | Luminus Devices, Inc. | Electronic device contact structures |
| BR112013029014A2 (pt) | 2011-05-12 | 2020-05-12 | Olive Medical Corporation | Sistema e método de digitalizadores paralelos de subcolunas de sensor de imagens empilhadas utilizando interconexões verticais |
| TWI664752B (zh) | 2011-06-28 | 2019-07-01 | Luminus Devices, Inc. | 用於增強性能之發光二極體架構 |
| WO2013022129A1 (ko) * | 2011-08-09 | 2013-02-14 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
| JP5854383B2 (ja) * | 2012-01-31 | 2016-02-09 | 国立大学法人京都大学 | 2次元フォトニック結晶 |
| US9496458B2 (en) | 2012-06-08 | 2016-11-15 | Cree, Inc. | Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same |
| WO2014018948A2 (en) | 2012-07-26 | 2014-01-30 | Olive Medical Corporation | Camera system with minimal area monolithic cmos image sensor |
| CN105228503B (zh) | 2013-03-15 | 2017-11-07 | 德普伊新特斯产品公司 | 最小化内窥镜应用中图像传感器输入/输出和导体的数量 |
| JP6433975B2 (ja) | 2013-03-15 | 2018-12-05 | デピュイ・シンセス・プロダクツ・インコーポレイテッド | 入力クロック及びデータ伝送クロックのない画像センサ同期 |
| JP6493773B2 (ja) * | 2015-08-31 | 2019-04-03 | パナソニックIpマネジメント株式会社 | 発光装置 |
| CN108968976B (zh) | 2017-05-31 | 2022-09-13 | 心脏起搏器股份公司 | 具有化学传感器的植入式医疗设备 |
| US12004853B2 (en) | 2017-07-26 | 2024-06-11 | Cardiac Pacemakers, Inc. | Systems and methods for disambiguation of posture |
| CN109381195B (zh) | 2017-08-10 | 2023-01-10 | 心脏起搏器股份公司 | 包括电解质传感器融合的系统和方法 |
| CN109419515B (zh) | 2017-08-23 | 2023-03-24 | 心脏起搏器股份公司 | 具有分级激活的可植入化学传感器 |
| CN109864746B (zh) | 2017-12-01 | 2023-09-29 | 心脏起搏器股份公司 | 用于医学装置的多模式分析物传感器 |
| CN109864747B (zh) | 2017-12-05 | 2023-08-25 | 心脏起搏器股份公司 | 多模式分析物传感器光电子接口 |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3293513A (en) | 1962-08-08 | 1966-12-20 | Texas Instruments Inc | Semiconductor radiant diode |
| US3922706A (en) | 1965-07-31 | 1975-11-25 | Telefunken Patent | Transistor having emitter with high circumference-surface area ratio |
| US4864370A (en) | 1987-11-16 | 1989-09-05 | Motorola, Inc. | Electrical contact for an LED |
| US5126231A (en) | 1990-02-26 | 1992-06-30 | Applied Materials, Inc. | Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch |
| JPH0442582A (ja) | 1990-06-08 | 1992-02-13 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
| US5073041A (en) | 1990-11-13 | 1991-12-17 | Bell Communications Research, Inc. | Integrated assembly comprising vertical cavity surface-emitting laser array with Fresnel microlenses |
| JPH04264781A (ja) | 1991-02-20 | 1992-09-21 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
| US5359345A (en) | 1992-08-05 | 1994-10-25 | Cree Research, Inc. | Shuttered and cycled light emitting diode display and method of producing the same |
| US5724062A (en) | 1992-08-05 | 1998-03-03 | Cree Research, Inc. | High resolution, high brightness light emitting diode display and method and producing the same |
| US5363009A (en) | 1992-08-10 | 1994-11-08 | Mark Monto | Incandescent light with parallel grooves encompassing a bulbous portion |
| EP0621936A4 (en) * | 1992-09-09 | 1996-01-10 | Massachusetts Inst Technology | Replicated-in-place internal viscous shear damper for machine structures and components. |
| DE69405427T2 (de) | 1993-03-04 | 1998-04-02 | At & T Corp | Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser |
| TW253999B (enExample) | 1993-06-30 | 1995-08-11 | Hitachi Cable | |
| US5600483A (en) | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
| US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| US5633527A (en) | 1995-02-06 | 1997-05-27 | Sandia Corporation | Unitary lens semiconductor device |
| US5814839A (en) | 1995-02-16 | 1998-09-29 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same |
| DE19629920B4 (de) | 1995-08-10 | 2006-02-02 | LumiLeds Lighting, U.S., LLC, San Jose | Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor |
| US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| WO1998013709A1 (en) | 1996-09-24 | 1998-04-02 | Seiko Epson Corporation | Illuminating device and display using the device |
| DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
| US5834331A (en) | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
| US5955749A (en) | 1996-12-02 | 1999-09-21 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
| FR2758890B1 (fr) | 1997-01-29 | 1999-02-26 | Thomson Multimedia Sa | Dispositif optique de polarisation |
| US6388264B1 (en) | 1997-03-28 | 2002-05-14 | Benedict G Pace | Optocoupler package being hermetically sealed |
| GB9710062D0 (en) | 1997-05-16 | 1997-07-09 | British Tech Group | Optical devices and methods of fabrication thereof |
| US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
| US6690268B2 (en) | 2000-03-02 | 2004-02-10 | Donnelly Corporation | Video mirror systems incorporating an accessory module |
| US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US6265820B1 (en) | 1998-01-29 | 2001-07-24 | Emagin Corporation | Heat removal system for use in organic light emitting diode displays having high brightness |
| US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| JPH11251629A (ja) * | 1998-02-27 | 1999-09-17 | Daido Steel Co Ltd | 半導体発光素子の製造方法 |
| US6504180B1 (en) | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| JP5019664B2 (ja) * | 1998-07-28 | 2012-09-05 | アイメック | 高効率で光を発するデバイスおよびそのようなデバイスの製造方法 |
| US6291085B1 (en) * | 1998-08-03 | 2001-09-18 | The Curators Of The University Of Missouri | Zinc oxide films containing P-type dopant and process for preparing same |
| US6335548B1 (en) | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
| US6169294B1 (en) | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
| JP3525061B2 (ja) | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
| US6307218B1 (en) | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| US6222207B1 (en) | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
| TW437104B (en) | 1999-05-25 | 2001-05-28 | Wang Tien Yang | Semiconductor light-emitting device and method for manufacturing the same |
| US6122103A (en) | 1999-06-22 | 2000-09-19 | Moxtech | Broadband wire grid polarizer for the visible spectrum |
| US6288840B1 (en) | 1999-06-22 | 2001-09-11 | Moxtek | Imbedded wire grid polarizer for the visible spectrum |
| US6803603B1 (en) | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
| US6534798B1 (en) | 1999-09-08 | 2003-03-18 | California Institute Of Technology | Surface plasmon enhanced light emitting diode and method of operation for the same |
| US6287882B1 (en) | 1999-10-04 | 2001-09-11 | Visual Photonics Epitaxy Co., Ltd. | Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same |
| US6614056B1 (en) | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| KR100700993B1 (ko) | 1999-12-03 | 2007-03-30 | 크리, 인코포레이티드 | 향상된 광 적출 구조체를 갖는 발광 다이오드 및 그 제조 방법 |
| US6410942B1 (en) | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
| US6573537B1 (en) | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
| US6277665B1 (en) | 2000-01-10 | 2001-08-21 | United Epitaxy Company, Ltd. | Fabrication process of semiconductor light-emitting device with enhanced external quantum efficiency |
| JP4643794B2 (ja) | 2000-04-21 | 2011-03-02 | 富士通株式会社 | 半導体発光素子 |
| US6853663B2 (en) | 2000-06-02 | 2005-02-08 | Agilent Technologies, Inc. | Efficiency GaN-based light emitting devices |
| JP4024994B2 (ja) | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
| US20020085390A1 (en) * | 2000-07-14 | 2002-07-04 | Hironobu Kiyomoto | Optical device and apparatus employing the same |
| TW456058B (en) | 2000-08-10 | 2001-09-21 | United Epitaxy Co Ltd | Light emitting diode and the manufacturing method thereof |
| US6998281B2 (en) * | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
| TW579608B (en) | 2000-11-24 | 2004-03-11 | High Link Technology Corp | Method and structure of forming electrode for light emitting device |
| JP5110744B2 (ja) | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 発光装置及びその製造方法 |
| US6703780B2 (en) | 2001-01-16 | 2004-03-09 | General Electric Company | Organic electroluminescent device with a ceramic output coupler and method of making the same |
| US6794684B2 (en) | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
| US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| AU2002303112A1 (en) | 2001-03-06 | 2002-09-19 | Michael G. Brown | Led lead for improved light extraction |
| US6522063B2 (en) | 2001-03-28 | 2003-02-18 | Epitech Corporation | Light emitting diode |
| FR2824228B1 (fr) * | 2001-04-26 | 2003-08-01 | Centre Nat Rech Scient | Dispositif electroluminescent a extracteur de lumiere |
| US6574383B1 (en) | 2001-04-30 | 2003-06-03 | Massachusetts Institute Of Technology | Input light coupler using a pattern of dielectric contrast distributed in at least two dimensions |
| US6709929B2 (en) | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
| US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
| DE10147887C2 (de) | 2001-09-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt |
| DE10158754A1 (de) | 2001-11-30 | 2003-06-18 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiderbauelement |
| US7279718B2 (en) | 2002-01-28 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | LED including photonic crystal structure |
| ATE445233T1 (de) | 2002-01-28 | 2009-10-15 | Nichia Corp | Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung |
| US6869820B2 (en) | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
| US6849558B2 (en) | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
| US20030222263A1 (en) | 2002-06-04 | 2003-12-04 | Kopin Corporation | High-efficiency light-emitting diodes |
| US6649437B1 (en) | 2002-08-20 | 2003-11-18 | United Epitaxy Company, Ltd. | Method of manufacturing high-power light emitting diodes |
| TW541732B (en) | 2002-08-28 | 2003-07-11 | Arima Optoelectronics Corp | Manufacturing method of LED having transparent substrate |
| US6762069B2 (en) | 2002-11-19 | 2004-07-13 | United Epitaxy Company, Ltd. | Method for manufacturing light-emitting element on non-transparent substrate |
| US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
| US7141828B2 (en) | 2003-03-19 | 2006-11-28 | Gelcore, Llc | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact |
| US7274043B2 (en) | 2003-04-15 | 2007-09-25 | Luminus Devices, Inc. | Light emitting diode systems |
| US7521854B2 (en) | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
| US7098589B2 (en) | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
| US7262550B2 (en) | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
| US7083993B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
| US7074631B2 (en) | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
| US7084434B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Uniform color phosphor-coated light-emitting diode |
| US6831302B2 (en) * | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
| US7211831B2 (en) | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
| US20040259279A1 (en) | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
| US7105861B2 (en) | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
| TWI240434B (en) | 2003-06-24 | 2005-09-21 | Osram Opto Semiconductors Gmbh | Method to produce semiconductor-chips |
| US6847057B1 (en) | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
| US7341880B2 (en) | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
| US7344903B2 (en) | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
| US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
| US7450311B2 (en) | 2003-12-12 | 2008-11-11 | Luminus Devices, Inc. | Optical display systems and methods |
-
2003
- 2003-12-12 US US10/735,498 patent/US7166871B2/en not_active Expired - Lifetime
-
2004
- 2004-04-06 WO PCT/US2004/010671 patent/WO2004093134A2/en not_active Ceased
- 2004-04-06 KR KR1020097027116A patent/KR20100009604A/ko not_active Ceased
- 2004-04-06 JP JP2006509771A patent/JP2006523956A/ja active Pending
- 2004-04-06 KR KR1020057019315A patent/KR100955245B1/ko not_active Expired - Fee Related
- 2004-04-06 EP EP04759197A patent/EP1614123A4/en not_active Withdrawn
-
2007
- 2007-01-17 US US11/654,368 patent/US20070187703A1/en not_active Abandoned
-
2011
- 2011-05-24 JP JP2011116158A patent/JP2011187980A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1614123A2 (en) | 2006-01-11 |
| KR20050119691A (ko) | 2005-12-21 |
| JP2011187980A (ja) | 2011-09-22 |
| US20050087754A1 (en) | 2005-04-28 |
| JP2006523956A (ja) | 2006-10-19 |
| KR100955245B1 (ko) | 2010-04-29 |
| US20070187703A1 (en) | 2007-08-16 |
| WO2004093134A2 (en) | 2004-10-28 |
| EP1614123A4 (en) | 2010-12-08 |
| WO2004093134A3 (en) | 2005-06-02 |
| US7166871B2 (en) | 2007-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100955245B1 (ko) | 발광 시스템 | |
| KR100924959B1 (ko) | 발광 디바이스 | |
| KR100934381B1 (ko) | 발광 디바이스 | |
| KR100937148B1 (ko) | 발광 디바이스 | |
| KR100892957B1 (ko) | 발광 디바이스 | |
| TWI404225B (zh) | 發光方法(二) | |
| US7521273B2 (en) | Light emitting device methods | |
| US7341880B2 (en) | Light emitting device processes | |
| US7344903B2 (en) | Light emitting device processes | |
| US8217415B2 (en) | Electronic device contact structures | |
| US20060043400A1 (en) | Polarized light emitting device | |
| US20050127375A1 (en) | Optical display systems and methods | |
| US20070045640A1 (en) | Light emitting devices for liquid crystal displays | |
| WO2005059959A2 (en) | Light emitting diode systems | |
| US20090023239A1 (en) | Light emitting device processes | |
| CN1774811B (zh) | 发光系统 | |
| WO2006096794A2 (en) | System having aperture-matched optical component and light emitting device | |
| CN101908589A (zh) | 发光系统 | |
| WO2005060586A2 (en) | Electronic device contact structures | |
| TW200428682A (en) | Light emitting systems |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20091224 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20100120 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20100407 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20101011 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20100407 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 20110110 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20101011 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20110622 Appeal identifier: 2011101000171 Request date: 20110110 |
|
| J801 | Dismissal of trial |
Free format text: REJECTION OF TRIAL FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20110110 Effective date: 20110622 |
|
| PJ0801 | Rejection of trial |
Patent event date: 20110622 Patent event code: PJ08011S01D Comment text: Decision on Dismissal of Request for Trial (Dismissal of Decision) Decision date: 20110622 Appeal kind category: Appeal against decision to decline refusal Appeal identifier: 2011101000171 Request date: 20110110 |