JP2014067740A - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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JP2014067740A
JP2014067740A JP2012209709A JP2012209709A JP2014067740A JP 2014067740 A JP2014067740 A JP 2014067740A JP 2012209709 A JP2012209709 A JP 2012209709A JP 2012209709 A JP2012209709 A JP 2012209709A JP 2014067740 A JP2014067740 A JP 2014067740A
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optical semiconductor
lead
substrate
semiconductor device
resin
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Shigekazu Kato
茂和 加藤
Kaori Namioka
かおり 波岡
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

PROBLEM TO BE SOLVED: To provide a side-view type optical semiconductor device that can be prevented from being mounted in a tilted condition in a mounted substrate caused by surface tension of melted solder upon solder-mounting the semiconductor device in the substrate in a solder reflow process, without requiring an additional new member and by an easily-manufactured structure.SOLUTION: The optical semiconductor device is configured in a rectangular shape having a structure in which an optical semiconductor element 30 and a bonding wire 31 are encapsulated by resin by die-bonding the optical semiconductor element 30 to a first lead 19 and bonding the bonding wire 31 to a second lead 20, of a package in which the first lead 19 and the second lead 20 are integrated by a resin part 51, and by filling a region surrounded by the resin part 51 with an encapsulation resin 32 having light transmissivity. An electrode part 18a of the first lead 19 and an electrode part 18b of the second lead 20 are protruded from the rectangular shape at a position above a lower surface of the resin part 51.

Description

本発明は、光半導体装置に関するものであり、詳しくは、基板実装時のはんだリフロー工程において、溶融したはんだ（溶融はんだ）の表面張力によって実装基板の実装面に対して傾いた状態で実装されることがないような構造を備えたサイドビュータイプの光半導体装置に関する。   The present invention relates to an optical semiconductor device, and more specifically, in a solder reflow process at the time of board mounting, mounting is performed in a state inclined with respect to the mounting surface of the mounting board by the surface tension of molten solder (molten solder). The present invention relates to a side view type optical semiconductor device having such a structure.

従来、この種の光半導体装置としては、例えば、特開平１０−１０７３２６号公報（特許文献１）に側面発光型ＬＥＤランプとして開示されたものがある。それは、図２４に示すように、チップ搭載用基板８１の一方の面にＬＥＤチップ８２が搭載されると共にそのＬＥＤチップ８２を覆うように透光性のモールド８３が設けられ、チップ搭載用基板８１の、ＬＥＤチップ８２を覆う透光性のモールド８３が設けられた側の反対側に該透光性のモールド８３と略等価なバランス用のモールド８４が設けられている。   Conventionally, as this type of optical semiconductor device, for example, there is one disclosed in Japanese Patent Application Laid-Open No. 10-107326 (Patent Document 1) as a side-emitting LED lamp. As shown in FIG. 24, an LED chip 82 is mounted on one surface of a chip mounting substrate 81 and a translucent mold 83 is provided so as to cover the LED chip 82. On the side opposite to the side where the translucent mold 83 covering the LED chip 82 is provided, a balance mold 84 substantially equivalent to the translucent mold 83 is provided.

側面発光型ＬＥＤランプ８０をこのような構造とすることにより、ＬＥＤランプ実装用基板８５に側面発光型ＬＥＤランプ８０をはんだリフローによってはんだ実装する場合に、側面発光型ＬＥＤランプ８０は、はんだリフロー時の溶融はんだの表面張力が加わってもチップ搭載用基板８１の両側に設けられたモールド８３、８４によってＬＥＤランプ実装用基板８５のＬＥＤランプ実装面８６に対する傾きを防止することがでる。   With the side-emitting LED lamp 80 having such a structure, when the side-emitting LED lamp 80 is solder-mounted on the LED lamp mounting substrate 85 by solder reflow, the side-emitting LED lamp 80 is subjected to solder reflow. Even when the surface tension of the molten solder is applied, the molds 83 and 84 provided on both sides of the chip mounting substrate 81 can prevent the LED lamp mounting substrate 85 from being inclined with respect to the LED lamp mounting surface 86.

また、他の従来例として、特開２０１２−９９７３７号公報（特許文献２）にサイドビュー型半導体発光装置として開示されたものもある。それは、図２５（（ａ）、（ｂ））に示すように、ＬＥＤ素子が搭載されると共に該ＬＥＤ素子に電気的に接続された内部電極パターン９１が形成されたＬＥＤ素子搭載基板９２のＬＥＤ素子搭載面に、ＬＥＤ素子からの出射光が通過する開口９３を有するリフレクタ基板９４が貼着され、ＬＥＤ素子搭載基板９２のＬＥＤ素子搭載面の反対面に、ＬＥＤ素子搭載基板９２の少なくとも外部電極パターン９５が露出する形状で且つ底面９６がリフレクタ基板９４の下面９７と面一となる突起部９８と該突起部９８同士を繋ぐ梁部９９を備えたストッパ基板１００が貼着されている。   As another conventional example, there is one disclosed in Japanese Patent Application Laid-Open No. 2012-99737 (Patent Document 2) as a side view type semiconductor light emitting device. As shown in FIG. 25 ((a), (b)), an LED of an LED element mounting substrate 92 on which an LED element is mounted and an internal electrode pattern 91 electrically connected to the LED element is formed. A reflector substrate 94 having an opening 93 through which light emitted from the LED element passes is attached to the element mounting surface, and at least an external electrode of the LED element mounting substrate 92 is opposite to the LED element mounting surface of the LED element mounting substrate 92. A stopper substrate 100 having a shape in which the pattern 95 is exposed and a bottom surface 96 that is flush with the lower surface 97 of the reflector substrate 94 and a beam portion 99 that connects the projections 98 is attached.

これにより、図２５（ｃ）に示すように、サイドビュー型半導体発光装置９０を発光装置実装用基板１０１にはんだ実装したときに、ＬＥＤ素子が搭載されたＬＥＤ素子搭載基板９２が溶融はんだ１０２の表面張力によって発光装置実装用基板１０１側に引っ張られても、突起部９８の底面９６及びリフレクタ基板９４の下面９７が発光装置実装用基板１０１の電極パッド１０３の上面１０４に当接することによりサイドビュー型半導体発光装置９０が発光装置実装用基板１０１の発光装置実装面１０５に対して傾くことを防止することができる。   Thus, as shown in FIG. 25C, when the side-view type semiconductor light emitting device 90 is solder-mounted on the light-emitting device mounting substrate 101, the LED element mounting substrate 92 on which the LED elements are mounted is the molten solder 102. Even when the light emitting device mounting substrate 101 is pulled by the surface tension, the bottom surface 96 of the projection 98 and the lower surface 97 of the reflector substrate 94 abut on the upper surface 104 of the electrode pad 103 of the light emitting device mounting substrate 101. The type semiconductor light emitting device 90 can be prevented from being inclined with respect to the light emitting device mounting surface 105 of the light emitting device mounting substrate 101.

特開平１０−１０７３２６号公報Japanese Patent Laid-Open No. 10-107326 特開２０１２−９９７３７号公報JP 2012-99737 A

ところで、上記特許文献１においては、ＬＥＤランプ実装用基板８５に側面発光型ＬＥＤランプ８０をはんだリフローによってはんだ実装するにあたり、ＬＥＤランプ実装用基板８５のＬＥＤランプ実装面８６に対する側面発光型ＬＥＤランプ８０の傾きを防止するために、チップ搭載用基板８１の、ＬＥＤチップ８２を覆う透光性のモールド８３が設けられた側の反対側に該透光性のモールド８３と略等価なバランス用のモールド８４を特別に設けている。   By the way, in Patent Document 1, when the side-emitting LED lamp 80 is solder mounted on the LED lamp mounting substrate 85 by solder reflow, the side-emitting LED lamp 80 with respect to the LED lamp mounting surface 86 of the LED lamp mounting substrate 85 is used. In order to prevent tilting of the chip, a balance mold that is substantially equivalent to the translucent mold 83 is provided on the opposite side of the chip mounting substrate 81 from the side where the translucent mold 83 that covers the LED chip 82 is provided. 84 is specially provided.

また、上記特許文献２においては、同様に、発光装置実装用基板１０１にサイドビュー型半導体発光装置９０をはんだリフローによってはんだ実装するにあたり、サイドビュー型半導体発光装置９０が発光装置実装用基板１０１の発光装置実装面１０５に対して傾くことを防止するために、サイドビュー型半導体発光装置９０に突起部９８を有するストッパ基板１００を特別に設けている。   Similarly, in Patent Document 2, when the side-view type semiconductor light emitting device 90 is solder mounted on the light emitting device mounting substrate 101 by solder reflow, the side view type semiconductor light emitting device 90 is mounted on the light emitting device mounting substrate 101. In order to prevent tilting with respect to the light emitting device mounting surface 105, the side-view type semiconductor light emitting device 90 is specially provided with a stopper substrate 100 having a protrusion 98.

このように、特許文献１の側面発光型ＬＥＤランプ及び特許文献２のサイドビュー型半導体発光装置はいずれも、はんだ実装時の溶融はんだの表面張力によって実装基板の実装面に対して傾いた状態で実装されるのを防止するために、傾き防止用の特別な部材を必要としている。その結果、新たな部材の追加により製造コストのコストアップを招くことになる。   As described above, both the side-emitting LED lamp of Patent Document 1 and the side-view type semiconductor light-emitting device of Patent Document 2 are inclined with respect to the mounting surface of the mounting substrate due to the surface tension of the molten solder at the time of solder mounting. In order to prevent mounting, a special member for preventing tilting is required. As a result, the addition of a new member leads to an increase in manufacturing cost.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、新たな部材の追加を必要とすることなく且つ製造が容易な構造によって、はんだリフロー工程におけるはんだ実装時に、溶融はんだの表面張力によって実装基板に対して傾いた状態で実装されることがないサイドビュータイプの光半導体装置を提供することにある。   Therefore, the present invention was devised in view of the above problems, and the object of the present invention is to provide a structure that is easy to manufacture without requiring addition of a new member, and at the time of solder mounting in the solder reflow process. It is an object of the present invention to provide a side view type optical semiconductor device that is not mounted in a tilted state with respect to a mounting substrate due to surface tension of molten solder.

上記課題を解決するために、本発明の請求項１に記載された発明は、光入出射面に対向する位置に該光入出射面と平行に位置する平板状のダイボンディング部と、前記ダイボンディング部の一端部から前記光入出射面方向に直角に折曲されて、基板実装時に基板と対向する側の基板対向面に対向する位置に該基板対向面と平行に位置する第１の側板部を有する第１のリードと、前記光入出射面に対向する位置に前記第ダイボンディング部と同一平面上に並設された平板状のワイヤボンディング部と、前記ワイヤボンディング部の一端部から前記光入出射面方向に直角に折曲されて、前記基板対向面に対向する位置に前記第１の側板部と同一平面上に並設された第２の側板部を有する第２のリードと、前記第１のリードの前記ダイボンディング部の内面の一部及び外面と前記第１の側板部の外面、及び、前記第２のリードの前記ワイヤボンディング部の内面の一部及び外面と前記第２の側板部の外面の夫々を除く部分を、前記第１のリード及び前記第２のリードに沿って一体に覆う樹脂部と、前記ダイボンディング部の表面の前記樹脂部から露出した部分にダイボンディングされた光半導体素子と、前記光半導体素子の電極と前記ワイヤボンディング部の表面の前記樹脂部から露出した部分を接続するボンディングワイヤと、前記樹脂部で囲まれた領域を満たす、絶縁性及び透光性を有する封止樹脂と、を備え、前記第１のリードは、前記ダイボンディング部の前記一端部の対向位置に位置する他端部から前記光入出射面と反対方向に直角に折曲突出された第１の背面電極部、及び／又は、前記第１の側壁部の端部から前記光入出射面と隣接し且つ前記基板対向面に垂直な面に沿って該基板対向面方向に直角に折曲されて外面を除く部分が前記樹脂部に一体に覆われる側面部と、前記側面部の端部から該基板対向面方向に水平に折曲げられ突出する第１の側面電極部を有し、前記第２のリードは、前記ワイヤボンディング部の前記一端部の対向位置に位置する他端部から前記光入出射面と反対方向に直角に折曲突出された第２の背面電極部、及び／又は、前記第２の側壁部の端部から前記光入出射面と隣接し且つ前記基板対向面に垂直な面に沿って該基板対向面方向に直角に折曲されて外面を除く部分が前記樹脂部に一体に覆われる側面部と、前記側面部の端部から該基板対向面方向に水平に折曲げられ突出する第２の側面
電極部を有し、前記第１の背面電極部、前記第２の背面電極部、前記第１の側面電極部及び前記第２の側面電極部は夫々前記基板対向面から該基板対向面の垂直方向の前記光半導体素子側に所定の距離を置いた位置に位置していることを特徴とするものである。 In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention is a flat die bonding portion positioned in parallel to the light incident / exit surface at a position facing the light incident / exit surface, and the die A first side plate that is bent at a right angle from the one end portion of the bonding portion in the direction of the light incident / exiting surface and is positioned parallel to the substrate facing surface at a position facing the substrate facing surface on the side facing the substrate when mounted on the substrate A first lead having a portion, a flat wire bonding portion arranged on the same plane as the first die bonding portion at a position facing the light incident / exit surface, and one end portion of the wire bonding portion from the one end portion A second lead having a second side plate portion that is bent at a right angle to the light incident / exit surface direction and is arranged in parallel with the first side plate portion at a position facing the substrate facing surface; The die bonding of the first lead A portion excluding a part and outer surface of the inner surface and the outer surface of the first side plate portion, and a portion of the inner surface of the wire bonding portion and the outer surface of the second lead and the outer surface of the second side plate portion. A resin portion that integrally covers the first lead and the second lead, an optical semiconductor element die-bonded to a portion of the surface of the die bonding portion exposed from the resin portion, and the optical semiconductor A bonding wire that connects an electrode of the element and a portion of the surface of the wire bonding portion exposed from the resin portion, and a sealing resin having an insulating property and a light-transmitting property that fills a region surrounded by the resin portion. The first lead is a first back electrode part that is bent at a right angle in a direction opposite to the light incident / exit surface from the other end located at a position opposite to the one end of the die bonding part, as well as/ Is a portion that is bent at a right angle in the direction of the substrate facing surface along a surface that is adjacent to the light incident / exit surface and is perpendicular to the substrate facing surface from the end of the first side wall portion, and the portion excluding the outer surface is A side surface portion integrally covered with the resin portion, and a first side surface electrode portion that is horizontally bent from the end portion of the side surface portion toward the substrate facing surface and protrudes, and the second lead includes the wire A second back electrode portion that is bent at a right angle in a direction opposite to the light incident / exit surface from the other end located at a position opposite to the one end of the bonding portion, and / or the second side wall A side surface portion that is bent at a right angle in the direction of the substrate facing surface along a surface that is adjacent to the light incident / exiting surface from the end and is perpendicular to the substrate facing surface, and the portion excluding the outer surface is integrally covered with the resin portion And a second side surface electrode that is horizontally bent from the end portion of the side surface portion toward the substrate facing surface and protrudes. The first back electrode portion, the second back electrode portion, the first side electrode portion, and the second side electrode portion are each perpendicular to the substrate facing surface from the substrate facing surface. It is located at a position at a predetermined distance on the optical semiconductor element side of the direction.

また、本発明の請求項２に記載された発明は、請求項１において、前記第１の背面電極部、前記第２の背面電極部、前記第１の側面電極部及び前記第２の側面電極部はいずれも前記基板対向面に水平な同一面上にあることを特徴とするものである。   The invention described in claim 2 of the present invention is the first back electrode part, the second back electrode part, the first side electrode part, and the second side electrode in claim 1. All the parts are on the same plane horizontal to the substrate facing surface.

また、本発明の請求項３に記載された発明は、請求項２において、前記基板対向面から前記第１の背面電極部、前記第２の背面電極部、前記第１の側面電極部及び前記第２の側面電極部までの夫々の所定の距離は、いずれも１０〜２５μｍの範囲であることを特徴とするものである。   According to a third aspect of the present invention, in the second aspect, the first back electrode portion, the second back electrode portion, the first side electrode portion, and the substrate from the substrate facing surface. Each of the predetermined distances to the second side surface electrode portion is in the range of 10 to 25 μm.

本発明の光半導体装置は、第１のリードの第１の背面電極部及び／又は第１の側面電極部と、第２のリードの第２の背面電極部及び／又は第２の側面電極部を、基板対向面から該基板対向面の垂直方向の前記半導体素子側に所定の距離を置いた位置に位置させた。   The optical semiconductor device of the present invention includes a first back electrode portion and / or a first side electrode portion of a first lead, and a second back electrode portion and / or a second side electrode portion of a second lead. Was positioned at a predetermined distance from the substrate facing surface to the semiconductor element side in the direction perpendicular to the substrate facing surface.

基板対向面から上記各電極部の下面までの距離は、基板実装時に基板の電極パッド上に各電極部を位置させた状態で実装したときに、電極パッドの厚みに対してはんだ接合時にはんだが充填されて互いにはんだ接合される電極パッドと各電極部との隙間を、高信頼性のはんだ接合を可能にする最適な距離に設定することにより決定される。   The distance from the substrate facing surface to the lower surface of each of the electrode portions described above is such that when the electrodes are mounted with the electrode portions positioned on the electrode pads of the substrate when the substrate is mounted, It is determined by setting the gaps between the electrode pads that are filled and soldered to each other and the respective electrode portions to an optimum distance that enables highly reliable solder bonding.

その結果、はんだリフロー工程に対して、光半導体装置が載置された基板を、該光半導体装置が基板上に傾きのない所定の向きに載置されてなる状態で投入することができ、はんだリフロー後の光半導体装置実装基板は、光半導体装置が基板上に該基板に対して傾くことなく所定の方向を向いた状態で実装される。   As a result, the substrate on which the optical semiconductor device is placed can be thrown into the solder reflow process in a state in which the optical semiconductor device is placed on the substrate in a predetermined orientation without inclination. The optical semiconductor device mounting substrate after reflow is mounted in a state where the optical semiconductor device faces a predetermined direction without being inclined with respect to the substrate.

実施形態の光半導体装置に係わる製造工程の説明図である。It is explanatory drawing of the manufacturing process concerning the optical semiconductor device of embodiment. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 実施形態の光半導体装置を照射方向から見た斜視説明図である。It is perspective explanatory drawing which looked at the optical semiconductor device of embodiment from the irradiation direction. 実施形態の光半導体装置を照射方向の反対方向から見た斜視説明図である。It is the isometric view explanatory view which looked at the optical semiconductor device of embodiment from the opposite direction of the irradiation direction. 実施形態の光半導体装置の縦断面説明図である。It is a longitudinal cross-sectional explanatory drawing of the optical semiconductor device of embodiment. 実施形態の光半導体装置の横断面説明図である。It is a cross-sectional explanatory drawing of the optical semiconductor device of embodiment. 実施形態の光半導体装置の基板実装時の説明図である。It is explanatory drawing at the time of board | substrate mounting of the optical semiconductor device of embodiment. 他の実施形態の光半導体装置を照射方向の反対方向から見た斜視説明図である。It is perspective explanatory drawing which looked at the optical semiconductor device of other embodiment from the reverse direction of the irradiation direction. 図１８に示す光半導体装置の基板実装時の説明図である。It is explanatory drawing at the time of board | substrate mounting of the optical semiconductor device shown in FIG. 他の実施形態の光半導体装置に係わる製造工程の説明図である。It is explanatory drawing of the manufacturing process concerning the optical semiconductor device of other embodiment. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 従来例の説明図である。It is explanatory drawing of a prior art example. 同じく、従来例の説明図である。Similarly, it is explanatory drawing of a prior art example.

以下、この発明の好適な実施形態を図１〜図２３を参照しながら、詳細に説明する（同一部分については同じ符号を付す）。尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 23 (the same parts are denoted by the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

まず、本発明の光半導体装置の製造方法について、図１〜図１２を参照して工程順に詳細に説明する。   First, the manufacturing method of the optical semiconductor device of this invention is demonstrated in detail in order of a process with reference to FIGS.

最初に、多数個取り用のリードフレーム１０の製造工程において、例えば、Ｃｕ合金からなる板材にＮｉ、Ｐｄ、Ａｕ、Ａｇ等のメッキを施すことによる表面処理を行った金属板材に対し、板金加工による切断加工及び打抜き加工を施すことによって不要な部分を取り除き、さらに曲げ加工によって所望の形状に成形する。   First, in the manufacturing process of the lead frame 10 for multi-cavity, for example, sheet metal processing is performed on a metal plate material that has been surface-treated by plating a plate material made of Cu alloy with Ni, Pd, Au, Ag, or the like. Unnecessary portions are removed by performing cutting and punching processes, and further formed into a desired shape by bending.

板金加工後のリードフレーム１０は、図１（平面説明図）、図２（図１のＡ−Ａ断面説明図）及び図３（図１のＢ−Ｂ断面説明図）に示すように、並設された外枠部１１から互いに対向する外枠部１１側に向かって延びる第１のリード部１９と第２のリード部２０を有し、第１のリード部１９及び第２のリード部２０はいずれも夫々の延長方向に向けて階段状に折り曲げられている。   As shown in FIG. 1 (plan view), FIG. 2 (A-A cross section), and FIG. 3 (BB cross-section) in FIG. It has the 1st lead part 19 and the 2nd lead part 20 which are extended toward the outer frame part 11 side which mutually faces from the provided outer frame part 11, and the 1st lead part 19 and the 2nd lead part 20 Each is bent in a staircase shape in the direction of extension.

そのうち、第１のリード部１９は、外枠部１１と、外枠部１１に直角に折り曲げられた側板部１３と、側板部１３に直角に且つ外枠部１１と反対方向に折り曲げられた、光半導体素子をダイボンディングする領域を有するダイボンディング部１５と、ダイボンディング部１５に直角に且つ側板部１３と反対方向に折り曲げられた、外部電源からの電力を受電する外部電極端子部（以下、「電極部」と略称する）１８を有している（図２参照）。   Among them, the first lead portion 19 was bent to the outer frame portion 11, the side plate portion 13 bent at a right angle to the outer frame portion 11, and the right side to the side plate portion 13 and in the opposite direction to the outer frame portion 11. A die bonding portion 15 having a region for die-bonding the optical semiconductor element; and an external electrode terminal portion (hereinafter referred to as power receiving terminal) that receives power from an external power source and is bent at a right angle to the die bonding portion 15 and in a direction opposite to the side plate portion 13. 18 (referred to as “electrode part”) (see FIG. 2).

一方、第２のリード部２０は、外枠部１１と、外枠部１１に直角に折り曲げられた側板部１３と、側板部１３に直角に且つ外枠部１１と反対方向に折り曲げられた、一端部を光半導体素子の電極に接合されたボンディングワイヤの他端部を接合する領域を有するワイヤボンディング部１６と、ワイヤボンディング部１６に直角に且つ側板部１３と反対方向に折り曲げられた電極部１８を有している（図３参照）。   On the other hand, the second lead portion 20 is bent to the outer frame portion 11, the side plate portion 13 bent at a right angle to the outer frame portion 11, and to the side plate portion 13 at a right angle and in the opposite direction to the outer frame portion 11. A wire bonding portion 16 having a region for bonding the other end of the bonding wire having one end bonded to the electrode of the optical semiconductor element, and an electrode portion bent at a right angle to the wire bonding portion 16 and in a direction opposite to the side plate portion 13 18 (see FIG. 3).

つまり、板金加工後のリードフレーム１０は、外枠部１１、側板部１３、ダイボンディング部１５或いはワイヤボンディング部１６、及び電極部１８の４つの平坦面と、外枠部１１と側板部１３による第１の折曲部１２、側板部１３とダイボンディング部１５或いはワイヤボンディング部１６による第２の折曲部１４、及びダイボンディング部１５或いはワイヤボンディング部１６と電極部１８による第３の折曲部１７の３つの直角折曲部を有している。   That is, the lead frame 10 after the sheet metal processing includes the four flat surfaces of the outer frame portion 11, the side plate portion 13, the die bonding portion 15 or the wire bonding portion 16, and the electrode portion 18, and the outer frame portion 11 and the side plate portion 13. The first bent portion 12, the side plate portion 13 and the second bent portion 14 by the die bonding portion 15 or the wire bonding portion 16, and the third bent portion by the die bonding portion 15 or the wire bonding portion 16 and the electrode portion 18. The portion 17 has three right-angle bent portions.

次に、板金加工後のリードフレーム１０を成形樹脂でインサート成形して成形品（多数個取り用のパッケージ）を作製する。   Next, the lead frame 10 after sheet metal processing is insert-molded with a molding resin to produce a molded product (a package for multi-cavity).

図４は板金加工後のリードフレーム１０の平面説明図、図５は図４の第１のリード部１９のＣ−Ｃ線の位置におけるインサート成形時の断面説明図、図６は図４の第１のリード部１９のＤ−Ｄ線の位置におけるインサート成形時の断面説明図である。   4 is a plan view of the lead frame 10 after sheet metal processing, FIG. 5 is a cross-sectional view of the first lead portion 19 of FIG. 4 at the position of the CC line, and FIG. 6 is a view of FIG. FIG. 6 is a cross-sectional explanatory view at the time of insert molding at the position of the DD line of one lead portion 19.

インサート成形の成形樹脂２１は、ポリアミド樹脂或いはシリコーン樹脂等の絶縁性及び遮光性を有する樹脂材料が用いられ、固定金型４１と可動金型４２が型締めされてなる金型４０内にセットされたリードフレーム１０の所定の位置に成形樹脂２１を一体化する。   As the molding resin 21 for insert molding, a resin material having insulation properties and light shielding properties such as polyamide resin or silicone resin is used, and the molding resin 21 is set in a mold 40 in which a fixed mold 41 and a movable mold 42 are clamped. The molding resin 21 is integrated into a predetermined position of the lead frame 10.

この場合、リードフレーム１０の第１のリード部１９の中央部（Ｃ−Ｃ線の位置）は図５にあるように、対向する側板部１３の夫々の内側と、対向する電極部１８間の隙間１８ｃを塞ぐように成形樹脂２１が充填され、第１のリード部１９の縁部（Ｄ−Ｄ線の位置）は図６にあるように、対向する電極部１８間の隙間１８ｃを塞ぐと共にダイボンディング部１５の上面及び対向する側板部１３の夫々の内側を成形樹脂２１が一体に充填される。   In this case, as shown in FIG. 5, the center portion (the position of the CC line) of the first lead portion 19 of the lead frame 10 is between the inside of each of the opposing side plate portions 13 and the opposing electrode portion 18. The molding resin 21 is filled so as to close the gap 18c, and the edge portion (the position of the DD line) of the first lead portion 19 closes the gap 18c between the opposing electrode portions 18 as shown in FIG. The molding resin 21 is integrally filled in the upper surface of the die bonding part 15 and the inner side of the opposing side plate part 13.

なお、図示はしないが、リードフレーム１０の第２のリード部２０においても、中央部は対向する側板部の夫々の内側と、対向する電極部間の隙間を塞ぐように成形樹脂が充填され、縁部は対向する電極部間の隙間を塞ぐと共にワイヤボンディング部の上面及び対向する側板部の夫々の内側を成形樹脂が一体に充填される。   Although not shown, in the second lead portion 20 of the lead frame 10, the central portion is filled with molding resin so as to close the gap between the opposing side plate portions and the opposing electrode portions, The edge portion closes the gap between the opposing electrode portions, and the molding resin is integrally filled inside the upper surface of the wire bonding portion and the opposite side plate portions.

リードフレーム１０において切断加工及び打抜き加工によって取り除かれた部分は、封止樹脂２１の下面２１ａの位置がダイボンディング部１５の下面１５ｂ（図５及び図６参照）及びワイヤボンディング部の下面（図示せず）と略同一面上に位置している。   The portions of the lead frame 10 that have been removed by cutting and punching are such that the position of the lower surface 21a of the sealing resin 21 is the lower surface 15b of the die bonding portion 15 (see FIGS. 5 and 6) and the lower surface of the wire bonding portion (not shown). Z)).

すると、図７（平面説明図）に示すような成形品（多数個取り用のパッケージ）が得られる。インサート成形によって得られた多面取り用のパッケージ５０は、成形樹脂２１による樹脂部５１が側壁部５１ａと底部５１ｂで構成されるバット状を呈しており、底部５１ｂはリードフレーム１０の各ダイボンディング部１５の一部及び各ワイヤボンディング部１６の一部が露出して夫々ダイボンディング領域１５ａ及びワイヤボンディング領域１６ａが形成されている。   As a result, a molded product (package for multi-cavity) as shown in FIG. 7 (plan view) is obtained. The multi-chamfered package 50 obtained by insert molding has a bat shape in which a resin part 51 made of molding resin 21 is composed of a side wall part 51a and a bottom part 51b, and the bottom part 51b is a die bonding part of the lead frame 10. 15 and a part of each wire bonding portion 16 are exposed to form a die bonding region 15a and a wire bonding region 16a, respectively.

なお、側壁部５１ａの上端５１ａａはリードフレーム１０の外枠部１１の上面１１ａと略面一になっている。   The upper end 51aa of the side wall 51a is substantially flush with the upper surface 11a of the outer frame 11 of the lead frame 10.

次に、図８（平面説明図）及び図９（図８のＥ−Ｅ断面説明図）に示すように、第１のリード部１９のダイボンディング部１５におけるダイボンディング領域１５ａの所定の位置に、所定数の光半導体素子３０をダイボンディングして第１のリード部１９のダイボンディング部１５と光半導体素子３０の下部電極の機械的及び電気的接続を図り、第２のリード部２０のワイヤボンディング部１６におけるワイヤボンディング領域１６ａの所定に位置に、光半導体素子３０の上部電極に一端部を接合したボンディングワイヤ３１の他端部を接合して第２のリード部２０のワイヤボンディング部１６と光半導体素子３０の上部電極の電気的接続を図る。   Next, as shown in FIG. 8 (planar explanatory diagram) and FIG. 9 (EE cross-sectional explanatory diagram in FIG. 8), the die bonding region 15a of the first lead portion 19 is placed at a predetermined position in the die bonding region 15a. A predetermined number of optical semiconductor elements 30 are die-bonded to mechanically and electrically connect the die bonding part 15 of the first lead part 19 and the lower electrode of the optical semiconductor element 30, and the wires of the second lead part 20 At the predetermined position of the wire bonding region 16a in the bonding portion 16, the other end portion of the bonding wire 31 having one end bonded to the upper electrode of the optical semiconductor element 30 is bonded to the wire bonding portion 16 of the second lead portion 20. Electrical connection of the upper electrode of the optical semiconductor element 30 is intended.

次に、図１０（断面説明図）に示すように、側壁部５１ａと底部５１ｂで構成されたバット状の樹脂部５１に囲まれた領域内に、シリコーン樹脂或いはエポキシ樹脂等の絶縁性及び透光性を有する樹脂材料からなる封止樹脂３２を充填し、光半導体素子３０及びボンディングワイヤ３１を樹脂封止する。なお、封止樹脂３２は、光半導体装置の使用目的や用途に応じて蛍光体、拡散材、或いは可視光吸収材等が適宜混入される。これにより、多数個取り光半導体装置２が出来上がる。   Next, as shown in FIG. 10 (cross-sectional explanatory view), in the region surrounded by the bat-shaped resin part 51 constituted by the side wall part 51a and the bottom part 51b, the insulating and transparent properties such as silicone resin or epoxy resin are provided. A sealing resin 32 made of a resin material having optical properties is filled, and the optical semiconductor element 30 and the bonding wire 31 are resin-sealed. The sealing resin 32 is appropriately mixed with a phosphor, a diffusing material, a visible light absorbing material, or the like depending on the purpose and application of the optical semiconductor device. Thereby, a multi-piece optical semiconductor device 2 is completed.

次に、多数個取り光半導体装置２を、図１１（断面説明図）のように縦横夫々所定の間隔で切断して複数個に個片化し、図１２（断面説明図）のような個々の光半導体装置１を得る。   Next, the multi-piece optical semiconductor device 2 is cut into a plurality of pieces by cutting at predetermined intervals in the vertical and horizontal directions as shown in FIG. 11 (cross-sectional explanatory view), and individual pieces as shown in FIG. An optical semiconductor device 1 is obtained.

なお、リードフレーム１０の表面処理は、上記工程のように板金加工前に行ってもよいし、板金加工後のリードフレーム１０に行ってもよい。いずれにしても、工程の適宜な段階で施される。   The surface treatment of the lead frame 10 may be performed before the sheet metal processing as in the above process, or may be performed on the lead frame 10 after the sheet metal processing. In any case, it is applied at an appropriate stage of the process.

上記の工程を経て得られた光半導体装置１は、図１３（照射方向から見た斜視説明図）、図１４（照射方向の反対方向から見た斜視説明図）、図１５（縦断面説明図）及び図１６（横断面説明図）に示す構造を有するものとなる。具体的には上記製造工程においても説明しているので重複することもあるが、改めて以下に詳細に説明する。   The optical semiconductor device 1 obtained through the above steps is shown in FIG. 13 (a perspective explanatory view seen from the irradiation direction), FIG. 14 (a perspective explanatory view seen from the opposite direction of the irradiation direction), and FIG. ) And FIG. 16 (transverse cross-sectional explanatory view). Specifically, since it has also been described in the above manufacturing process, it may overlap, but will be described in detail below.

夫々が例えば、Ｃｕ合金からなる板材にＮｉ、Ｐｄ、Ａｕ、Ａｇ等のメッキを施してなる金属板材を階段状に折り曲げた第１のリード部１９と第２のリード部２０が、互いの折り曲げ方向に対して垂直な方向に所定の間隔を保って平行に並設されている。   Each of the first lead portion 19 and the second lead portion 20 is formed by bending a metal plate material obtained by plating, for example, a plate material made of a Cu alloy with Ni, Pd, Au, Ag, or the like into a step shape. They are arranged in parallel in a direction perpendicular to the direction at a predetermined interval.

そのうち、第１のリード部１９は、側板部１３ａと、側板部１３ａに直角に折り曲げられたダイボンディング部１５と、ダイボンディング部１５に直角に且つ側板部１３ａと反対方向に折り曲げられた電極部１８ａを有しており、一方、第２のリード部２０は、側板部１３ｂと、側板部１３ｂに直角に折り曲げられたワイヤボンディング部１６と、ワイヤボンディング部１６に直角に且つ側板部１３ｂと反対方向に折り曲げられた電極部１８ｂを有している。   Among them, the first lead portion 19 includes a side plate portion 13a, a die bonding portion 15 bent at a right angle to the side plate portion 13a, and an electrode portion bent at a right angle to the die bonding portion 15 and in a direction opposite to the side plate portion 13a. On the other hand, the second lead portion 20 has a side plate portion 13b, a wire bonding portion 16 bent at a right angle to the side plate portion 13b, a right angle to the wire bonding portion 16 and opposite to the side plate portion 13b. It has the electrode part 18b bent in the direction.

つまり、側板部１３ａと側板部１３ｂ、ダイボンディング部１５とワイヤボンディング部１６、電極部１８ａと電極部１８ｂは夫々同一平面上に位置している。   That is, the side plate portion 13a and the side plate portion 13b, the die bonding portion 15 and the wire bonding portion 16, and the electrode portion 18a and the electrode portion 18b are located on the same plane.

そして、樹脂部５１が、その側壁部５１ａの外面５１ａｂを、第１のリード部１９の側板部１３ａの外面１３ａａ及び第２のリード部２０の側板部１３ｂの外面１３ｂａと略面一とし、且つ、その底部５１ｂの外面５１ｂａを、第１のリード部１９のダイボンディング部１５の外面１５ｂ及び第２のリード部２０のワイヤボンディング部１６の外面１６ｂと略面一とすると共に、第１のリード部１９の側板部１３ａとダイボンディング部１５、及び第２のリード部２０の側板部１３ｂとワイヤボンディング部１６を覆って内部に埋没した状態で一体化している。   The resin portion 51 has the outer surface 51ab of the side wall portion 51a substantially flush with the outer surface 13aa of the side plate portion 13a of the first lead portion 19 and the outer surface 13ba of the side plate portion 13b of the second lead portion 20. The outer surface 51ba of the bottom 51b is substantially flush with the outer surface 15b of the die bonding portion 15 of the first lead portion 19 and the outer surface 16b of the wire bonding portion 16 of the second lead portion 20, and the first lead The side plate portion 13a and the die bonding portion 15 of the portion 19 and the side plate portion 13b and the wire bonding portion 16 of the second lead portion 20 are covered and integrated in an embedded state.

樹脂部５１の底部５１ｂは、該樹脂部５１の一部が除去されて第１のリード部１９のダイボンディング部１５の一部及び第２のリード部２０のワイヤボンディング部１６の一部が露出して夫々ダイボンディング領域１５ａ及びワイヤボンディング領域１６ａが形成され、ダイボンディング領域１５ａのダイボンディング部１５上には、光半導体素子３０がダイボンディングされてダイボンディング部１５と光半導体素子３０の下部電極の機械的及び電気的接続が図られている。   At the bottom 51b of the resin part 51, a part of the resin part 51 is removed and a part of the die bonding part 15 of the first lead part 19 and a part of the wire bonding part 16 of the second lead part 20 are exposed. Thus, a die bonding region 15a and a wire bonding region 16a are formed, and the optical semiconductor element 30 is die-bonded on the die bonding portion 15 of the die bonding region 15a, so that the die bonding portion 15 and the lower electrode of the optical semiconductor element 30 are formed. The mechanical and electrical connections are made.

また、ワイヤボンディング領域１６ａのワイヤボンディング部１６上には、光半導体素子３０の上部電極に一端部を接合したボンディングワイヤ３１の他端部がワイヤボンディングにより接合されてワイヤボンディング部１６と光半導体素子３０の上部電極の電気的接続が図られている。   On the wire bonding portion 16 in the wire bonding region 16a, the other end portion of the bonding wire 31 having one end bonded to the upper electrode of the optical semiconductor element 30 is bonded by wire bonding, so that the wire bonding portion 16 and the optical semiconductor element are bonded. The electrical connection of 30 upper electrodes is intended.

そして、樹脂部５１の側壁部５１ａ及び底部５１ｂで囲まれた領域内に、シリコーン樹脂或いはエポキシ樹脂等の絶縁性及び透光性を有する樹脂材料からなる封止樹脂３２が設けられ、光半導体素子３０及びボンディングワイヤ３１が樹脂封止されている。封止樹脂３２の下面３２ａは、樹脂部５１の底部５１ｂの端面５１ｂｂと面一となっている。   A sealing resin 32 made of a resin material having insulation and translucency, such as silicone resin or epoxy resin, is provided in a region surrounded by the side wall 51a and the bottom 51b of the resin portion 51, and an optical semiconductor element 30 and the bonding wire 31 are resin-sealed. The lower surface 32 a of the sealing resin 32 is flush with the end surface 51 bb of the bottom 51 b of the resin portion 51.

樹脂部５１の底部５１ｂの端面５１ｂｂは、第１のリード部１９の電極部１８ａ、第２のリード部２０の電極部１８ｂ及び樹脂部５１の底部５１ｂの互いに面一な夫々の下面１８ａａ、１８ｂａ及び端面５１ｂｂと平行な面であり、且つ、これらの面１８ａａ、１８ｂａ、５１ｂｂに対して光半導体素子３０側に位置しており、互いの距離（ｄ）は１０〜２５μｍの範囲に設定されている（図１５参照）。   The end surface 51bb of the bottom 51b of the resin part 51 is formed on the lower surfaces 18aa and 18ba that are flush with each other of the electrode part 18a of the first lead part 19, the electrode part 18b of the second lead part 20, and the bottom part 51b of the resin part 51. And the surface parallel to the end face 51bb, and located on the optical semiconductor element 30 side with respect to these faces 18aa, 18ba, 51bb, and the distance (d) of each other is set in the range of 10 to 25 μm. (See FIG. 15).

このような構造を有するサイドビュータイプの光半導体装置１について図１７（基板実装時の説明図）を参照して外観的な説明を加えると、光半導体装置１は略矩形状を呈しており、光半導体素子３０が実装された平板状のリードと一端部が光半導体素子３０の電極に接続されたボンディングワイヤ３１の他端部が接続された平板状のリードが互いに分離独立して設けられ、電極部１８ａ、１８ｂとなる夫々の端部部分が、外部からの光を光半導体素子３０に導入する面或いは光半導体素子３０から発せられた光を外部に向けて出射する面（光入出射面）３に対向する側の面、つまり、光入出射面３の反対側の面４から外部に突出している。   When an external description is added to the side view type optical semiconductor device 1 having such a structure with reference to FIG. 17 (an explanatory diagram when mounted on a substrate), the optical semiconductor device 1 has a substantially rectangular shape. A flat lead on which the optical semiconductor element 30 is mounted and a flat lead on which one end of the bonding wire 31 connected to the electrode of the optical semiconductor element 30 is connected are provided separately from each other, Each of the end portions that become the electrode portions 18a and 18b has a surface for introducing light from the outside into the optical semiconductor element 30 or a surface for emitting the light emitted from the optical semiconductor element 30 to the outside (light incident / exit surface). ) It protrudes to the outside from the surface on the side facing 3, that is, the surface 4 opposite to the light incident / exit surface 3.

電極部１８ａ、１８ｂは、光半導体装置１を基板実装するときに基板５５の光半導体装置実装面５５ａに対向する面となる基板対向面５に対して略平行となるように突出形成されている。基板対向面５と電極部１８ａ、１８ｂの夫々の下面１８ａａ、１８ｂａは、基板対向面５の垂直方向において（ｄ）＝１０〜２５μｍの範囲の距離を置いて位置している。   The electrode portions 18 a and 18 b are formed so as to be substantially parallel to the substrate facing surface 5 which is a surface facing the optical semiconductor device mounting surface 55 a of the substrate 55 when the optical semiconductor device 1 is mounted on the substrate. . The substrate facing surface 5 and the lower surfaces 18aa and 18ba of the electrode portions 18a and 18b are located at a distance in the range of (d) = 10 to 25 μm in the vertical direction of the substrate facing surface 5.

基板対向面５と電極部１８ａ、１８ｂの夫々の下面１８ａａ、１８ｂａとの距離（ｄ）は、光半導体装置１を、配線パターン５６が形成された基板５５の該配線パターン５６を避けた光半導体装置実装面５５ａの位置に基板対向面５を載置すると共に、配線パターン５６の電極パッド５６ａ上に電極部１８ａ、１８ｂを位置させた状態で基板５５に実装したときに、電極パッド５６ａの厚みに対してはんだ接合時にはんだ６０が充填されて互いにはんだ接合される電極パッド５６ａと電極部１８ａ、１８ｂとの隙間を、高信頼性のはんだ接合を可能にする最適な距離に設定することにより決定される。   The distance (d) between the substrate facing surface 5 and the lower surfaces 18aa and 18ba of the electrode portions 18a and 18b is determined by the optical semiconductor device 1 avoiding the wiring pattern 56 of the substrate 55 on which the wiring pattern 56 is formed. When the substrate facing surface 5 is placed at the position of the device mounting surface 55a and the electrode portions 18a and 18b are positioned on the electrode pads 56a of the wiring pattern 56 and mounted on the substrate 55, the thickness of the electrode pads 56a. On the other hand, the gap between the electrode pad 56a and the electrode portions 18a and 18b, which are filled with the solder 60 at the time of soldering and soldered to each other, is determined by setting the optimum distance that enables highly reliable soldering. Is done.

これにより、はんだリフローによるはんだ接合に当たり、予め基板５５上に載置された光半導体装置１は、基板５５の配線パターン５６を避けた平面状の光半導体装置実装面５５ａ上に光半導体装置１の平面状の基板対向面５が面接触した状態となる。   As a result, the optical semiconductor device 1 placed on the substrate 55 in advance for the solder joint by solder reflow, the optical semiconductor device 1 is placed on the planar optical semiconductor device mounting surface 55a avoiding the wiring pattern 56 of the substrate 55. The planar substrate facing surface 5 is in surface contact.

そのため、はんだリフロー工程に対して、光半導体装置１が載置された基板５５を、該光半導体装置１が基板５５上に傾きのない所定の向きに載置されてなる状態で投入することができる。   For this reason, the substrate 55 on which the optical semiconductor device 1 is placed may be thrown into the solder reflow process in a state in which the optical semiconductor device 1 is placed on the substrate 55 in a predetermined orientation without inclination. it can.

また、はんだリフロー工程におけるはんだ接合においては、光半導体装置１の、基板５５の光半導体装置実装面５５ａに面接触する基板対向面５は、基板５５の電極パッド５６ａに対するハンダ接合部となる電極部１８ａ、１８ｂの夫々の面積の合計面積よりも大きいため、電極パッド５６ａと電極部１８ａ、１８ｂとの隙間に充填されたはんだの溶融時の表面張力によっても基板５５の光半導体装置実装面５５ａから光半導体装置１の基板対向面５が浮き上がることがなく、所謂マンハッタン現象と称される光半導体装置１が基板５５に対して傾いた状態となるようなことはない。   Further, in the solder bonding in the solder reflow process, the substrate facing surface 5 of the optical semiconductor device 1 that is in surface contact with the optical semiconductor device mounting surface 55a of the substrate 55 is an electrode portion that serves as a solder joint to the electrode pad 56a of the substrate 55. Since the total area of the respective areas of 18a and 18b is larger, the surface tension at the time of melting of the solder filled in the gap between the electrode pad 56a and the electrode portions 18a and 18b is also from the optical semiconductor device mounting surface 55a of the substrate 55. The substrate facing surface 5 of the optical semiconductor device 1 is not lifted, and the optical semiconductor device 1 called a so-called Manhattan phenomenon is not inclined with respect to the substrate 55.

したがって、はんだリフロー後の光半導体装置実装基板は、光半導体装置１が基板５５上に該基板５５に対して傾くことなく所定の方向を向いた状態で実装される。   Therefore, the optical semiconductor device mounting substrate after the solder reflow is mounted on the substrate 55 with the optical semiconductor device 1 facing a predetermined direction without being inclined with respect to the substrate 55.

なお、上記実施形態の光半導体装置１においては、電極部１８ａ、１８ｂが光入出射面３に対向する側の面、つまり、光入出射面の反対側の面４から外部に突出しているが（図１４参照）、電極部１８ａ、１８ｂが突出する面はこの面に限られるものではなく、図１８（照射方向の反対方向から見た斜視説明図）にあるように、基板対向面５及び基板対向面５に対向する側の面、つまり、基板対向面５の反対側の面６を除く光入出射面３に垂直な面（側面）７、８から互いに反対方向に、且つ基板対向面５に対して略平行となるように突出形成されてもよい。   In the optical semiconductor device 1 of the above embodiment, the electrode portions 18a and 18b protrude outward from the surface facing the light incident / exit surface 3, that is, the surface 4 opposite to the light incident / exit surface. (Refer to FIG. 14) The surface from which the electrode portions 18a and 18b protrude is not limited to this surface. As shown in FIG. 18 (a perspective explanatory view viewed from the direction opposite to the irradiation direction), the substrate facing surface 5 and The surface opposite to the substrate facing surface 5, that is, the surfaces (side surfaces) 7 and 8 perpendicular to the light incident / exit surface 3 excluding the surface 6 on the opposite side of the substrate facing surface 5, opposite to each other, and the substrate facing surface 5 may be formed so as to be substantially parallel to 5.

このように構成された光半導体装置１は、はんだリフローによる基板実装に際しては図１９（基板実装時の説明図）に示すように、基板５５の配線パターン５６を避けた平面状の光半導体装置実装面５５ａ上に光半導体装置１の平面状の基板対向面５を面接触した状態で、光半導体装置１の両側面７、８から突出した電極部１８ａ、１８ｂが夫々基板５５の電極パッド５６ａ、５６ｂにはんだ６０を介して接合される。   The optical semiconductor device 1 configured as described above is mounted on a planar optical semiconductor device that avoids the wiring pattern 56 of the substrate 55 as shown in FIG. 19 (an explanatory diagram when mounting the substrate) when mounting the substrate by solder reflow. In a state where the planar substrate facing surface 5 of the optical semiconductor device 1 is in surface contact with the surface 55a, the electrode portions 18a and 18b protruding from the both side surfaces 7 and 8 of the optical semiconductor device 1 are electrode pads 56a and 56a of the substrate 55, respectively. It is joined to 56b through solder 60.

この場合、電極部１８ａ、１８ｂが光入出射面４の反対面４から突出した上記実施形態に比べ、基板５５に対して光半導体装置１を両側で固定することができるため該基板５５に対する光半導体装置１の固定安定性が高められる。   In this case, since the optical semiconductor device 1 can be fixed to the substrate 55 on both sides as compared with the above embodiment in which the electrode portions 18 a and 18 b protrude from the opposite surface 4 of the light incident / exit surface 4, the light with respect to the substrate 55 The fixing stability of the semiconductor device 1 is improved.

いずれにしても、光半導体装置の電極部の突出面は、該光半導体装置を基板に実装したときに、基板に対向する面及びその反対面を除く光入出射面に垂直な面（３面）のうち適宜な１面或いは複数面から突出される。   In any case, when the optical semiconductor device is mounted on the substrate, the protruding surface of the electrode portion of the optical semiconductor device is a surface (three surfaces) perpendicular to the light incident / exit surface excluding the surface facing the substrate and the opposite surface. ) From one or more appropriate surfaces.

そのいずれの場合も、電極部は、光半導体装置を基板実装するときに基板の光半導体装置実装面に対向する面となる基板対向面に対して略平行となるように突出形成される。基板対向面と電極部の夫々の下面は、基板対向面の垂直方向において（ｄ）＝１０〜２５μｍの範囲の距離を置いて位置するものとなる。   In either case, the electrode portion is formed so as to protrude substantially parallel to the substrate facing surface that is the surface facing the optical semiconductor device mounting surface of the substrate when the optical semiconductor device is mounted on the substrate. The substrate facing surface and the lower surfaces of the electrode portions are positioned at a distance in the range of (d) = 10 to 25 μm in the vertical direction of the substrate facing surface.

ところで、上記光半導体装置においては、基板対向面の、樹脂部で形成された部分以外の部分が透光性を有する樹脂材料からなる封止樹脂で形成されているが、この面を形成している部分を部分的に反射面とすることにより、光半導体素子から実装基板方向に発せられた光を該反射面で反射して基板の上方に向かう反射光を光出射面から外部に出射することも可能である。これにより、光半導体素子から発せられた光を照射光として効率良く活用することができ、光の利用効率を高めることができる。   By the way, in the above optical semiconductor device, a portion of the substrate facing surface other than the portion formed by the resin portion is formed of a sealing resin made of a light-transmitting resin material. By making the portion that is partly a reflective surface, the light emitted from the optical semiconductor element toward the mounting substrate is reflected by the reflective surface, and the reflected light directed upward from the substrate is emitted from the light emitting surface to the outside. Is also possible. Thereby, the light emitted from the optical semiconductor element can be efficiently utilized as the irradiation light, and the light utilization efficiency can be increased.

具体的な製造工程においては、側壁部５１ａと底部５１ｂで構成されたバット状の樹脂部５１に囲まれた領域内に、シリコーン樹脂或いはエポキシ樹脂等の絶縁性及び透光性を有する樹脂材料からなる封止樹脂３２を充填し、光半導体素子３０及びボンディングワイヤ３１を樹脂封止した後、図２０（断面説明図）にあるように、切断線に沿って所定の幅及び深さの溝６５を形成する。   In a specific manufacturing process, an insulating and translucent resin material such as a silicone resin or an epoxy resin is used in a region surrounded by a bat-shaped resin portion 51 composed of a side wall portion 51a and a bottom portion 51b. After the sealing resin 32 is filled and the optical semiconductor element 30 and the bonding wire 31 are resin-sealed, as shown in FIG. 20 (cross-sectional explanatory view), a groove 65 having a predetermined width and depth along the cutting line. Form.

溝６５の形成は、ブレード或いはレーザー光によるダイシングでおこなわれ、ブレードでダイシングされた溝６５ａは断面形状が矩形になるのに対し、レーザー光でダイシングされた溝６５ｂの場合は該溝６５ｂの底面側（レーザー光の照射方向側）が狭まる逆台形状の断面形状を呈する。   The groove 65 is formed by dicing with a blade or laser light, and the groove 65a diced with the blade has a rectangular cross section, whereas the groove 65b diced with laser light has a bottom surface of the groove 65b. It exhibits an inverted trapezoidal cross-sectional shape with a narrower side (laser beam irradiation direction side).

次に、図２１（断面説明図）にあるように、溝６５内に、例えば酸化チタンを含むシリコーン樹脂を充填して光反射部６６を形成する。   Next, as shown in FIG. 21 (cross-sectional explanatory view), the light reflecting portion 66 is formed by filling the groove 65 with, for example, a silicone resin containing titanium oxide.

その後、図２２（断面説明図）にあるように、溝６５を切断線に沿って溝６５よりも細いブレード或いは溝６５よりも細いスポット径のレーザー光で切断して複数個に個片化し、図２３（断面説明図）のような個々の光半導体装置１を得る。   After that, as shown in FIG. 22 (cross-sectional explanatory view), the groove 65 is cut along a cutting line with a blade thinner than the groove 65 or a laser beam with a spot diameter thinner than the groove 65 to be divided into a plurality of pieces. Individual optical semiconductor devices 1 as shown in FIG. 23 (cross-sectional explanatory view) are obtained.

以上のように、本発明の光半導体装置は、予め金属板材の板金加工により成形されたリードフレームを成形樹脂でインサート成形することによりリードフレームの所定の位置に成形樹脂が一体化されてなる多数個取り用のパッケージを作製し、パッケージ内のリードフレームの所定の位置に光半導体素子をダイボンディングすると共にボンディングワイヤをワイヤボンディングした後に、パッケージ内に透光性を有する封止樹脂を充填して全ての光半導体素子及びボンディングワイヤを一括で樹脂封止し、最後に、縦横夫々所定の間隔で切断して個片化した複数の光半導体装置を得るものである。   As described above, the optical semiconductor device of the present invention has a large number of molding resins integrated at predetermined positions of a lead frame by insert molding a lead frame previously molded by sheet metal processing of a metal plate material with molding resin. A package for individual production is manufactured, an optical semiconductor element is die-bonded at a predetermined position of a lead frame in the package, and a bonding wire is wire-bonded, and then a sealing resin having translucency is filled in the package. All the optical semiconductor elements and bonding wires are collectively sealed with resin, and finally, a plurality of optical semiconductor devices are obtained by cutting them at predetermined intervals in the vertical and horizontal directions.

したがって、製造工程において一般的な光半導体装置の製造に用いられる部材以外の特別な部材を用いることなく、上述のように、はんだリフロー工程におけるはんだ実装時に、溶融はんだの表面張力によって実装基板に対して傾いた状態で実装されることがない光半導体装置を実現することができる。   Therefore, without using a special member other than the members used for manufacturing a general optical semiconductor device in the manufacturing process, as described above, the surface tension of the molten solder is applied to the mounting substrate during solder mounting in the solder reflow process. An optical semiconductor device that is not mounted in a tilted state can be realized.

なお、第１のリードと第２のリードは、夫々同一の幅に形成してもよいし、異なる幅にしてもよい。夫々異なる幅にした場合は、光半導体素子がダイボンディングされたリードか或いはボンディングワイヤが接合されたリードかを外観によって認識することができる。そのため、基板実装時に極性を間違えて実装することが防止され、電気的に確実な基板実装を行うことができる。   Note that the first lead and the second lead may be formed to have the same width or different widths. When the widths are different from each other, it is possible to recognize from the appearance whether the optical semiconductor element is a die-bonded lead or a bonding wire-bonded lead. For this reason, it is possible to prevent mounting with a wrong polarity at the time of board mounting, and it is possible to perform board mounting that is electrically reliable.

また、電極部１８ａ、１８ｂの突出方向は、光半導体装置が実装される基板の実装スペース或いは光半導体装置の製造上の容易性等を考慮して適宜決められる。   The protruding directions of the electrode portions 18a and 18b are appropriately determined in consideration of the mounting space of the substrate on which the optical semiconductor device is mounted or the ease of manufacturing the optical semiconductor device.

上述の光半導体素子３０は、フォトダイオード、フォトトランジスタ等の受光素子、或いはＬＥＤやレーザー等の発光素子が用いられる。したがって、上記光入出射面は受光素子の場合は光入射面となり、発光素子の場合は光出射面となる。   The optical semiconductor element 30 is a light receiving element such as a photodiode or a phototransistor, or a light emitting element such as an LED or a laser. Therefore, the light incident / exit surface is a light incident surface in the case of a light receiving element, and is a light emitting surface in the case of a light emitting element.

樹脂部５１を形成する成形樹脂２１は、蛍光体、拡散材、可視光吸収材等の光学特性を制御することができる部材を混入してもよい。   The molding resin 21 forming the resin portion 51 may be mixed with a member capable of controlling optical characteristics such as a phosphor, a diffusing material, and a visible light absorbing material.

１… 光半導体装置
２… 多数個取り光半導体装置
３… 光入出射面
４… 光入出射面の反対面
５… 基板対向面
６… 基板対向面の反対面
７… 光入出射面に垂直な面（側面）
８… 光入出射面に垂直な面（側面）
１０… リードフレーム
１１… 外枠部
１１ａ… 上面
１２… 第１の折曲部
１３… 側板部
１３ａ… 側板部
１３ａａ… 外面
１３ｂ… 側板部
１３ｂａ… 外面
１４… 第２の折曲部
１５… ダイボンディング部
１５ａ… ダイボンディング領域
１５ｂ… 下面（外面）
１６… ワイヤボンディング部
１６ａ… ワイヤボンディング領域
１６ｂ… 下面（外面）
１７… 第３の折曲部
１８… 外部電極端子部（電極部）
１８ａ… 外部電極端子部（電極部）
１８ａａ… 下面
１８ｂ… 外部電極端子部（電極部）
１８ｂａ… 下面
１８ｃ… 隙間
１９… 第１のリード（第１のリード部）
２０… 第２のリード（第２のリード部）
２１… 成形樹脂
２１ａ… 下面
３０… 光半導体素子
３１… ボンディングワイヤ
３２… 封止樹脂
３２ａ… 下面
４０… 金型
４１… 固定金型
４２… 可動金型
５０… 多面取り用パッケージ
５１… 樹脂部
５１ａ… 側壁部
５１ａａ… 上端
５１ａｂ… 外面
５１ｂ… 底部
５１ｂａ… 外面
５１ｂｂ… 端面
５５… 基板
５５ａ… 光半導体装置実装面
５６… 配線パターン
５６ａ… 電極パッド
５６ｂ… 電極パッド
６０… はんだ
６５… 溝
６５ａ… 溝
６５ｂ… 溝
６６… 光反射部 DESCRIPTION OF SYMBOLS 1 ... Optical semiconductor device 2 ... Multi-piece optical semiconductor device 3 ... Light entrance / exit surface 4 ... Opposite surface of light entrance / exit surface 5 ... Substrate facing surface 6 ... Opposite surface of substrate facing surface 7 ... Vertical to light entrance / exit surface Side (side)
8 ... Surface (side surface) perpendicular to the light incident / exit surface
DESCRIPTION OF SYMBOLS 10 ... Lead frame 11 ... Outer frame part 11a ... Upper surface 12 ... First bent part 13 ... Side plate part 13a ... Side plate part 13aa ... Outer surface 13b ... Side plate part 13ba ... Outer surface 14 ... Second bent part 15 ... Die bonding Part 15a ... Die bonding area 15b ... Lower surface (outer surface)
16 ... Wire bonding part 16a ... Wire bonding area 16b ... Lower surface (outer surface)
17 ... 3rd bending part 18 ... External electrode terminal part (electrode part)
18a ... External electrode terminal part (electrode part)
18aa ... Lower surface 18b ... External electrode terminal part (electrode part)
18ba ... lower surface 18c ... gap 19 ... first lead (first lead part)
20 ... 2nd lead (2nd lead part)
DESCRIPTION OF SYMBOLS 21 ... Molding resin 21a ... Lower surface 30 ... Optical semiconductor element 31 ... Bonding wire 32 ... Sealing resin 32a ... Lower surface 40 ... Mold 41 ... Fixed mold 42 ... Movable mold 50 ... Multi-sided package 51 ... Resin part 51a ... Side wall 51aa ... Upper end 51ab ... Outer surface 51b ... Bottom 51ba ... Outer surface 51bb ... End surface 55 ... Substrate 55a ... Optical semiconductor device mounting surface 56 ... Wiring pattern 56a ... Electrode pad 56b ... Electrode pad 60 ... Solder 65 ... Groove 65a ... Groove 65b ... groove
66 ... Light reflection part

Claims (3)

光入出射面に対向する位置に該光入出射面と平行に位置する平板状のダイボンディング部と、前記ダイボンディング部の一端部から前記光入出射面方向に直角に折曲されて、基板実装時に基板と対向する側の基板対向面に対向する位置に該基板対向面と平行に位置する第１の側板部を有する第１のリードと、
前記光入出射面に対向する位置に前記第ダイボンディング部と同一平面上に並設された平板状のワイヤボンディング部と、前記ワイヤボンディング部の一端部から前記光入出射面方向に直角に折曲されて、前記基板対向面に対向する位置に前記第１の側板部と同一平面上に並設された第２の側板部を有する第２のリードと、
前記第１のリードの前記ダイボンディング部の内面の一部及び外面と前記第１の側板部の外面、及び、前記第２のリードの前記ワイヤボンディング部の内面の一部及び外面と前記第２の側板部の外面の夫々を除く部分を、前記第１のリード及び前記第２のリードに沿って一体に覆う樹脂部と、
前記ダイボンディング部の表面の前記樹脂部から露出した部分にダイボンディングされた光半導体素子と、前記光半導体素子の電極と前記ワイヤボンディング部の表面の前記樹脂部から露出した部分を接続するボンディングワイヤと、
前記樹脂部で囲まれた領域を満たす、絶縁性及び透光性を有する封止樹脂と、を備え、
前記第１のリードは、前記ダイボンディング部の前記一端部の対向位置に位置する他端部から前記光入出射面と反対方向に直角に折曲突出された第１の背面電極部、及び／又は、前記第１の側壁部の端部から前記光入出射面と隣接し且つ前記基板対向面に垂直な面に沿って該基板対向面方向に直角に折曲されて外面を除く部分が前記樹脂部に一体に覆われる側面部と、前記側面部の端部から該基板対向面方向に水平に折曲げられ突出する第１の側面電極部を有し、
前記第２のリードは、前記ワイヤボンディング部の前記一端部の対向位置に位置する他端部から前記光入出射面と反対方向に直角に折曲突出された第２の背面電極部、及び／又は、前記第２の側壁部の端部から前記光入出射面と隣接し且つ前記基板対向面に垂直な面に沿って該基板対向面方向に直角に折曲されて外面を除く部分が前記樹脂部に一体に覆われる側面部と、前記側面部の端部から該基板対向面方向に水平に折曲げられ突出する第２の側面電極部を有し、
前記第１の背面電極部、前記第２の背面電極部、前記第１の側面電極部及び前記第２の側面電極部は夫々前記基板対向面から該基板対向面の垂直方向の前記光半導体素子側に所定の距離を置いた位置に位置していることを特徴とする略矩形状でサイドビュータイプの光半導体装置。 A flat die bonding portion positioned parallel to the light incident / exit surface at a position facing the light incident / exit surface, and a substrate bent from the one end of the die bonding portion at a right angle to the light incident / exit surface direction; A first lead having a first side plate located parallel to the substrate facing surface at a position facing the substrate facing surface on the side facing the substrate during mounting;
A flat wire bonding portion arranged in the same plane as the first die bonding portion at a position facing the light incident / exit surface, and folded at a right angle from the one end of the wire bonding portion toward the light incident / exit surface. A second lead that is bent and has a second side plate portion arranged in parallel with the first side plate portion at a position facing the substrate facing surface;
Part and outer surface of the inner surface of the die bonding portion of the first lead and the outer surface of the first side plate portion, and part and outer surface of the inner surface of the wire bonding portion of the second lead and the second surface. A resin portion that integrally covers a portion excluding each of the outer surfaces of the side plate portion along the first lead and the second lead;
An optical semiconductor element die-bonded to a portion exposed from the resin portion on the surface of the die bonding portion, and a bonding wire connecting an electrode of the optical semiconductor element and a portion exposed from the resin portion on the surface of the wire bonding portion When,
An insulating resin and a translucent sealing resin that fill the region surrounded by the resin portion,
The first lead includes a first back electrode portion that is bent at a right angle in a direction opposite to the light incident / exit surface from the other end located at a position opposite to the one end of the die bonding portion, and / or Alternatively, the portion excluding the outer surface by being bent at right angles to the substrate facing surface direction along the surface that is adjacent to the light incident / exiting surface and is perpendicular to the substrate facing surface from the end portion of the first side wall portion A side part integrally covered with the resin part, and a first side electrode part that is bent horizontally and protrudes from the end of the side part toward the substrate facing surface,
The second lead includes a second back electrode portion that is bent at a right angle in a direction opposite to the light incident / exit surface from the other end located at a position opposite to the one end of the wire bonding portion, and / or Alternatively, the portion excluding the outer surface by being bent at right angles to the substrate facing surface direction along the surface that is adjacent to the light incident / exiting surface and is perpendicular to the substrate facing surface from the end of the second side wall portion, A side surface portion integrally covered with the resin portion, and a second side surface electrode portion that is bent horizontally and protrudes from the end portion of the side surface portion toward the substrate facing surface,
The first back electrode portion, the second back electrode portion, the first side electrode portion, and the second side electrode portion are each in the direction perpendicular to the substrate facing surface from the substrate facing surface. A side view type optical semiconductor device having a substantially rectangular shape, wherein the optical semiconductor device is located at a predetermined distance on the side. 前記第１の背面電極部、前記第２の背面電極部、前記第１の側面電極部及び前記第２の側面電極部はいずれも前記基板対向面に水平な同一面上にあることを特徴とする請求項１に記載の略矩形状でサイドビュータイプの光半導体装置。   The first back electrode part, the second back electrode part, the first side electrode part, and the second side electrode part are all on the same plane horizontal to the substrate facing surface. The side-view type optical semiconductor device according to claim 1. 前記基板対向面から前記第１の背面電極部、前記第２の背面電極部、前記第１の側面電極部及び前記第２の側面電極部までの夫々の所定の距離は、いずれも１０〜２５μｍの範囲であることを特徴とする請求項２に記載の略矩形状でサイドビュータイプの光半導体装置。   Each predetermined distance from the substrate facing surface to the first back electrode portion, the second back electrode portion, the first side electrode portion, and the second side electrode portion is 10 to 25 μm. The substantially rectangular side-view type optical semiconductor device according to claim 2, wherein the optical semiconductor device is a side-view type.
JP2012209709A 2012-09-24 2012-09-24 Optical semiconductor device Pending JP2014067740A (en)

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Cited By (4)

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JP2021510007A (en) * 2017-10-27 2021-04-08 ラディアント オプト‐エレクトロニクス （スーチョウ） カンパニー リミテッド LED light source module and its manufacturing method
US11686896B2 (en) 2017-10-27 2023-06-27 Radiant Opto-Electronics(Suzhou) Co., Ltd. LED light source module
WO2023225944A1 (en) * 2022-05-26 2023-11-30 京东方科技集团股份有限公司 Light emitting substrate and display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200067977A (en) * 2016-12-01 2020-06-15 에피스타 코포레이션 Light-emitting device
KR102506250B1 (en) 2016-12-01 2023-03-03 에피스타 코포레이션 Light-emitting device
JP2021510007A (en) * 2017-10-27 2021-04-08 ラディアント オプト‐エレクトロニクス （スーチョウ） カンパニー リミテッド LED light source module and its manufacturing method
US11686896B2 (en) 2017-10-27 2023-06-27 Radiant Opto-Electronics(Suzhou) Co., Ltd. LED light source module
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