TW200428682A - Light emitting systems - Google Patents

Abstract

Light-emitting systems, and related components, systems and methods are disclosed.

Description

200428682 V. Description of the invention (2) [Technical field to which the invention belongs] The present invention relates to a lighting system and its related components, systems and methods. 7 [Prior art] Compared to incandescent lamps or incandesCent light sounes and / or fluorescent light sources, the light provided by light emitting diodes (LEDs) can be High efficiency. In addition, as the related equipment of LEDs can provide considerable power efficiency, traditional light sources have been replaced in various lighting facilities. For example, · L E D s is used as a traffic light (t r a f f c 1 i g h t s), used to illuminate cell phone keypads and displays. In general, LEDs are formed by multiple layer structures (muitip; [e layers) m, where at least part of the layer structure in the multiple layer structure is made of different materials, and the material of these layer structures The thickness determines the wavelength (wave 1 ength) of the light emitted by the LED. On the other hand, through the selection of the chemical composition of these layer structures, 'this system can perform quite effective energy contraction for its optical power, and for the emitted electrical charge carriers), so as to prevent them from entering certain regions (commonly known as qUantum wells). Usually, the junction at the location where the quantum well is generated

1057-6267-PF (N2) .ptd Page 6 200428682 V. Description of the invention (3) One of the layer structures on the side is doped with donor atoms (d 〇n 〇r atoms). The electron concentration (eiec ^ r0n concentration ^ is usually called the η-type layer structure (11-41) 6 layers)); in addition, the layer structure on the opposite side is doped with acceptor atoms (Acceptor atoms), so as to cause a relatively high hole concentration (commonly referred to as these p-type layers). The following description of the LED manufacturing method will be provided. A plurality of material layers are formed during the fabrication of the wafer. Generally speaking, these layer structure boxes are formed by the epitaxial deposition technique, such as metal-organic chemical vapor deposition (MOCVD) ^ on the growth substrate The substrate layer has been previously formed with a deposited layer structure. Subsequently, the etching and metallization techniques are used to make contact pads for current injection of these layer structures. Subsequently, the wafer can be diced to make individual LED chips. Usually, the individual LED chips after dicing are covered with packaging technology. When the LED is operated, the electrical energy (e 1 ectrica 1 energy) is injected into the LED, and this electrical energy can then be converted into electromagnetic radiation (light), and some of the electromagnetic radiation or light can be led out through the LED. [Summary of the Invention]

1057-6267-PF (N2) .ptd Page 7 200428682 V. Description of the Invention (4) In view of this, its related elements, systems and examples of the present invention are implemented in a light-emitting device. The light emitting device package generates a region and one, through the first layer, the light generated by one of the layers can have a dielectric line space modification on the surface of the first layer. The device emits a time-varying pattern; the pattern is generated by more than zero. In the embodiment, the light can be in another real light-emitting device, the light-emitting device light-generating area and the surface of the light generated through the first light-emitting device has a (nonperiodic light device The design is issued by the table of the first layer. In another real light-emitting device, a first layer-one of the layers can be subjected to a dielectric function pattern, and in a spontaneous embodiment, the purpose of the light-emitting device is to provide A light-emitting system and method. The light-emitting system of the invention is characterized in that it includes a layer of multiple layers of material, including a layer of light. The surface of one layer is emitted from the light-emitting device; the first function, the dielectric function is based on a pattern, and has an ideal lattice constant and a modulation table; and Under the function of the device design: light can be emitted spontaneously through the surface of the first layer. The X-ray Maoming luminescence system is characterized in that it includes: a multiple layer of stacked material, including one, the first The layer is supported by the light-generating area, and the surface of the first layer of the light-generating area is emitted from the light-emitting device under the design of the surface. The dielectric function is spatially changed according to a non-periodic pattern; and 7 When the light generated by the light-generating area can be emitted by the magic light device, the light can be self-luminous. The light-emitting system of the present invention is characterized in that it includes: a multiple layer of stacked material, including a

1057-6267-PF (N2) .ptd Page 8 200428682 V. Description of the invention (5) Light-generating area and a first layer, the first layer is supported by the light-generating area, and it passes through a surface of the first layer Under the design, the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer. The surface has a dielectric function, and the dielectric function is based on a complex periodic pattern. And make spatial changes. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. In yet another embodiment of the light-emitting device, the light-emitting n-doped material layer and a p-emission material layer can reflect at least the material on the transmitted material layer, and the number of light emitted from the light-emitting device produced by the light-generating region is described by In another embodiment of the light-emitting device, the light-emitting device is generated from the light-generating region between the electric function system root material layer and the reflective material emitting material layer. The light-emitting light-generating region and a τ device include a doped material layer. The invention of the luminescence system is characterized in that it includes multiple layers of material, including a light-generating area; and a light system that is generated by the light-generating area and hits about 50% of the reflection is reflected by the reflective material layer, Under the design of one surface of the η-doped material layer: the generated light can pass through the surface of the η-doped material layer; the surface of the η-doped material layer has a dielectric function and a pattern to make spatial changes; The distance between the ρ-doped layers is smaller than the η-doped material layer and back-separation; and under the design of the light-emitting device, when the light can pass through the surface of the η-doped material layer, the light can Light emitting system. ^ The light-emitting system of the present invention is characterized in that it includes a shizhi bag: a multiple layer of stacked material, including a first layer supported by a light-generating area,

1057-6267-PF (N2) .ptd Page 9 200428682 V. Description of the invention (6) The light generated by the design of one surface of the first layer can pass through the first home's surface generated by the light generating area. A dielectric function: dielectric lightning == emitted from the light-emitting device, and changes on the table; and a reflection ★ rough = 空间 spatially generated according to a pattern, and impacted on a reflective material ^: produced by the light-generating area Between the reflective material layer and the first layer. * 发; 晋 ϊί Department of the light generated when the light-generating area ## can be placed under the influence of the umbrella, the umbrella-like shape to be a mountain ϊ ^ first line can be spontaneous first through the surface of the first layer The clothing set emits%, and the light can be emitted from the lighting system. In the embodiment of the present invention, the light-emitting device of the present invention is characterized in that the light-emitting device includes: a multiple layer of stacked material, including a light-generating area and a first layer. The first layer is supported by the light-generating area through the first layer. Under the design of one surface of the layer, the light produced by the light-generating area can be emitted from the light-emitting device through the surface of the first layer; and a material (material) that contacts the surface of the first layer. The refractive index ^ is less than 1.5, in which the light-emitting device is covered by a packaging method / and under the design of the light-emitting device, when n ′ light generated in the light-generating area can pass through the surface of the first layer, When the light emitting device emits light, light can be emitted from the light emitting system. In another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes: a multiple layer of stacked material, '/ package = a light generating area and a first layer' It is supported by the light-generating area through the design of one surface of the first layer, and the light generated by the light-generating soil can pass through the surface of the first layer to emit light from the light-emitting device φ,, ^ Pri m, Asia And table

1057-6267-PF (N2) .p ^ ^ Page 10 " ----- 200428682 V. Description of the invention (7) The surface has a dielectric function |. The function is supported by the surface of the space layer according to a pattern. The material (Phospohr material) is formed by the first side of the side wall (sid⑼al 1) without solid silicon light emitting device. And when you send Mengjinzhi · Gu 4 *, the light generated in the § light-generating area will be ^ self-luminous, when the light can be self-luminous: and; out of the table-the light is f, and the light is t The light-emitting system of the present invention is characterized in that it includes a light packet; two == ... includes-through the design of the surface of the first layer-the light from the light generating area can be emitted from the light-emitting device through the surface of the first layer The surface system has a dielectric function, and the dielectric function is spatially changed according to a pattern 'and a phosphorous material 彳 仙 ⑵ 仙 ^^^^ "^ Designed to make the light generated by the light-generating area It is emitted through the surface of the first layer and interacts with the phosphorous material, so that it is emitted through the phosphorous layer. The light is essentially white light, where the ratio between the light-emitting device = ^ and its area is small enough to allow white light to extend in any direction ^, where the height of the light-emitting device is between its area and its area The ratio (rati 〇) is small enough to allow white light to extend in any direction, and under the design of the light emitting device, when the light generated from the light generating area can be emitted from the light emitting device through the surface of the first layer, Light can be emitted from the lighting system. In yet another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes: a multiple layer of stacked material, including

200428682 V. Description of the invention (8) The light-generating area and a first layer. The first layer is supported by the light-generating area, and the light generated by the light-generating area can be passed through the design of one surface of the first layer. Emitted from the light-emitting device through the surface of the first layer; a first sheet including a material, the material of the first sheet is substantially transparent and allows light to be emitted from the light-emitting device; and a second sheet including a Phosphorous material, the second sheet is adjacent to the first sheet, and the light-emitting device is covered by a packaging method. The first sheet and the second sheet together form a part of a package for covering the light-emitting device. And, under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. The sign is that it includes multiple layers of stacked material, including a series supported by the light generating area, and under the action of the light generating area, it is emitted from the light-emitting device; the dielectric function is based on the design of a pattern through the design The Plasma distribution emitted from the light emitting device by the surface of light is relatively parallel. When the light generated in the green area can be emitted, the light can be self-emissive. In another embodiment, the present invention emits a light-emitting device. The light-emitting device includes a light-generating area and a first layer. The light generated through the design of a surface of the first layer can be spatially changed through the surface of the first layer of the first layer having a dielectric function (pattern): generated by the production area and passed through the first The light distribution of the layered light is compared with the design of the light-emitting device, when the light is emitted from the light-emitting device through the surface of the first layer. In another embodiment, the lighting system of the present invention is characterized in that it includes

in ^ 7_ ^ 9 ^ 7-PF (N2) .Dtd Page 12 200428682

V. Description of the invention (9) A light-emitting device The light-emitting device includes: 'a multi-layered material layer, a light-generating area, and a first layer. During the use of the light-emitting device, the light can be carried by the light source, and the wire can pass through the surface of the first layer, and the surface of the light layer on which the light-emitting skirt is placed has a dielectric function. The dielectric function is rooted. ^: The change in the first space 'Asia and the total amount generated in the light generation area: at least about 45% is due to the design of the light through the surface of the light emitting device, when light is generated The X ° produced in the area is emitted from the light emitting device when the light emitting device ^. Soil '^ can be bound to the surface of the first layer of t ± 7 without green. In one embodiment, the light emitting system of the present invention is characterized by a pot-shaped light-emitting device. The light-emitting device includes a plurality of layers of stacked materials. The area is supported by a first layer and a second layer of two light generating areas. The first layer includes a surface, and the light produced by the light generating region can be emitted from the light emitting device through the surface of the first layer. The light-emitting device has an edge, and the length of this edge can be at least 1 mm (111111) (111 丨 111111641 >) (for example: at least about 15 mm, at least about 2 mm, at least about 2 mm) · 5 mm); In addition, under the proper design, the efficiency of extracting the bow | extraction efficiency (extractioI1 efficiency) is essentially independent of the length of the edge. Under the design of the light-emitting device, when the light generated from the light-generating area can be emitted from the light-emitting device through the surface of the first layer, the light can be emitted from the light-emitting system. In another embodiment, the light-emitting system of the present invention is characterized in that it includes a hair-coating device, and the light-emitting device includes a multiple layer of stacked material, wherein

1057-6267-PF (N2) .ptd Page 13 200428682 V. Description of the invention (ί) The layer of re-pushing material includes a light generating area and a first layer, and the first layer is supported by the light generating area. The first layer includes a surface, and the light generated by the light generating region can be emitted from the light emitting device through the surface of the first layer. The light emitting device has an edge, and the length of this edge may be at least about 1 mm (for example, at least about 1.5 mm, at least about 2 mm, at least about 2.5 mm); Under the design, the wall plug efficiency of the light-emitting device is substantially independent of the length of the edge. In yet another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes a multiple layer of push-up material, wherein the multiple layer of push-up material includes a light generating region and a first layer. The first layer is supported by the light generating area. The first layer includes a surface, and the light generated by the light generating region can be emitted from the light emitting device through the surface of the first layer. The light emitting device has an edge, and the length of this edge may be at least about 1 mm (for example: at least about 1.5 mm, at least about 2 mm, at least about 2.5 mm); in addition, where appropriate When a light emitting device is designed, its quantum efficiency is substantially independent of the length of the edges. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. In yet another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes a multiple layer of push-up material, wherein the multiple layer of push-up material includes a light generating region and a first layer. The first layer is supported by the light generating area. The first layer includes a surface, and the light generated by the light generating region can be emitted from the light emitting device through the surface of the first layer.

1057-6267-PF (N2) .ptd Page 14 200428682 V. Description of the invention (11) The light emitting device has an edge, and the length of this edge can be at least about 1 mm (for example, at least about 1.5 mm, at least about 2 min, at least about 2.5 mm); In addition, under proper design of the light-emitting device, its quantum efficiency is substantially independent of the length of the edge. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. The following is to show one or more features through the embodiments. The lighting system is composed of a projector (pr jects 〇rs), a portable electronic device (portable electronic dev devices), a computer monitor, a large area signage system, a vehicle lighting Systems (vehic 1 e 1 ightingsystems), general lighting systems (general lighting sysytems), high brightness lighting systems (high brightness lighting systems), camera flashes (camera flashes), medical devices (medical devices), communication systems (te 1 ecommun i ca ti ons systems), security sensing systems, integrated optoelectronic systems, military field communication systems, bio-sensing 丨 J systems ), Photodynamic therapy systems, night-vision goggles, solar powered transit lighting systems, emergency lighting systmes, airport runways Lighting system

1057-6267-PF (N2) .ptd Page 15 200428682 V. Description of the Invention (12) (airport runway 1 ighting systems), airline lighting systems (surgicai goggles), tooth-mounted light sources ( wearable light sources) and their plural assemblies. In a specific embodiment, the light-emitting system is a projector (pr 〇ject 〇r), (for example, $ ar projection projector (rearpr 〇) ec VII projector), a front projection type projector (chemical 〇1 ^ prOjection projector)). In some embodiments, the 'lighting system' is a vehicle lighting system. In the specific embodiment, the lighting system is a general lighting system. In some embodiments, the light-emitting system of the present invention is characterized in that it includes a light device and a light-emitting device including a multiple layer of push-on material, the multiple layer of push-on material including a light generating area and a first layer, The first layer is supported by the light-generating area. Therefore, during the use of the light-emitting device, the light generated by the light-generating area can be emitted from the light-emitting device through the surface of the first layer. The light-emitting device has an edge. The length of the edge is at least about 1 unit. Under the design of the light-emitting device, the extraction efficiency of one of the light-emitting devices is substantially independent of the length of the edge. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. In the embodiment, the light-emitting system includes a plurality of light-emitting devices, and these i ΐ ΐί are arranged in an array (array) type 1 light system, and the system includes a plurality of arrays composed of; In a specific embodiment, the lighting system includes a shell having a surface

Page 16 200428682 V. Description of the invention (13) housing; the light-emitting device is arranged in the housing; and under the design of the light-emitting device, when the light generated in the light-generating area can pass through the first layer When the surface emits light from the light emitting device, light can be emitted from the light emitting system. In a specific embodiment, 'when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, before the light is emitted from the light emitting system, the light passes through at least one optical element (op tica 1 component) o In some embodiments, the 'light-emitting system includes a plurality of light-emitting devices, and at least a portion of the light-emitting devices in the light-emitting device have different peak emission wave lengths. The light emitting devices have substantially the same peak emission wavelength. Multiple push-over material layers include a light-generating area and a first layer. The first layer is supported by the light-generating area, and the light generated by the light-generating area is designed by a surface of the first layer. It can be emitted from the light-emitting device through the surface of the first layer; the surface system has a dielectric function, and the dielectric function is spatially changed according to a non-periodic pattern (nonperi 0 dicpa 11 er η); Under the design of the light-emitting device, when the light generated by the light-generating area can be emitted from the light-emitting garment through the surface of the first layer, the light can be emitted from the light-emitting system. A multi-material stack is made from a multi-layer stack of semiconductor material. The first layer can be one; n-doped semiconductor material layer (a iaye): 〇f

1057-6267-PF (N2) .ptd Page 17 200428682 V. Description of the invention (14) n-doped semi conductor material), and the multiple push-over material layer system may further include a P-doped semiconductor material layer (a 1 ayer 〇f p-doped semiconductor material). The light generating region may be located between the n-doped semiconductor material layer and the p-doped semiconductor material layer. The light emitting device may further include a support member (SUPPORT), thereby supporting multiple layers of stacked materials. The light-emitting device further includes a reflective material layer, and at least about 50% of the light generated in the light-generating area and impinging on the reflective material layer is reflected by the reflective material of the reflective material layer. The reflective material layer can be located between the gastric support member and the multiple push-up material layers. The distance between the p-doped material layer and the reflective material layer is the distance between the small doped material layer and the reflective material layer. The light-emitting device may further include a p-type ohmic contact, wherein the p-type ohmic contact is located between the p-doped material layer and the reflective material layer. The light-emitting device may further include a current-spreading layer, wherein the current-spreading layer is located between the first layer and the light generating region. The multi-material push-stacking system can be made of semiconductor materials, such as III-V semiconductor materials (III-V semiconductor materials), organic semiconductor materials (materials), and si (i i i c). to.卩 In discrete embodiments, the pattern does not need to be extended to the light generating area. In some embodiments

The pattern system does not need to extend above the first layer

Page 18 1057-6267-PF (N2) .ptd 200428682 V. Description of the invention (15) The light-emitting device may further include a plurality of electrical contact 塾 (electrical c ntactpad). The design of these electrical contact pads can be used to A current is injected into the light emitting device. The electrical contact pad system can be designed to inject current vertically into the light emitting device. The pattern system can be partially selected from the following various constitutions (c 0 m ρ ο nent) or a combination thereof, for example: a hole (h ο 1 es) is formed on the surface of the first layer, and the first layer Pillars are formed therein, and continuous veins are formed in the first layer. In some embodiments, the pattern is selected from the group consisting of a triangular pattern, a square pattern, and a grazing pattern. In some embodiments, the pattern pattern is selected from the group consisting of aperiodic patterns, quasicrystalline patterns, Robinson patterns, and Amman pat terns. In some embodiments, the pattern is a Penrose pat tern. In some embodiments, the pattern is selected from the group consisting of honeycomb patterns and Archimedean patterns. ). In certain embodiments, holes of different diameters may be formed on a pattern (for example, a honeycomb pattern). In some embodiments, the pattern may be formed by holes formed partially on the surface of the first layer. For example, the modulation parameter may be at least about 1% and / or 25% of the lattice constant. In some embodiments, the pattern may correspond to

1057-6267-PF (N2) .ptd Page 19 200428682 V. Description of the Invention (16) An ideal pattern for modulation. With proper design of the pattern, the spectrum of light emitted from the surface of the first layer, the spring system has a radiance mode (ii〇n 瓜 〇 心 s), and the spectrum of this radiation mode It is essentially the same as a characteristic emission of a light generating region (character istlc emiss i〇n spectrum). For example, the light emitting device may be a light emitting diode (light ennttmg dl0de), a laser (User) or a Opticai ampllflers. The light emitting device is composed of a plurality of organic Ught-emitting devices (OLEDs) and a plurality of surface emitting light emitting diodes (flat surface_emittlng LED light emitting diodes (HBLEDs). In some embodiments, the first The surface of the layer may have a characteristic 'wherein' is less than about λ / 5, where the wavelength is the wavelength of light that can be emitted by the first layer. In a specific embodiment, the light-emitting device is coated by means of sealing (for example, : Presented in the form of packaged die .: The packaged light-emitting device may not require the use of an encapsulation material; the layer (encapsu 1 ant material) is used in some embodiments, and the-layer A surface of the gas is connected to a gas (eg, air), and the force of the gas is slightly less than 100 Torr. 1 in a specific embodiment, the surface of the first layer The contact has a refractive index of at least about 1. ^

1057-6267-PF (N2) .ptd Page 20 200428682 V. Description of the Invention G7) In some embodiments, the packaged LED system includes a cover, and the cover includes a phosphor material. Under the proper design of the cover plate, the light generated by the light-generating area can be emitted through the surface of the first layer and can interact with the phosphorous material, and can be emitted through the surface of the first layer and with the phosphorous material Under the interaction, the light emitted by the cover is essentially white light. In a specific embodiment, the 'light-emitting bag set may further include a first sheet and a second sheet. The material of the first sheet is substantially transparent, thereby allowing light to be emitted from the light emitting device. A filler is included in the second sheet. The second sheet is adjacent to the first sheet, and a material having a refractive index of at least about 5 can be provided between the first sheet and the surface of the first layer. (Material). Under the design of the first sheet and the second sheet, the light generated by the light generating area can be emitted through the surface of the first layer and can interact with the wall material, and can be emitted through the surface of the first layer and can be Under the interaction with the phosphor material, the light emitted by the second sheet is essentially white light. The phosphor material may be disposed on the surface of the first layer. In some embodiments, when the light generated by the light-generating area is emitted from the light-emitting device through the surface of the first layer, at least 40% of the light emitted by the surface of the first layer is the parent of the first layer. Surface, and the angle is up to about 30 °. In a specific embodiment, the fill factor (f i 1 1 i ng f a c t or r) of the light emitting device is at least about 10% and / or at most about 75%. The following is to show one or more features through the embodiments.

1057-6267-PF (N2) .ptd Page 21 200428682 V. Description of the Invention (18) In a specific embodiment, an LED and / or a relatively large LED chip system can relatively emit light extraction. In some embodiments, an LED and / or a relatively large LED chip can relatively emit high surface brightness, average surface brightness, and low heat dissipation requirements or have high heat dissipation and low Ekndue and / or power efficiency. In a specific embodiment, an LED and / or a relatively large LED chip can be absorbed by the package with a relatively small amount of light emitted by the LED / LEI) chip under proper design. In some embodiments, a packaged LED (for example, a relatively large packaged LED) does not need to be packaged with a sealing material, so that the specific problems that may occur when using a specific sealing material can be avoided, such as ... Reduced performance and / or inconsistent performance on function of time. In a relatively long period of operation, one of the packaged LED systems provided thereby can achieve relatively ideal and / or reliable performance. In a specific embodiment, an LED (eg, a packaged LED, which may be a relatively large packaged LED) may include a uniform cold layer of phosphorous material. In some embodiments, one of the designed LEDs (for example: a packaged LED ’This packaged LED can provide the required light output within a specific angular range (par1: icular angular range) (desirecj Hh10

200428682 V. Description of the invention (19) A specific angle range). In some embodiments, an LED and / or a relatively large LED chip can be manufactured in a relatively inexpensive process. In a specific embodiment, an LED and / or a relatively large LED chip can be produced in a commercial scale (commercial sca 1 e) without increasing cost, and will not cause economical problems. Not feasible. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and the accompanying drawings are described in detail below. [Embodiment Mode] Figure 1 It is a schematic diagram showing a light emitting system 50. The light-emitting system 50 includes an array 60 ′ composed of a plurality of LEDs 100, and under the design of the array β 0, the array 60 during operation can make the LEDs 100 (see the following discussion) emit Light is emitted from the light emitting system 50 via the surface 55. For example, the lighting system includes a projector (pr 0 jec 70 0 rs) (for example, a rear projection projector, a front projection projector), a portable electronic device ( portable electronic devices) (eg: cell phone, personal digital assistants, laptop computers, computer monitor, iarge area

1057-6267-PF (N2) .ptd Page 23 200428682 V. Description of the invention (20) signage (for example: highway signage), vehicle interior lighting (v eh ic 1 einteri 〇r 1 i gh ti ng) (e.g., dashboard 1 i ght i ng), vehicle exterior lighting (e.g. vehicle headlights), including color changeable headlights , General lighting (for example: office overhead 1 ighting), high brightness lighting (for example: streetlights), camera flashes, medical devices (Eg: endoscopes), telecommunications (eg, plastic fibers for short range data transmission), securitysensing (eg, biometrics) Optics (biometrics), integrated optoelectronics (e.g., optical link between wafer and wafer) intrachipand interchip optical interconnects), optical clocking), military field communications (e.g., point to point communications), biosensory (j άά 口) : Photo-detection of organic or inorganic substance), photodynamic # (phot odynam ic therapy) (eg, skin treatment), night-vision goggles ), Solar powered transit lighting, emergency lighting

1057-6267-PF (N2) .ptd Page 24 200428682 V. What does the invention say (21) ''

UghUng systmes), airport runway lighting (airport rUnway ilghun £), airway lighting (airUne Ughting), surgical masks (surgical goggles), wearable Hght sourcesX (eg life vests (llfeiests)). For example, the rear projection type I projector is a rear projection television (reaf pr0) ection television; the front projection type projector is used to display on a surface (for example, screen ) Or a wall (waU)) projector. In some embodiments, the laptop computer may include a front-projection projector. As a matter of fact, the surface 55 is made of at least about 50% (e.g., at least about 30%, at least about 40%, at least about 5%) capable of transmitting from the LEDs 100 and striking the watch 5 5 0%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) of light, for example: surface 55 series T is made of glass ( glass), silicon (silica), quartz (quartz), plastic (plastic) and polymers (plommers) and other materials. In some embodiments, it is essentially desired to be generated by each LED 100 (for example: total light intensity, total light intensity as a function of wavelength, and / or peak emissi wavelength) The light of η wavel emgth is the same, for example: in a display app 1 i ca ti on s ({List as: used to achieve a vibrant full-color display) ) Is a monoclir omat ic sources (such as · LEDs) tiine- * sequencing. As for the optical system in communication, it runs to the light guide (1 i gh t gu i de), run to detection via light guide

1057-6267-PF (N2l) .jptd Page 25 200428682 V. Description of the invention (22) ^ (detector) has a specific wavelength (particu; [ar w a v e 1 e n g ΐ h) is its advantage. In the case of optical systems in vehicle lighting, signals are represented by colors. Another example is in medical facilities (medica 1 app 1 icati〇ns) (for example, light sensing drug activation (biosensitive drug activation) or biosensing applications), its wavelength, color The reaction system is an advantage). In some embodiments, it is desirable that the light emitted by at least a part of the LED 100 (eg, total light density (70ta 1 1 igh ΐ intensity), light density with a wavelength as a function, and / Or peak emission wavelength) is different from the light emitted by other LEDs 100 (for example: total light intensity, total light intensity as a function of wavelength, and / or peak emission wavelength )) 〇 Take general illumination (general 1 i gh ti ng) (for example, its multi-wavelength system can increase the color rendering index (CRI) (co1 or rendering index, CRI)) as your child, CRI4 series means: the same object And under the observation of reference lighting systems (e.g., daylight) of comparab 1 e correlated temperature, the color of these objects when they pass under the light emitted by the lighting system Partial (co 1 or sh ift) measurement. Other examples are: camera flash (for example: it is essentially a South CRI, and is essentially a CRI close to noon daylight (sunlight), and it is hoped that the object or subject it is photographing can have a true color display ( realistic rendering)), medical devices

1057-6267-PF (N2) .ptd Page 26 200428682 V. Description of the invention (23) (for example, in essence it has a fixed CR I and is beneficial to tissues, organs, body fluids ( nuid) and / or differentiation and / or identification), back-lit display (back 1 i ght i ng di sp 1 ay s) (eg, white light of specific CR I (wh ite 1 i gh t) is suitable for human eye). Although the LEDs 100 in the first figure are formed in an array manner, the LEDs 100 can also take other different forms. In some embodiments, the light emitting system 50 includes a single L E D 100. In other specific embodiments, the curved array system can be used to guide the light rays of various light sources to the same point position (for example, lenses such as lenses). . In addition, in some embodiments, the array-shaped light-emitting devices are arranged in a hexagonal shape, so that a compact package and high-performance surface brightness can be achieved. In some embodiments, the light emitting device is distributed along a mirror (eg, a dichromatic mirror), and the mirror system can emit light to the iLEDs in the array. The light is combined or reflected. As shown in Figure 1, the light emitted by the LEDs 100 travels directly onto the surface 55. However, in some embodiments, the light emitted by iLEDs 1000 can be transmitted to the surface 55 in an indirect manner. In some embodiments, the light emitting system 50 includes a single l E D 100. In addition, in a specific embodiment, the light emitted by the LEDs 100 is focused on a mirco display (eg, focused on a light valve, such as a digital light processor (DLP)) Above.

〇57-6267-PF (N2) .ptd Page 27 200428682 V. Description of the invention (24) In some embodiments, the light is guided through various lenses, mirrors or polarized light (p 1 〇arizers) ( For example: for LCD). In a particular embodiment, the light is projected through the primary and secondary lenses, such as a lens or lens group. FIG. 2 is a side view of a light emitting diode (LED) 100 in the form of a package die (p a c k a g e d d i e). The LED 100 includes a multi-layer stack 122. The multi-layer stack δ is placed on a submount 120 again. The multiple push stack 122 includes a silicon doped (n-doped) gallium nitride (n-doped) GaN layer 134, which has a thickness of 320 nm. An upper surface 110 of the n-doped gallium nitride layer 134 forms a pattern of a plurality of openings 150; a bonding layer 124; and a thickness of 10 〇nm one silver layer (siivei «iayer) i26; one thickness of 40 nm one magnesium-doped (p-doped) gallium nitride layer (p-doped) GaN layer 128; thickness 120 nm A light-generating region 130 is formed on the light-generating region 130 with multiple InGaN / GaN quantum wells; and an aluminum gallium nitride layer ( A1GaN layer) 132. An n-side contact pad (136) is disposed on the Shi Xijing doped (n-doped) gallium nitride layer (34), and a p-side contact pad (P-side contact pad) 138 is disposed on the silver layer 126. Encapsulant material layer (epoxy resin (e ρ 〇χ y) with a refractive index (index 〇frefrac ΐ i ο η) of 1 · 5) 1 4 4 is located in Shi Xijing doped (η- Doped) gallium nitride layer 134, a cover slip 14o and complex

200428682 V. Description of the invention (25) Between the number of supporting members (supp0fts) 142. The sealant material layer 144 does not extend into each of the openings 150. The following will describe the light (Hght) generated by the LED 100. Relative to the n-side contact pads 1 3 6 and the p-side contact pads 1 3 8 are at a positive potential, so that the electric current is input into the LED 100. When a current passes through the light generating region 130, the electrons emitted from the silicon-doped (η-doped) gallium nitride layer 314 and the nitride from the magnesium-doped (ρ-doped) nitride The holes of the gallium layer 128 are combined together on the light generating region 130, so that light can be generated in the light generating region 130. In addition, a large number of point dipole radiation sources (point dipole i ^ diation sources) are included in the light generating region 13. Under the action of the point dipole radiation sources, the light generated by the light generating region 130 (such as : Isotropic (is 〇tr 〇pica 1 1 y)) can have the characteristics of the spectrum of the light wavelength of the material made in the light generating area 130. Under the action of the InGaN / GaN quantum well, a peak waveiength of about 445 nanometers (namomewters (nm)) and a full width at half maximum of about 30 nm can be produced through the light generating region 130 half maximum) (FWHM). It is worth noting that compared to the charge carriers in the silicon-doped (n-doped) gallium nitride layer 134, the magnesium-doped (ρ-doped) gallium nitride layer 1 2 The 8 series has relatively low carrier mobility (m 0 bi 1 ity). In this way, by placing the silver layer 126 (which is conductive) along the surface of the magnesium-doped (p-doped) gallium nitride layer 1 2 8, the ρ edge contact pad

1057-6267-PF (N2) .ptd Page 29 200428682

The uniformity of the charge injection of the 138 to Mg-doped (P-doped) gallium nitride layer 128 and the light-generating region 130 can be effectively improved while reducing the LE D Electrical resistance of 100 and / or improvement of injection efficiency of LED 100. In addition, since the silicon doped (n-doped) atmosphere layer 134 has a carrier mobility (courier 'mobi 1 i ty) of the south, the electrons can pass the nitrogen from the n-side contact pad 136 quickly through nitrogen. The aluminum gallium layer 132 and the silicon-doped (n-doped) gallium nitride layer 134 can substantially make the current density at any position in the generation region 130 and through the generation region 30 ( current density) is in a uniform state. Furthermore, because the silver layer 126 has a relatively high thermal conductivity, the silver layer 126 can be used as a heat sink for the LED 100 (the heat is passed through multiple push-stacks 122, Passed to the carrier 120 in a vertical manner). At least a part of the light generated by the light generating region 130 may be directed onto the silver layer 126. Subsequently, the light reflected through the silver layer 26 can be emitted through the upper surface of the crystalline silicon doped (η-doped) gallium nitride layer 3 1 1 10 toward the outside of the LED 100, or the silver layer. The light reflected by 126 can be absorbed by the semiconductor material (semiconductor materiai) in LED 100 to become an electron-hole pair, and it is carried out in the hole-to-light-generating area 130. Under the combined effect, light can be generated in the light generating region 130. Similarly, the part of the light generated by the light generating region 13 can be guided to the n-side contact pad 136, and made of a material (eg, titanium ( Ti) /

Page 30 200428682 V. Description of the invention (27) Aluminum (A1) / nickel (Nl) / gold (Au)) reflects at least a part of the light generated by the light generating region 130. Therefore, the light system guided to the _contact 塾 136 can be reflected by the η-side contact pad 136, and the reflected light system can be passed through the upper surface of the silicon-doped (η-doped) gallium nitride layer 134. 110 (for example: reflected from the silver layer 126), emitted towards the outside of the LED 100, or guided to the n-side contact pad 136, and the light reflected by the n-side contact pad worker 36 can pass through the LED The semiconductor material in 1 0 0 absorbs to form a hole pair, and under the combined effect of the holes in the light generating area 3 0 ', light can be generated in the light generating area 1 3 0 (for example: borrow (With or without reflection by the silver layer 1 2 6). As shown in Figures 2 and 3, the surface 110 of the LED 100 is not flat, and a modified triangular pattern composed of a plurality of openings 150 is formed on the surface 110. Generally speaking, The depth of the slit 150 can be any value, and the diameter of the opening 150 and the nearest spacing of adjacent slits L150 can be arbitrarily changed. Unless it can be annotated in other ways, the following figures are clearly explained using the results of numerical calculations: the depth 146 of the opening 150 is about 280 nm; the non-zero diameter is about 160 nm; the closest interval between adjacent openings 150 is about 220 nm; and the refractive index is 1.0. Since the triangle pattern has undergone modulation processing, the size of the nearest center-to-center distance between the adjacent patterns of 150 is "(a- △ &) and a, which represent the lattice of the triangle pattern. The constant π △ aπ means between the scales (a + Aa) of different lengths, where (lattice constant) A \. T »M t | -μ 一-么 Jij · 1 ^ 1 令 日 古

1057-6267-PF (N2) .ptd Page 31 200428682 V. Explanation of the invention (28) (dimensions of iength) The modulation parameter (detuning parameter), where the modulation system can be based on any direction (random direction) ). In order to effectively increase the light extraction amount (1 1 ght extract i on) emitted by led 100 (see the following description), the modulation parameter △ a is at least 1% (〇ne percent) of the ideal lattice constant a. (For example: at least about 2%, at least about 3%, at least about 4%, at least about 5%), and / or at most about 25% of the ideal lattice constant (for example: at most 20%, at most 15%, up to 10%). In some embodiments, the nearest center distance between adjacent patterns 丨 5 〇 can be any value between (a-△ a) and (a + △ a). Perform arbitrary modulation. Based on the modified triangle pattern formed by the complex openings 150, it can be known that the non-zero modulation parameter system can improve the extraction efficiency of the LED 100. Please refer to Fig. 4. Based on the above description of the LED 100, it can be known that when the modulation parameter △ a increases from zero to about 0.15a, the mathematical model of the electromagnetic fields in the LED 100 The extraction efficiency of the light-emitting device shown in (numerical mode ling) (to be described later) is increased from 0.6 to 0.7. In Figure 4, the derived efficiency is estimated using the three-dimensional finite difference time domain (FDTD) method (three-d i mens i ona1 finite-difference time-domain (FDTD) method) to estimate the Maxwell's equations. The size of the internal light and external light of the LED 100 below. For example: K.S. Kunz and R.J. Luebbers, The Finite-Difference Time-Domain Methods (CRC, Boca Raton, FL, 1993), A. Taflove, Computational

1057-6267-PF (N2) .ptd Page 32 200428682 V. Description of Invention (29)

Electrodynamics: The Finite-Difference Time-Domain Method (Artech House, London, 1995) and the like have been incorporated by reference in the present invention. In order to show the optical behavior of the LED 100 with a specific pattern 150, the input parameters in the FDTD calculation include the center frequency and the point evenness in the light generating area 130. The bandwidth of the light emitted by the polar radiation source, the dimensions and dielectric properties of each layer structure in the multiple push stack 122, and the openings in the pattern 150 Diameter, depth, nearest neighbor distance (NND) (nearest neighbor distances (_)). In a specific embodiment, the extraction efficiency data used in the LED 100 is calculated using the FDTD method shown below. The FDTD method is used to solve the full-vector time-dependent Maxwell's equations. · V xE = -μ 'dR dty ^ π δΈ dP dt dt where' via polarizability (p. larizabiiity) household = household i + household 2 + ... + 4 is a quantum well region (qUantum wells region) that can capture light generation region 130, p-contact layer (126), others in LED 100 Frequency-dependent res ρ ο nse. 4 items are based on the different polarizability of materials

1057-6267-PF (N2) .ptd Page 33 200428682 V. Explanation of the invention (30) Values obtained by empirical derivation (emp iri ca 1 1 y) of different contributions (for example: used to restrain electronic vibration The polarization response of i (bound electron oscillations) is used for polarization response of free electron oscillations. In particular, dt2 dt, where the polar izat ion is equivalent to a dielectric constant Σ In order to facilitate numerical calculations, only the sealant material layer 144, the silver layer 126, and The layers of the sealant material layer 144 and the silver layer 126 are each structured. Since this estimation assumes that the sealant material layer 44 and the silver layer ^ M have sufficient thickness, the optical performance of the LED 100 will not be affected by surrounding iayers. In LED 100, the silver layer 126, the light generating region 13 and other related structures are assumed to have a frequency dependent dielectric constant, and other structures are not assumed to have a frequency dependent dielectric constant. constant. It is worth noting that, in some embodiments, the sealing material layer 1 44 and the silver layer 1 26 of the LED 100 include a plurality of additional metal layers, wherein each additional metal layer has Its corresponding dielectric constant according to frequency. It's also worth noting that the silver layer 1 2 6 (and any other of the LED 1 100)

1057-6267-PF (N2) .ptd Page 34 200428682 V. Description of the Invention (31) The metal layer) has a frequency-dependent term for both bound electrons and free electrons. (Frequency dependent term), but the light generating region 13 () has a frequency dependent term only for the bound electrons, but does not have a frequency dependent term for the free electrons. In other examples, when the frequency-dependent model calculation of the dielectric constant is performed, other such as electric phonon interactions (electrón-phQnQn) mteractwns, atomic polarization (at〇mic PolarizatiOns) ), Ionic polarization (10rnc polar lzatlons) and / or molecular polarizations (molecular polarizations) and other items can also be considered at the same time. By placing several in any position, fixed-current (constantly-placed, constant) -current) dipole sources are merged into the light-generating region 13, so that the model processing of the light emitted from the quantum well region of the light-generating region 130 can be completed. Each emitting short Gaussian pulses of spectrai width is equivalent to the emitting short Gaussian pulses of an actual quantum well, and each emitting short Gaussian pulse system has an arbitrary initial phase (rand 〇minit 丨 a 1 phase), start-time. In order to process the pattern formed by the openings 150 in the upper surface 110 of the LED 100 'in the lateral direction, A larger supercell (superce 1 1), and it uses periodic boundary conditions in the supercell at the same time. In the above way, in addition to assisting large (such as: edge (edge ) Is larger than OQi with)

1057-6267-PF (N2) .ptd Page 35 200428682 V. Description of the Invention (32) When the energy of the dipole sources is completely emitted and there is no energy in the system at all, the full calculus equation (ful 1 ev 〇lutic) nequati ο ns) can still complete related operations in time. During the simulation process, the emission of total energy, the energy flux drawn through the upper surface 110, and the energy absorbed by the quantum well and the η-doped layer are monitored. After the conversion of Fourier time and space, in addition to the frequency and angle resolved data that can be used to derive the energy flow, Tongri Temple can also derive the angle and frequency analysis. Efficiency (angle- and frequency-resolved extraction efficiency) is calculated. The total energy (tota 1 energy emitted) from the light-generating region 130 and the experimentally known luminescence of the light-generating region 130 are combined with each other, so that it can be obtained for a given Electrical input (givene 1 ectrica 1 input) unit brightness (lumen / per), solid angle / per chip area (absolute angle-resolved extraction) ° It can be sure that Under the effect of the detuned pattern 150, the extraction efficiency of the light generated by the light generating area 130 and emitted from the upper surface 1 1 0 of the LED 100 can be improved. The hole 1 50 can establish a dielectric function according to the pattern type, so that the dielectric function can be spatially performed in the Shi Xijing doped (η-doped) gallium nitride layer 134. change. Based on the above, the actual results are not the same as those based on the theory.

1057-6267-PF (N2) .ptd Page 36 200428682 V. Description of the invention (33) Distinguishing results. In addition, according to the results described above, the radiation mode (rad laU on modes) (that is, the light modes emitted by the upper surface 110), the guided modes (guided modes) (also That is, the density is limited to the light emission pattern in the multiple push stack 122. In addition, without the effect of the pattern 150, and through the above-mentioned change of the radiation mode and the guide mode, part of the light in the LED 100 is scattered (eg, Bragg scattered). Into the guidance mode, these scattering modes may also leak into the radiation mode. In a specific embodiment, the pattern 150 can eliminate all the guiding modes located in the LED 100. It is believed that the effect of detuning of the lattice (1 a 11 ice) can be achieved by Bragg scattering off of crystals having point scattering sites. Way to understand. In terms of perfect lattices in lattice planes spaced apart from each other by a distance d, monochromatic light with a wavelength of λ (monochromatic) is based on the Bragg condition n; l = 2dsin0, and the angle (an S 1 e Θ enters the scattering 'where' η represents the order of scattering 'is an integer). However, it has a spectral width △ and / For a light source that projects into ΔΘ at a three-dimensional angle, the Bragg condition can be changed by adjusting the spacing parameter of the lattice sites by a detuning parameter Aa. More loose. Therefore, the

l〇57-6267-PF (N2) .ptd Page 37 200428682 V. Description of the invention (34) Under the action of the emission source profile (spatia 1 emissi ο npr 〇fi 1 e), the modulation system of the lattice can be improved Pattern scatter effectiveness (angular acceptance). Based on the above description, in addition to having non-zero modulation parameters,

(non-zero detuning parameter) Z \ a's modified triangle pattern 150 is used to increase the amount of light emitted by LED 100, other patterns can also increase the amount of light emitted by LED 100. When deciding whether to use a given pattern to increase the amount of light emitted by the LED 100 and / or which aperture pattern can be used to increase the amount of light emitted by the LED 100, proceed Before the relevant numerical calculations, a basic pattern must be estimated in the form of physical insight. The basic pattern can be used to increase the amount of light emitted by the LED 100. In addition, because of the dielectric The system can be changed spatially according to the pattern 150. In this way, the extraction efficiency of the LED 100 can be understood by considering the Fourier transformation of the dielectric function. Fig. 5 shows a description of the Fourier transformation of an ideal triangular lattice. Along the plane

The extraction of light rays entering in a particular direction (part icular direct ion) of the in-plane wavevector k and entering all radiation modes along the in-plane wave vector k '(that is, parallel to the pattern 150) modes) of the source (emissioon) s have a mutual correlation 'wherein the in-plane wave vector k can be added or subtracted via the in-plane wave vector k' by adding an inverted lattice vector

200428682 V. Description of Invention (35)

(reciprocal lattice vector) G, that is, k = k, + Q The extraction efficiency is proportional to its relative dielectric function £ G Fourier component ^ (Fourier component) Fk, and its relationship is in addition, The light propagation system in the material layer can satisfy the equation k2 (in-piane) + k2 (normal (n〇rmai)) two ε (〇 / c) 2, which can be obtained under actual consideration. The maximum 1 ′ of the inverted lattice vector G is fixedly limited by the dielectric constant of the light (ω) emitted from the light-generating region 3 and the light-generating region 13. As shown in Figure 5, the ring type of the inverse =: reciprocal space is commonly referred to as the 1 ight line. Since the light generating region 13 has a finite bandwidth, the light energy level formed by it will be an annul us structure, and for the sake of explanation, a monochromatic light source (monochromatic light source) is used here. The light level of the source) is introduced. Similarly, the propagation of light in the sealant material layer is limited by the light energy level (within ft: 61 'Clrcle in Figure 5). Therefore, while increasing the Fourier fraction and Fk of the dielectric function Q, the extraction efficiency at the optical energy level in the sealant material layer and the direction of waves in each plane in the direction of $ k can be improved. Among them, The light energy level in the sealant 3 material layer is equal to the inverted lattice vector G point in the sealant material layer. For the inverted crystal port on the light energy level in the sealant material layer, °, ㉙: The scattering strength (dielectric function) is the sum of the increase in eG. When the selected pattern can improve the extraction efficiency, the physical image can be used for estimation. 200428682

200428682 V. Description of the invention (37) In certain embodiments, the filling factor of LED 100 is at least about 10% (for example, at least about 15%, at least about 20%) and / or at most about 90% (for example: at most about 80%, at most about 70%, at most about 60%). From the above-mentioned modified triangle pattern, we can know the correlation between the positioning system of the openings in the pattern and the modulation parameters above the positions of the ideal triangular lattice. In addition, the center of the pattern is maintained. At various positions of the ideal triangular pattern, this modified (detuned) triangular pattern can still be obtained by modifying the openings in the ideal triangular pattern. The example in Fig. 8 shows a modified (modulated) triangular pattern for this purpose. In this embodiment, the enhancement in the light extraction amount is used to perform relative numerical calculations ^ ^ / 'i: (methodology), and for the light emitting two with the pattern of FIG. 8 The physical explanation of the improved extraction efficiency in the polar body is the same as that described above. In a specific embodiment, the openings in the modified (adjusted) pattern can be inverted from a desired position (d i s p 1 a c e d), and the openings at the ideal position have a change in diameter. In other embodiments, different types of patterns are used to improve the light extraction of light-emitting diodes. These patterns include complex periodic patterns and nonperiodic patterns. . In the complex cycle ten patterns, each unit (u n i t c e 1 1) has more than one feature, and the single system has a periodic pattern (peri〇 (iic

1057-6267-PF (N2) .ptd page 41 200428682 V. Description of the invention (38) f a s h i ο η) is repeated. For example, complex periodic patterns include honeycomb patterns, honeycomb base patterns, 2x2 base patterns, ring patterns, and Archimedes. Archimedean patterns. In the following embodiments, part of the openings in the complex periodic pattern may have a single diameter, while other openings may have a smaller diameter. In addition, the aperiodic pattern is a pattern with no translational symmetry on the monomer, wherein the length of the monomer is at least 50 times the peak wavelength of the light generating region 130. For example, aperiodic patterns include aperiodic patterns, quasicrystalline patterns, Robinson patterns, and Amman patterns. Figure 9 shows that for LED 1 0 〇. Numerical calculation data of two different aperiodic patterns. Among them, part of the openings in the aperiodic pattern have a specific diameter, while other openings in the aperiodic pattern can be used. Has a smaller diameter. The numerical calculation data in Figure 9 shows the behavior of the openings with smaller diameters () and the extraction efficiency (larger openings with a diameter of 80 nm) when the diameter is changed from 0 nm to 95 nm. ). The calculation of the parameters used for LED 100 in Figure 2 has been obtained to obtain the data shown in Figure 7, but these parameters do not include the opening that changes according to the value of the fill factor on the X axis in the graph. Hole diameter. In order not to be limited by theory, the multi-periodality in the pattern can be allowed under the effect of the porous size (mul tip le ho 1 e s i z es).

1057-6267-PF (N2) .ptd Page 42 200428682 V. Description of the invention (39) (multiple periodicities) and scattering to increase the acceptance angle and spectral effectiveness of the pattern. In this embodiment, the increase in the light extraction amount, the method for calculating the relative value of the nose, and the physical explanation of the improved extraction efficiency in the light-emitting diode with the pattern of Figure 9 and so on In other words, they are the same as those described above. Figure 10 shows the numerical calculation data for the LED 100, which includes different ring patterns (complex periodic patterns). The number of openings of the first ring around the central hole is different from the number of openings of (6, 8 or 10) other different ring patterns. The data shown in Figure 10 were obtained by calculating the parameters used in LED 1 0 0 in Figure 2, but these parameters do not include the emitted light with a peak wavelength of 4 50 nm. . In Figure 10, the numerical calculation shows the extraction efficiency of LED 100 when the number of ring patterns per unit is from 2 to 4. Among them, the number of ring patterns passed the order in a repeated manner. body. In this embodiment, the physical explanation of the increase in the amount of light extraction, the method used to calculate the difference in relative values, and the extraction efficiency improved in the light-emitting diode with the pattern of Fig. 10, etc. In all respects, it is the same as above. The eleventh graph is a very different data with Archimedes pattern A7iLED 100. Archimedes pattern A7 is composed of hexagonal uint cel ls 23 with 7 equally-spaced holes at the same interval, and the distance between them is the nearest adjacent distance (NND ) a. In the hexagonal monomer 23, its 6 openings are hexagonal

Page 43 1057-6267-PF (N2) .ptd 200428682 V. Description of the invention (40) (regular hexagon) The shape is arranged, and the seventh opening is located at the center of the hexagon. Subsequently, these hexagonal monomers 2 3 0 together form a LED with a center-to-center spacing of a ′ = a * (l + 忑) and mating with each other along their edges. All pattern surfaces. This method is the familiar A7 map (A7 t i 1 i n g), which uses 7 openings to form a single body. Similarly, the Archimide anti-ing A1 9 is composed of 19 openings with the nearest adjacent distance (NND) a and the same interval, among which 6 openings are hexagonal (i nner hexagon). One or two openings are arranged in the form of an outer hexagon 歹 ij, and a central opening is set in the inner hexagon. Subsequently, these hexagonal monomers 2 3 0 together form all the pattern surfaces of the LED in a manner that the center-to-center spacing is a = a * (3 +) and cooperate with each other along their edges. In this embodiment, in terms of the increase in light extraction amount, a method for performing relative numerical calculations, and a physical explanation of the improved extraction efficiency in a light-emitting diode having the pattern of FIG. 11, etc. Are the same as above. In Figure 11, the extraction efficiency of the A7 and A19 textures is about 77%, and the data shown in Figure 2 are obtained by calculating the parameters used for LED 1 00 in Figure 2. These parameters do not include the emitted light with a peak wavelength of 450 nm, and these parameters do not include the individual cells that have holes defined by the nearest neighbor distance (NND). Fig. 12 shows numerical calculation data of the LED 100 having a quasicrystal pattern. For example, s, in M. Senechal, Quasicrystals and

1057-6267-PF (N2) .ptd Page 44 200428682 V. Description of Invention (41)

Geometry (Cambridge University Press, Cambridge, E n g 1 a n d 1 9 9 6) is a technology that discloses related quasicrystal patterns, which are also incorporated herein. Here is a numerical calculation to illustrate the performance of the extraction efficiency when the class of 8-fold based qusi-periodic structure is changed. It is certain that due to the quasicrystal pattern structure, due to high degree of in-plane rotational symmetries al lowed by such structure, the quasicrystal pattern can be rendered quite High extraction efficiency. In this embodiment, the increase in the amount of light extraction, the method for performing relative numerical calculations, and the physical explanation of the improved extraction efficiency in the light-emitting diode with the pattern of Figure 12 and so on In other words, they are the same as those described above. From the calculation data of the three-dimensional finite-density time-domain (FDTD) method shown in Figure 12, it can be seen that the extraction efficiency achieved by the quasicrystal pattern structure is about 82%. Based on the calculation of the number of LEDs used in the second figure, the data shown in the second figure is obtained, except that these parameters = 1 do not include the emitted light with a peak wavelength of 450 nm. In addition, these parameters do not include individual cells of holes defined by the nearest neighbor distance (NND). Based on the various patterns proposed above, it can be known that all patterns that meet the basic principles mentioned above can improve the extraction efficiency of 100. It is certain that by adding quasicrystal, pattern structure or complex periodic pattern detuning, 疋 can be effectively improved. / 'In some embodiments, emitted by the LED 100 and in the light generating area

200428682 V. Description of the invention (42) The total light intensity (total amount 〇i light) generated by domain 1 30 is at least about 45% (for example: at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) will be emitted through the upper surface 1 10. In some embodiments, the LED 100 can have a relatively large cross-sectional area, so that the LED 100 can still pass through the LED 100 to exhibit effective light extraction. For example, at least or more of the edges in the LED 100 may be at least about 1 millimeter (mm) (mi 1 1 meter) (for example: at least about 1.5 mm, at least about 2 mm , At least about 2.5 mm, at least about 3 mm), and at least about 45% of the total amount of light emitted by the LED 100 and generated in the light generating area 130 (for example, at least about 50% (, At least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) will be sent through the upper surface 110. In this way, the LED can have a relatively large cross-sectional area (for example, at least about 1.5 mm X at least about 1.5 mm), thereby exhibiting ideal power conversion efficiency . In some embodiments, the extraction efficiency of an LED with the LED 100 design is substantially independent of the length of the edge of the LED. For example, compared to a design with LED 100 and at least one or more edges of which has an extraction efficiency of about 0.25 mm, a design with LED 100 and at least one or more of which has an edge of about 1 In terms of the extraction efficiency of the LED of mm, the difference between the two is less than about 10% (for example: less than about 8%, less than about 5%, and less than about 3%). The extraction efficiency of an LED is the ratio between the light emitted by the LED and the intensity of light produced by the light-emitting device.

1057-6267-PF (N2) .ptd Page 46 200428682 V. Description of the Invention (43) (energy) or "photons". In this way, the LED can have a relatively large cross-sectional area (for example: at least about 1 mm X at least about 1 mm), thereby exhibiting ideal power conversion efficiency. In some embodiments, the quantum efficiency of an LED with the LED 100 design is substantially independent of the length of the edge of the LED. For example, compared to the quantum efficiency of an LED with a design of LED 100 and at least one or more edges of about 0.25 mm, a design with LED 100 and at least one or more edges of about 1 mm In terms of the quantum efficiency of LEDs, the difference between the two is less than about 10% (for example: less than 8%, less than 5%, and less than 3%). The quantum efficiency of the LED proposed here is: the number of photons generated by the LED, and the hole-recombinations that occur in the LED. The LED can have a relatively large cross-sectional area (for example: at least about 1 mm X at least about 1 mm), thereby exhibiting good performance. In some embodiments, the wall plug efficiency of an LED with the LED 100 design is substantially independent of the length of the edge of the LED. For example, compared to an LED with a design of LED 100 and at least one or more edges having an edge of about 0.25 mm in electro-optical conversion efficiency, a design with LED 100 and its at least one or more In terms of the electro-optical conversion efficiency of an LED with an edge of about 1 mm, the difference between the two is less than about 10% (for example, about less than 8%, less than about 5%, and less than about 3%). The electro-optical conversion efficiency of the LED proposed here is: the injection efficiency of the LED (the number of carriers injected into the light-emitting device, and the number of recombined carriers in the light-emitting area of the light-emitting device)

1057-6267-PF (N2) .ptd Page 47 200428682 V. The ratio between the two aspects of the description of the invention (44)), the radiation efficiency of the LED (a radiation result caused by the recombination of holes) ( radiativeevent), the ratio between the total number of holes recombined), and the extraction efficiency of the LED (the ratio between the number of photons emitted by the LED and the total number of photons formed) (Product) ° In this way, the LED will have a relatively large cross-sectional area (for example: at least about 1 mm X at least about 1 mm) ', thereby exhibiting good performance. In some embodiments, the angular distribution of the light emitted by the LED 1000 can be controlled ingeniously via the upper surface 110. In order to improve the extraction efficiency of entering at a given solid angle (given solid ang 1 e) (for example: entering a solid angle around the normal direction of the upper surface 110), here is a solution for As described above, a Fourier transform of the dielectric function that varies spatially is checked. Figure 13 shows the Fourier transformation construct ion of two ideal triangular lattices with different lattice constants. In order to improve the extraction efficiency, the number of inverted lattice vector G points in the encapsulant 1 ight 1 ine and the inward lattice G in the material light line are increased. The point's scattering intensity (ε g), this method implies that the effect as proposed in Figure 6 can be achieved by increasing the nearest neighbor distance (NND). However, ′ here pays special attention to the increase in the extraction efficiency of entering the three-dimensional angle I ′ This three-dimensional angle is centered on the normal direction of the upper surface 丨 丨 〇. Therefore, ‘under the hope of reducing the radius of the light level of the sealant to achieve the limitation of the inverted lattice vector G. point i introduction, the inverted lattice direction

l〇57-6267-PF (N2) .ptd Page 48 200428682 V. Description of the invention (45) " " '---- The quantity G will be greater than (M (ne)) / c, that is, G > (M (ne)) / c. Therefore, by reducing the refractive index of the sealant (the bareminimum is to remove all sealants together), the system can obtain a larger proximity to the adjacent distance (NND), thereby increasing The number of points of the inverted lattice vector G in the light energy level of the material can be obtained, and the extraction in the direction of the $ line (Fk = 0) can be caused by the material light energy level system. The diffraction becomes a higher order (oblque angles). Figure 14 shows the trends described above, as well as the efficiencies of entering the solid angle (given by the collective half angle (c0Uec1: inon half-angle) in the figure). The data shown in Figure 14 are obtained by calculating the parameters used for LED 100 in Figure 2, but these parameters do not include the emitted light with a peak wavelength of 53 ° and 3 4 nm. , The refractive index of the sealant is 1.0, the thickness of the p-doped material layer is 160 nm, and the thickness of the light-generatmg layer is 30%, as shown in FIG. 14 The closest neighbor distance (NND) (a) for the three curves, and the depth of 1 · 2 7a, 0 · 7 2 a, 1 · 2 7a + 4 0 nm in proportion to, a !, The opening diameter and the thickness of the n-doped material layer. As the lattice constant increases, the extraction efficiency at narrow angles and the total extraction efficiency at all angles can increase. However, as far as the larger lattice constant is concerned, even if the total extraction efficiency at all angles is increased, the higher order mode formed by diffraction in the sealant will limit the extraction efficiency of narrow angles. . According to the calculation result of the lattice constant of 460 nm, it can be seen that the extraction efficiency of the half-angle in the set is greater than 25%. In other words, only at the dibody angle of about 13.4%

200428682 V. Description of the invention (46) "-一 "-Nearly half of the bows in the upper hemisphere (the upper hemisphere) 丨 the light is collected ', so as to present the alignment effect of this pattern (Collimat100n effect). It is certain that for any number of points of the inverted lattice vector G within the light energy level of the material, the number of inverted lattices within the sealant light energy level when the wave vector k = 0 in the flat 3 plane is limited. For the pattern of the number of G points of the vector, the extraction efficiency of entering the solid angle can be improved by these patterns. The solid angle is centered and aligned with the normal direction of the upper surface. It is worth noting that the above method is particularly effective in reducing the source etendue. This source tone is usually proportional to n2, where 〇 is the refractive index of surrounding material (eg, sealant). . Therefore, by reducing the refractive index of the encapsulant material layer in LED 1000, this will result in more parallel col 1 imated emissions, fewer source sound ranges, and lower High surface brightness (surf ace bright ness) (here it is defined as the total brightness introduced into the source range). In some embodiments, the sealant system formed by air can reduce the source sound range, but thus increases the normal direction of entering a given collection angle and centering on the upper surface 11 . In some embodiments, when the light generated by the light generating region 130 is emitted from the LED 100 through the upper surface 110, the mutual parallelism of the light distribution is Lambian distribution. good. For example, when the light generated in the light generating region 130 is emitted from the LED 100 through the upper surface 1 10, the surface of the dielectric layer

1057-6267-PF (N2) .ptd Page 50 200428682 V. Description of the light emitted by (47), at least about 40% (for example: at least about 50%, at least about 70%, at least (About 90%) is up to about 30. (For example: at most about 25 °, at most about 20 °, at most about 15.), and this angle is orthogonal to the upper surface U0. It can be seen that 'the ability to relatively draw a high proportion of light at a desired angle, or the ability to draw a relatively high amount of light at the same time, by this ability can be produced with a relatively high density The LED 'is thus provided for use as a given wafer. For example, a 'has at least 5 LEDs in a wafer per square centimeter. In addition, in some embodiments, the wavelength of the light emitted from the package 1 £:]) 1 〇 can be modified relative to the wavelength of the light generated by the light generating region 丨 3 〇. In the example shown in FIG. 5, an LED 300 has a layer containing a phosphor material 180, and the phosphorus-containing material layer 18 is provided on the upper surface 11 {). The extra-stone material can interact with the light of a predetermined wavelength generated by the light generating region 130 to achieve a parent interaction, so as to generate the required specified wavelength. In the 47-blade embodiment, the light emitted by the packaged LED 100 can be substantially white light. In addition, in a specific embodiment, the 'phosphorus material in the plate material layer 180 may be selected from (γ, Gd) (A1, Ga) G: (^ + or yttrium aluminum garnet phosphor ^^ "㈠ ^^' ^ 测 ^ ⑽, produced. When excited by the blue light (blue g) emitted from the light generating region 130, the phosphorus material in the phosphorus-containing material layer 180 can be customized and activated by the Lin material system. Emits a broad spectrum, centered

1057-6267-PF (N2) .ptd Page 51 200428682 V. Description of the Invention (48) Lights (eg, isotropic) aligned with yellow light wavelength (y e 1 1 0 w w a v e 1 e n g t h s). The viewer of the total light spectrum emitted by the packaged LED 100 can see the yellow phosphor broad emission spectrum and the blue light indium gallium nitride narrow emission spectrum ( blue InGaN narrow emission spectrum) 'This is usually a mixture of two Spectra and perceive white light. In some embodiments, the phosphorus-containing material layer 1 80 can be arranged substantially uniformly. Above Π0. For example, the distance between the top 15 1 of the pattern 15 and the top 1 8 1 of the phosphorus-containing material layer 1 80 can pass through the upper surface 110 and be slightly less than 20% (for example: slightly less 10%, slightly less than 5%, slightly less than 2%). Compared with the cross-sectional dimension of the surface of the LED 1 100, the filler material layer 1 80 usually has a smaller thickness, and its size is about 1 mm. In addition, the phosphorus-containing material layer 180 is substantially deposited on the surface 110 in a uniform manner, and the phosphorus material in the phosphorus-containing material layer 80 is substantially pumped uniformly through the light emitted from the surface 110. give away. Compared to the cross-sectional size of the table of LED 100 = 110, it can be known that due to the thickness of the phosphorus-containing material layer 丨 800, the light emitted by the light generating area 130 can be distributed over the entire area of LED 100. = U 〇, upper, and almost uniform way to come / become a low-wavelength light in the stone-containing material layer 1 8 ◦. Therefore, with a relatively thin and uniform layer of stone-sea-containing material 1 800, it can be used as a surface 1 to emit light with 22π through LED 1 00, thereby making it a surface 1 Function of position on 10. Generally speaking, LED 100 series can be manufactured according to different needs.

200428682 V. Description of the invention (49) The production of LED 100 usually includes various steps of deposition, laser process (1 a s er p r oc s s i n g), lithography, etching and other steps. Please refer to FIG. 16. In an LED wafer 500, an LED layer stack of material is deposited on a sapphire substrate 502. This LED The wafer 500 can be used directly after being purchased by a locker (commercia 1 vend 〇r). A buffer layer 504 is sequentially arranged on the sapphire substrate 502, an n-doped Si: GaN layer (506), aluminum gallium nitride / AlGaN / GaN heterojunction or superlattcie, wherein the AlGaN / GaN heterojunction or superlattice system includes a current-spreading layer 5 08, InGaN / GaN multi-quantum well light-generating region 510, a p-doped Mg: gallium nitride layer (p-doped Mg: GaN layer) 512. In general, the diameter of LED wafers used in business is about 2-3 inches. After the wafers are processed, a plurality of LED dice can be formed by cutting the wafers. These LEDs The die system can be used to make individual devices. Before the wafer dicing operation is performed, the magnesium-doped (p-doped) hafnium nitride layer 1 2 8 is positioned in the light-generating region 1 through several wafer scale processing steps. On the same side as the position of 30, the dream is used as a mirror layer 126. Refer to Figure 17, a relatively thin nickel layer (relative; [y thin

200428682 V. Description of the invention (50) nicke 1 1 ayer) 5 2 0 is based on deposition (for example, electron beam evaporation) is used to p-change the town. In this way, a p-type ohmic contact can be performed on the p-doped magnesium: gallium nitride layer 51 2 ° A silver layer 5 22 system is deposited (eg, using electron beam evaporation) on Nickel layer 5 2 0. A relatively thick nickel layer 524 is deposited (eg, by electron beam evaporation) on the silver layer 5 2 2. The nickel layer 5 2 4 can be used as a diffusion resistance layer (d i f i u s i ο n b a r i e r), so as to reduce the diffusion of contaminants into the silver layer 522. A gold layer 52 6 is deposited (for example, by electron beam evaporation) on the nickel layer 524. After the I1 trace, the LED wafer was subjected to a temperature between 4,000-600 ° C (Celsius), 30 ° C in nitrogen, lice gas, air, or forming gas. And 300 seconds of annealing, so as to achieve ohmic contact. Please refer to FIG. 18 'A submount wafer 600 is formed by sequentially depositing an aluminum contact layer 604 (eg, electron beam evaporation) on p-doping Silicon wafer (p — doped silicon wafer) 602. A gold layer 608 is deposited on the aluminum contact layer 604, and an Au-bonding iayer 6i〇 system is deposited (for example, using electron beam evaporation) on the gold layer 608. on. Subsequently, the carrier wafer 600 is annealed in nitrogen, hydrogen, air, or molding gas at a temperature between 350-50 (TC, 30 and 300 seconds), so as to achieve Ohmic contact: for pressure between 0 and 0.5 MPa, temperature between 2 0-4 0 0 ° C

200428682 V. Description of the invention (51) When the gold layer 5 2 6 of the LED wafer 500 is brought into contact with the gold-tin bonding layer 6 10 of the carrier wafer 600, the LED crystal can be achieved in this way. The combination between circle 5 0 and carrier wafer 6 0 0 (for example: using thermo 1 machinery (therma 1-mechanica 1 press)). An eutectic bond (e u t e c t i c b ο n d) is formed in the indium gallium nitride / gallium nitride multi-quantum well light generation region 51 and the gold bonding layer 610. Subsequently, the opposite party; the wafer sandwich sandwiched with each other was cooled, and the sandwich sandwich sandwiched on the press was removed. After the bonding operation is completed, the sapphire substrate 502 can be removed from the bonded wafer structure by a laser liftoff process. For example, U.S. Patent Nos. 6, 4 2 0, 2 4 2, 6, 0 71, 795 disclosed the technology of the related laser lift-off process, and hereby refer to these two cases and incorporate them into this case. in. In some embodiments, a laser beam of 2 48 nm passes through the sapphire substrate 502 and is close to the interface between the η-doped silicon: gallium nitride layer 506 and the sapphire substrate 502. In this way, the η-doped silicon: gallium nitride layer 506 is locally heated to decompose the η-doped silicon: gallium nitride layer 506 sublayer. After that, the wafer sandwich is heated until it has passed! The temperature above the melting point of gallium, so that the sapphire substrate can be removed from the wafer sandwich by a lateral force (for example: using a cotton swab (c 〇tt〇n swab)). Subsequently, the exposed GaN surface is cleaned (for example, using a hydrochloric acid bath) to remove the liquid gallium (liqui (i galHum)) on the surface. Generally, when gallium nitride is used,

1057-6267-PF (N2) .ptd Page 55 200428682 V. Description of the invention (52) The sapphire substrate 5 0 2 on the GaN epitaxial layer stack was removed, 'is present in the nitride nitride The stress (st ra i η) in the crystal push stack (for example: due to the lattice difference between the sapphire substrate 5 0 2 and the gallium nitride epitaxial stack) (1 at ti ce mi sma t ch) system Can be removed at the same time. In addition, since the gallium nitride epitaxial stacking system bonded to the sapphire substrate 502 may continue to form warpage or warping, the system can make the gallium nitride epitaxial stacking self-warping or bending Bending to achieve a relaxing effect, and it can be assumed that the exposed surface of the n-doped silicon: gallium nitride layer 506 has a relatively flat shape. When the submount 120 is used to prevent cracks during the laser lift-off process, the coefficient of thermal expansion must be considered. In addition, the number of cracks in the laser lift-off process can be reduced by the substantial overlapping and repeated processes of the electromagnetic fields in the step. Please refer to Figure 19, for η-doped silicon: After the exposed surface of the gallium nitride layer 50 is etched, the layer structure formed with a desired thickness can be provided as a final device (final deviceK FIG. 20). After the etching operation, a roughened surface texture 70 0 can be formed on the surface of n-doped Shi Xi: GaN layer 506 under the action of the last name. The rough surface structure 70 0 can be subjected to pianarized and thinned (eg, chemical-mechanical process), so that η-doped silicon: gallium nitride layer 5 0 6 has reached a final thickness,

1057-6267-PF (N2) .ptd

Page 56 200428682 V. Description of the invention (53) It can make the surface smoothness (root mean square, rms) of the surface structure of the crude sugar 7 〇 less than 5 nm ° A flat interface (non-pianair interface) can be introduced into the LED 100 in a localized manner. In this way, the rough surface structure 700 can be used to improve the extraction efficiency of the LED 100. Compared with the microscopic smooth surface, when the light ray (1 ight ray) hits the surface structure 700 in multiple times, it will eventually be smaller than the critical angle of Snell s law ( Critical angle) impinges on the surface structure 700, and the rough surface structure 700 can greatly increase the possibility of this situation. After 70 has become the money-engraving process, a dielectric function pattern (dielectric functión p a 11 e r η) can be produced in the n-doped lithography: gallium nitride layer 506. First, a material (eg, a polymer) planarization layer (pianarization iayer) is placed on (eg, spin-coating) n-doped silicon: nitride On top of the gallium layer 506 'and a resist iayer 704 is provided (eg, bismuth transfer coating) on the planarization layer 702. Subsequently, by means of nano imprint lithography and etching processes, one of the patterns used to form the photonic lattice in the LED can be established on the η-doped substrate. Miscellaneous silicon: GaN layer 506. First, the part used to define the required pattern is imprinted in the resist layer 700, and is formed in a step-by-step manner (port i〇n—by-p〇rti〇n) on the crystal On all surfaces of the circle, in addition to the various features of the pattern 150 can be printed at the same time, i, after; at the same time, the area for the deposition of n contact pads (n_c〇ntact) during the dressing process 200428682

area. In the above manufacturing process, a .Λ ^ _ — — # 杂 石 夕: The surface of the gallium nitride layer 506 shows a flat twist makeup helmet technique on the substrate. The shape is better. For example, X-ray lithography (X-ray U ^ graPhy) or deep ultraviolet lithography (deep ultraviolet i ^ hography) can also be used to create a relevant image in the resist layer 704 '. When a resist layer is formed on the wafer and a pattern is established on the resist layer of the wafer ^, a predeposited etch mask can be placed on the n-doped silicon: nitride Above the surface of the grafting layer. One can use the resist layer 704 as a photomask, and the other pattern can be transferred from the resist layer 704 to the planarization layer 702 (for example: active Ion-etching process (reactlve-10n etching pr〇cess)). Subsequently, the planarization layer 70 2 is used as a photomask, and the pattern is transferred to the η-doped silicon: gallium nitride using the planarization layer 70 Layer 506, and after the etch of the doped shixi · gallium nitride layer 506 is completed, the removal operation of the planarization layer 702 can be performed (for example, the active oxygen ion surname (〇χ ygen _ base has been reactive-ion etching)) 〇 After the pattern is transferred to the n-doped silicon: gallium nitride layer 506, the phosphorus-containing material layer is optionally set in (for example: using Spin coating) n-doped stone: on the pattern surface of the GaN layer 506. In some embodiments, the reading system can be quite consistent Coating on the pattern surface (the coating layer along the bottom of the opening in the pattern surface and the side wall does not substantially have voids (v oids)). On the other hand, the sealing material The layer system may be provided on the surface of the η-doped silicon: gallium nitride layer 506 (for example, formed by chemical vapor deposition (CVD), sputtering, and subsequent evaporation) Liquid binder (1 iquidbinder) was suspended (suspensi ο η)).

1057-6267-PF (N2) .ptd Page 58 200428682

In some embodiments, the sealant material is a material. In some embodiments, after compression, the value of the two: 璘 ^ 璘 璘, = thlckness uniformity) is about less than the average thickness of the filling material (average thlcknessn = 20%, 15%, ι0%, ㈣ or less). = In some embodiments, the sealant material layer containing the dish can be evenly coated on the surface. U ¥ When the dielectric function pattern has been established on the doped silicon · gallium nitride layer 5 0 6 In the middle time, individual LED dies can be cut from the wafer. When the wafer processing and wafer testing are completed, the individual LED dies can be separated; Subsequently, packaging and testing of individual LED dies are performed. In addition, during wafer slicing operations, 'possible potential damage to the electrical and / or optical properties of the patterned LEDs may be through a side passivation step (si de wa 1 1 passivation step) and / or pre-separation deep oblique The corner etching step (pre-separated deep mesa etching step) is effectively reduced. The size of individual LED dies can be determined according to the size of the wafer. The shape of a bit of LED dies is square or rectangular, and the side length is between 0.5 mm and 5 mm. Standard photolithography is used to define the position of the crystal grains on the wafer. The produced crystal grains are used to excite the light-emitting device, and the evaporation is performed by 3 (for example, using an electron beam) (Evaporation) method to form a ^ ohmic contact at a specified position. If the LED die has been packaged, and the LED die is mechanically and environmentally protected, the packaging method can be accelerated.

1057-6267-PF (N2) .ptd p. 59 200428682

, The ability to receive. For example, when no sealant is used, a transparent cover is used to cover the LED die, so that the surface pattern of the η-doped silicon: gallium nitride layer 506 can be performed. protection. The cover glass 140 is attached to the supporting member 142 by a fully-melted or semi-melted glass frit (gUssy fri), and the glass frit is melted in a furnace 2. For example, in The opposite ends of the plurality of support members 42 are connected to each other by cap welding or epoxy resin. Generally, the support members 4 and 2 are nickel-plated. Layer to accelerate its soldering onto the package's gold-plated surface (plated surf ace). It is believed that under the effect of the packaging layer of LED 100, it can tolerate higher power loads per unit area. In addition, for standard LEDs, the degradation of the encapsulation layer is usually regarded as a failure mechanism, so the use of the encapsulation layer can be avoided. Since LEDs are cut through a large-area planarized wafer, the light output per unit (light output) does not decrease with area. In addition, since the cross-sections of individual LEDs cut by the wafer are only slightly larger than the light-emitting surface area of the LEDs, these individual and separated addressable LEDs can be tightly packed using an array method. Furthermore, if one of the plurality of LEDs fails (for example, due to a large defect), but the individual light-emitting devices are arranged in a relatively tight array, their efficiency will not be significantly affected. influences. ^ " From this, it can be seen that the features proposed in the above embodiments are equally applicable.

200428682 V. Description of the Invention (57) Presented in other embodiments. For example, although the specific thickness is disclosed in the above-mentioned publications, among the related layer structures of At and related layers, their limitations can also be adopted. Light-emitting devices, in other words, light-emitting devices can be molded using degrees. -In general, the individual layer structure can also be used in any and specified multiple push stacks 122 = 'In I 4 (tptuat! I4lr ^ ^ ^ (〇PtlCal m〇 ^ es) ^ ^ ^ specific layer structure In the implementation example, Miu ^ ^ r in the light-emitting device has been included. The silicon doped (Π-doped) gallium nitride layer 1 may be at least about 100 ηιη (for example, · At least about 2,000-, at least about 300 nm, at least about 400 nm, at least 20 nm) and at most about 10 micrometers (for example, at most about 5 microns, to (Approximately 3 microns, at most about 丨 microns). In some embodiments, the thickness of the magnesium-doped (p-doped) gallium nitride layer 1 28 may be at least about 10 nm (for example, at least About 25 nm (at least about 40 nm) and / or at most about 1 micrometer (for example: at most about 500 nm, at most about 100 nm). In some embodiments The thickness of the silver layer 126 may be at least about 10 nm (for example, at least about 50 nm, at least about 100 nm) and / or at most about 1 micron (for example, at most about 5 〇〇ηπ], at most about 250 nm). In some embodiments, the thickness of the 'light-generating region 3' may be at least about 10 nm (for example: at least about 25 nm, at least about 50 nm , At least about 100 nm) and / or at most about 500 nm (e.g., at most about 250 nm, at most about

1057-6267-PF (N2) .ptd Page 61 200428682 V. Description of the Invention (58) " 一 " '' 一 ~ — 1 〇 〇 ηπι). "As can be seen from other examples, although the features related to Hght-emitting diodes are disclosed in the above description, it is not intended to be a limitation, and other light-emitting diodes may also have the same Features' Similar devices include laser and optical amplifiers (laser and 〇ρΐ i ca 丨 amp 1 ifi ers). From other examples, it can be known that the above-mentioned aluminum gallium nitride layer 丨 3 2 series can be used as silicon A doped (a-doped) gallium nitride layer 134 is a separate layer; in some embodiments, the current spreading layer may be integrally formed on the silicon doped (n-doped) nitride. The gallium layer 134. In some embodiments, the current spreading layer may be a relatively high silicon-doped (η-doped) gallium nitride layer 134 or a heterojunction with respect to adjacent layers. This forms a two-dimensional electron gas. As another example shows, although the use of semiconductor materials is disclosed in the above description, it is not intended as a limitation, and other semiconductor materials can also be used in Among the embodiments, in general, any Conductive materials (for example, 苐 III-V semiconductor materials, organic semiconductor materials, silicon) can be used in light-emitting devices, and the light produced by the daggers The light-generating materials include: InGaAsP, A1InGaN, AlGaAs, InGaAlp. Organic light-emitting materials emitting materials) including tris-8-hydroxyquineline (Alq3)) (aluminum

1057-6267-PF (N2) .ptd Page 62 200428682 V. Description of the invention (59) tris-8-hydrOxyquinOline (Alq3)) small molecule, poly [2-methoxy-5- (2 -Ethylhexyloxy) -1, 4 -p-phenylene diene] [Poii [2-methoxy-5- (2-ethylhexyloxy) -1, 4-vinylenephenylene]] or p-phenylene (MEH-PPV) conjugated polymers ° According to another example, although LEDs with large areas are disclosed in the above description, they are not used as a limitation, and small-area LEDs are equally applicable. To achieve the same characteristics (for example: the edge of the LEDs is less than the standard value of 300 microns). As another example, although it is disclosed in the above description that the dielectric function system can be changed spatially according to the pattern with holes, it is not used as a limitation, and the pattern can also be achieved by other patterns, such as: In an appropriate layer structure, the pattern system can be formed by continuous veins and / or discontinuous veins. In addition, the dielectric function can be changed without using holes or veins. For example, materials with different dielectric functions can be patterned into an appropriate layer structure. In addition, by combining this type of pattern (c 0 m b i n a t i ο n s), the change of the dielectric function can also be achieved. As another example, although it is disclosed in the above description that the layer structure 1 2 6 is formed by using silver, it is not used as a limitation, and the layer structure 丨 2 6 can also be formed by using other materials. In some embodiments, the layer structure 126 is made of a material capable of reflecting light, so that one layer structure reflects 50% of the light generated in the light generating area, and then the reflected light impinges on a Reflective material layer (a 1 ayer 〇fa

1057-6267-PF (N2) .Ptd Page 63 200428682 V. Description of the invention (60) reflective material), wherein the reflective material layer is located on the support member and a multi-material push stack (multl —layer stack mater) lal). This type of material includes: distributed Bragg reflector stacks, various metals and alloys, such as: inscriptions, alloys with inscriptions. As another example, it can be seen that the carrier 120 series can be made of various materials. These materials include copper, copper-tungsten, aiuminuin nitride, and silicon carbide. carbide), beryllium-oxide, diamonds, TEC, aluminum. As another example, it can be seen that although the layer structure 1 2 6 in the above description is made of a heat dissipating material, the light emitting device in other embodiments may include a separation layer (for example, provided in the layer structure 126, Carriers (between 120 and 20) are used as a heat sink. It is worth noting that the layer structure 1 2 6 in this example is made of a material that may or may not have to be passed through the heat sink. As another example, it can be seen that, in addition to the way in which the entire light-generating region is proposed to change the pattern in the dielectric function, only by extending the silicon doped (n-doped) nitride The method in the gallium layer 丨 3 4 is to change the pattern in the k dielectric function (in essence, it can reduce the surface recombination carrier losses): In some embodiments, The pattern in the dielectric function can also be changed by extending beyond the silicon doped (n-doped) emulsified gallium layer 1 34 (for example, · extending into the aluminum gallium nitride layer 132, the light generating region 13 and / Or magnesium

1057-6267-PF (N2) .ptd Page 64

200428682

V. Description of the invention (61) Doped (P-doped) gallium nitride layer 128) As another example, it can be seen that although air is provided on the upper surface 11 〇, cover glass 1 4 in the above embodiment. Between 0, in other embodiments, other materials and / or air may be disposed between the upper surface 110 and the cover glass. Generally speaking, the refractive index of this type of material must be at least about 1, at least about less than 1 · 5 (for example: at least about less than 1 · 4, at least about less than /, 3, at least about less than 1.2, at least about Less than 1 · 1), its material system includes (nitrogen), air, or other gases with high thermal conductivity (therma; i-gas conductivity). In this embodiment, the upper surface 11 () may not be patterned, for example: the upper surface 1 丨 〇 may be a non-patterned surface with a roughened surface ^ (for example, it may have any Distribution, various sizes and shapes, its wavelength is less than λ / 5). In some embodiments, the light emitting device may include a layer of phosphor material (layer phosphor), and the layer of phosphor material is coated on the upper surface 110, the cover glass 140, and the supporting member 142. In some embodiments, the cover glass 14 in the light emitting device may be provided with a phosphor material, and the upper surface 110 may or may not be patterned. In another embodiment, the light emitted by the light generating region 130 may be liver (or violet (blue) or blue (blue)), and a red dish is included in the filling material layer 18o. Material (red ph〇sph〇r materiai) (e.g. L2 02 S. Eu3 +), green disc material (e.g. ZnS: Cu, Al, Mn), blue phosphor material (biue Phosphor matenal) (for example: (Sr, Ca, Ba, Mg, (p〇Aci:

Eu2 +).

Page 65

200428682 Brief Description of Drawings Figure 1 is a schematic diagram showing a light emitting system. Fig. 2 is a side view showing a light emitting diode (LED) having one of the patterned surfaces. Fig. 3 is a top view showing a pattern surface of a light emitting diode (LED) according to Fig. 2. Figure 4 shows a graph related to the extraction efficiency of a light-emitting diode (LED) with a pattern surface, where the pattern surface is used as a detuning parameter ° Figure 5 A schematic representation of a patterned surface of a light-emitting diode (LED). Figure 6 is a graph showing the extraction efficiency of a light-emitting diode (LED) with a patterned surface, where the pattern surface is used for As a nearest neighbor distance ° Figure 7 is a graph showing the extraction efficiency of a light emitting diode (LED) with a pattern surface, where the pattern surface is used as a filling factor 〇 FIG. 8 is a top view showing a pattern surface of a light emitting diode (LED). Fig. 9 is a graph showing extraction efficiency of a plurality of light emitting diodes (LEDs) having different patterned surfaces. Fig. 10 is a graph showing extraction efficiency of a plurality of light emitting diodes (LEDs) having different pattern surfaces.

1057-6267-PF (N2) .ptd p. 66 200428682

Brief Description of Drawings Figure 11 is a graph showing the extraction efficiency of a plurality of light emitting diodes (LEDs) with different pattern surfaces. Figure 12 is a graph showing the extraction efficiency of a plurality of light emitting diodes (LEDs) with different pattern surfaces. — Figure 13 is a schematic diagram showing the Fourier transform of two light emitting diodes (LEDs) with different pattern surfaces, where the different pattern surfaces are compared with the radiation emission light errors of two light emitting diodes (LEDs). (radiation emission spectrum). Figure 14 is a graph showing the extraction efficiency of a plurality of light emitting diodes (LEDs) with different pattern surfaces, wherein the different pattern surfaces are used as an angle. Fig. 15 is a side view showing a light emitting diode (Lgj)) on one of the pattern surfaces and a phosphor layer formed on the pattern surface. Fig. 16 is a side view showing a patterned body (LED) formed by forming an epitaxial iayer precursor. Nine-pole Figure 17 shows a side view of a light-emitting diode (LED) having a patterned surface formed by the fabrication of an epitaxial layer precursor. Figure 18 shows a side view of a light emitting diode (LED) with a patterned surface formed by the fabrication of an epitaxial layer precursor. Figure 19 shows a side view of a light emitting diode (LED) with a patterned surface formed by the fabrication of an epitaxial layer precursor. ′, FIG. 20 is a diagram showing a tool formed without the production of an epitaxial layer precursor.

200428682 Schematic illustration of a side view of a light emitting diode (LED) with one of the patterned surfaces. Symbol description 1 00 ~ Light emitting diode (LED) 120 ~ Carrier 1 2 4 ~ Bonding layer 1 2 6 ~ Silver layer (layer Structure, mirror layer or p-contact layer) 1 2 8 ~ ball doped (p-doped) nitride nitride layer 1 3 0 ~ light generation region 1 3 2 ~ aluminum gallium nitride layer 1 3 4 ~ Shi Xijing Doped (η-doped) gallium nitride layer 1 1 0 ~ upper surface 1 2 2 ~ multiply push stack 1 3 6 ~ contact pad 140 ~ cover glass 1 4 4 ~ sealing material layer 1 5 0 ~ open Hole 1 8 0 ~ filling material layer 2 3 0 ~ hexagonal monomer 5 0 ~ lighting system 5 0 2 ~ sapphire substrate 1 3 8 ~ ρ edge contact pad 142 ~ support member 1 4 6 ~ depth 1 5 1 ~ top 1 8 1 to top 300 to LED 500 to light emitting diode wafer 5 0 4 to buffer layer 5 0 6 to η-doped silicon: gallium nitride layer 5 0 8 to current spreading layer 5 1 0 to indium nitride GaN / GaN multi-quantum well light generation region 512 ~ ρ-doped magnesium: gallium nitride layer 5 2 0 ~ nickel layer 5 24 ~ nickel layer 6 0 ~ array 5 2 2 ~ silver layer 5 2 6 ~ gold layer 6 0 0 ~ carrier wafer

1057-6267-PF (N2) .ptd Page 68 200428682 Brief description of the diagram 6 0 2 ~ p-doped silicon wafer 6 0 8 ~ Gold layer 7 0 0 ~ Surface structure 7 0 4 ~ Resistive layer a ~ Crystal Lattice constant (nearest neighbor a '~ center-to-center distance G ~ inverted lattice vector η ~ order △ a ~ modulation parameter ω ~ light frequency 6 0 4 ~ aluminum contact layer 6 1 0 ~ golden bond layer 7 0 2 ~ planarization layer A 7, A 1 9 ~ texture (NND))

Fk ~ Fourier component k, k '~ in-plane wave vector Sk ~ emission source £ e ~ dielectric function (scattering intensity)

1057-6267-PF (N2) .ptd Page 69

Claims (1)

200428682 6. Scope of patent application1. A light-emitting system including a light-emitting device, the light-emitting device includes: a multiple layer of stacked material, including a light generating area and a first layer, the first layer is generated by the light Supported by a region, wherein the light generated by the light generating region can be emitted from the light-emitting device through the surface of the first layer under the design of a surface of the first layer; The surface has a dielectric function that is spatially changed according to a pattern; the pattern has an ideal lattice constant and a modulation parameter, the modulation parameter is greater than zero; and Under the design of the device, when the light generated by the light generating area can be emitted through the first layer, the light can be emitted from the light-emitting system. 2 If the patent application scope of the first light-emitting system is a projector, portable Integrated product sign, system, vehicle lighting system, system, camera flash, medical device system, integrated photovoltaic system, military area photodynamic legal treatment system, night vision goggles, too Ming systems, airport runway lighting system enclosure, a light source and a plurality of wearable 3. The composition range of the patent application system} The light-emitting system is a projector. The surface is emitted from the light emitting device. The lighting system, wherein the electronic device, computer screen, large-area general lighting system, high-brightness lighting, communication system, security sensing system communication system, bio-sensing system, solar transportation lighting system, emergency, airline Selected from the group consisting of lighting system and surgical surface. The lighting system, wherein the 1057-6267-PF (N2) .ptd Page 70 200428682 6. Scope of Patent Application 4. The light-emitting system described in item 3 of the scope of patent application, wherein the projector is a rear projection type projector. / 5 · According to the lighting system described in item 4 of the scope of patent application, the rear projection type projector is a television / back projection type projector. ) 6. The lighting system as described in item 3 of the scope of patent application, wherein the projector is a front-projection projector. / 7; The lighting system described in item 1 of the scope of patent application The lighting system is a vehicle lighting system. 8 · The lighting system described in item 1 of the scope of patent application The lighting system is a general lighting system. 9. The light-emitting system of the light-emitting system as described in item 1 of the scope of the patent application includes a plurality of light-emitting devices, each of which includes a multiple layer of stacked material, including a light-generating area and a first layer. One layer is supported by the light-generating area, wherein each of the light-emitting devices includes: the one, the one, the one, and the one under the design of a surface of the first layer, the light-generating area. The generated light can be emitted from the light emitting device through the surface of the first layer; the surface of the side first layer has a dielectric function, and the dielectric function is spatially changed according to a pattern; the The pattern system has an ideal lattice constant and a modulation parameter, and the modulation parameter system is greater than zero; and / ^ Under the design of the light-emitting device, when the light generated by the light passes through the surface of the first layer, the light-emitting device rhymes into a place. 1057-6267-PF (N2) .ptd Page 71 200428682 6. The scope of the patent application is 13 inches, the light 10 · such as the light-emitting device 11. If the light-emitting system 12 · If the light-emitting light is emitted in the light If necessary, the light 13. If the high beam is generated and the light is emitted, the light is connected 14. If the light system is part of the light 15. If the light systems are the same 16. One can apply for special Including the application-specific device, the device, the light device, and the device, the device can be issued from the device in the application area to the application, including the complex device. Included in the design of the first layer of the luminous range of the design is generated, the luminous range of one less luminous range has a disadvantageous luminous emission wave system, including: The lighting system described in item 9 is arranged in a pattern. A plurality of arrays of the lighting system devices described in item 10. The light-emitting system according to item 1 has a casing with a surface; inside the casing; and, under the action, the surface of the edge light generating area is emitted from the light-emitting system. In the light-emitting system described in item 1, light can pass through the first layer, and the light is emitted from the light-emitting system's element. The light emitting system and device described in item 1 emit at the same peak emission wavelength as those light emitting devices. The light-emitting system, device described in item 1, and the light-emitting device are directors. The light-emitting device includes a light-emitting device in which, 'wherein: where the field-generating device is emitted, and before the surface emerges, at least one of which is substantially-multiply pushing the material layer, including a light-generating device. Area and a first floor Page 72 200428682 6. The scope of the patent application The first layer is supported by the light generating region I Λ, and in i, the light generated by passing through a surface of the first layer ^ "T generating region can pass through ^ "In ten actions," issued by the light-emitting device; Λ the surface of the first layer, and from the surface, the surface has a dielectric a ^ aperiodic pattern and space above "the dielectric function system According to a light-emitting device, the light-emitting device is packaged under the design of the light-emitting device, and the light can pass through the note of the first layer. 'When the light-generating area is generated, the light can pass from the light-emitting system =发 = and 17 · light emitting systems emitted from the light emitting device, including: a multiple layer of push-up material, including ~ the first layer is an area formed by the light generating area and a first layer, λ-, 1 Fork bearing, J: Middle, through one surface of the first layer, the light generated in the biological area can be emitted by the light-generating device through the action of the light and the light; The surface is complicated by a dielectric function The periodic pattern is spatially counted. The "electrical function is based on a design change in the design of the light-emitting device, and the light can pass through the first layer when the * the light generating area is generated. Emitted from the light-emitting system: and 18 from the light-emitting device-a kind of light-emitting system 'includes: a P-doped material and a stacked material layer, including-a material layer, and a n-doped material layer; As well 1057-6267-PF (N2) .ptd 200428682 Sixth, the scope of patent application ^ I reflective material layer, can be generated through the light generation area, and hit # at least about 50% of the photosynthetic material on the reflective material layer The reflective material of the injecting material layer is reflected by the reflective material, wherein, "the surface of the n-doped material layer Λ is designed by the anti-region, is generated by the light; the light-emitting box wire can pass through the n-doped material The surface of the layer ... / The surface of the doped material layer has a dielectric function, and the electrical conductivity is spatially changed according to the pattern; β A The the doped material layer and The distance between the reflective material layers is + π the distance between the Π doped material layer and the reflective material layer; and the distance from the light emitting device under the design effect of the light emitting device is : Lt the surface of the n-doped material layer and the front line from the light emitting device can be emitted from the light emitting system. Including: 19 types of light-emitting system 'including-light-emitting device', the light-emitting device includes the first =: == brackets-light-generating area and --th-layer, = light generated by the light-generating area can emit light through the table ST Issued by the farm, and the surface system has a Ϊvariable 'the dielectric function is based on the -pattern and spatially strikes at: = only the Γ layer' can generate at least through the light generation area and hit at least the material layer About 50% of the light will be reflected by the reflective material of the reflective layer. 200428682 6. Scope of patent application The light generating area is located in the first room of the reflective material layer; under the design of the light emitting device, when the light generated by the light generating area can pass through the surface of the first layer When emitted from the light emitting device, the light can be emitted from the light emitting system. A light-emitting system includes a light-emitting device, the light-emitting device includes: a multi-ply material layer including a light-generating area and a first chip; the first layer is generated by 5H Supported by the area, the light generated by the light-generating area can be emitted from the light-emitting device to face the surface of the first layer under the design effect of the first surface of the first layer; and Material, which is in contact with the surface of the first layer, and the material is reduced to less than about 1.5, wherein the light emitting device is covered by a packaging method, and under the design of the light emitting device, when the light is generated When the light generated by the area ^ can pass through the surface of the first layer and come out of the light emitting jealousy department, the light can be emitted from the light emitting system. Xiafa 21 · A light-emitting system including a light-emitting device, the light-emitting dream includes:, a summer bag with multiple layers of push-pull material, including a light-generating area and a first first layer formed by the light-generating area The support, through the design of the first layer and the second surface, 'the light generated by the light generating area can be thin f the surface of the first layer and emitted from the light emitting device, and the surface = by 有-介Electrical function 'The dielectric function is changed according to a pattern, with changes; and 1057-6267-PF (N2) .ptd Page 75 The light is emitted through the surface of the first layer, and a parent interaction occurs with the phosphorous material, so that the light emitted through the phosphorous layer is white in nature. 'Among them, the height of the light-emitting device and its area are two: D 200428682 6. The scope of the patent application is a scale material supported by the surface of the first layer, wherein the side wall of the light device is essentially completely free of The phosphor material, and under the design of the light emitting device, when the light generated in the light generating region can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. 22. A light-emitting system comprising a light-emitting device, the light-emitting device comprising a multiple layer of push-over material, including a light-generating area and a first layer, the first layer being supported by the light-generating area 'through the Under the design of one surface of the first layer, the light generated by the light generating area can be emitted from the light-emitting device through the surface of the first layer, and the surface has a dielectric function, and the dielectric function is Make a spatial change according to a pattern; and a phosphorous material designed to make the light generated by the light-generating area small enough to allow white light to extend in any direction. In the bean, the height of the light device and its area The ratio is small enough to allow white to extend in any direction, φ, and too w. When the light-emitting area is designed, the design of the light-emitting device & A # I * gas line can pass through the first layer When the 21i device emits, the light may be emitted from the light-emitting system: The light-emitting system includes a light-emitting device, and the light-emitting device may emit light from the above-mentioned value. 5 sides Ο bag 1057-6267-PF (N2) .ptd Scope of patent application on page 76 The first layer is composed of 2 bar, including the light-generating area and the first layer. Under the design of the surface, it will be carried by the fork, and it will pass through the edge layer. ; The light generated in the second generation area can be emitted from the luminous dress through the silk surface of the first one; In essence, the ::: 1] includes-material, 1 Xuandi-the material of the sheet can actually let The light emanates from the luminous clothes; and the first device includes a phosphorus material, the second sheet is adjacent to the% sheet, and the device is covered by a packaging method, the first sheet, the second book A wound of 1 ρ α encapsulates a part of the package, which constitutes the light-emitting device and is used in the design of the light-emitting device τ, and when emitted from the light-emitting device = can pass through the first layer of the ΐ Face 24-^,. J 6 Hai light can be emitted from the lighting system. Including:% 糸, first 'including a light-emitting device, the light-emitting device includes a bacterium and a layer of material, including-a light-generating region and-a-layer, § The first layer is supported by the light-generating region, where' Under the design of the surface of the first layer of the factory, the front line generated by the photonic & domain can be emitted through the self-emitting device; The dielectric function is spatially changed according to a pattern; under the design of the pattern, the light distribution of 'light generated from the light-generating region and emitted from the light-emitting device through the surface of the first layer is Laplace distribution more parallel than light; and l〇57-6267-PF (N2) .ptd Page 77 200428682 Patent application scope Under the design of the light emitting device, when the light generated in the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system And issued. Enclose 2 5. A light-emitting system, including a light-emitting device, the light-emitting device package-a layer of multiple push material, including a light-generating area and a first layer, the first layer is supported by the light-generating area, Therefore, during the use of the light-emitting jujube, the light generated by the light-generating area can be emitted from the light-emitting device through the surface of the first layer, wherein the surface of the first layer has a dielectric function. The dielectric letter disc is spatially changed according to a pattern, and at least about 45% of the total light intensity generated by the light generation is emitted through the surface of the light emitting f-domain; and, Under the design of the Haiguang Project, when the light generated by the light generating area can pass through the surface of the first layer and exit from the light source, the light can be emitted from the lighting system. The installation includes: 26 · —a kind of light-emitting system including: a light-emitting device, the light-emitting device includes a: f ί a layer of material 'including a light-generating area and-during the use of the exhibition, by the light Yanfeng f : 支 ί @And on the surface of the luminous clothes-layer and from the luminous Pei's place: Born J: The line can be read by the first public love the edge, the length of the edge is at least about and in Wen Under the design of the first device, the extraction efficiency of the patent application scope of the 2004 20042682 is essentially independent of the length of the edge; and the design of the light-emitting device that produces odor, when the light generation area is = ^ The front line can be emitted from the light emitting device through the surface of the first layer and can be emitted from the light emitting system. A light-emitting system including a light-emitting device including: a summer bag, two pounds, and a multiple layer of stacked materials, including a light generating area and a first chip; the first layer is generated by the light It is supported by the area, so the light generated by the light-generating area during the use of the light-emitting device can be emitted from the light-emitting device through the surface of 誃 = one layer, wherein the light-emitting device has an edge The length of the edge is at least 1 mm, and under the design of the light-emitting device, the extraction efficiency is substantially independent of the length of the edge; with 1 ~ under the design of the light-emitting device, When the light generated by the light generating area can pass through the surface of the first layer and exit the light emitting hall, the light can be emitted from the light emitting system and the DX light emitting system includes a light emitting device and the light emitting device. A multi-ply material layer is included, including a light generating area and a first chip. The first layer is supported by the light generating area. Therefore, the light generating area is used by the light generating area during the use of the light emitting device. The generated light can be emitted from the light emitting device through the surface of the first layer, wherein the light emitting device has an edge, and the length of the edge is at least 1 mm, and under the design of the light emitting device, The lighting device ~ 1057-6267-PF (N2) .ptd Page 79 200428682 6. The extraction efficiency of the patent application scope is essentially independent of the length of the edge 'and under the design of the light-emitting device' When light can be emitted from the light-emitting device through the surface of the first layer, the light can be emitted from the light-emitting system. 2 9. The light-emitting system according to item 1 of the scope of patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated by the light-generating area, The wavelength of light that can be emitted from the light emitting device through the surface of the first layer. 30. The light-emitting system according to item 16 of the scope of the patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated by the light generating area, And the wavelength of the light emitted from the light emitting device through the surface of the first layer. 31. The light-emitting system according to item 17 in the scope of the patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated through the light generating area, and The wavelength of light that can be emitted from the light emitting device through the surface of the first layer. 32. The light-emitting system according to item 18 of the scope of the patent application, wherein the surface of the n-doped material layer has a feature of a size less than about λ / 5, and wherein the surface is generated by the light generating region. And a wavelength of light emitted from the light emitting device through the surface of the node layer. Λ brother μ 33 · As described in the patent application scope item 19, the light emitting system, | the surface of the first layer has a characteristic of less than about λ / 5, ^, λ is generated by the light generation area And a wavelength of light emitted from the light emitting device through the first surface. ^ One should 1057-6267-PF (N2) .ptd Page 80 200428682 VI. Application for patent scope 34. If applying for the edge surface λ of the first layer, the light emitting device shall pass from the light-emitting surface 35. If applying for The surface λ of the first layer is from the light emitting device through the light-emitting surface 3 6 · If applying for the surface of the first layer λ is from the light emitting device through the light-emitting surface 3 7. If applied The surface λ of the first layer is made from the light emitting device through the light-emitting surface. 38. The surface λ of the first layer is made from the light emitting device 39 through the light-emitting surface. The surface A of the first layer is the area of interest of the light emitting area generated by the light emitting area from the light-emitting area No. 20 through the light-emitting surface area No. 21 The benefit range of the light with the size of the niche area and the emission of the item No. 22 is the range of benefit with the size of the niche area and the emission of the light. Set the scope of the rays of light emitted by item 2 4 The benefit range of the light system with the size of the niche area and the emission of light. Item 25 refers to the characteristics of the light system with the size of the niche area and the emission of light. The characteristics of the light system are determined by the characteristics of the light system. The feature is the feature of the first light system, the feature of the first light system, among which, the feature of the light system of the first layer, the feature of, wherein, the feature of the first layer 1057-6267-PF (N2) .ptd Page 81 200428682 VI. Patent application scope 40. The light-emitting system described in item 26 of the patent application scope, wherein the surface of the first layer has a size less than about A feature of λ / 5, wherein λ is a wavelength of light generated from the light-emitting device through the surface of the first layer and passing through the surface of the first layer. 41. The light-emitting system according to item 27 of the scope of the patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated through the light generating area, and The wavelength of light that can be emitted from the light emitting device through the surface of the first layer. 1057-6267-PF (N2) .ptd Page 82