KR20090125244A - 전이 금속 산화물을 플라즈마 에칭하는 방법 - Google Patents

전이 금속 산화물을 플라즈마 에칭하는 방법 Download PDF

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Publication number
KR20090125244A
KR20090125244A KR1020097018135A KR20097018135A KR20090125244A KR 20090125244 A KR20090125244 A KR 20090125244A KR 1020097018135 A KR1020097018135 A KR 1020097018135A KR 20097018135 A KR20097018135 A KR 20097018135A KR 20090125244 A KR20090125244 A KR 20090125244A
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KR
South Korea
Prior art keywords
transition metal
etching
carbon monoxide
plasma
oxide
Prior art date
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Ceased
Application number
KR1020097018135A
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English (en)
Korean (ko)
Inventor
우샤 라구람
마이클 더블유. 코네베키
Original Assignee
쌘디스크 3디 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 쌘디스크 3디 엘엘씨 filed Critical 쌘디스크 3디 엘엘씨
Publication of KR20090125244A publication Critical patent/KR20090125244A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR1020097018135A 2007-03-01 2008-02-29 전이 금속 산화물을 플라즈마 에칭하는 방법 Ceased KR20090125244A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/681,022 2007-03-01
US11/681,022 US7955515B2 (en) 2005-07-11 2007-03-01 Method of plasma etching transition metal oxides

Publications (1)

Publication Number Publication Date
KR20090125244A true KR20090125244A (ko) 2009-12-04

Family

ID=39760705

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018135A Ceased KR20090125244A (ko) 2007-03-01 2008-02-29 전이 금속 산화물을 플라즈마 에칭하는 방법

Country Status (7)

Country Link
US (1) US7955515B2 (https=)
EP (1) EP2115187A4 (https=)
JP (1) JP5042319B2 (https=)
KR (1) KR20090125244A (https=)
CN (1) CN101657567A (https=)
TW (1) TWI445077B (https=)
WO (1) WO2008106222A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7955515B2 (en) * 2005-07-11 2011-06-07 Sandisk 3D Llc Method of plasma etching transition metal oxides
US8916067B2 (en) 2011-10-19 2014-12-23 The Aerospace Corporation Carbonaceous nano-scaled materials having highly functionalized surface
GB201416483D0 (en) * 2014-09-18 2014-11-05 Rolls Royce Plc A method of machinging a gas turbine engine component
US20190385828A1 (en) * 2018-06-19 2019-12-19 Lam Research Corporation Temperature control systems and methods for removing metal oxide films

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4659426A (en) * 1985-05-03 1987-04-21 Texas Instruments Incorporated Plasma etching of refractory metals and their silicides
JPS63244848A (ja) 1987-03-31 1988-10-12 Toshiba Corp ドライエツチング方法
JP2871632B2 (ja) * 1996-11-15 1999-03-17 日本電気株式会社 ドライエッチング方法及びガス処理装置
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6391216B1 (en) 1997-09-22 2002-05-21 National Research Institute For Metals Method for reactive ion etching and apparatus therefor
JP2000114246A (ja) * 1998-08-07 2000-04-21 Ulvac Seimaku Kk ドライエッチング方法および装置、フォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法
US6555455B1 (en) * 1998-09-03 2003-04-29 Micron Technology, Inc. Methods of passivating an oxide surface subjected to a conductive material anneal
JP4257808B2 (ja) 1999-05-11 2009-04-22 独立行政法人科学技術振興機構 磁性材料のエッチング方法及びプラズマエッチング装置
JP3433721B2 (ja) * 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
US7030029B2 (en) * 2000-05-12 2006-04-18 Tokyo Electron Limited Method of high selectivity SAC etching
US6225202B1 (en) * 2000-06-21 2001-05-01 Chartered Semiconductor Manufacturing, Ltd. Selective etching of unreacted nickel after salicidation
US6525953B1 (en) * 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
AU2003214797A1 (en) * 2002-01-29 2003-09-02 Tokyo Electron Limited Plasma etching of ni-containing materials
US6806095B2 (en) * 2002-03-06 2004-10-19 Padmapani C. Nallan Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
WO2003085716A1 (en) 2002-04-08 2003-10-16 Tokyo Electron Limited Plasma etching method and plasma etching device
US7094704B2 (en) * 2002-05-09 2006-08-22 Applied Materials, Inc. Method of plasma etching of high-K dielectric materials
US20040014327A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US6946719B2 (en) * 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
US7338907B2 (en) * 2004-10-04 2008-03-04 Sharp Laboratories Of America, Inc. Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
US7656696B2 (en) * 2005-02-14 2010-02-02 Samsung Electronics Co., Ltd. Resistive memory device having resistor part for controlling switching window
US20060250836A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7955515B2 (en) * 2005-07-11 2011-06-07 Sandisk 3D Llc Method of plasma etching transition metal oxides
US20070010100A1 (en) * 2005-07-11 2007-01-11 Matrix Semiconductor, Inc. Method of plasma etching transition metals and their compounds

Also Published As

Publication number Publication date
WO2008106222A1 (en) 2008-09-04
JP5042319B2 (ja) 2012-10-03
JP2010521062A (ja) 2010-06-17
CN101657567A (zh) 2010-02-24
EP2115187A4 (en) 2011-12-28
US7955515B2 (en) 2011-06-07
US20070295690A1 (en) 2007-12-27
TW200842976A (en) 2008-11-01
EP2115187A1 (en) 2009-11-11
TWI445077B (zh) 2014-07-11

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