KR20090129980A - 이미지 센서, 카메라 및 이미지 센서 동작 방법 - Google Patents

이미지 센서, 카메라 및 이미지 센서 동작 방법 Download PDF

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Publication number
KR20090129980A
KR20090129980A KR1020097001186A KR20097001186A KR20090129980A KR 20090129980 A KR20090129980 A KR 20090129980A KR 1020097001186 A KR1020097001186 A KR 1020097001186A KR 20097001186 A KR20097001186 A KR 20097001186A KR 20090129980 A KR20090129980 A KR 20090129980A
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KR
South Korea
Prior art keywords
charge
gate
gates
ccd
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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KR1020097001186A
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English (en)
Korean (ko)
Inventor
크리스토퍼 파크스
Original Assignee
이스트맨 코닥 캄파니
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Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20090129980A publication Critical patent/KR20090129980A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
KR1020097001186A 2006-07-20 2007-07-09 이미지 센서, 카메라 및 이미지 센서 동작 방법 Withdrawn KR20090129980A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/490,383 2006-07-20
US11/490,383 US7692706B2 (en) 2006-07-20 2006-07-20 Charge summing in multiple output charge-coupled devices in an image sensor

Publications (1)

Publication Number Publication Date
KR20090129980A true KR20090129980A (ko) 2009-12-17

Family

ID=38807415

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001186A Withdrawn KR20090129980A (ko) 2006-07-20 2007-07-09 이미지 센서, 카메라 및 이미지 센서 동작 방법

Country Status (7)

Country Link
US (3) US7692706B2 (enExample)
EP (1) EP2044628A2 (enExample)
JP (1) JP2009545133A (enExample)
KR (1) KR20090129980A (enExample)
CN (1) CN101490846B (enExample)
TW (1) TW200818895A (enExample)
WO (1) WO2008010924A2 (enExample)

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JP2009089029A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp Ｃｃｄ型固体撮像素子
WO2012081154A1 (ja) * 2010-12-16 2012-06-21 パナソニック株式会社 撮像装置及び画像処理装置
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8411189B2 (en) * 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8750060B2 (en) 2012-03-05 2014-06-10 Raytheon Company Repair device and method for integrated circuit structured arrays
US8519879B1 (en) * 2012-04-13 2013-08-27 Raytheon Company Precision charge-dump circuit
EP4192026A1 (en) 2012-04-19 2023-06-07 Raytheon Company Repartitioned digital pixel
US8878256B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US8878255B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US9979905B2 (en) * 2015-11-17 2018-05-22 Microsoft Technology Licensing, Llc. Multimode photosensor
EP3867863A4 (en) * 2018-10-15 2022-07-20 Bio-Rad Laboratories, Inc. SATURATION AVOIDANCE IN DIGITAL IMAGING
JP7159090B2 (ja) * 2019-03-20 2022-10-24 株式会社東芝 固体撮像装置及び固体撮像装置の制御方法

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US4513313A (en) 1982-12-07 1985-04-23 Canon Kabushiki Kaisha Solid state imaging device
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US4879601A (en) 1988-11-14 1989-11-07 Polaroid Corporation System and method of providing images from solid state sensor
US5189498A (en) 1989-11-06 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Charge coupled device
US5528643A (en) 1989-11-13 1996-06-18 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
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CA2052148A1 (en) * 1990-09-27 1992-03-28 Tadashi Sugiki Method of driving a solid-state imaging device
JPH06205298A (ja) * 1992-11-06 1994-07-22 Sharp Corp 電荷結合型固体撮像装置
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Also Published As

Publication number Publication date
CN101490846B (zh) 2011-04-06
WO2008010924A2 (en) 2008-01-24
US8098316B2 (en) 2012-01-17
CN101490846A (zh) 2009-07-22
TW200818895A (en) 2008-04-16
WO2008010924A3 (en) 2008-03-06
US20100157118A1 (en) 2010-06-24
EP2044628A2 (en) 2009-04-08
US20100157119A1 (en) 2010-06-24
US20080018767A1 (en) 2008-01-24
JP2009545133A (ja) 2009-12-17
US7692706B2 (en) 2010-04-06
US8102455B2 (en) 2012-01-24

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PA0105 International application

Patent event date: 20090120

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid