KR20100004569A - Organic electro-luminescent device - Google Patents

Abstract

PURPOSE: An organic electro-luminescent device is provided to obtain uniform brightness and image by reducing the resistance of a first electrode through a connection pattern. CONSTITUTION: A first and a second substrate are face with each other. A driving thin-film transistor is formed on a single-side of the first substrate. A connection electrode(130) is formed on the first in order to be connected to a driving thin-film transistor. The first electrode(141) is formed on the single-side of the second substrate. A connection pattern(200) is formed on the first electrode. A buffer layer(151) is formed on the connection pattern. A barrier rip(153) is formed in the boundary of a pixel region. An organic light-emitting layer(143) and a second electrode(145) are formed on the whole surface of the second substrate including the buffer layer.

Description

Organic electroluminescent device

The present invention relates to an organic electroluminescent device, and in particular, a pixel driving unit (array element layer including a thin film transistor) and a light emitting unit (organic electroluminescent diode element including a light emitting layer) are formed on different substrates. In addition, the two devices are related to an organic electroluminescent device (Active-Matrix Organic Electro-luminescent Device) and a method of manufacturing the same connected via a separate electrical connection pattern.

Until recently, cathode ray tubes (CRT) have been mainly used as display devices. However, in recent years, flat panel such as plasma display panel (PDP), liquid crystal display device (LCD), organic electro-luminescent device (OLED), which can replace CRT, Display devices are widely researched and used.

Among the flat panel display devices described above, the organic light emitting display device (hereinafter referred to as OLED) is a self-light emitting device, and since the backlight used in the liquid crystal display device, which is a non-light emitting device, is possible to be light and thin.

In addition, the viewing angle and contrast ratio are superior to the liquid crystal display device, and it is advantageous in terms of power consumption. It is also possible to drive DC low voltage, has a fast response speed, and the internal components are solid, so it is strong against external shock and has a wide temperature range. It has advantages

In particular, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than the conventional liquid crystal display device.

OLEDs having these characteristics are largely divided into a passive matrix type and an active matrix type. The passive matrix type forms a device in a matrix form while crossing signal lines, whereas an active matrix type is a pixel. A thin film transistor, which is a switching element that turns on / off, is positioned for each pixel.

In recent years, the passive matrix type has many limited elements such as resolution, power consumption, and lifespan. Accordingly, active matrix type OLEDs capable of realizing high resolution and large screens have been actively studied.

1 is a view schematically showing a cross section of a general active matrix OLED.

As shown, the OLED 10 is composed of a first substrate 1 and a second substrate 2 facing the first substrate 1, and the first and second substrates 1, 2 are connected to each other. It is spaced apart and the edge thereof is encapsulated and sealed through a fail pattern 20.

In detail, the driving thin film transistor DTr is formed in each pixel area on the first substrate 1, and the first electrode 3 and the first electrode connected to each driving thin film transistor DTr are formed. The organic light emitting layer 5 which emits light of a specific color on the upper part of (3) and the second electrode 7 are formed on the organic light emitting layer 5.

The organic light emitting layer 5 expresses colors of red, green, and blue. In general, separate organic materials 5a, 5b, and 5c emitting red, green, and blue colors are used for each pixel.

The first and second electrodes 3 and 7 and the organic light emitting layer 5 formed therebetween form an organic light emitting diode. In this case, the OLED 10 having such a structure configures the first electrode 3 as an anode and the second electrode 7 as a cathode.

On the other hand, a moisture absorbent 13 is formed on the inner surface of the second substrate 2 to block external moisture.

The OLED 10 is divided into a top emission type and a bottom emission type according to the transmission direction of light emitted through the organic light emitting layer 5, and the bottom emission method has stability and a process. While there is a high degree of freedom and limited aperture ratio, there is a problem that it is difficult to apply to high resolution products.

Therefore, in recent years, research into the top emission method having high opening ratio and high resolution has been actively conducted, but the top emission method has a narrow selection of materials as a cathode is usually positioned on the organic light emitting layer 5, and thus transmittance is high. There is a problem in that the light efficiency is lowered.

In particular, the OLED 10 simultaneously forms an organic light emitting diode composed of the first electrode 3, the organic light emitting layer 5, and the second electrode 7 on a substrate on which the driving thin film transistor DTr is formed. As a result, if a defect occurs in either of the array element or the organic light emitting diode, the final finished OLED 10 becomes defective and thus, there is a problem in that the yield is lowered.

Although not shown in the drawings, in recent years, the array element and the organic light emitting diode are formed on separate substrates, and then bonded to the two substrates to be electrically connected to each other through contact spacers, thereby manufacturing each substrate. Dual panel type OLED has been introduced that can independently manage defects generated during the operation.

However, in the dual panel OLED, a crack is generated in the second electrode of the organic light emitting diode by a contact spacer made of an organic material such as a photoresist when pressure such as pressing from the outside is applied.

This causes problems such as dark spot defects, which in turn causes uneven brightness and image characteristics.

In addition, the photoresist used as the contact spacer emits gas to the outside as the temperature is heated or stored for a long time. When these gases are present inside the sealed OLED, the characteristics of the organic light emitting diode are modified. . For this reason, there is a problem of shortening the life of the device.

The present invention has been made to solve the above problems, and a first object of the present invention is to prevent cracking of the second electrode of the organic light emitting diode.

Through this, it is a second object to improve the brightness and image characteristics.

In order to achieve the object as described above, the present invention comprises a first and second substrate facing each other; A driving thin film transistor star formed on one surface of the first substrate facing the second substrate; A connection electrode formed on the first substrate and connected to the driving thin film transistor; A first electrode formed on one surface of the second substrate facing the first substrate; A connection pattern formed on an upper portion of the first electrode and formed at a boundary portion of each pixel region that is a minimum unit region for implementing a screen, and formed of a metal material; A buffer layer formed on the connection pattern; Barrier ribs each having a predetermined thickness at a boundary of each pixel region, which is one side of the buffer layer; An organic light emitting layer and a second electrode sequentially formed on the front surface of the second substrate including the buffer layer in the pixel area separated by the partition wall, and the second electrode formed at an end of the connection pattern includes An organic light emitting display device is characterized in that it is in contact with a connecting electrode.

The connection pattern may be selected from metal materials such as molybdenum (Mo), titanium (Ti), and silver-indium-tin-oxide (Ag-ITO) materials having a lower specific resistance than the first electrode. The connection pattern may have a pillar shape in which a bottom surface close to the first electrode is wider and a width thereof narrows upward.

In addition, the present invention comprises the steps of forming a first electrode on a substrate in which the pixel region is defined; Depositing a metal material layer on the first electrode, and then patterning the metal material layer to form a connection pattern; Forming a buffer layer on the connection pattern; Forming a barrier rib having a predetermined thickness on one side of the buffer layer; And depositing an organic light emitting material and a second electrode material in order on the substrate including the buffer layer and the partition wall, and sequentially forming the organic light emitting layer and the second electrode in a structure separated by the partition wall. Provided is a method of manufacturing a substrate for a light emitting device.

In this case, the connection pattern is formed so that the bottom surface close to the first electrode becomes wider and taper as the upper side becomes narrower through the isotropic dry etching or the spray type wet etching in the patterning step. The material is selected from a conductive material having a light transmissive characteristic, characterized in that it is driven in a top emission method.

As described above, according to the present invention by forming a connection pattern for electrically connecting the two substrates with an inorganic material such as molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material Since the connection pattern is not pressed even when a pressure such as pressing from the outside is applied, there is an effect that a defect in which the second electrode formed on the connection pattern is destroyed is not generated.

In addition, since the connection pattern serves as an auxiliary electrode of the first electrode, the voltage drop of the organic light emitting diode can be prevented by lowering the resistance value of the first electrode through the connection pattern. As a result, a uniform signal can be applied to all the pixel regions, thereby making it possible to make the overall luminance and image characteristics of the OLED uniform.

In addition, by using a contact spacer made of a conventional photoresist, there is an effect that can prevent the problem that the life of the organic light emitting diode is changed by the gas (gas) generated from the photoresist is changed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a cross-sectional view of one pixel including a driving thin film transistor and an organic light emitting diode as a part of a top emitting OLED according to an exemplary embodiment of the present invention.

At this time, for convenience of explanation, the region in which the driving thin film transistor DTr is formed is the driving region DA and the region in which the connection pattern is formed is lighted up in the non-pixel region NP and the region in which the organic light emitting diode E is formed. This is defined as the area PA. Although not shown in the drawing, an area in which the switching thin film transistor is formed is defined as a switching area.

As illustrated, the OLED 100 includes a first substrate 101 on which a driving thin film transistor DTr and a switching thin film transistor (not shown) are formed, and a second substrate 102 on which an organic light emitting diode E is formed. Facing and facing.

Here, the gate line and the data line 115 intersect with each other and define the pixel area P on the first substrate 101.

In addition, a switching thin film transistor (not shown), which is a switching element, is formed at an intersection point between the two wires (not shown), and the gate electrode 103 and the gate insulating film electrically connected to the switching thin film transistor (not shown). A driving thin film transistor DTr having a 106, a semiconductor layer 110, and source and drain electrodes 117 and 119 is formed.

In this case, the semiconductor layer 110 is composed of an active layer 110a of pure amorphous silicon and an ohmic contact layer 110b of amorphous silicon including impurities. In this case, a switching and driving thin film transistor (not shown, DTr) is illustrated. Shows a bottom gate type consisting of amorphous silicon of pure and impurity (110a, 110b) as an example, may be formed as a top gate type including a polysilicon semiconductor layer as a variant thereof have.

A protective layer 120 having a drain contact hole 125 exposing the drain electrode 119 of the driving thin film transistor DTr is formed on the switching and driving thin film transistor DTr.

Next, a connection electrode 130 contacting the drain electrode 119 through the drain contact hole 125 is formed in each pixel region P on the passivation layer 120.

On the other hand, the first electrode 141 forming an anode as one component constituting the organic light emitting diode E on the front surface of the second substrate 102 facing and facing the first substrate 101. Is formed.

The first electrode 141 may be made of indium tin oxide (ITO), which is a material having a relatively high work function.

The first substrate 101 is provided for each pixel region P to supply current to the organic light emitting diode E above the first electrode 141 facing the first substrate 101 of the non-pixel region NP. A pillar-shaped connection pattern 200 is formed at a position at which the driving thin film transistor DTr formed on the substrate is connected.

The present invention is characterized in that the connection pattern 200 serves as a contact spacer that electrically connects the existing first substrate 101 and the second substrate 102 together with the role of the auxiliary electrode. We will discuss this in more detail later.

The buffer layer 151 is formed on the connection pattern 200, and one side of the buffer layer 151 is formed with a partition 153 having a predetermined thickness at a position surrounding a boundary portion of each pixel region P. Referring to FIG.

The organic light emitting layer 143 and the second electrode 145 are sequentially formed on the buffer layer 151 and the first electrode 141.

The first and second electrodes 141 and 145 and the organic light emitting layer 143 formed therebetween form an organic light emitting diode (E).

In this case, since the organic light emitting diode E forms the first electrode 141 with a conductive material having a light transmittance such as indium tin oxide (ITO), the light emitted from the organic light emitting layer 143 is the first electrode. It is driven by the top emission method emitting through 141.

The organic light emitting layer 143 and the second electrode 145 have a structure separated by each of the pixel regions P by the partition wall 153, and the organic light emitting layer 143 has red (R) for each pixel region P, It is a material emitting green (G) and blue (B) colors and consists of red, green, and blue light emitting patterns.

Here, the organic light emitting layer 143 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

In addition, the second electrode 145 is made of aluminum (Al) or aluminum alloy (AlNd), which is a metal material having a relatively low work function in order to serve as a cathode.

The second electrode 145 formed corresponding to the end of the connection pattern 200 is in contact with the connection electrode 130 on the first substrate 101.

That is, the connection pattern 200 of the present invention is primarily intended to electrically connect the two substrates 101 and 102 rather than the cell gap holding function, and has a predetermined height in a column shape in a section between the two substrates 101 and 102. .

Here, the connection portion between the connection pattern 200 and the driving thin film transistor DTr will be described in more detail. The connection electrode 130 is connected to the drain electrode 119 of the driving thin film transistor DTr on the first substrate 101. ) And the second electrode 145 formed to cover the connection pattern 200 are in contact with each other, resulting in driving of the organic light emitting diode E formed on the second substrate 102 and the first substrate 101. The thin film transistor DTr is electrically connected to the thin film transistor DTr.

In particular, the connection pattern 200 is formed of a metal material, such as molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material, even if a pressure such as pressing from the outside through this Since the pressing of the OLED 100 does not occur, a crack of the second electrode 145 formed on the connection pattern 200 may be prevented.

The OLED 100 according to the embodiment of the present invention described above includes a first substrate 101 having a switching and driving thin film transistor (DTr) and a second substrate 102 having an organic light emitting diode (E). After separately forming, the two substrates 101 and 102 are bonded together to complete the OLED 100.

When a predetermined voltage is applied to the first electrode 141 and the second electrode 145 according to the selected color signal, the OLED 100 may be formed from holes and second electrodes 145 injected from the first electrode 141. The applied electrons are transported to the organic light emitting layer 143 to form excitons, and when the excitons transition from the excited state to the ground state, light is generated and emitted in the form of visible light.

At this time, since the emitted light passes through the transparent first electrode 141 to the outside, the OLED 100 implements an arbitrary image.

In this process, the connection pattern 200 serving as an auxiliary electrode is formed of molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material having a lower specific resistance than the first electrode 141. By lowering the resistance value of the first electrode 141 it is possible to prevent the voltage drop of the organic light emitting diode (E).

As a result, the luminance and image characteristics can be made uniform.

3 is a cross-sectional view schematically showing the structure of a connection pattern according to an embodiment of the present invention.

As illustrated, a first electrode 141 is formed on the front surface of the second substrate 102, and a column-shaped connection pattern having a predetermined thickness is formed in the non-pixel region NP of the second substrate 102. 200) is formed.

In addition, a buffer layer 151 is formed on the connection pattern 200, and a partition wall 153 having a predetermined thickness is formed at a portion of one side of the buffer layer 151 that surrounds the boundary of each pixel region P. .

The organic light emitting layer 143 and the second electrode 145 are sequentially formed on the buffer layer 151 while exposing a portion of one side of the buffer layer 151.

In this case, the buffer layer 151 is formed in a structure surrounding the top and both sides of the connection pattern 200, through which the connection pattern 200, which serves as an auxiliary electrode of the first electrode 141, on the buffer layer 151 By preventing the organic light emitting layer 143 or the second electrode 145 from being electrically contacted with each other, the connection pattern 200 and the organic light emitting layer 143 or the second electrode 145 are prevented from interfering with each other.

Here, the buffer layer 151 is used as a means for preventing a short circuit between the first and second electrodes 141 and 145, and the partition wall 153 removes some light having straightness from the light emitted from the organic light emitting layer 143. It serves to guide toward the first substrate (101 in FIG. 2).

Therefore, some of the light having the straightness emitted from the organic light emitting layer 143 is reflected by the first substrate 101 to improve the brightness of the light.

In this case, since the organic light emitting layer 143 and the second electrode 145 are formed in a structure that is automatically separated for each pixel region P by the partition wall 153 without a separate mask process, the organic light emission layer is formed on the upper part of the partition wall 153. The material layer 143a and the second electrode material layer 145a may be left in order.

On the other hand, the connection pattern 200 is formed in a shape that the bottom surface close to the first electrode 141 is wider and narrower toward the top, the second electrode 145 formed on the second substrate 102 is the connection pattern 200 ) Makes electrical contact with the connection electrode (130 of FIG. 2) formed on the first substrate (101 of FIG. 2).

Thus, the connection pattern 200 of the present invention serves as a conventional contact spacer.

In particular, the connection pattern 200 of the present invention is made of a metal material such as molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material, which has a lower specific resistance than the first electrode 141. Form.

Accordingly, the connection pattern 200 of the present invention has a characteristic of having a high hardness and a very low ductility compared to a contact spacer made of a conventional photoresist material.

Therefore, since the connection pattern 200 is not pressed even when a pressure such as pressing from the outside is applied, this can prevent the OLED (100 in FIG. 2) from being pressed. As a result, a failure in which the second electrode 145 formed on the connection pattern 200 is destroyed may not occur.

In addition, the connection pattern 200 is formed of a metal material such as molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material, which has a lower specific resistance than the first electrode 141, The connection pattern 200 serves as an auxiliary electrode of the first electrode 141.

That is, by forming the connection pattern 200 on the first electrode 141, the first electrode 141 and the connection pattern 200 are electrically connected to each other, the first electrode (through the connection pattern 200) By lowering the resistance value of 141, it is possible to prevent the voltage drop of the organic light emitting diode (E of FIG. 2).

As a result, a uniform signal can be applied to all the pixel regions P, thereby making it possible to uniformize the overall brightness and image characteristics of the OLED (100 in FIG. 2).

In addition, by using a contact spacer made of a conventional photoresist, it is possible to prevent the problem that the life of the organic light emitting diode is changed by the gas generated from the photoresist is changed.

In this case, the connection pattern 200 is preferably selected from the first electrode 141 made of ITO and a metal material that does not generate galvanic corrosion, and aluminum (Al) -based metal material is preferably excluded. .

In addition, the connection pattern 200 is formed by widening the bottom surface of the connection pattern 200 in contact with the first electrode 141 within the limit that does not affect the opening ratio of the light emitting area (PA of FIG. 2). By increasing the area in contact with the first electrode 141, a more uniform signal can be applied to the first electrode 141.

Hereinafter, a method of manufacturing an OLED (100 of FIG. 2) according to an embodiment of the present invention will be described. Here, the OLED (100 of FIG. 2) according to the present invention has a structural feature on the second substrate 102 (hereinafter, referred to as an organic electroluminescent diode substrate) on which the organic light emitting diode (E of FIG. 2) is formed. Only a manufacturing method of the substrate 102 will be described.

4A to 4G are cross-sectional views of manufacturing an organic light emitting diode substrate according to an embodiment of the present invention.

First, as shown in FIG. 4A, the first electrode 141 is formed on the substrate 102. The first electrode 141 is selected from a light-transmitting conductive material. For example, the first electrode 141 may be formed. In the case of an anode, it may be made of indium-tin-oxide (ITO), which is light-transmitting and has a relatively high work function.

Next, as shown in FIG. 4B, a metal such as molybdenum (Mo), titanium (Ti), and silver-indium-tin-oxide (Ag-ITO) material is formed on the substrate 102 on which the first electrode 141 is formed. The metal material layer 210 is formed by depositing one material selected from materials.

At this time, the thickness of the metal material layer 210 is formed to have a thickness corresponding to the height of the connection pattern to be formed.

Next, as shown in FIG. 4C, after depositing the metal material layer 210 on the substrate 102, photoresist coating, exposure through a mask, development of the exposed photoresist, and remaining photoresist after development The connection pattern 200 is formed by performing a series of processes called etching through the etching of the metal material layer 210 exposed to the outside and a mask process such as ashing or stripping of the remaining photoresist. .

In this case, the connection pattern 200 may be under-etched to allow the material layer to be etched to remain on the substrate without being etched away during the etching process, or isotropic dry etching or spray-type wet etching. Through etching, the bottom surface close to the first electrode 141 is formed to be tapered wider and narrower toward the top.

Next, as shown in FIG. 4D, the inorganic insulating material is deposited on the connection pattern 200 and then patterned to form the buffer layer 151. The buffer layer 151 forms the upper and both sides of the connection pattern 200. Form to cover all.

Next, as shown in FIG. 4E, a photoacryl or benzocyclobutene (BCB), which is a photosensitive organic insulating material different from the material forming the buffer layer 151, is coated on the buffer layer 151 and patterned. As a result, when the substrate 102 is cut perpendicularly to the substrate 102, a partition wall 153 having an inverted trapezoidal shape in which the cross-sectional structure of the cross-sectional structure contacts the buffer layer 151 is narrower and wider toward an upper portion thereof.

Next, as shown in FIG. 4F, the organic light emitting layer 143 is formed by coating or depositing an organic light emitting material on the buffer layer 151 in the state where the partition wall 153 is formed.

In this case, the organic light emitting material may be coated or sprayed using a nozzle coating device, a dispensing device, or an inkjet device to form an organic light emitting layer 143 for each pixel area P, and may be formed by using a shadow mask. The organic light emitting layer 143 may be formed for each pixel region P by thermally depositing an organic light emitting material.

Next, as illustrated in FIG. 4G, each pixel is automatically formed by the partition wall 153 by depositing aluminum (Al) or aluminum alloy (AlNd), which is a metal material having a relatively small work function value, on the organic light emitting layer 143. The second electrode 145 in a separated form is formed for each region P. Referring to FIG.

Thus, the organic light emitting diode substrate according to the present invention is completed.

Subsequently, although not shown in the drawings, a seal pattern is formed along an edge of one of the organic light emitting diode substrate completed through the above-described process and the first substrate including the switching and driving thin film transistor completed through the general process. do.

Next, after the two substrates face each other, the second electrode 145 and the connection electrode (130 of FIG. 2) formed on the connection pattern 200 are brought into contact with each other in a vacuum or inert gas nitrogen atmosphere. This completes the top emission type OLED (100 in FIG. 2).

At this time, a moisture absorbent (not shown) is formed inside the failure turn (not shown), and the moisture absorbent (not shown) is provided to block external moisture, which is exposed when the organic light emitting layer 143 is exposed to oxygen and moisture. This is to prevent this because of the easily deteriorated characteristics.

As described above, the bottom surface close to the first electrode 141 is made of a metal material such as molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material, and the width becomes narrower upward. The connection pattern 200 having a columnar shape is configured, and the second electrode 145 formed on the second substrate 102 through the connection pattern 200 thereof is connected to the connection electrode formed on the first substrate 101 of FIG. 2. By making electrical contact with (130 of FIG. 2), the connection pattern 200 is not pressed even when a pressure such as pressing is applied from the outside, which can prevent the OLED (100 of FIG. 2) from being pressed.

As a result, a failure in which the second electrode 145 formed on the connection pattern 200 is destroyed may not occur.

In particular, the connection pattern 200 is formed of a metal material such as molybdenum (Mo), titanium (Ti), silver-indium-tin-oxide (Ag-ITO) material, which has a lower specific resistance than the first electrode 141, By making the connection pattern 200 serve as an auxiliary electrode of the first electrode 141, the resistance value of the first electrode 141 is lowered through the connection pattern 200 to reduce the voltage of the organic light emitting diode (E in FIG. 2). The descent can be prevented.

As a result, a uniform signal can be applied to all the pixel regions (P in FIG. 2), thereby making it possible to make the overall luminance and image characteristics of the OLED (100 in FIG. 2) uniform.

In addition, by using a contact spacer made of a conventional photoresist, it is possible to prevent the problem that the lifespan of the organic light emitting diode (E of FIG. 2) is changed by the gas generated from the photoresist and the life is shortened. .

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

1 is a schematic cross-sectional view of a typical active matrix OLED.

2 is a cross-sectional view showing a portion of a top-emitting OLED according to an embodiment of the present invention.

3 is a cross-sectional view schematically showing the structure of a connection pattern according to an embodiment of the present invention.

4A to 4G are cross-sectional views of manufacturing an organic light emitting diode substrate according to an embodiment of the present invention.

Claims (6)

First and second substrates facing each other; A driving thin film transistor star formed on one surface of the first substrate facing the second substrate; A connection electrode formed on the first substrate and connected to the driving thin film transistor; A first electrode formed on one surface of the second substrate facing the first substrate; A connection pattern formed on an upper portion of the first electrode and formed at a boundary portion of each pixel region that is a minimum unit region for implementing a screen, and formed of a metal material; A buffer layer formed on the connection pattern; Barrier ribs each having a predetermined thickness at a boundary of each pixel region, which is one side of the buffer layer; The organic light emitting layer and the second electrode sequentially formed on the front surface of the second substrate including the buffer layer in a structure separated by the pixel region by the partition wall. And the second electrode formed at the end of the connection pattern is in contact with the connection electrode. The method of claim 1, The connection pattern may be selected from metal materials such as molybdenum (Mo), titanium (Ti), and silver-indium-tin-oxide (Ag-ITO) materials having a lower specific resistance than the first electrode. Organic electroluminescent device. The method of claim 1, The connection pattern is an organic light emitting display device, characterized in that the bottom surface is close to the first electrode is wider and the column shape narrower toward the top. Forming a first electrode on the substrate on which the pixel region is defined; Depositing a metal material layer on the first electrode, and then patterning the metal material layer to form a connection pattern; Forming a buffer layer on the connection pattern; Forming a barrier rib having a predetermined thickness on one side of the buffer layer; Sequentially depositing an organic light emitting material and a second electrode material on the substrate including the buffer layer and the partition wall, and sequentially forming the organic light emitting layer and the second electrode in a structure separated by the partition wall. Method for producing a substrate for an organic light emitting device comprising a. The method of claim 4, wherein The connection pattern is a method of manufacturing a substrate for an organic light emitting device, characterized in that in the step of patterning through the isotropic dry etching or spray-type wet etching is formed so that the bottom surface close to the first electrode is tapered wider and narrower upwards. . The method of claim 4, wherein The material constituting the first electrode is selected from a conductive material having a light transmitting property, and the method of manufacturing a substrate for an organic light emitting display device, characterized in that it is driven in a top light emitting method.

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