CN101490846B - 多输出电荷耦合器件 - Google Patents

多输出电荷耦合器件 Download PDF

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Publication number
CN101490846B
CN101490846B CN2007800275356A CN200780027535A CN101490846B CN 101490846 B CN101490846 B CN 101490846B CN 2007800275356 A CN2007800275356 A CN 2007800275356A CN 200780027535 A CN200780027535 A CN 200780027535A CN 101490846 B CN101490846 B CN 101490846B
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CN
China
Prior art keywords
charge
gate
ccd
gates
electrically connected
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Expired - Fee Related
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CN2007800275356A
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English (en)
Chinese (zh)
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CN101490846A (zh
Inventor
C·帕克斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chu Saisi Imaging Co ltd
Image Sensing Technology Acquisition Group
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Eastman Kodak Co
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Publication of CN101490846A publication Critical patent/CN101490846A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
CN2007800275356A 2006-07-20 2007-07-09 多输出电荷耦合器件 Expired - Fee Related CN101490846B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/490,383 2006-07-20
US11/490,383 US7692706B2 (en) 2006-07-20 2006-07-20 Charge summing in multiple output charge-coupled devices in an image sensor
PCT/US2007/015641 WO2008010924A2 (en) 2006-07-20 2007-07-09 Multiple output charge-coupled devices

Publications (2)

Publication Number Publication Date
CN101490846A CN101490846A (zh) 2009-07-22
CN101490846B true CN101490846B (zh) 2011-04-06

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CN2007800275356A Expired - Fee Related CN101490846B (zh) 2006-07-20 2007-07-09 多输出电荷耦合器件

Country Status (7)

Country Link
US (3) US7692706B2 (enExample)
EP (1) EP2044628A2 (enExample)
JP (1) JP2009545133A (enExample)
KR (1) KR20090129980A (enExample)
CN (1) CN101490846B (enExample)
TW (1) TW200818895A (enExample)
WO (1) WO2008010924A2 (enExample)

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JP2009089029A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp Ｃｃｄ型固体撮像素子
WO2012081154A1 (ja) * 2010-12-16 2012-06-21 パナソニック株式会社 撮像装置及び画像処理装置
US8411189B2 (en) * 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US8750060B2 (en) 2012-03-05 2014-06-10 Raytheon Company Repair device and method for integrated circuit structured arrays
US8519879B1 (en) * 2012-04-13 2013-08-27 Raytheon Company Precision charge-dump circuit
US9154713B2 (en) 2012-04-19 2015-10-06 Raytheon Company Repartitioned digital pixel
US8878256B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US8878255B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US9979905B2 (en) * 2015-11-17 2018-05-22 Microsoft Technology Licensing, Llc. Multimode photosensor
WO2020081330A1 (en) * 2018-10-15 2020-04-23 Bio-Rad Laboratories, Inc. Saturation avoidance in digital imaging
JP7159090B2 (ja) * 2019-03-20 2022-10-24 株式会社東芝 固体撮像装置及び固体撮像装置の制御方法
US12694913B2 (en) 2023-07-12 2026-07-28 Raytheon Company Reduced logic gate accumulators

Citations (2)

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US4879601A (en) * 1988-11-14 1989-11-07 Polaroid Corporation System and method of providing images from solid state sensor
US6462779B1 (en) * 1998-02-23 2002-10-08 Eastman Kodak Company Constant speed, variable resolution two-phase CCD

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JPS56158577A (en) 1980-05-10 1981-12-07 Victor Co Of Japan Ltd Solid state image pickup element
JPS5856458U (ja) * 1981-10-09 1983-04-16 株式会社日立製作所 カラ−固体撮像装置
US4513313A (en) * 1982-12-07 1985-04-23 Canon Kabushiki Kaisha Solid state imaging device
US4807037A (en) * 1987-03-06 1989-02-21 Kabushiki Kaisha Toshiba Low noise CCD image sensor having a plurality of horizontal CCD registers
NL8800627A (nl) * 1988-03-15 1989-10-02 Philips Nv Ladingsgekoppelde inrichting.
US5189498A (en) * 1989-11-06 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Charge coupled device
US5528643A (en) * 1989-11-13 1996-06-18 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
US5216489A (en) * 1990-03-02 1993-06-01 Sony Corporation Solid state image sensor
JP2873046B2 (ja) * 1990-05-01 1999-03-24 チノン株式会社 画像信号処理装置
CA2052148A1 (en) * 1990-09-27 1992-03-28 Tadashi Sugiki Method of driving a solid-state imaging device
JPH06205298A (ja) * 1992-11-06 1994-07-22 Sharp Corp 電荷結合型固体撮像装置
JP3406935B2 (ja) * 1994-01-31 2003-05-19 キヤノン株式会社 撮像装置
DE69512586T2 (de) * 1994-08-09 2000-05-04 Canon K.K., Tokio/Tokyo Bildaufnahmevorrichtung und Bildlesegerät damit
JPH09246519A (ja) * 1996-03-14 1997-09-19 Sony Corp 固体撮像装置およびその駆動方法
US5926215A (en) * 1996-10-17 1999-07-20 Eastman Kodak Company Fast readout of a color image sensor
JPH11164205A (ja) * 1997-11-28 1999-06-18 Sony Corp 固体撮像装置およびその駆動方法
JP3548410B2 (ja) * 1997-12-25 2004-07-28 キヤノン株式会社 固体撮像装置および固体撮像装置の信号読み出し方法
JP3214428B2 (ja) * 1998-01-05 2001-10-02 日本電気株式会社 カラーリニアイメージセンサおよびその駆動方法
JPH11234569A (ja) * 1998-02-13 1999-08-27 Sony Corp 固体撮像装置の駆動方法及び固体撮像素子、並びにカメラ
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US20050062868A1 (en) * 2003-03-24 2005-03-24 Tomohiro Shiiba Solid-state imaging device and method of driving solid-state imaging device
US7379107B2 (en) * 2004-12-10 2008-05-27 Eastman Kodak Company Image sensor for still or video photography
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US4879601A (en) * 1988-11-14 1989-11-07 Polaroid Corporation System and method of providing images from solid state sensor
US6462779B1 (en) * 1998-02-23 2002-10-08 Eastman Kodak Company Constant speed, variable resolution two-phase CCD

Also Published As

Publication number Publication date
KR20090129980A (ko) 2009-12-17
US20080018767A1 (en) 2008-01-24
CN101490846A (zh) 2009-07-22
US7692706B2 (en) 2010-04-06
EP2044628A2 (en) 2009-04-08
US20100157119A1 (en) 2010-06-24
US8098316B2 (en) 2012-01-17
US20100157118A1 (en) 2010-06-24
TW200818895A (en) 2008-04-16
JP2009545133A (ja) 2009-12-17
WO2008010924A3 (en) 2008-03-06
WO2008010924A2 (en) 2008-01-24
US8102455B2 (en) 2012-01-24

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Owner name: IMAGE SENSOR TECHNOLOGIES ACQUISITION CORPORATION

Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK

Effective date: 20120530

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Owner name: CHUSAISI IMAGING CO., LTD.

Free format text: FORMER NAME: IMAGE SENSOR TECHNOLOGIES ACQUISITION CORPORATION

CP03 Change of name, title or address

Address after: American New York

Patentee after: Chu Saisi Imaging Co.,Ltd.

Address before: California, USA

Patentee before: Image sensing technology acquisition group

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Address after: California, USA

Patentee after: Image sensing technology acquisition group

Address before: American New York

Patentee before: Eastman Kodak Co.

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Granted publication date: 20110406

Termination date: 20120709