KR20170045544A - Light emitting diode package and manufacturing method of the same - Google Patents

Light emitting diode package and manufacturing method of the same Download PDF

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Publication number
KR20170045544A
KR20170045544A KR1020150145214A KR20150145214A KR20170045544A KR 20170045544 A KR20170045544 A KR 20170045544A KR 1020150145214 A KR1020150145214 A KR 1020150145214A KR 20150145214 A KR20150145214 A KR 20150145214A KR 20170045544 A KR20170045544 A KR 20170045544A
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KR
South Korea
Prior art keywords
substrate
lead
light emitting
emitting diode
diode chip
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Application number
KR1020150145214A
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Korean (ko)
Inventor
마사미 네이
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서울반도체 주식회사
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Priority to KR1020150145214A priority Critical patent/KR20170045544A/en
Publication of KR20170045544A publication Critical patent/KR20170045544A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting diode package and a manufacturing method thereof. The light emitting diode package according to the present invention comprises: a substrate; a first lead which is formed on one side of the substrate; a second lead which is disposed to be separated from the first lead, and is formed on the other side of the substrate; a light emitting diode chip which is disposed on the first lead and the second lead to be electrically connected to the first lead and the second lead; a housing which is formed above the substrate, and is formed to surround the light emitting diode chip; a wavelength conversion unit which is formed at the upper portion of the light emitting diode chip. The first lead and the second lead are formed to contact the lateral surface and the lower surface of the substrate and are formed to protrude outwards from the lateral surface of the substrate. According to the present invention, curved surfaces of the leads of the light emitting diode package are relatively increased, widening the contact areas of the leads and solder portion, so it is possible to more stably mount the light emitting diode package on electrodes of an external substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode package,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode package and a method of manufacturing the same. More particularly, the present invention relates to a light emitting diode package capable of reducing a defect rate of surface mounting of the light emitting diode package.

The light emitting diode package can be roughly divided into a top light emitting diode package and a side view light emitting diode package. Among these, the side view light emitting diode package is widely used as a light source for a backlight of a display device in which light is incident on a side surface of a light guide plate. In recent years, the side-view light-emitting diode package has been used for various purposes besides the backlight of the conventional display device.

Typically, the side view light emitting diode package includes a cavity for mounting the light emitting diode chip on the front surface of the housing, and the leads extend outward from the inside of the housing through the bottom surface of the housing and are electrically connected to the light emitting diode chip in the cavity. At this time, the leads in the housing are called internal leads, and the leads exposed to the outside of the housing are called external leads.

1 is a view showing a conventional light emitting diode package.

1, a conventional LED package 10 is mounted on electrodes 14 of an external substrate such that light emitted from the LED package 10 is emitted in a horizontal direction.

The outer leads 12 are formed to bend under the bottom surface of the housing 11. When the bottom surface of the housing 11 defines the surface on which light is emitted from the LED package 10 as an upper surface, Respectively. Whereby the outer leads 12 are formed on a part of the top surface, the side surface and the bottom surface of the housing 11. That is, the external leads 12 are not formed between the electrodes 14 and the housing 11 in a state where the light emitting diode package 10 is positioned on the upper surface of the electrodes 14, (14).

In this state, the LED package 10 is disposed on the upper surface of the electrodes 14 and is electrically connected to the electrodes of the external substrate by soldering or the like. As shown in FIG. 1, the external leads 12 exposed to the outside in the conventional LED package 10 are soldered to the external substrate in a state where the external leads 12 are formed on both sides and the bottom of the housing 11. So that the solder portion 13 can be soldered to a portion of the leads 12 while the light emitting diode package 10 is positioned above the electrodes 14. [

As the solder portion 13 is formed as described above, the contact area between the leads 12 and the solder portion 13 of the light emitting diode package 10 is insufficient to cause an impact on the external substrate in a subsequent process, tilting or the like is applied to the LED package 10, there is a problem that the light emitting diode package 10 is disconnected from the electrodes 14 electrically.

Japanese Patent No. 5365252 (2013.09.20)

One of the problems to be solved by the present invention is to provide a light emitting diode package that can be stably coupled when the light emitting diode package is mounted on the electrodes of the external substrate and a method of manufacturing the same.

The present invention provides a semiconductor device comprising: a substrate; A first lead formed on one side of the substrate; A second lead disposed on the other side of the substrate, the second lead being spaced apart from the first lead; A light emitting diode chip disposed on the first lead and the second lead so as to be in electrical contact with the first lead and the second lead, respectively; A housing formed on the substrate to surround the light emitting diode chip; And a wavelength conversion unit formed on an upper portion of the LED chip, wherein the first lead and the second lead are formed so as to be in contact with a side surface and a bottom surface of the substrate, respectively, Diode package.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: coating a metal material on opposite sides of a substrate; Forming at least one slit of the substrate coated with the metal material; Removing the coated metal material on either side of the substrate; Bonding a metal plate to the substrate from which the metal material has been removed; Forming a pattern for mounting the light emitting diode chip on the bonded metal plate; Mounting one or more light emitting diode chips on the formed pattern; Forming a wavelength conversion unit on the at least one light emitting diode chip; Molding the resin to surround the at least one light emitting diode chip and the wavelength converting portion; And cutting the light emitting diode package with reference to the at least one light emitting diode chip.

According to the present invention, the contact area between the leads and the solder portion is widened by relatively increasing the curved surface of the leads of the LED package, so that when the LED package is mounted on the electrodes of the external substrate, There is an effect that can be.

1 is a view showing a conventional light emitting diode package.
2 is a perspective view illustrating a light emitting diode package according to an embodiment of the present invention.
3 is a view illustrating a process of soldering an LED package according to an embodiment of the present invention to an external electrode.
4 is a view for explaining a method of manufacturing a light emitting diode package according to an embodiment of the present invention.

A light emitting diode package according to an embodiment of the present invention includes a substrate; A first lead formed on one side of the substrate; A second lead disposed on the other side of the substrate, the second lead being spaced apart from the first lead; A light emitting diode chip disposed on the first lead and the second lead so as to be in electrical contact with the first lead and the second lead, respectively; A housing formed on the substrate to surround the light emitting diode chip; And a wavelength conversion unit formed on an upper portion of the LED chip, wherein the first lead and the second lead are formed to be in contact with the side surface and the bottom surface of the substrate, respectively, and protrude outward from the side surface of the substrate .

At this time, the first lead and the second lead may be formed to have a width larger than the width of the substrate of the housing, and the first and second leads may be formed to contact the lower surface of the housing deviated from the position of the substrate.

And each of the first lead and the second lead includes: a lead upper portion formed to cover a part of an upper surface of the substrate; A lead side portion extending from the upper portion of the lead and covering the side surface of the substrate; And a lower portion of the lead extending from the lead side portion and configured to cover a part of the lower surface of the substrate. The upper portion of the lead may protrude outside the substrate to cover a part of the upper surface of the substrate.

The upper surface of the upper portion of the lead may be in contact with a lower surface of the housing.

In addition, the housing may be formed with a groove for exposing a part of the upper surface of the substrate between the substrate and the substrate, and the upper portion of the lead may be formed in the groove to cover a part of the upper surface of the exposed substrate.

The light emitting diode chip may be spaced apart from the substrate by the housing, and the housing may be formed between the light emitting diode chip and the substrate. The housing may be formed of a white resin reflecting light emitted from the light emitting diode chip.

The surface exposed to the outside of the first lead and the second lead may be coated with a conductive material, and the housing may be formed to surround the wavelength converting portion.

According to another aspect of the present invention, there is provided a method of fabricating a light emitting diode package, including: coating a metal material on opposite sides of a substrate; Forming at least one slit of the substrate coated with the metal material; Removing the coated metal material on either side of the substrate; Bonding a metal plate to the substrate from which the metal material has been removed; Forming a pattern for mounting the light emitting diode chip on the bonded metal plate; Mounting one or more light emitting diode chips on the formed pattern; Forming a wavelength conversion unit on the at least one light emitting diode chip; Molding the resin to surround the at least one light emitting diode chip and the wavelength converting portion; And cutting the light emitting diode chip based on the one or more light emitting diode chips.

In this case, the first step of molding the resin on the upper part of the metal plate such that the upper surface of the at least one light emitting diode chip is exposed before the wavelength conversion part is formed; And dicing a portion of the wavelength converting portion and the first molding resin after the wavelength converting portion is formed, and the step of molding the resin may be a second molding.

The dicing may be performed based on the at least one light emitting diode chip.

The method may further include forming a groove having a length in one direction by removing the metal material coated on the rear surface of the substrate to which the metal plate is bonded.

The method may further include coating a conductive material on the metal plate and the coated metal material before mounting the at least one light emitting diode chip.

Preferred embodiments of the present invention will be described more specifically with reference to the accompanying drawings.

FIG. 2 (a) is a perspective view illustrating a light emitting diode package according to an embodiment of the present invention, and FIG. 2 (b) is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention.

2, the light emitting diode package 100 according to an exemplary embodiment of the present invention includes a substrate 110, a light emitting diode chip 120, a first lead 132 and a second lead 134, A housing 140 and a wavelength converter 150.

The substrate 110 may have a mounting region in which the light emitting diode chip 120 is mounted and the first and second leads 132 and 134 may be coupled to the substrate 110. The substrate 110 may be a metal PCB favoring heat dissipation, and may be formed as a bar type having a long axis and a short axis. In an embodiment of the present invention, the substrate 110 may be a printed circuit board having a plurality of conductive patterns.

The first lead 132 and the second lead 134 are coupled to the substrate 110 and are respectively formed to contact a part of the upper surface of the substrate 110, a side surface of the substrate 110, . The first lead 132 and the second lead 134 may be formed at positions opposite to each other with respect to the substrate 110 and may have a shape that is opposite to each other with respect to the substrate 110.

The upper portion 134u of the second lead 134 covers a part of the upper surface of the substrate 110 so that the upper portion 134u of the second lead 134 covers the upper surface of the substrate 110. [ And the remainder is formed so as to protrude to the outside of the substrate 110. The side portion 134s of the second lead 134 extends from the lower surface of the upper portion 134u to the lower surface of the substrate 110 and is formed to be in contact with the side surface of the substrate 110. [ The lower portion 134d of the second lead 134 extends along the lower surface of the substrate 110 at the side portion 134s and is formed to cover a part of the lower surface of the substrate 110. [ As described above, the second lead 134 may be formed in the same shape as a tau (?) Of a Greek letter.

In other words, the second lead 134 may be formed in a shape that encloses a side surface and a part of a top surface and a bottom surface of the substrate 110, and may protrude outward from the top surface of the substrate 110. At this time, the width of the second lead 134 may be the same as the width of the housing 140.

The first lead 132 and the second lead 134 may be formed in a shape and a position opposite to each other with respect to the substrate 110 in the shape of the second lead 134, (Not shown).

The light emitting diode chip 120 is a type of semiconductor device that emits light of a predetermined wavelength by an external power source, and may include one or more semiconductor devices. The LED chip 120 may be electrically connected to the first lead 132 and the second lead 134 by SMT (Surface Mount Technology). Accordingly, the wire may not be used for electrical connection to the light emitting diode chip 120 without using a separate wire, so that a molded part for wire protection is not required.

The housing 140 is formed so as to surround the LED chip 120 as shown in FIGS. 2A and 2B. The first and second leads 132 and 132 are formed on the substrate 110, 2 leads 134. [0031] As shown in FIG. Accordingly, the housing 140 can protect the light emitting diode chip 120, and the first lead 132 and the second lead 134 can be electrically isolated from each other. Accordingly, the housing 140 may be made of a polyphthalamide (PPA) resin, and a PA9T (polyamide 9t) resin may be used. In addition, heat-resistant PCT series resins may be used.

A groove may be formed in the upper portion of the housing 140 (the direction in which the light emitted from the light emitting diode chip 120 is emitted) to which the wavelength converting portion 150 can be coupled, and the wavelength converting portion 150 may be formed in the light emitting diode chip 120, respectively. The inner surface of the housing 140 may serve as a reflecting portion. That is, the inner surface of the housing 140 can reflect light so that the light emitted from the LED chip 120 can be emitted only in one direction.

As described above, the wavelength conversion unit 150 is formed on the light emitting diode chip 120, and is formed to be in contact with the upper surface of the light emitting diode chip 120, and is formed to be larger than the width of the light emitting diode chip 120 do. At this time, the wavelength tunable phosphor may include a phosphor. The phosphor can wavelength-convert the light emitted from the light emitting diode chip 120.

As described above, the wavelength conversion unit 150 may be formed so as to be surrounded by the housing 140 in a state where the wavelength conversion unit 150 is disposed on the LED chip 120. Accordingly, light passing through the wavelength conversion unit 150 is reflected by the inner wall of the housing 140, and light can be emitted only in one direction.

3 is a view illustrating a process of soldering an LED package according to an embodiment of the present invention to an external electrode.

Soldering of the light emitting diode package 100 according to an embodiment of the present invention to the first electrode 212 and the second electrode 214 of the external substrate will be described with reference to FIG.

3 (a), the light emitted from the LED chip 120 may be emitted in the horizontal direction of the first electrode 212 and the second electrode 214 according to an embodiment of the present invention. A light emitting diode package 100 is disposed. That is, the first electrode 132 and the second electrode 214 are brought into contact with the side surface of the housing 140 where the first lead 132 and the second lead 134 are not formed in the housing 140, (100).

At this time, as shown in FIG. 3 (b), the first electrode 212 and the second electrode 214 are each formed with an uncured solder portion 200 (which may be in the form of a viscous liquid) The light emitting diode package 100 is in contact with the first electrode 212 and the second electrode 214 while covering the solder part 200. 3C, the unhardened solder part 200 is moved along the surfaces of the first lead 132 and the second lead 134 of the LED package 100, The light emitting diode package 100 may be electrically connected to the electrode 212 and the second electrode 214. The light emitting diode package 100 may be coupled to the first electrode 212 and the second electrode 214 as the solder portion 200 is cured.

The first lead 132 of the light emitting diode package 100 is electrically connected to the first electrode 212 and the second lead 134 is electrically connected to the second electrode 134 of the light emitting diode package 100. In this case, And may be electrically connected to the electrode 214. Here, the first electrode 212 and the second electrode 214 may be electrically isolated from each other.

4 is a view for explaining a method of manufacturing a light emitting diode package according to an embodiment of the present invention.

A method of manufacturing the light emitting diode package 100 according to an embodiment of the present invention will be described with reference to the drawing shown in FIG.

As shown in FIG. 4A, the first metal plate 21 and the second metal plate 23 are bonded to both sides of the substrate 110 having a predetermined thickness. At this time, the first metal plate 21 is coupled to the lower surface of the substrate 110, the second metal plate 23 is coupled to the upper surface of the substrate 110, and the positions of the first metal plate 21 and the second metal plate 23 May be changed. Here, the first metal plate 21 and the second metal plate 23 may be coated on the substrate 110 in the form of a thin film. The first metal plate 21 and the second metal plate 23 may each include a metal, for example, copper (Cu).

Then, as shown in FIG. 4B, two slits S1 and S2 passing through the first metal plate 21, the substrate 110, and the second metal plate 23 are formed. The first slit S1 and the second slit S2 have a predetermined width and are formed to have a length in one direction. The first slit S1 and the second slit S2 have a predetermined width, The slit S2 is formed to be spaced apart from a predetermined distance.

Then, the second metal plate 23 coupled to the upper surface of the substrate 110 is etched and removed. So that the top surface of the substrate 110 can be exposed, as shown in FIG. 4C. Here, a part of the substrate 110 may also be etched in the course of etching the second metal plate 23.

As described above, the third metal plate 25 is bonded to the exposed surface of the substrate 110 by etching, and is formed as shown in FIG. 4D. The pattern portion P is formed on the third metal plate 25 in a state where the third metal plate 25 is coupled to the substrate 110. The pattern portion P is formed in the longitudinal direction of the first slit S1 and the second slit S2 at positions between the first slit S1 and the second slit S2 as shown in FIG. , And protrusions to be protruded inward are formed at regular intervals. The protrusions of the pattern portion P are formed on both sides of the pattern portion P in a shape protruding from the inner surface of the groove of the patter portion and a plurality of protrusions may be formed at positions corresponding to each other.

A groove (H) is formed in the first metal plate (21) formed on the lower surface of the substrate (110). The groove portion H is formed between the first slit S1 and the second slit S2 and is formed in the longitudinal direction of the first slit S1 and the second slit S2. The groove portion H is formed to have a width smaller than the width of the first slit S1 and the second slit S2 and is formed by etching only the first metal plate 21. [ Accordingly, the substrate 110 can be exposed to the outside through the trench H.

Then, a metal coating is formed on the lower surface of the substrate 110. The metal coating may be coated with the same metal as the first metal plate 21, and copper may be coated in an embodiment of the present invention. At this time, the metal coating may be formed on the inner surfaces of the first slit S1 and the second slit S2 except for the trench H. As the metal coaching is performed, the first metal plate 21 and the third metal plate 25 can be electrically connected to each other through the first slit S1 and the second slit S2.

4F, the entirety including the inner surfaces of the first slit S1 and the second slit S2 except for the substrate 110 exposed by the trench H is formed to be covered with the metal . Here, FIG. 4F is a view showing the back surface of the shape of FIG. 4E.

In the state that the pattern portion P and the groove portion H are formed in the first metal plate 21 and the third metal plate 25 in this way, the entirety of the first metal plate 21 and the third metal plate 25 is again covered with the conductive metal (C) can be coated. At this time, the coating member C to be coated may be a metal or an alloy containing at least one of nickel (Ni) and gold (Au). Or nickel and gold may be sequentially stacked and coated. 4G is a view showing a top surface of the substrate 110 on which the coating member C is coated, that is, a third metal plate 25, and FIG. 4H is a view showing the surface of the substrate 110 coated with the coating member C That is, the first metal plate 21 is shown.

Since the coating member C is coated only on the first metal plate 21 and the third metal plate 25, the substrate 110 exposed by the pattern portion P and the substrate 110 exposed by the groove H, The coating member C is not coated.

4I, the adhesive member D is formed on the pattern portion P formed on the third metal plate 25 while the coating member C is coated, and the adhesive member D is formed on the pattern portion P formed on the third metal plate 25, And the light emitting diode chip 120 is coupled to the upper portion. The bonding member D is not limited to any material that can electrically connect the LED chip 120 and the third metal plate 25 while fixing the LED chip 120 to the third metal plate 25. [ The bonding member D may be formed on the protruding protrusions of the pattern unit P so that the light emitting diode chip 120 is coupled in a direction across the pattern unit P. [ Accordingly, as shown in FIG. 4J, a plurality of LED chips 120 can be fixed to the pattern portion P of the third metal plate 25.

After the light emitting diode chip 120 is fixed to the third metal plate 25, the resin part 27 may be molded on the upper surface of the third metal plate 25. In this case, the resin part 27 to be molded may be made of a white silicone resin, and molding is performed using the liquid resin part 27, The light emitting diode chip 120 may be formed on the third metal plate 25 together with the light emitting diode chip 110.

The resin part 27 may be formed to be in contact with the lower surface of the light emitting diode chip 120 that is not in contact with the third metal plate 25. [ 4K, the resin part 27 is formed so as to surround the light emitting diode chip 120 without covering the upper surface of the light emitting diode chip 120, so that the upper surface of the light emitting diode chip 120 can be exposed have.

The resin part 27 may be formed on the entirety of the third metal plate 25 or may be formed so as to cover only a part of the third metal plate 25 and may include a position including an upper portion of the first slit S1 and a second slit S2 .

As described above, the wavelength converting portion 150 may be formed to cover the upper surface of the resin portion 27 in a state where the resin portion 27 is formed. The wavelength converting portion 150 is formed to cover the entire resin portion 27 and is formed to be in contact with the upper surface of the LED chip 120 exposed by the resin portion 27 as shown in FIG.

Then, the wavelength conversion unit 150 and the resin unit 27 are diced, and half cut dicing is performed so that only a part of the resin unit 27 is diced as shown in FIG. 4M . The dicing in this process may be performed to have a pattern at regular intervals based on one light emitting diode chip 120.

Then, the resin part 27 may be molded so as to cover the upper part of the diced wavelength conversion part 150. Accordingly, the resin part 27 may be formed to fill the spaces between the diced wavelength conversion parts 150, and may be integrally formed with the resin part 27 that has been formed as shown in FIG. 4n.

After the formed resin part 27 is cured, a process of grinding the upper surface of the resin part 27 is performed. At this time, the wavelength conversion part 150 can be grinded to be exposed to the outside. Accordingly, as shown in FIG. 4O, the wavelength conversion units 150 may be exposed, and the wavelength conversion units 150 may be spaced apart at regular intervals.

Then, as shown in FIG. 4P, cutting is performed in the vertical direction so that the thickness of the resin portion 27 surrounding the wavelength converter 150 based on the respective wavelength converters 150 is constant. FIG. 4P shows a vertically cut shape so that one light emitting diode package 100 can be manufactured, as shown in FIG. 4Q.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It should be understood that the scope of the present invention is to be understood as the scope of the following claims and their equivalents.

100: Light emitting diode package
110: substrate 120: light emitting diode chip
132: first lead 134: second lead
140: housing 150: wavelength converter
200: solder part 212: first electrode
214: second electrode
21: first metal plate 23: second metal plate
S1, S2: First and second slits
25: third metal plate C: coating member
P: pattern portion H: groove portion
D: Adhesive member 27:

Claims (16)

Board;
A first lead formed on one side of the substrate;
A second lead disposed on the other side of the substrate, the second lead being spaced apart from the first lead;
A light emitting diode chip disposed on the first lead and the second lead so as to be in electrical contact with the first lead and the second lead, respectively;
A housing formed on the substrate to surround the light emitting diode chip; And
And a wavelength conversion unit formed on the light emitting diode chip,
Wherein the first lead and the second lead are formed so as to be in contact with side surfaces and a bottom surface of the substrate, respectively, and protrude outward from a side surface of the substrate. The method according to claim 1,
The width of the substrate being larger than the width of the substrate of the housing,
Wherein the first lead and the second lead are brought into contact with a lower surface of the housing which is out of position of the substrate. [2] The apparatus of claim 1, wherein each of the first lead and the second lead includes:
A lead upper portion formed to cover a part of the upper surface of the substrate;
A lead side portion extending from the upper portion of the lead and covering the side surface of the substrate; And
And a lower portion of the lead extending from the lead side portion and configured to cover a part of the lower surface of the substrate. The method of claim 3,
And the upper portion of the lead protrudes outside the substrate to cover a part of the upper surface of the substrate. The method of claim 4,
The width of the substrate being larger than the width of the substrate of the housing,
And an upper surface of the lead upper portion is in contact with a lower surface portion of the housing. The method of claim 3,
Wherein the housing has grooves formed between the substrate and the substrate to expose a part of the upper surface of the substrate,
And the upper portion of the lead is located in the groove to cover a part of the upper surface of the exposed substrate. The method according to claim 1,
Wherein the light emitting diode chip is spaced apart from the substrate by the housing. The method of claim 7,
Wherein the housing is formed between the light emitting diode chip and the substrate. The method according to claim 1,
Wherein the housing is formed of a white resin that reflects light emitted from the light emitting diode chip. The method according to claim 1,
Wherein a surface of the first lead and the second lead exposed to the outside is coated with a conductive material. The method according to claim 1,
And the housing is configured to surround the wavelength converting portion. Coating a metal material on opposite sides of the substrate;
Forming at least one slit of the substrate coated with the metal material;
Removing the coated metal material on either side of the substrate;
Bonding a metal plate to the substrate from which the metal material has been removed;
Forming a pattern for mounting the light emitting diode chip on the bonded metal plate;
Mounting one or more light emitting diode chips on the formed pattern;
Forming a wavelength conversion unit on the at least one light emitting diode chip;
Molding the resin to surround the at least one light emitting diode chip and the wavelength converting portion; And
And cutting the at least one light emitting diode chip with reference to the at least one light emitting diode chip. The method of claim 12,
First molding the resin on the metal plate so that the upper surface of the at least one light emitting diode chip is exposed before forming the wavelength converter; And
Further comprising dicing a portion of the wavelength converting portion and the first molding resin after the wavelength converting portion is formed,
Wherein the molding of the resin is a second molding. 14. The method of claim 13,
Wherein the dicing step comprises dicing the at least one light emitting diode chip based on the at least one light emitting diode chip. The method of claim 12,
Further comprising forming a groove having a length in one direction by removing a metal material coated on a rear surface of the substrate to which the metal plate is bonded. The method of claim 12,
Further comprising coating a conductive material on the metal plate and the coated metal material before mounting the at least one light emitting diode chip.
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KR101971436B1 (en) * 2017-12-22 2019-04-23 주식회사 에이유이 COB type LED package capable of top view and side view mounting and manufacturing method thereof
JP2020129690A (en) * 2020-05-08 2020-08-27 日亜化学工業株式会社 Manufacturing method of light source device
JP2020150265A (en) * 2017-04-28 2020-09-17 日亜化学工業株式会社 Light-emitting module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020150265A (en) * 2017-04-28 2020-09-17 日亜化学工業株式会社 Light-emitting module
KR101971436B1 (en) * 2017-12-22 2019-04-23 주식회사 에이유이 COB type LED package capable of top view and side view mounting and manufacturing method thereof
JP2020129690A (en) * 2020-05-08 2020-08-27 日亜化学工業株式会社 Manufacturing method of light source device

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