KR20090130527A - 반도체 발광소자 - Google Patents
반도체 발광소자 Download PDFInfo
- Publication number
- KR20090130527A KR20090130527A KR1020080056210A KR20080056210A KR20090130527A KR 20090130527 A KR20090130527 A KR 20090130527A KR 1020080056210 A KR1020080056210 A KR 1020080056210A KR 20080056210 A KR20080056210 A KR 20080056210A KR 20090130527 A KR20090130527 A KR 20090130527A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- reflection
- pad
- light emitting
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 148
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
- 제 1도전성 반도체층;상기 제1도전성 반도체층 위에 형성된 활성층;상기 활성층 위에 형성된 제2도전성 반도체층; 및상기 제1도전성 반도체층 위에 형성되며, 양측에 반사층이 형성된 제1반사 패드를 포함하는 반도체 발광소자.
- 제1항에 있어서,상기 제2도전성 반도체층 위에 형성되며, 양측에 반사층이 형성된 제1반사패드를 포함하는 반도체 발광소자.
- 제 2항에 있어서,상기 제1반사패드 및 제2반사패드는 동일 층의 구조로 형성되는 반도체 발광소자.
- 제 2항에 있어서,상기 제1반사패드는 상기 제1도전성 반도체층에 형성된 제1접착층; 상기 제1접착층 위에 형성된 제1반사층; 상기 제1반사층 위에 형성된 제1베리어 금속층; 상기 제1베리어 금속층 위에 형성된 제2반사층을 포함하며,상기 제2반사패드는 상기 제2도전성 반도체층에 형성된 제2접착층; 상기 제2접착층 위에 형성된 제3반사층; 상기 제3반사층 위에 형성된 제2베리어 금속층; 상기 제2베리어 금속층 위에 형성된 제4반사층을 포함하는 반도체 발광소자.
- 제 4항에 있어서,상기 제1접착층 및 제2접착층은 Cr, Ti, APC(Ag+Pd+Cu) 합금, Cr-금속의 합금, Ti-금속의 합금 중 적어도 하나를 포함하며,상기 Cr과 합금되는 금속은 Fe, Tu, Mo, Al, Ag 중 적어도 하나를 포함하며, 상기 Ti와 합금되는 금속은 Fe, Tu, Mo, Al, Ag 중 적어도 하나를 포함하는 반도체 발광소자.
- 제 4항 또는 제5항에 있어서,상기 제1접착층 및 제2접착층은 1~60000Å의 두께로 형성되는 반도체 발광소자.
- 제 4항에 있어서,상기 제1내지 제4반사층은 Al, Ag, APC(Ag+Pd+Cu) 합금, Al-금속의 합금, Ag-금속의 합금 중 적어도 하나를 포함하며,상기 Al과 합금되는 금속은 Cr, Fe, Mo, Tu 중 적어도 하나를 포함하며,상기 Ag와 합금되는 금속은 Cr, Fe, Mo, Tu 중 적어도 하나를 포함하는 반도 체 발광소자.
- 제 2항에 있어서,상기 제 1도전성 반도체층의 아래에 형성된 언도프드 반도체층, 버퍼층, 기판 중 적어도 하나를 포함하는 반도체 발광소자.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080056210A KR100986518B1 (ko) | 2008-06-16 | 2008-06-16 | 반도체 발광소자 |
CN2009801213820A CN102217104A (zh) | 2008-06-16 | 2009-06-15 | 半导体发光器件 |
PCT/KR2009/003196 WO2009154383A2 (ko) | 2008-06-16 | 2009-06-15 | 반도체 발광소자 |
US12/997,431 US8373193B2 (en) | 2008-06-16 | 2009-06-15 | Semiconductor for light emitting device |
EP09766808A EP2290711A4 (en) | 2008-06-16 | 2009-06-15 | SEMICONDUCTOR LIGHT EMITTING DEVICE |
US13/759,291 US9257613B2 (en) | 2008-06-16 | 2013-02-05 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080056210A KR100986518B1 (ko) | 2008-06-16 | 2008-06-16 | 반도체 발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090130527A true KR20090130527A (ko) | 2009-12-24 |
KR100986518B1 KR100986518B1 (ko) | 2010-10-07 |
Family
ID=41434542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080056210A KR100986518B1 (ko) | 2008-06-16 | 2008-06-16 | 반도체 발광소자 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8373193B2 (ko) |
EP (1) | EP2290711A4 (ko) |
KR (1) | KR100986518B1 (ko) |
CN (1) | CN102217104A (ko) |
WO (1) | WO2009154383A2 (ko) |
Cited By (4)
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KR20120040855A (ko) * | 2010-10-20 | 2012-04-30 | 엘지이노텍 주식회사 | 발광 소자 |
US8338847B2 (en) | 2010-04-23 | 2012-12-25 | Lg Innotek Co., Ltd. | Light emitting device, method of manufacturing the same, light emitting device package and lighting system |
KR101294246B1 (ko) * | 2012-06-22 | 2013-08-07 | 고려대학교 산학협력단 | 중간층을 이용한 반사막을 포함하는 발광 다이오드 제조 방법, 및 상기 방법으로 제조한 발광 다이오드 |
KR101448842B1 (ko) * | 2013-06-19 | 2014-10-13 | 엘지이노텍 주식회사 | 발광 다이오드 |
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KR101081135B1 (ko) | 2010-03-15 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101054984B1 (ko) * | 2010-03-26 | 2011-08-05 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101047792B1 (ko) * | 2010-04-23 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
JP5652373B2 (ja) * | 2011-03-24 | 2015-01-14 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
KR20120119395A (ko) * | 2011-04-21 | 2012-10-31 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
US20140197374A1 (en) * | 2011-08-17 | 2014-07-17 | Samsung Electronics Co., Ltd. | Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby |
KR101832165B1 (ko) * | 2011-11-15 | 2018-02-26 | 엘지이노텍 주식회사 | 발광소자 |
KR101872735B1 (ko) * | 2011-11-15 | 2018-08-02 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR101205536B1 (ko) | 2011-11-22 | 2012-11-27 | 일진머티리얼즈 주식회사 | 발광 다이오드의 제조 방법 |
US9306124B2 (en) * | 2012-05-17 | 2016-04-05 | Epistar Corporation | Light emitting device with reflective electrode |
CN102856459B (zh) * | 2012-09-06 | 2015-09-16 | 安徽三安光电有限公司 | 发光二极管反射电极的钝化方法 |
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CN106159057B (zh) * | 2015-04-01 | 2018-08-28 | 映瑞光电科技(上海)有限公司 | Led芯片及其制作方法 |
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KR100895452B1 (ko) * | 2004-07-29 | 2009-05-07 | 쇼와 덴코 가부시키가이샤 | 반도체 발광소자용 양전극 |
WO2006011672A1 (en) | 2004-07-29 | 2006-02-02 | Showa Denko K.K. | Positive electrode for semiconductor light-emitting device |
TWI257714B (en) * | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
JP2008041866A (ja) * | 2006-08-04 | 2008-02-21 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
KR100675208B1 (ko) * | 2006-10-26 | 2007-01-29 | 삼성전기주식회사 | 고휘도 질화물계 반도체 발광소자 |
KR100910964B1 (ko) | 2007-08-09 | 2009-08-05 | 포항공과대학교 산학협력단 | 오믹 전극 및 이의 형성 방법 |
US20110018022A1 (en) | 2008-03-13 | 2011-01-27 | Okabe Takehiko | Semiconductor light-emitting device and method for manufacturing the same |
-
2008
- 2008-06-16 KR KR1020080056210A patent/KR100986518B1/ko active IP Right Grant
-
2009
- 2009-06-15 WO PCT/KR2009/003196 patent/WO2009154383A2/ko active Application Filing
- 2009-06-15 CN CN2009801213820A patent/CN102217104A/zh active Pending
- 2009-06-15 EP EP09766808A patent/EP2290711A4/en not_active Withdrawn
- 2009-06-15 US US12/997,431 patent/US8373193B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8338847B2 (en) | 2010-04-23 | 2012-12-25 | Lg Innotek Co., Ltd. | Light emitting device, method of manufacturing the same, light emitting device package and lighting system |
KR20120040855A (ko) * | 2010-10-20 | 2012-04-30 | 엘지이노텍 주식회사 | 발광 소자 |
KR101294246B1 (ko) * | 2012-06-22 | 2013-08-07 | 고려대학교 산학협력단 | 중간층을 이용한 반사막을 포함하는 발광 다이오드 제조 방법, 및 상기 방법으로 제조한 발광 다이오드 |
KR101448842B1 (ko) * | 2013-06-19 | 2014-10-13 | 엘지이노텍 주식회사 | 발광 다이오드 |
Also Published As
Publication number | Publication date |
---|---|
US20110266573A1 (en) | 2011-11-03 |
EP2290711A2 (en) | 2011-03-02 |
WO2009154383A2 (ko) | 2009-12-23 |
CN102217104A (zh) | 2011-10-12 |
WO2009154383A3 (ko) | 2010-04-22 |
EP2290711A4 (en) | 2011-08-03 |
KR100986518B1 (ko) | 2010-10-07 |
US8373193B2 (en) | 2013-02-12 |
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