KR20090095300A - 유기 발광 표시 장치 - Google Patents
유기 발광 표시 장치 Download PDFInfo
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- KR20090095300A KR20090095300A KR1020080020569A KR20080020569A KR20090095300A KR 20090095300 A KR20090095300 A KR 20090095300A KR 1020080020569 A KR1020080020569 A KR 1020080020569A KR 20080020569 A KR20080020569 A KR 20080020569A KR 20090095300 A KR20090095300 A KR 20090095300A
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- electrode
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- drain electrode
- light emitting
- organic light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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Abstract
Description
Claims (11)
- 기판;상기 기판 상에 형성되고 실리콘을 포함하는 활성층;상기 기판상에 형성되고 상기 활성층과 절연되는 게이트 전극;상기 게이트 전극과 절연되고 상기 활성층과 전기적으로 연결되는 단일층 구조의 소스 전극 및 드레인 전극;상기 소스 전극 또는 드레인 전극과 전기적으로 연결되는 제1 전극;상기 제1 전극 상에 형성되는 유기 발광층; 및상기 유기 발광층상에 형성되는 제2 전극을 포함하고,상기 소스 전극 및 드레인 전극은 니켈 및 실리콘을 함유하는 알루미늄 합금을 포함하는 유기 발광 표시 장치.
- 제1 항에 있어서,상기 소스 전극 및 드레인 전극은 니켈 및 실리콘을 각각 1 내지 3wt% 함유하는 유기 발광 표시 장치.
- 제1 항에 있어서,상기 소스 전극 및 드레인 전극은 붕소(B), 탄소(C) 및 란탄족 원소로 이루어지는 군으로부터 선택된 어느 하나를 포함하는 유기 발광 표시 장치.
- 제1 항에 있어서,상기 소스 전극 및 드레인 전극은 붕소(B), 탄소(C) 및 란탄(La)족 원소로 이루어지는 군으로부터 선택된 어느 하나를 0.01 내지 2wt% 포함하는 유기 발광 표시 장치.
- 제1 항에 있어서,상기 제1 전극은 ITO를 포함하는 유기 발광 표시 장치.
- 제1 항에 있어서,상기 제1 전극은 상기 소스 전극 또는 드레인 전극과 접하고 ITO를 구비하는 제1 층, 상기 제1 층상에 형성되고 상기 유기 발광층으로 빛을 반사하도록 반사막으로 구비되는 제2 층 및 상기 제2 층상에 형성되고 상기 유기 발광층에 전하를 공급하는 제3 층을 포함하는 유기 발광 표시 장치.
- 기판;상기 기판 상에 형성되고 실리콘을 포함하는 활성층;상기 기판상에 형성되고 상기 활성층과 절연되는 게이트 전극;상기 게이트 전극과 절연되고 상기 활성층과 전기적으로 연결되는 단일층 구조의 소스 전극 및 드레인 전극;상기 소스 전극 또는 드레인 전극과 전기적으로 연결되는 제1 전극;상기 제1 전극 상에 형성되는 유기 발광층; 및상기 유기 발광층상에 형성되는 제2 전극을 포함하고,상기 소스 전극 및 드레인 전극은 게르마늄 및 가돌리늄을 함유하는 알루미늄 합금을 포함하는 유기 발광 표시 장치.
- 제7 항에 있어서,상기 소스 전극 및 드레인 전극은 게르마늄을 1 내지 3wt% 함유하는 유기 발광 표시 장치.
- 제7 항에 있어서,상기 소스 전극 및 드레인 전극은 가돌리늄을 0.01 내지 2wt% 함유하는 유기 발광 표시 장치.
- 제7 항에 있어서,상기 제1 전극은 ITO를 포함하는 유기 발광 표시 장치.
- 제7 항에 있어서,상기 제1 전극은 상기 소스 전극 또는 드레인 전극과 접하고 ITO를 구비하는 제1 층, 상기 제1 층상에 형성되고 상기 유기 발광층으로 빛을 반사하도록 반사막 으로 구비되는 제2 층 및 상기 제2 층상에 형성되고 상기 유기 발광층에 전하를 공급하는 제3 층을 포함하는 유기 발광 표시 장치.
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US11844256B2 (en) | 2020-11-12 | 2023-12-12 | Samsung Display Co., Ltd. | Display device including third conductive layer directly contacting first conductive layer and second conductive layer |
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