KR20090093621A - Photo interrupter and manufacturing method thereof - Google Patents
Photo interrupter and manufacturing method thereofInfo
- Publication number
- KR20090093621A KR20090093621A KR1020080019253A KR20080019253A KR20090093621A KR 20090093621 A KR20090093621 A KR 20090093621A KR 1020080019253 A KR1020080019253 A KR 1020080019253A KR 20080019253 A KR20080019253 A KR 20080019253A KR 20090093621 A KR20090093621 A KR 20090093621A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- light
- chip
- light receiving
- emitting chip
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000465 moulding Methods 0.000 claims abstract description 69
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 238000001579 optical reflectometry Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000001746 injection moulding Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
본 발명은 포토 인터럽터 및 그 제조방법에 관한 것으로, 보다 상세하게는 프린트 기판 등에 면실장을 하는 씨오비형 포토 인터럽터에서 플라스틱 사출물 대신 불투명 수지로 몰딩을 하여 하우징을 일체화하고, 소형화를 이룰 수 있는 포토 인터럽터 및 그 제조방법에 관한 것이다.The present invention relates to a photo interrupter and a method of manufacturing the same. More specifically, in a COB type photo interrupter which is face-mounted to a printed board or the like, molding is made of an opaque resin instead of plastic injection molding to integrate the housing and achieve miniaturization. An interrupter and a method of manufacturing the same.
일반적으로 포토 인터럽터는 금속재질의 리드 프레임을 사용한 구성이 있지만 요즘에 있어서는 프린트 기판 등에 대하여 면실장할 수 있도록 구성하는 면실장 형의 포토 인터럽터가 개발되었다. In general, a photo interrupter has a structure using a metal lead frame, but nowadays, a surface mount photo interrupter has been developed that can be surface mounted on a printed board or the like.
종래 면실장형의 포토 인터럽터는 절연기판의 윗면에 발광칩과 수광칩을 탑제하고, 이들 발광칩 및 수광칩을 각각의 투명체에 밀봉하는 한편, 상기 절연기판의 하면에는 상기 발광칩에 대한 한 쌍의 단자 전극과 상기 수광칩에 대한 한 쌍의 단자 전극을 형성하고, 이러한 단자 전극에 프린트 기판 등에 대하여 용접 실장할 수 있게 하고, 상기 절연기판의 윗면에 발광칩을 투명 에폭시로 몰딩, 수광칩도 투명 에폭시로 몰딩하고, 상기 절연기판의 윗면에 캡체를 구비하되, 상기 발광칩으로부터 빛이 상기 캡체를 가로질러 수광칩에 도달할 수 있도록 투과용 슬릿을 형성하여 구성되었다. Conventional surface-mounted photo interrupters are equipped with a light emitting chip and a light receiving chip on an upper surface of an insulated substrate, and seals the light emitting chip and the light receiving chip to respective transparent bodies, and a pair of light emitting chips on the lower surface of the insulating substrate. A terminal electrode and a pair of terminal electrodes for the light-receiving chip are formed, the terminal electrodes can be welded and mounted on the printed circuit board, and the light emitting chip is molded with a transparent epoxy on the upper surface of the insulating substrate, and the light-receiving chip is also transparent. Molded with epoxy, and provided with a cap body on the upper surface of the insulating substrate, it was configured by forming a transmission slit so that light from the light emitting chip can reach the light receiving chip across the cap body.
이러한, 종래의 면실장형 포토 인터럽터는 상기 캡체가 불투명 하우징 사출물로 구성되어, 상기 불투명 하우징 사출물을 인쇄회로기판에 고정하여 제품을 제작하였다.In the conventional surface-mounted photo interrupter, the cap body is composed of an opaque housing injection molding, and the opaque housing injection molding is fixed to a printed circuit board to manufacture a product.
또 다른 종래 기술은 인쇄회로기판에 칩을 탑제하고, 사출물 하우징으로 고정한 후 사출물 하우징 안에 에푹시로 가득 채우는 방법도 있다. Another prior art is a method of mounting a chip on a printed circuit board, fixing it with an injection molding housing, and then filling the injection molding housing with ephexi.
그러나, 이와 같은 종래 기술은 상기 캡체가 불투명 하우징 사출물로 구성되어 있으므로 상기 하우징을 인쇄회로기판에 접착제로 부착하여 포토 인터럽터를 제조하였고, 이에 따라 250℃ 이상의 고온 리플로우(reflow) 시 인쇄회로기판에서 하우징이 떨어져 조금씩 들뜨는 현상이 발생하는 문제점이 있었다.However, in the prior art, since the cap body is composed of an opaque housing injection molding, the housing is attached to the printed circuit board with an adhesive to manufacture a photo interrupter, and thus, in the printed circuit board at high temperature reflow of 250 ° C. or higher, There was a problem in that the falling off the housing occurs little by little.
또한, 하우징 사출물을 인쇄회로기판에 접착제로 부착함으로써, 상기 하우징을 낱개로 한 개씩 부착해야 하므로 제조방법이 불편하고 복잡한 단점이 있었다. In addition, by attaching the housing injection-molded product to the printed circuit board with an adhesive, there is a disadvantage in that the manufacturing method is inconvenient and complicated because the housing must be attached one by one.
또한, 인쇄회로기판에 하우징 사출물을 부착한 후 사출물 안에 수지로 가득 채우고 난 다음 갭(gap)을 형성하기 위하여 소잉(sawing)을 실시하는데 소잉 시 슬릿(slit)면이 깨끗하게 되지 않으므로 광효율이 현저히 떨어질 수 있는 문제점이 있었다.In addition, after the housing injection molding is attached to the printed circuit board, the filling is filled with resin and then sawing is performed to form a gap. There was a problem that could be.
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로서, 하우징을 광반사 불투명한 수지로 몰딩을 실시함으로써, 제조방법이 단순해지고 고온 리플로우 작업 시 들뜨는 현상이 없어 제품의 품질을 향상시킬 수 있는 포토 인터럽터 및 그 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, by molding the housing with a light reflecting opaque resin, the manufacturing method is simple and there is no lifting phenomenon during the high temperature reflow operation can improve the product quality It is an object of the present invention to provide a photo interrupter and a method of manufacturing the same.
또한, 하우징이 사출물이 아니라 수지로 됨으로써, 갭(gap)을 형성하기 위하여 소잉(sawing)을 실시할 때 슬릿(slit)면이 깨끗하게 되어 광효율을 향상시킬 수 있는 포토 인터럽터 및 그 제조방법을 제공하는데 그 목적이 있다.In addition, since the housing is made of a resin, not an injection molded product, a slit surface is cleared when sawing is performed to form a gap, thereby providing a photo interrupter and a method of manufacturing the same. The purpose is.
상기와 같은 목적을 달성하기 위하여, 본 발명에서는 전극이 형성된 인쇄회로기판과, 상기 인쇄회로기판의 상면에 부착된 발광칩과, 상기 발광칩에 대응되도록 마주보는 위치의 상기 인쇄회로기판의 상면에 부착된 수광칩과, 상기 발광칩과 수광칩을 투명한 수지로 몰딩하여 형성되며, 상기 발광칩과 수광칩의 수직방향으로 상부에 각각 반사면을 형성하여 상기 발광칩으로부터 방출하여 나온 빛이 상기 수광칩에 입사될 수 있도록 하는 1차 몰딩부와, 상기 1차 몰딩부를 감싸도록 불투명한 수지로 몰딩하여 형성되며, 상기 발광칩의 상부에 형성된 반사면과 상기 수광칩의 상부에 형성된 반사면이 마주하는 위치에 각각 슬릿이 형성되는 2차 몰딩부를 포함하여 이루어지는 포토 인터럽터가 제공된다.In order to achieve the above object, in the present invention, a printed circuit board having an electrode formed thereon, a light emitting chip attached to an upper surface of the printed circuit board, and a top surface of the printed circuit board facing each other to correspond to the light emitting chip. The light-receiving chip and the light-emitting chip and the light-receiving chip are formed by molding a transparent resin, and light is emitted from the light-emitting chip by forming a reflective surface on the upper portion in the vertical direction of the light-emitting chip and the light-receiving chip. The first molding part to be incident on the chip, and formed by molding with an opaque resin to surround the first molding part, the reflective surface formed on the upper portion of the light emitting chip and the reflective surface formed on the light receiving chip face each other. There is provided a photo interrupter comprising a secondary molding portion in which slits are formed at respective positions.
본 발명에 있어서, 상기 투명 또는 불투명 수지는 포토인터럽터에 설치되는 발광칩에서 발광되는 광에 대한 투명 또는 불투명을 의미한다. In the present invention, the transparent or opaque resin means transparent or opaque to light emitted from the light emitting chip installed in the photointerrupter.
본 발명에 있어서, 상기 1차 몰딩부의 반사면은 수직방향을 기준으로 45°의 각도로 경사지도록 형성되며, 동일한 높이로 마주보게 형성됨으로써, 상기 발광칩으로부터 방출하여 나온 빛이 상기 수광칩에 입사될 수 있도록 한다.In the present invention, the reflecting surface of the primary molding part is formed to be inclined at an angle of 45 ° with respect to the vertical direction, and formed to face the same height, so that the light emitted from the light emitting chip is incident on the light receiving chip. To be possible.
본 발명에 있어서, 상기 2차 몰딩부는 외란광을 95% 이상 차단하고 광반사율이 90% 이상의 에폭시 수지로 이루어지는 것이 바람직하다.In the present invention, it is preferable that the secondary molding part blocks 95% or more of extraneous light and has a light reflectance of 90% or more of epoxy resin.
또한, 본 발명에서는 상기 발광칩이 부착된 상기 인쇄회로기판의 상면에 우물형태의 딤플이 형성되어 발광칩에서 방출하는 빛이 딤플의 경사면에서 반사하여 수직방향으로의 광효율을 높일 수 있도록 구성함도 가능하다.In addition, in the present invention, a well-shaped dimple is formed on the upper surface of the printed circuit board to which the light emitting chip is attached, so that the light emitted from the light emitting chip is reflected on the inclined surface of the dimple to increase the light efficiency in the vertical direction. It is possible.
한편, 상기와 같은 목적을 달성하기 위한 포토 인터럽터 제조방법에 있어서는, 인쇄회로기판 상면에 발광칩과 수광칩을 올려놓은 후 도전성 와이어로 발광칩과 수광칩의 패드와 인쇄회로기판의 패드를 연결하는 단계와, 상기 발광칩과 수광칩을 투명한 수지로 1차 몰딩을 실시하되, 상기 발광칩과 수광칩의 수직방향에 반사면을 형성하여 발광칩으로부터 방출하여 나온 빛이 수광칩에 입사될 수 있도록 1차 몰딩부를 형성하는 단계와, 상기 1차 몰딩부를 감싸도록 불투명한 수지로 2차 몰딩을 실시하되, 상기 발광칩의 상부에 형성된 반사면과 상기 수광칩의 상부에 형성된 반사면이 마주하는 위치에 슬릿이 형성되도록 2차 몰딩부를 형성하는 단계로 진행된다.On the other hand, in the photo interrupter manufacturing method for achieving the above object, the light emitting chip and the light receiving chip is placed on the upper surface of the printed circuit board, and then connecting the pad of the light emitting chip and the light receiving chip and the pad of the printed circuit board with a conductive wire. And molding the light emitting chip and the light receiving chip with a transparent resin to form a reflective surface in a vertical direction of the light emitting chip and the light receiving chip so that light emitted from the light emitting chip can be incident on the light receiving chip. Forming a primary molding part, and performing secondary molding with an opaque resin to surround the primary molding part, wherein the reflective surface formed on the light emitting chip and the reflective surface formed on the light receiving chip face each other. Proceeding to the step of forming the secondary molding portion so that the slit is formed.
본 발명에 있어서, 상기 2차 몰딩부는 외란광을 95% 이상 차단하고 반사율이 90% 이상의 에폭시 수지로 형성하는 것을 특징으로 한다.In the present invention, the secondary molding portion is characterized in that it blocks 95% or more of the disturbance light and is formed of an epoxy resin of 90% or more reflectance.
본 발명은 일 측면에서, 인쇄회로기판에 다수의 발광칩과 수광칩을 실장하여 동시에 다량의 포토인터럽터를 제조하는 공정을 제공한다. In accordance with another aspect of the present invention, a plurality of light emitting chips and light receiving chips are mounted on a printed circuit board to provide a process of manufacturing a large amount of photointerruptors at the same time.
본 발명에 따른 복수의 포토인터럽터 제조 공정은 인쇄회로기판 상면에 다수의 발광칩과 수광칩을 각각 정렬하여 올려놓은 후 도전성 와이어로 각 발광칩과 수광칩의 패드와 인쇄회로기판의 패드를 연결하는 단계와, 상기 각각의 발광칩과 수광칩의 상부에 투광성 수지로 사각 기둥형태로 1차 몰딩을 실시하되, 상기 발광칩과 수광칩의 수직방향에 상호 대향하는 반사면을 형성하여 발광칩으로부터 방출하여 나온 빛이 수광칩에 입사될 수 있도록 1차 몰딩부를 형성하는 단계와, 1차 몰딩부를 감싸도록 불투광성 수지로 2차 몰딩을 실시하되, 상기 발광칩의 상부에 형성된 반사면과 상기 수광칩의 상부에 형성된 반사면이 마주하는 위치에 슬릿이 형성되도록 2차 몰딩부를 형성하는 단계; 및 발광칩과 수광칩이 각각 1개씩 내장되도록 인쇄회로기판을 절단하는 단계로 진행된다. In the process of manufacturing a plurality of photointerrupters according to the present invention, after arranging a plurality of light emitting chips and light receiving chips on the upper surface of the printed circuit board, the conductive wires connect the pads of the light emitting chips and the light receiving chips with the pads of the printed circuit board. Step 1, the first molding in the form of a square pillar with a light-transmissive resin on each of the light emitting chip and the light receiving chip, forming a reflective surface opposite to the vertical direction of the light emitting chip and the light receiving chip to emit from the light emitting chip Forming a primary molding part so that the emitted light may be incident on the light receiving chip, and performing secondary molding with an opaque resin to surround the primary molding part, wherein the reflective surface formed on the light emitting chip and the light receiving chip Forming a secondary molding part such that a slit is formed at a position where a reflective surface formed on an upper portion of the upper surface of the upper surface of the upper surface of the upper surface of the upper surface of the upper surface of the upper surface of the upper surface of the upper surface of the upper surface; And cutting the printed circuit board to include one light emitting chip and one light receiving chip.
본 발명에 있어서, 상기 수광 또는 발광칩을 내장하도록 기판에 형성되는 사각기둥형태의 1차 몰딩부들은 상응하는 몰드컵을 가지는 금형몰드에 인쇄회로기판을 장착하고 몰드물을 충진함으로서 제조될 수 있다. 발명의 바람직한 실시에 있어서, 수광칩을 덮는 다수의 몰드컵이 한번의 충진으로 충진될 수 있도록, 상기 수광칩을 포함하는 사각 기둥들은 하단이 상호 연통되는 것이 바람직하다. 또한, 발광칩을 덮는 다수의 몰드컵이 한번의 충진으로 충진될 수 있도록, 상기 발광칩을 포함하는 사각 기둥들은 하단이 상호 연통되는 것이 바람직하다. 또한, 발광칩과 수광칩을 포함하는 기둥들은 광이 새거나 외란광이 들어오는 것을 방지할 수 있도록 사각 기둥들이 하단이 분리되어야 한다. In the present invention, the primary molded parts of the square pillar shape formed on the substrate to embed the light receiving or light emitting chip may be manufactured by mounting a printed circuit board on a mold mold having a corresponding mold cup and filling a mold. In a preferred embodiment of the invention, it is preferable that the square pillars including the light receiving chip communicate with each other at the bottom so that a plurality of mold cups covering the light receiving chip may be filled in one filling. In addition, it is preferable that the square pillars including the light emitting chip have lower ends communicating with each other so that a plurality of mold cups covering the light emitting chip may be filled with one filling. In addition, the pillars including the light emitting chip and the light receiving chip should be separated from the bottom of the square pillars to prevent leakage of light or incoming disturbance light.
본 발명에 있어서, 상기 발광칩들은 분리후 수광칩과 대향하지 않는 측면의 하단부에서 제1 몰드물이 노출되어, 발광 효율이 낮아지는 것을 방지할 수 있도록, 노출되는 부분보다 높은 위치 또는 낮은 위치에 실장되는 것이 바람직하다. 발명의 일 실시에 있어서, 노출되는 부분보다 낮은 위치에 실장하기 위해서 인쇄회로기판의 바닥면을 딤플형태로 낮출 수 있으며, 또한, 노출되는 부분보다 높은 위치에 실장하기 위해서, 인쇄회로기판에 일정 높이의 전도성 받침대를 형성하고 그 위에 실장할 수 있다. In the present invention, the light emitting chips may be exposed at a lower or higher position than the exposed portions so that the first mold is exposed at the lower end of the side that does not face the light receiving chip after separation, thereby preventing the luminous efficiency from being lowered. It is preferable to mount. In one embodiment of the invention, the bottom surface of the printed circuit board can be lowered in the form of a dimple in order to mount at a position lower than the exposed portion, and also, in order to mount at a position higher than the exposed portion, the printed circuit board has a certain height. Conductive pedestals can be formed and mounted thereon.
상기와 같은 본 발명에 의하면, 하우징을 광반사 불투명한 수지로 몰딩을 실시함으로써, 제조방법이 단순해지고 고온 리플로우 작업 시 들뜨는 현상이 없어 제품의 품질을 향상시킬 수 있는 효과가 있다. According to the present invention as described above, by molding the housing with a light reflective opaque resin, the manufacturing method is simple, there is no lifting phenomenon during the high temperature reflow operation, there is an effect that can improve the quality of the product.
또한, 포토 인터럽터의 하우징을 일체화함으로써, 소형화할 수 있는 효과가 있다.Further, by integrating the housing of the photo interrupter, there is an effect that can be miniaturized.
또한, 인쇄회로기판에 딤플을 형성함으로써 수광소자에 입사한 광효율을 극대화 할 수 있다.In addition, by forming a dimple on the printed circuit board it is possible to maximize the light efficiency incident to the light receiving element.
또한, 하우징이 사출물이 아니라 수지로 됨으로써, 갭(gap)을 형성하기 위하여 소잉(sawing)을 실시할 때 슬릿(slit)면이 깨끗하게 되어 광효율을 향상시킬 수 있다.In addition, since the housing is made of a resin rather than an injection molding, the slit surface is clean when sawing is performed to form a gap, thereby improving light efficiency.
도 1은 본 발명의 포토 인터럽터의 구성을 보인 종단면도,1 is a longitudinal sectional view showing a configuration of a photo interrupter of the present invention;
도 2a 내지 도 2d는 본 발명의 포토 인터럽터의 제조공정을 도시한 사시도,2a to 2d is a perspective view showing the manufacturing process of the photo interrupter of the present invention,
도 3a 내지 도 3d는 본 발명의 포토 인터럽터 제품의 제조공정을 도시한 사시도,3a to 3d is a perspective view showing the manufacturing process of the photo interrupter product of the present invention,
도 4는 본 발명의 포토 인터럽터의 다른 실시예를 도시한 종단면도.4 is a longitudinal sectional view showing another embodiment of the photo interrupter of the present invention;
<도면 중 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 인쇄회로기판 20 : 발광칩10: printed circuit board 20: light emitting chip
30 : 수광칩 40 : 1차 몰딩부30: light receiving chip 40: primary molding part
50 : 2차 몰딩부50: secondary molding part
이하, 본 발명의 포토 인터럽터 및 그 제조방법의 실시예를 첨부한 도면을 참조하여 설명한다.Hereinafter, with reference to the accompanying drawings, an embodiment of a photo interrupter of the present invention and a manufacturing method thereof will be described.
도 1은 본 발명의 포토 인터럽터의 구성을 보인 종단면도로서, 본 발명의 포토 인터럽터는 전극이 형성된 인쇄회로기판(10)과, 상기 인쇄회로기판(10)의 상면에 부착된 발광칩(20)과, 수광칩(30)과, 상기 발광칩(20)과 수광칩(30)을 투명한 수지로 몰딩하여 형성한 1차 몰딩부(40)와, 상기 1차 몰딩부(40)를 감싸도록 불투명한 수지로 몰딩하여 형성한 2차 몰딩부(50)를 포함하여 이루어진다.1 is a longitudinal cross-sectional view showing a configuration of a photo interrupter of the present invention, wherein the photo interrupter of the present invention includes a printed circuit board 10 having electrodes formed thereon and a light emitting chip 20 attached to an upper surface of the printed circuit board 10. And a light receiving chip 30, a first molding part 40 formed by molding the light emitting chip 20 and the light receiving chip 30 with a transparent resin, and an opacity to surround the first molding part 40. And a secondary molding part 50 formed by molding with one resin.
이와 같이 본 발명의 포토 인터럽터는 인쇄회로기판 등에 면실장을 하는 씨오비(COB)형 포토 인터럽터로서, 상기 인쇄회로기판(10)의 상면에 발광칩(20)과 수광칩(30)을 마주보도록 실장한다.As described above, the photo interrupter of the present invention is a COB type photo interrupter for surface-mounting a printed circuit board or the like, and faces the light emitting chip 20 and the light receiving chip 30 on the upper surface of the printed circuit board 10. Mount it.
상기 1차 몰딩부(40)는 투명한 수지로 이루어지며, 상기 발광칩(20)과 수광칩(30)의 수직방향으로 상부에 각각 반사면(41)(42)을 형성한 형상이다. The primary molding part 40 is made of a transparent resin and has a shape in which reflective surfaces 41 and 42 are formed on the light emitting chip 20 and the light receiving chip 30 in the vertical direction.
상기 반사면(41)(42)은 상기 발광칩(20)으로부터 방출하여 나온 빛이 상기 수광칩(30)에 입사될 수 있도록 수직방향을 기준으로 45°의 각도로 경사지도록 형성되며, 동일한 높이로 마주보게 형성되는 것이 바람직하다.The reflective surfaces 41 and 42 are formed to be inclined at an angle of 45 ° with respect to the vertical direction so that light emitted from the light emitting chip 20 can be incident on the light receiving chip 30, and have the same height. It is preferable that they are formed to face each other.
이와 같이 1차 몰딩부(40)에 형성된 반사면(41)(42)으로 인해 상기 발광칩으로부터 방출하여 나온 빛은 수직방향으로 상부에 구비된 상기 반사면(41)에 부딪힌 후 수광칩(30) 방향으로 반사되고, 이후 수광칩(30)의 상부에 위치한 반사면(42)에 부딪히여 최종적으로 수광칩(30)에 입사될 수 있게 된다.As such, the light emitted from the light emitting chip due to the reflecting surfaces 41 and 42 formed on the primary molding part 40 strikes the reflecting surface 41 provided on the upper part in the vertical direction, and then receives the light receiving chip 30. ), And then hits the reflective surface 42 located above the light receiving chip 30 to finally enter the light receiving chip 30.
본 발명에서는 상기 1차 몰딩부(40)를 감싸는 하우징으로서, 불투명한 수지로 몰딩한 2차 몰딩부(50)를 적용하였다. In the present invention, as the housing surrounding the primary molding part 40, a secondary molding part 50 molded with an opaque resin was applied.
즉, 종래의 사출물로 이루어진 하우징이 아니라 수지를 이용한 몰딩부로 하우징을 형성함으로써, 하우징을 일체화할 수 있고 포토 인터럽터를 소형화할 수 있는 것이다.That is, by forming the housing by a molding part using a resin rather than a housing made of a conventional injection molding, the housing can be integrated and the photo interrupter can be miniaturized.
상기 2차 몰딩부(50)는 상기 발광칩(20)의 상부에 형성된 반사면(41)과 상기 수광칩(30)의 상부에 형성된 반사면(42)이 마주하는 위치에 각각 슬릿(53)(54)이 형성되어 광이 통과할 수 있도록 하며, 그 재질로서는 불투명한 에폭시 수지로 이루어지는 것이다. The secondary molding unit 50 has slits 53 at positions where the reflective surface 41 formed on the light emitting chip 20 and the reflective surface 42 formed on the light receiving chip 30 face each other. 54 is formed to allow light to pass therethrough, and the material is made of an opaque epoxy resin.
그 중에서도 상기 2차 몰딩부(50)는 광반사율이 우수한 에폭시 수지로 이루어지는 것이 바람직하며, 본 발명에서는 외란광을 95% 이상 차단하고 광반사율이 90% 이상의 에폭시 수지로 상기 2차 몰딩부(50)를 형성하는 것에 특징이 있다.In particular, the secondary molding part 50 is preferably made of an epoxy resin having excellent light reflectivity, and in the present invention, the secondary molding part 50 is made of an epoxy resin that blocks 95% or more of disturbance light and has a light reflectance of 90% or more. It is characteristic to form).
이와 같은 본 발명의 2차 몰딩부(50)로 인해, 본 발명의 포토 인터럽터는 제조방법이 단순해지고 고온 리플로우 작업 시 들뜨는 현상이 없어 제품의 품질을 향상시킬 수 있는 효과가 있다. Due to the secondary molding unit 50 of the present invention, the photo interrupter of the present invention has the effect of simplifying the manufacturing method and there is no lifting phenomenon during the high temperature reflow operation to improve the quality of the product.
첨부한 도 2a 내지 도 2d는 본 발명의 포토 인터럽터의 제조공정을 도시한 사시도이고, 도 3a 내지 도 3d는 본 발명의 포토 인터럽터 제품의 제조공정을 도시한 사시도이다.2A to 2D are perspective views illustrating a manufacturing process of a photo interrupter of the present invention, and FIGS. 3A to 3D are perspective views illustrating a manufacturing process of a photo interrupter product of the present invention.
이에 도시한 도면을 참조하여 본 발명의 포토 인터럽터 제조방법을 설명하면 다음과 같다. The photo interrupter manufacturing method of the present invention will be described with reference to the drawings as follows.
먼저, 전극이 형성된 인쇄회로기판(10)의 상면에 발광칩(20)과 수광칩(30)을 올려놓는다.First, the light emitting chip 20 and the light receiving chip 30 are placed on the upper surface of the printed circuit board 10 on which the electrodes are formed.
이후 도전성 와이어(11)로 발광칩(20)과 수광칩(30)의 패드와 인쇄회로기판(10)의 패드를 연결한다.Thereafter, the pad of the light emitting chip 20, the light receiving chip 30, and the pad of the printed circuit board 10 are connected to each other using the conductive wire 11.
이후, 상기 발광칩(20)과 수광칩(30)을 투명한 수지로 1차 몰딩을 실시하되, 상기 발광칩(20)과 수광칩(30)의 수직방향에 반사면(41)(42)이 형성되도록 하여 상기 발광칩(20)으로부터 방출하여 나온 빛이 수광칩(30)에 입사될 수 있도록 1차 몰딩부(40)를 형성한다.Thereafter, primary molding of the light emitting chip 20 and the light receiving chip 30 with a transparent resin is performed, but the reflective surfaces 41 and 42 are disposed in the vertical direction of the light emitting chip 20 and the light receiving chip 30. The primary molding part 40 is formed to allow the light emitted from the light emitting chip 20 to be incident on the light receiving chip 30.
이후, 상기 1차 몰딩부(40)를 감싸도록 불투명한 수지로 2차 몰딩을 실시하되, 상기 발광칩의 상부에 형성된 반사면(41)과 상기 수광칩의 상부에 형성된 반사면(42)이 마주하는 위치에 슬릿(53)(54)이 형성되도록 2차 몰딩부(50)를 형성한다.Subsequently, secondary molding is performed with an opaque resin to surround the primary molding part 40, and the reflective surface 41 formed on the light emitting chip and the reflective surface 42 formed on the light receiving chip are The secondary molding part 50 is formed such that the slits 53 and 54 are formed at opposite positions.
여기서, 상기 2차 몰딩부(50)는 외란광을 95% 이상 차단하고 반사율이 90% 이상의 에폭시로 2차 몰딩을 실시한다. Here, the secondary molding part 50 blocks 95% or more of disturbance light and performs secondary molding with epoxy having a reflectance of 90% or more.
이와 같은 본 발명의 포토 인터럽터는 빛이 발광칩(20)에서 방출되면 발광칩(20) 상부의 반사면(41)을 거쳐 발광부 슬릿(53)을 통과하고, 수광부 슬릿(54)을 통과한 다음 수광칩(30) 상부의 반사면(42)을 거쳐 수광칩(30)에 전달되어 인터럽터 센서 역할을 한다. In the photo interrupter of the present invention, when light is emitted from the light emitting chip 20, the light interrupter passes through the light emitting part slit 53 through the reflecting surface 41 on the top of the light emitting chip 20, and passes through the light receiving part slit 54. Next, the light is transmitted to the light receiving chip 30 through the reflecting surface 42 on the light receiving chip 30 to serve as an interrupt sensor.
이와 같은 본 발명의 포토 인터럽터의 제품을 제작하는 경우, 도 3a 내지 도 3d에서 보는 바와 같이, 인쇄회로기판에 다수개의 발광칩과 수광칩을 올려놓아 와이어 본딩작업을 한 후 1차 몰딩부를 형성하고, 2차 몰딩부를 형성한다. When manufacturing the product of the photo interrupter of the present invention, as shown in Figures 3a to 3d, a plurality of light emitting chips and light receiving chips on the printed circuit board after the wire bonding operation to form a primary molding portion , The secondary molding part is formed.
이후, 갭(gap)을 형성하기 위하여 소잉(sawing)을 실시하는데, 본 발명의 포토 인터럽터는 2차 몰딩부로 하우징이 형성되어 있으므로 소잉 시 슬릿(slit)면이 깨끗하게 절단될 수 있어 광효율이 떨어지는 문제점을 해결할 수 있다.Subsequently, sawing is performed to form a gap. The photointerrupter of the present invention has a housing formed as a secondary molding part, so when the sawing, the slit surface can be cut cleanly so that the light efficiency is lowered. Can be solved.
첨부한 도 4는 본 발명의 포토 인터럽터의 다른 실시예를 도시한 종단면도로서, 발광부의 수직방향으로의 광효율을 높이기 위하여 발광칩(200)이 부착된 인쇄회로기판(100)의 상면에 우물형태의 딤플(101)을 형성하는 것도 가능하다. 4 is a longitudinal cross-sectional view showing another embodiment of the photo interrupter of the present invention, in which a well shape is formed on the upper surface of the printed circuit board 100 to which the light emitting chip 200 is attached in order to increase the light efficiency in the vertical direction of the light emitting unit. It is also possible to form the dimple 101.
이와 같이 딤플(101)이 형성된 경우, 상기 발광칩(200)에서 방출하는 빛이 딤플(101)의 경사면에서 반사하므로 수직방향으로의 광효율을 높일 수 있는 장점이 있다.When the dimple 101 is formed as described above, since the light emitted from the light emitting chip 200 reflects from the inclined surface of the dimple 101, there is an advantage of increasing light efficiency in the vertical direction.
Claims (9)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100006905A (en) * | 2008-07-10 | 2010-01-22 | 카오스 (주) | Transmission type photo interrupter |
| CN112526627A (en) * | 2019-08-29 | 2021-03-19 | 佳能株式会社 | Optical sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006147944A (en) | 2004-11-22 | 2006-06-08 | Citizen Electronics Co Ltd | Photo interrupter |
| JP2007059657A (en) | 2005-08-25 | 2007-03-08 | Citizen Electronics Co Ltd | Photo interrupter |
| JP2007059658A (en) | 2005-08-25 | 2007-03-08 | Citizen Electronics Co Ltd | Photo interrupter |
| JP2007109851A (en) * | 2005-10-13 | 2007-04-26 | Citizen Electronics Co Ltd | Photo interrupter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100006905A (en) * | 2008-07-10 | 2010-01-22 | 카오스 (주) | Transmission type photo interrupter |
| CN112526627A (en) * | 2019-08-29 | 2021-03-19 | 佳能株式会社 | Optical sensor |
| US11585959B2 (en) * | 2019-08-29 | 2023-02-21 | Canon Kabushiki Kaisha | Optical sensor |
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