JP2006147944A - Photo interrupter - Google Patents

Photo interrupter Download PDF

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Publication number
JP2006147944A
JP2006147944A JP2004337843A JP2004337843A JP2006147944A JP 2006147944 A JP2006147944 A JP 2006147944A JP 2004337843 A JP2004337843 A JP 2004337843A JP 2004337843 A JP2004337843 A JP 2004337843A JP 2006147944 A JP2006147944 A JP 2006147944A
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light
light emitting
resin body
receiving
light receiving
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Japanese (ja)
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Hirohiko Ishii
廣彦 石井
Takeshi Miura
剛 三浦
Yuichiro Tanda
祐一郎 反田
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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Priority to JP2004337843A priority Critical patent/JP2006147944A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To improve product accuracy as a photo interrupter and increase a light emission quantity and a light reception quantity by efficiently utilizing light emitted from a light emitting device to improve the reliability of position detection. <P>SOLUTION: The interrupter comprises an insulating board 22; a light emitting element 28 comprising a light emitter 23 and a light receiver 24 disposed right and left opposite to each other on the upside 26 of the insulating board 22 with the emitting surface 29 of the emitter 23 disposed upward on the upside 26 of the insulating board 22; a light receiving element 40 having a light emitting reflection surface 32 located around the light emitting element 28, for reflecting light emitted from the light emitting electric 28 to the light receiver 24 with a light receiving surface 41 upward disposed on the upside 27 of the insulating board 22; and a light receiving reflective surface 44 located around the light receiving element 40 for reflecting light incident on the light receiver 24 to the light receiver element 40. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、発光素子と受光素子とを対向して設け、その間の空間を物体が通過して光を遮ることにより、物体の有無や位置を検出する透過形フォトインタラプタに関する。   The present invention relates to a transmissive photointerrupter that detects a presence or a position of an object by providing a light-emitting element and a light-receiving element facing each other and blocking the light through the space between the objects.

従来、この種のフォトインタラプタとしては、例えば特許文献1に記載のものが知られている。このフォトインタラプ1は、図10に示すように、発光素子2と、受光素子3と、レンズ部4と、これらの発光素子2、受光素子3およびレンズ部4をその内部に収納して一体化させる遮光性のケース5とから構成されている。前記ケース5は、断面凹形状の溝部6を有する略立体形状であり、内部には前記発光素子2、受光素子3およびレンズ部4を収納する中空部が形成されている。また、前記溝部6の両側面には対向する位置に出射スリット7と入射スリット8が形成されている。   Conventionally, as this type of photo-interrupter, for example, the one described in Patent Document 1 is known. As shown in FIG. 10, the photo interrupt 1 includes a light emitting element 2, a light receiving element 3, a lens unit 4, and the light emitting element 2, the light receiving element 3 and the lens unit 4 housed therein. And a light-shielding case 5 to be formed. The case 5 has a substantially three-dimensional shape having a groove portion 6 having a concave cross section, and a hollow portion for accommodating the light emitting element 2, the light receiving element 3 and the lens portion 4 is formed therein. Further, an exit slit 7 and an entrance slit 8 are formed at opposite positions on both side surfaces of the groove 6.

一方、前記ケース5の中空部内に収納される発光素子2および受光素子3は、それぞれがリードフレーム9,10と、これらリードフレーム9,10に搭載された発光チップ11又は受光チップ12と、これらチップ11,12を被覆する透光性樹脂13,14とで構成され、発光素子2の発光面15と受光素子3の受光面16とが互いに向かい合うように配設されている。また、レンズ部4は発光素子2から放出された光を平行光に近づけるために発光素子2の発光面15上に配置されており、レンズ17と支持台18とを備えている。   On the other hand, the light-emitting element 2 and the light-receiving element 3 housed in the hollow portion of the case 5 are each composed of lead frames 9 and 10, light-emitting chips 11 or light-receiving chips 12 mounted on the lead frames 9 and 10, respectively. The light-emitting surface 15 of the light-emitting element 2 and the light-receiving surface 16 of the light-receiving element 3 are disposed so as to face each other. The lens unit 4 is disposed on the light emitting surface 15 of the light emitting element 2 in order to bring the light emitted from the light emitting element 2 close to parallel light, and includes a lens 17 and a support base 18.

このような構成からなる従来のフォトインタラプタ1にあっては、発光素子2の発光面15から放出された光はレンズ部4によって平行光に近づけられ、出射スリット7及び入射スリット8をすり抜けた光が受光面16を通じて受光素子3に入射される。このとき、ケース5の溝部6を物体が通過して光を遮ると、受光素子3の受光量が変化するので、これによって位置検出を行なうことができる。
特開2001−135852号公報
In the conventional photo interrupter 1 having such a configuration, the light emitted from the light emitting surface 15 of the light emitting element 2 is made close to parallel light by the lens unit 4 and passes through the exit slit 7 and the entrance slit 8. Is incident on the light receiving element 3 through the light receiving surface 16. At this time, if the object passes through the groove 6 of the case 5 and blocks the light, the amount of light received by the light receiving element 3 changes, whereby position detection can be performed.
JP 2001-135852 A

しかしながら、上記従来のフォトインタラプタ1にあっては、発光素子2および受光素子3がケース5とは別々に形成され、これら発光素子2及び受光素子3をケース5の中空部内に差し込んで固定する構造であるため、組込みの工数が掛かるのに加えて、組込み時の誤差などによって製品精度が低下するおそれがあった。また、従来のフォトインタラプタ1にあっては、発光素子2の発光面15と受光素子3の受光面16とが向かい合わせに配置され、発光素子2の正面から放出した光の一部のみを直接出射スリット7からすり抜けさせる構造としているため、発光素子2の正面から放出した光であっても出射スリット7の左右に拡散した光や発光素子2の正面以外から放出された光が有効に利用されず、受光量が少ないことから位置検出の信頼性に影響を及ぼすおそれがあった。   However, in the conventional photo interrupter 1, the light emitting element 2 and the light receiving element 3 are formed separately from the case 5, and the light emitting element 2 and the light receiving element 3 are inserted into the hollow portion of the case 5 and fixed. Therefore, in addition to the time required for assembling, there is a risk that the product accuracy may decrease due to errors during assembling. Further, in the conventional photo interrupter 1, the light emitting surface 15 of the light emitting element 2 and the light receiving surface 16 of the light receiving element 3 are arranged to face each other, and only a part of the light emitted from the front of the light emitting element 2 is directly applied. Since the structure allows the light to pass through the exit slit 7, even if the light is emitted from the front of the light emitting element 2, the light diffused to the left and right of the exit slit 7 and the light emitted from other than the front of the light emitting element 2 are effectively used. In addition, since the amount of received light is small, the reliability of position detection may be affected.

そこで、本発明の目的は、従来のような発光素子や受光素子のケースへの組込み工程をなくして、フォトインタラプタとしての製品精度を高めると共に、発光素子から放出した光を効率的に利用することで発光量及び受光量を増やし、位置検出の信頼性を向上させるフォトインタラプタを提供することである。   Accordingly, an object of the present invention is to eliminate the conventional process of incorporating a light emitting element and a light receiving element into a case, to improve the product accuracy as a photo interrupter, and to efficiently use light emitted from the light emitting element. It is to provide a photo interrupter that increases the light emission amount and the light reception amount and improves the reliability of position detection.

上記課題を解決するために、本発明のフォトインタラプタは、基板と、この基板の上部に左右対向して設けられる発光部及び受光部とを備え、前記発光部が前記基板の上面に発光面を上向きにして配置される発光素子と、この発光素子の周囲に位置し発光素子から放出された光を前記受光部側に反射させる発光側反射面とを有する一方、前記受光部が前記基板の上面に受光面を上向きにして配置される受光素子と、この受光素子の周囲に位置し前記受光部に入射された光を受光素子側に反射させる受光側反射面とを有することを特徴とする。   In order to solve the above-described problems, a photo interrupter of the present invention includes a substrate, and a light emitting unit and a light receiving unit provided on the upper side of the substrate so as to face left and right, and the light emitting unit has a light emitting surface on an upper surface of the substrate. A light emitting element disposed facing upward, and a light emitting side reflecting surface that is located around the light emitting element and reflects light emitted from the light emitting element toward the light receiving part, while the light receiving part is an upper surface of the substrate The light receiving element is arranged with the light receiving surface facing upward, and a light receiving side reflecting surface that is located around the light receiving element and reflects light incident on the light receiving unit to the light receiving element side.

本発明に係るフォトインタラプタによれば、同一基板上に発光素子と受光素子とを配置し、発光面が上向き配置された発光素子から放出した光を発光部の内部で一旦反射させ、この反射光を受光部に導くようにしたので、従来のように発光素子から放出した光をそのまま受光部に導く場合に比べて、受光部内に入射される光の量を増やすことができる。   According to the photo interrupter of the present invention, the light emitting element and the light receiving element are arranged on the same substrate, and the light emitted from the light emitting element having the light emitting surface arranged upward is reflected once inside the light emitting unit, and this reflected light is reflected. Since the light is guided to the light receiving unit, the amount of light incident on the light receiving unit can be increased as compared with the conventional case where the light emitted from the light emitting element is directly guided to the light receiving unit.

また、本発明に係るフォトインタラプタによれば、同一基板上に発光素子と受光素子とを配置し、その上方を樹脂封止することで超小型の表面実装型フォトインタラプタを形成することができる。また、同一基板上に発光部と受光部とを一体に設けることで、高精度且つ高品質のフォトインタラプタが得られることになる。   Further, according to the photointerrupter according to the present invention, an ultra-small surface-mount type photointerrupter can be formed by arranging a light emitting element and a light receiving element on the same substrate and sealing the resin above. In addition, by providing the light emitting unit and the light receiving unit integrally on the same substrate, a high-precision and high-quality photo interrupter can be obtained.

以下図面に基づいて本発明に係るフォトインタラプタの実施形態を詳細に説明する。図1乃至図5は本発明に係るフォトインタラプタの一実施形態を示したもので、図1はフォトインタラプタの全体形状を示す斜視図、図2は図1に示したフォトインタラプタの反射構造をわかり易く表わした説明図、図3は図1に示したフォトインタラプタの平面図、図4は図1においてA−A線に沿って切断した断面図、図5は図1に示したフォトインタラプタの底面図である。   Embodiments of a photo interrupter according to the present invention will be described below in detail with reference to the drawings. 1 to 5 show an embodiment of a photo interrupter according to the present invention. FIG. 1 is a perspective view showing the overall shape of the photo interrupter, and FIG. 2 is an easy-to-understand reflection structure of the photo interrupter shown in FIG. FIG. 3 is a plan view of the photo interrupter shown in FIG. 1, FIG. 4 is a cross-sectional view taken along the line AA in FIG. 1, and FIG. 5 is a bottom view of the photo interrupter shown in FIG. It is.

上記図1乃至図5に示されるように、この実施形態に係るフォトインタラプタ21は、ブロック状の絶縁基板22と、この絶縁基板22の上面に配置された発光部23及び受光部24とを備える。前記絶縁基板22は、断面凹形状の溝部25を中央部分に有する略立体形状であり、溝部25を挟んで左右両側の上面26,27に前記発光部23および受光部24が設けられている。なお、前記上面26,27は同一高さである。   As shown in FIGS. 1 to 5, the photointerrupter 21 according to this embodiment includes a block-shaped insulating substrate 22, and a light emitting unit 23 and a light receiving unit 24 disposed on the upper surface of the insulating substrate 22. . The insulating substrate 22 has a substantially three-dimensional shape having a groove 25 having a concave cross section at the center, and the light emitting part 23 and the light receiving part 24 are provided on the upper surfaces 26 and 27 on both the left and right sides of the groove 25. The upper surfaces 26 and 27 have the same height.

前記発光部23は、前記絶縁基板22の一方の上面26に発光面29を上向きにして配置される発光素子28と、この発光素子28を封止するために絶縁基板22の上面26に形成される透光性樹脂体30と、この透光性樹脂体30の外周面を被覆する遮光性樹脂体31とを有している。発光素子28は、例えば上面に強い発光面を有するチップ状の角形発光ダイオードであり、絶縁基板22の上面26にプリント形成された電極板(図示せず)の上に配置されている。透光性樹脂体30の形状は、特に制約を受けないが、例えば、図2に示したように、発光素子28の上方位置に受光部24側に向かって傾斜面32を有する台形状とすることができる。遮光性樹脂体31は、外形形状が略直方体であり、絶縁基板22の上面26と略同じ形状の底面を有する。また、遮光性樹脂体31と前記透光性樹脂体30との境界面には前記発光素子28から放出した光を効率的に反射する反射面が形成されている。この反射面は少なくとも前記傾斜面32に形成されることが重要であり、発光素子28から放出した光を傾斜面32で反射させて受光部24側に導く。そのためこの傾斜面32の傾斜角度も重要となる。また、発光素子28からは前記発光面29のみならず側面からも放出されるので、それらの光も効果的に反射させるために、前記傾斜面32だけでなく、発光素子28の周囲の面、即ち、透光性樹脂体30の後面33及び左右側面34,35にも反射面を形成することが好ましい。反射面の形成手段としては、例えば、透光性樹脂体30を形成した後、遮光性樹脂体31を形成する前に、透光性樹脂体30の外周面に反射率の高い塗膜や蒸着膜を形成したり、あるいは遮光性樹脂体31を赤外線反射率の高い樹脂材料で形成する。前記透光性樹脂体30及び遮光性樹脂体31の樹脂材料は特に制約を受けることがない。例えば、透光性樹脂体30の樹脂材料としては、透明エポキシや透明シリコンなどを用いることができ、遮光性樹脂体31としては、酸化チタン入りエポキシなどを用いることができる。   The light emitting portion 23 is formed on the upper surface 26 of the insulating substrate 22 to seal the light emitting device 28 and the light emitting device 28 disposed on one upper surface 26 of the insulating substrate 22 with the light emitting surface 29 facing upward. A translucent resin body 30 and a light-shielding resin body 31 covering the outer peripheral surface of the translucent resin body 30. The light emitting element 28 is, for example, a chip-shaped square light emitting diode having a strong light emitting surface on the upper surface, and is disposed on an electrode plate (not shown) printed on the upper surface 26 of the insulating substrate 22. The shape of the translucent resin body 30 is not particularly limited. For example, as shown in FIG. 2, the translucent resin body 30 has a trapezoidal shape having an inclined surface 32 toward the light receiving unit 24 at a position above the light emitting element 28. be able to. The light-shielding resin body 31 has a substantially rectangular parallelepiped shape, and has a bottom surface having substantially the same shape as the top surface 26 of the insulating substrate 22. In addition, a reflection surface that efficiently reflects the light emitted from the light emitting element 28 is formed on the boundary surface between the light shielding resin body 31 and the translucent resin body 30. It is important that the reflecting surface is formed at least on the inclined surface 32, and the light emitted from the light emitting element 28 is reflected by the inclined surface 32 and guided to the light receiving unit 24 side. Therefore, the inclination angle of the inclined surface 32 is also important. Further, since the light emitting element 28 emits not only from the light emitting surface 29 but also from the side surface, not only the inclined surface 32 but also the surrounding surface of the light emitting element 28 in order to reflect the light effectively. That is, it is preferable to form reflective surfaces on the rear surface 33 and the left and right side surfaces 34 and 35 of the translucent resin body 30. As a means for forming the reflective surface, for example, after forming the translucent resin body 30, and before forming the light-shielding resin body 31, a coating film or vapor deposition with high reflectivity is formed on the outer peripheral surface of the translucent resin body 30. A film is formed, or the light-shielding resin body 31 is formed of a resin material having a high infrared reflectance. The resin material of the translucent resin body 30 and the light-shielding resin body 31 is not particularly restricted. For example, as the resin material of the translucent resin body 30, transparent epoxy, transparent silicon, or the like can be used, and as the light-shielding resin body 31, epoxy containing titanium oxide or the like can be used.

この実施形態において、前記遮光性樹脂体31の溝部25側の前面36には前記傾斜面32などで反射した光を受光部24側に出射するための出射部として、例えば出射スリット37が形成されている。この出射スリット37は、前記前面36の略中央部に縦方向に形成されるもので、スリット表面には前記透光性樹脂体30の一部が露出している。   In this embodiment, for example, an exit slit 37 is formed on the front surface 36 of the light shielding resin body 31 on the groove portion 25 side as an exit portion for emitting the light reflected by the inclined surface 32 or the like to the light receiving portion 24 side. ing. The exit slit 37 is formed in a vertical direction at a substantially central portion of the front surface 36, and a part of the translucent resin body 30 is exposed on the slit surface.

一方、受光部24は、前記絶縁基板22の溝部25を挟んで発光部23と対向する位置に設けられ、絶縁基板22の他方の上面27に受光面41を上向きにして配置される受光素子40と、この受光素子40を封止するために絶縁基板22の上面27に形成される透光性樹脂体42と、この透光性樹脂体42の外周面を被覆する遮光性樹脂体43とを有している。受光素子40は、例えば上面に受光面41を有するチップ状のフォトトランジスタであり、前記発光ダイオードと同様、絶縁基板22の上面にプリント形成された電極板(図示せず)の上に配置されている。透光性樹脂体42の形状は、受光素子40の上方位置に設けられる傾斜面44が発光素子28側に傾斜し、この傾斜面44、後面45及び左右側面46,47が反射面として形成されている以外は、前記発光部23側の透光性樹脂体30と同様の構成からなるので、ここでは詳細な説明を省略する。また、遮光性樹脂体43及びこの遮光性樹脂体43の溝部25側の前面48に形成される光の入射部としての入射スリット49も発光部23側と同様の構成からなるので、ここでは詳細な説明を省略する。   On the other hand, the light receiving unit 24 is provided at a position facing the light emitting unit 23 with the groove 25 of the insulating substrate 22 interposed therebetween, and the light receiving element 40 is disposed on the other upper surface 27 of the insulating substrate 22 with the light receiving surface 41 facing upward. A light-transmitting resin body 42 formed on the upper surface 27 of the insulating substrate 22 for sealing the light-receiving element 40, and a light-blocking resin body 43 covering the outer peripheral surface of the light-transmitting resin body 42. Have. The light receiving element 40 is, for example, a chip-like phototransistor having a light receiving surface 41 on the upper surface, and is disposed on an electrode plate (not shown) printed on the upper surface of the insulating substrate 22 like the light emitting diode. Yes. The shape of the translucent resin body 42 is such that an inclined surface 44 provided above the light receiving element 40 is inclined toward the light emitting element 28, and the inclined surface 44, the rear surface 45, and the left and right side surfaces 46 and 47 are formed as reflecting surfaces. Since it consists of the same structure as the translucent resin body 30 by the side of the said light emission part 23 except being, detailed description is abbreviate | omitted here. In addition, since the light-shielding resin body 43 and the incident slit 49 as the light incident part formed on the front surface 48 on the groove part 25 side of the light-shielding resin body 43 have the same configuration as that of the light emitting part 23 side, the details here. The detailed explanation is omitted.

この実施形態にあっては、図3に示されるように、前記発光部23の発光素子28、出射スリット37と、受光部24の受光素子40、入射スリット49とが、一本の直線50上に位置している。また、図5に示されるように、絶縁基板22の下面には図3で示したマザーボード51の上面プリント配線(図示せず)に表面実装するための接続電極52a〜52dが四隅に設けられ、この接続電極52a〜52dは絶縁基板22の側面電極53a〜53dを介して前記発光素子28及び受光素子40が配置される電極板(図示せず)と導通している。   In this embodiment, as shown in FIG. 3, the light emitting element 28 and the exit slit 37 of the light emitting section 23, and the light receiving element 40 and the entrance slit 49 of the light receiving section 24 are on a single straight line 50. Is located. Further, as shown in FIG. 5, connection electrodes 52a to 52d for surface mounting on the upper surface printed wiring (not shown) of the mother board 51 shown in FIG. The connection electrodes 52 a to 52 d are electrically connected to an electrode plate (not shown) on which the light emitting element 28 and the light receiving element 40 are disposed via the side electrodes 53 a to 53 d of the insulating substrate 22.

次に、上記構成からなるフォトインタラプタ21の作用について説明する。図4に示すように、発光素子28の発光面29から放出された光は、透光性樹脂体30の傾斜面32で受光部24側に反射され、この反射光が出射スリット37及び入射スリット49をすり抜けて受光部24内に入射される。受光部24内に入射された光は、透光性樹脂体42の傾斜面44で下向きに反射され、そのまま受光素子40の受光面41に入射される。この時、フォトインタラプタ21の溝部25を物体が通過して光を遮ると、受光素子40の受光量が変化するので、これによって位置検出を行なうことができる。   Next, the operation of the photo interrupter 21 having the above configuration will be described. As shown in FIG. 4, the light emitted from the light emitting surface 29 of the light emitting element 28 is reflected to the light receiving unit 24 side by the inclined surface 32 of the translucent resin body 30, and the reflected light is emitted from the exit slit 37 and the entrance slit. The light passes through 49 and enters the light receiving unit 24. The light incident in the light receiving unit 24 is reflected downward by the inclined surface 44 of the translucent resin body 42 and is directly incident on the light receiving surface 41 of the light receiving element 40. At this time, if an object passes through the groove portion 25 of the photo interrupter 21 and blocks light, the amount of light received by the light receiving element 40 changes, so that position detection can be performed.

前記発光部23の傾斜面32は、図2に示されるように、出射スリット37に対応した狭い部分だけでなく傾斜面32全体が反射面として形成されている他、透光性樹脂体30の後面33及び左右側面34,35も反射面として形成されているために、発光素子28の上面のみならず側面から放出した光も周囲の反射面によって反射されるので、発光部23内での光量が増え、これらが強い光となって出射スリット37からすり抜けていく。一方、入射スリット49に導かれて受光部24内に入射された光も、前記発光部23と同様、透光性樹脂体42の傾斜面44のみならず外周面全体が反射面として形成されているので、受光素子40の受光面41には強い光が入射されることになり、発光部23のみならず受光部24でも光の反射を効率的に利用して受光量を増やすことができ、検出精度を向上させることができる。   As shown in FIG. 2, the inclined surface 32 of the light emitting portion 23 is not only a narrow portion corresponding to the exit slit 37 but also the entire inclined surface 32 is formed as a reflective surface, Since the rear surface 33 and the left and right side surfaces 34 and 35 are also formed as reflecting surfaces, the light emitted from the side surfaces as well as the upper surface of the light emitting element 28 is reflected by the surrounding reflecting surfaces. And these become strong light and pass through the exit slit 37. On the other hand, not only the inclined surface 44 of the translucent resin body 42 but also the entire outer peripheral surface of the light guided to the incident slit 49 and incident into the light receiving unit 24 is formed as a reflecting surface, as in the light emitting unit 23. Therefore, strong light is incident on the light receiving surface 41 of the light receiving element 40, and not only the light emitting unit 23 but also the light receiving unit 24 can efficiently use the reflection of light to increase the amount of received light. Detection accuracy can be improved.

本実施形態に係るフォトインタラプタ21によれば、発光素子28の発光面29と受光素子40の受光面41とを対向させることなく、ともに上向きに配置している。そうすることで、上記した反射光の効率的な利用の他に、同じ基板上に両方の素子を配置し、その上方を樹脂封止した構造とすることで、表面実装可能な超小型のフォトインタラプタ21の形成が可能となる。   According to the photo interrupter 21 according to the present embodiment, the light emitting surface 29 of the light emitting element 28 and the light receiving surface 41 of the light receiving element 40 are both arranged upward without facing each other. By doing so, in addition to the efficient use of reflected light as described above, both elements are arranged on the same substrate, and the upper part is made of resin-sealed structure, so that it can be mounted on the surface of a microminiature photo. The interrupter 21 can be formed.

図6及び図7は、本発明に係るフォトインタラプタの第2の実施形態を示したものである。この実施形態に係るフォトインタラプタ61は、発光部63に形成される発光側反射面及び受光部64に形成される受光側反射面が、いずれも透光性樹脂体30,42の外周面に形成された湾曲面65,66によって構成されている。この湾曲面65,66はこの実施形態では発光素子28及び受光素子40のそれぞれ上方から後方にかけて湾曲する円筒体の1/4形状であるが、たとえば左右側面も湾曲したドーム型の一部形状であってもよい。このように、反射面を湾曲面65,66として形成することで、発光部63では湾曲面65で反射させた光を出射スリット37付近に集光し易くなり、一方の受光部64では入射スリット49から入射された光を湾曲面66によって受光素子40に集光し易い構造となる。なお、透光性樹脂体30,42の左右側面を反射面として形成すれば、さらに反射効率がよくなる。この実施形態に係るフォトインタラプタ61は、前述の湾曲状の反射面を除いた構成が、前記第1の実施形態とほぼ同じなので、それら共通する構成については同一の符号を付して詳細な説明は省略する。   6 and 7 show a second embodiment of the photo-interrupter according to the present invention. In the photo interrupter 61 according to this embodiment, the light emitting side reflecting surface formed on the light emitting unit 63 and the light receiving side reflecting surface formed on the light receiving unit 64 are both formed on the outer peripheral surface of the translucent resin bodies 30 and 42. The curved surfaces 65 and 66 are formed. In this embodiment, the curved surfaces 65 and 66 have a quarter shape of a cylindrical body that curves from above to the rear of the light emitting element 28 and the light receiving element 40 respectively. There may be. In this manner, by forming the reflecting surfaces as the curved surfaces 65 and 66, the light reflected by the curved surface 65 can be easily collected in the vicinity of the emission slit 37 in the light emitting portion 63, and the incident slit in the one light receiving portion 64. The light incident from 49 is easily condensed on the light receiving element 40 by the curved surface 66. In addition, if the right and left side surfaces of the translucent resin bodies 30 and 42 are formed as reflection surfaces, the reflection efficiency is further improved. The photo interrupter 61 according to this embodiment has the same configuration as that of the first embodiment except for the above-described curved reflecting surface. Is omitted.

図8及び図9は、本発明に係るフォトインタラプタの第3の実施形態を示したものである。この実施形態に係るフォトインタラプタ71は、発光部73に形成される発光側反射面及び受光部74に形成される受光側反射面が、いずれも透光性樹脂体30,42の外周面に形成された平面状の上面75,76及び後面77,78として構成されている。即ち、前記実施形態のように、傾斜面や湾曲面を形成することなく、透光性樹脂体30,42の外周面を平面状に形成しただけの反射面である。しかし、このような平面状の反射面であっても、発光素子28から放出した光は、一旦上面75や後面77に反射されてから出射スリット37からすり抜けていくので、上記実施形態と同様の反射効果が得られることになる。なお、透光性樹脂体30,42の左右側面を反射面として形成すれば、さらに反射効率がよくなることは言うまでもない。この実施形態に係るフォトインタラプタ71は、前述の平面状の反射面を除いた構成が、前記第1の実施形態とほぼ同じなので、それら共通する構成については同一の符号を付して詳細な説明は省略する。   8 and 9 show a third embodiment of the photo-interrupter according to the present invention. In the photo interrupter 71 according to this embodiment, the light emitting side reflecting surface formed on the light emitting unit 73 and the light receiving side reflecting surface formed on the light receiving unit 74 are both formed on the outer peripheral surface of the translucent resin bodies 30 and 42. The flat upper surfaces 75 and 76 and the rear surfaces 77 and 78 are formed. That is, as in the above-described embodiment, it is a reflection surface in which the outer peripheral surfaces of the translucent resin bodies 30 and 42 are formed in a flat shape without forming an inclined surface or a curved surface. However, even with such a planar reflecting surface, the light emitted from the light emitting element 28 is once reflected by the upper surface 75 and the rear surface 77 and then passes through the exit slit 37, so that the same as in the above embodiment. A reflection effect is obtained. Needless to say, if the left and right side surfaces of the translucent resin bodies 30 and 42 are formed as reflection surfaces, the reflection efficiency is further improved. Since the configuration of the photo interrupter 71 according to this embodiment is substantially the same as that of the first embodiment except for the above-described planar reflection surface, the same configurations are denoted by the same reference numerals and detailed description will be given. Is omitted.

本発明の第1実施形態に係るフォトインタラプタの全体形状を示す斜視図である。It is a perspective view showing the whole photo interrupter shape concerning a 1st embodiment of the present invention. 前記図1に示したフォトインタラプタの反射構造をわかり易く表わした説明図である。It is explanatory drawing which represented the reflection structure of the photo interrupter shown in the said FIG. 1 intelligibly. 前記図1に示したフォトインタラプタの平面図である。FIG. 2 is a plan view of the photo interrupter shown in FIG. 1. 前記図1においてA−A線に沿って切断した断面図である。It is sectional drawing cut | disconnected along the AA line in the said FIG. 前記図1に示したフォトインタラプタの底面図である。FIG. 2 is a bottom view of the photo interrupter shown in FIG. 1. 本発明の第2実施形態に係るフォトインタラプタの反射構造をわかり易く表わした説明図である。It is explanatory drawing showing the reflection structure of the photo interrupter which concerns on 2nd Embodiment of this invention clearly. 前記図6においてB−B線に沿って切断した断面図である。It is sectional drawing cut | disconnected along the BB line in the said FIG. 本発明の第3実施形態に係るフォトインタラプタの反射構造をわかり易く表わした説明図である。It is explanatory drawing showing the reflection structure of the photo interrupter which concerns on 3rd Embodiment of this invention clearly. 前記図8においてC−C線に沿って切断した断面図である。It is sectional drawing cut | disconnected along CC line in the said FIG. 従来におけるフォトインタラプタの一例を示す断面図である。It is sectional drawing which shows an example of the conventional photo interrupter.

符号の説明Explanation of symbols

21 フォトインタラプタ
22 絶縁基板
23 発光部
24 受光部
25 溝部
26,27 絶縁基板の上面
28 発光素子
29 発光面
30 発光部の透光性樹脂体
31 発光部の遮光性樹脂体
32 傾斜面(発光側反射面)
37 出射スリット(出射部)
40 受光素子
41 受光面
42 受光部の透光性樹脂体
43 受光部の遮光性樹脂体
44 傾斜面(受光側反射面)
49 入射スリット(入射部)
51 マザーボード
52a〜52d 基板下面の接続電極
53a〜53d 基板の側面電極
21 Photo interrupter 22 Insulating substrate 23 Light emitting portion 24 Light receiving portion 25 Groove portion 26, 27 Upper surface of insulating substrate 28 Light emitting element 29 Light emitting surface 30 Translucent resin body of light emitting portion 31 Light blocking resin body of light emitting portion 32 Inclined surface (light emitting side) Reflective surface)
37 Outgoing slit (outgoing part)
40 Light-receiving element 41 Light-receiving surface 42 Translucent resin body of light-receiving portion 43 Light-shielding resin body of light-receiving portion 44 Inclined surface (light-receiving side reflecting surface)
49 Incident slit (incident part)
51 Motherboards 52a to 52d Connection electrodes on the lower surface of the substrate 53a to 53d Side electrodes of the substrate

Claims (11)

基板と、
この基板の上部に左右対向して設けられる発光部及び受光部とを備え、
前記発光部が前記基板の上面に発光面を上向きにして配置される発光素子と、
この発光素子の周囲に位置し発光素子から放出された光を前記受光部側に反射させる発光側反射面とを有する一方、
前記受光部が前記基板の上面に受光面を上向きにして配置される受光素子と、
この受光素子の周囲に位置し前記受光部に入射された光を受光素子側に反射させる受光側反射面とを有することを特徴とするフォトインタラプタ。
A substrate,
A light emitting portion and a light receiving portion provided on the upper part of the substrate so as to face left and right,
A light emitting device in which the light emitting unit is disposed on the upper surface of the substrate with the light emitting surface facing upward;
While having a light emitting side reflecting surface that is located around the light emitting element and reflects light emitted from the light emitting element to the light receiving unit side,
A light receiving element in which the light receiving portion is disposed on the upper surface of the substrate with the light receiving surface facing upward;
A photointerrupter having a light-receiving-side reflecting surface positioned around the light-receiving element and reflecting light incident on the light-receiving portion toward the light-receiving element.
前記発光部が発光素子を封止する透光性樹脂体と、この透光性樹脂体の外周面を被覆する遮光性樹脂体とを備え、これら透光性樹脂体と遮光性樹脂体との境界面に前記発光側反射面が形成されると共に、前記遮光性樹脂体の前記受光部に対向する面には光の出射部が形成されてなる請求項1記載のフォトインタラプタ。   The light-emitting unit includes a light-transmitting resin body that seals the light-emitting element, and a light-blocking resin body that covers an outer peripheral surface of the light-transmitting resin body, and includes the light-transmitting resin body and the light-blocking resin body. 2. The photo interrupter according to claim 1, wherein the light emitting side reflecting surface is formed on the boundary surface, and a light emitting portion is formed on a surface of the light shielding resin body facing the light receiving portion. 前記受光部が受光素子を封止する透光性樹脂体と、この透光性樹脂体の外周面を被覆する遮光性樹脂体とを備え、これら透光性樹脂体と遮光性樹脂体との境界面に前記受光側反射面が形成されると共に、前記遮光性樹脂体の前記発光部に対向する面には光の入射部が形成されてなる請求項1記載のフォトインタラプタ。   The light-receiving unit includes a light-transmitting resin body that seals the light-receiving element, and a light-blocking resin body that covers an outer peripheral surface of the light-transmitting resin body, and includes the light-transmitting resin body and the light-blocking resin body. 2. The photointerrupter according to claim 1, wherein the light-receiving side reflection surface is formed on a boundary surface, and a light incident portion is formed on a surface of the light-shielding resin body facing the light-emitting portion. 前記出射部及び入射部が発光素子及び受光素子を含めて同一線上に配置されている請求項2又は3に記載のフォトインタラプタ。   The photointerrupter according to claim 2 or 3, wherein the emitting part and the incident part are arranged on the same line including the light emitting element and the light receiving element. 前記出射部及び入射部がそれぞれスリットである請求項2又は3に記載のフォトインタラプタ。 The photointerrupter according to claim 2 or 3, wherein each of the emitting part and the incident part is a slit. 前記発光側反射面が前記発光素子の上方において受光部側に傾斜する傾斜面である請求項1記載のフォトインタラプタ。   2. The photo interrupter according to claim 1, wherein the light emitting side reflecting surface is an inclined surface that is inclined above the light emitting element toward the light receiving unit. 前記受光側反射面が前記受光素子の上方において発光部側に傾斜する傾斜面である請求項1記載のフォトインタラプタ。   2. The photointerrupter according to claim 1, wherein the light receiving side reflecting surface is an inclined surface that is inclined above the light receiving element toward the light emitting unit. 前記発光側反射面が前記発光素子の上方から後方にかけて受光部側に湾曲する湾曲面である請求項1記載のフォトインタラプタ。   2. The photointerrupter according to claim 1, wherein the light emitting side reflecting surface is a curved surface that curves toward the light receiving part side from above to behind the light emitting element. 前記受光側反射面が前記受光素子の上方から後方にかけて発光部側に湾曲する傾斜面である請求項1記載のフォトインタラプタ。   2. The photointerrupter according to claim 1, wherein the light-receiving-side reflecting surface is an inclined surface that curves toward the light-emitting portion side from above to behind the light-receiving element. 前記基板がブロック状に形成され、前記発光部及び受光部が設けられる左右両側の上面に対して中央部分の上面が凹設され、発光部と受光部との間に溝部が形成されてなる請求項1記載のフォトインタラプタ。   The substrate is formed in a block shape, the upper surface of the central portion is recessed with respect to the upper surfaces of the left and right sides where the light emitting unit and the light receiving unit are provided, and a groove is formed between the light emitting unit and the light receiving unit. Item 1. A photo interrupter according to item 1. 前記発光部及び受光部が配置される基板の上面と、マザーボードに表面実装される基板の下面とにそれぞれ接続電極が形成され、これら上下の接続電極が基板の側面電極によって導通されている請求項1記載のフォトインタラプタ。   A connection electrode is formed on each of an upper surface of a substrate on which the light emitting unit and the light receiving unit are disposed and a lower surface of a substrate surface-mounted on a mother board, and the upper and lower connection electrodes are electrically connected by side electrodes of the substrate. The photo interrupter according to 1.
JP2004337843A 2004-11-22 2004-11-22 Photo interrupter Pending JP2006147944A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100006905A (en) * 2008-07-10 2010-01-22 카오스 (주) Transmission type photo interrupter
KR100995913B1 (en) 2008-02-29 2010-11-22 광전자 주식회사 Photo interrupter and manufacturing method thereof
CN101447525B (en) * 2007-11-21 2010-12-15 株式会社东芝 Interrupter
TWI557931B (en) * 2014-03-15 2016-11-11 Omron Tateisi Electronics Co Light sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447525B (en) * 2007-11-21 2010-12-15 株式会社东芝 Interrupter
KR100995913B1 (en) 2008-02-29 2010-11-22 광전자 주식회사 Photo interrupter and manufacturing method thereof
KR20100006905A (en) * 2008-07-10 2010-01-22 카오스 (주) Transmission type photo interrupter
TWI557931B (en) * 2014-03-15 2016-11-11 Omron Tateisi Electronics Co Light sensor

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