JP2020129690A - Manufacturing method of light source device - Google Patents

Abstract

To provide a manufacturing method of a light source device capable of preventing a light-emitting device from being joined while inclining to a support substrate.SOLUTION: A manufacturing method of a light source device includes steps of: preparing a light-emitting device comprising a backing material having a front face, a back face, a top face, an undersurface, and multiple recesses opening to the back face and the undersurface, first wiring placed on the front face, and second wiring placed in the multiple recesses, and a light-emitting element placed on the first wiring; preparing a support substrate including a first wiring pattern having a junction region on the top face of the support substrate, and an insulation region surrounding the junction region; placing solder so that the maximum width of solder on the insulation region becomes wider than the maximum width of solder on the junction region; placing the light-emitting device on the support substrate while separating the solder and the second wiring near the undersurface in the top view; and joining the second wiring and the junction region.SELECTED DRAWING: Figure 9A

Description

The present invention relates to a method for manufacturing a light source device.

A substrate including a base portion provided with the opening portion and a mounting portion arranged so as to close the opening portion on the base portion, and an electrode exposed from the opening portion, and the electrode and the mother board are soldered together. A light emitting diode electrically connected is known (for example, refer to Patent Document 1).

JP, 2013-041865, A

It is an object of the present invention to provide a method for manufacturing a light source device that can prevent the light emitting device from being inclined and joined to a mother board (support substrate).

A method of manufacturing a light source device according to an aspect of the present invention includes a front surface extending in a lateral direction orthogonal to the longitudinal direction and a longitudinal direction, a back surface located on the opposite side of the front surface, adjacent to the front surface, and A base having an upper surface orthogonal to the front surface, a lower surface located on the opposite side of the upper surface, a plurality of recesses opening to the back surface and the lower surface; a first wiring arranged on the front surface; A substrate having a second wiring electrically connected to one wiring and arranged in each of the plurality of depressions, and at least electrically connected to the first wiring and placed on the first wiring. A supporting substrate comprising: a step of preparing a light emitting device including one light emitting element; a supporting base material; a wiring pattern including a bonding area on an upper surface of the supporting base material; and an insulating area surrounding the bonding area. A step of preparing, and a step of arranging solder on the bonding area and the insulating area so that the volume of the solder positioned on the insulating area is larger than the volume of the solder positioned on the bonding area, A step of placing the light emitting device on the support substrate while separating the solder from the second wiring located near the bottom surface in a top view; and heating and melting the solder to form a second wiring of the light emitting device. And a step of joining the joining region of the support substrate.

According to the method for manufacturing a light source device according to the present invention, it is possible to provide a light source device that can prevent the light emitting device from being inclined and joined to the support substrate.

FIG. 1A is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 1B is a schematic perspective view of the light emitting device according to the first embodiment. FIG. 2A is a schematic front view of the light emitting device according to the first embodiment. 2B is a schematic cross-sectional view taken along the line I-I of FIG. 2A. FIG. 2C is a schematic sectional view taken along line II-II of FIG. 2A. FIG. 3 is a schematic bottom view of the light emitting device according to the first embodiment. FIG. 4A is a schematic rear view of the light emitting device according to the first embodiment. FIG. 4B is a schematic rear view of a modification of the light emitting device according to the first embodiment. FIG. 5 is a schematic front view of the substrate according to the first embodiment. FIG. 6 is a schematic side view of the light emitting device according to the first embodiment. FIG. 7A is a schematic top view of the support substrate according to the first embodiment. 7B is a schematic cross-sectional view taken along the line III-III in FIG. 7A. FIG. 8A is a schematic top view of a modified example of the support substrate according to the first embodiment. FIG. 8B is a schematic cross-sectional view taken along the line IV-IV of FIG. 8A. FIG. 9A is a schematic top view illustrating the method for manufacturing the light source device according to the first embodiment. 9B is a schematic cross-sectional view taken along the line VV of FIG. 9A. FIG. 9C is a schematic sectional view illustrating the method for manufacturing the modification of the light source device according to the first embodiment. FIG. 9D is a schematic top view illustrating a modified example of the method for manufacturing the light source device according to the first embodiment. FIG. 9E is a schematic top view illustrating a modified example of the method for manufacturing the light source device according to the first embodiment. FIG. 9F is a schematic top view illustrating a modified example of the method for manufacturing the light source device according to the first embodiment. FIG. 10A is a schematic top view illustrating the method for manufacturing the light source device according to the first embodiment. FIG. 10B is a schematic cross-sectional view taken along line VI-VI of FIG. 10A. FIG. 10C is a schematic cross-sectional view illustrating the method for manufacturing the modification of the light source device according to the first embodiment. FIG. 11C is a schematic cross-sectional view illustrating the method for manufacturing the light source device according to the first embodiment. FIG. 12A is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 12B is a schematic perspective view of the light emitting device according to the second embodiment. FIG. 13A is a schematic front view of the light emitting device according to the second embodiment. FIG. 13B is a schematic cross-sectional view taken along the line VII-VII of FIG. 13A. FIG. 14 is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless specified otherwise. Further, the contents described in one embodiment can be applied to other embodiments and modified examples. Further, the size and positional relationship of members shown in the drawings may be exaggerated for clarity of explanation.

<Embodiment 1>
A method of manufacturing the light source device according to the first embodiment of the present invention will be described with reference to FIGS. 1A to 11.

The method for manufacturing the light emitting device according to the first embodiment is
(1) A front surface extending in the longitudinal direction and a lateral direction orthogonal to the longitudinal direction, a back surface located on the opposite side of the front surface, an upper surface adjacent to the front surface and orthogonal to the front surface, and a lower surface located on the opposite side of the upper surface. And a base material having a plurality of recesses opening to the back surface and the lower surface, a first wiring arranged on the front surface, and a second wiring arranged in each of the plurality of recesses electrically connected to the first wiring. And a substrate having
A step of preparing a light emitting device including at least one light emitting element electrically connected to the first wiring and mounted on the first wiring;
(2) a step of preparing a supporting substrate including a supporting base material, a wiring pattern including a bonding area on an upper surface of the supporting base material, and an insulating area surrounding the bonding area;
(3) a step of arranging the solder on the bonding area and the insulating area such that the volume of the solder positioned on the insulating area is larger than the volume of the solder positioned on the bonding area,
(4) a step of mounting the light emitting device on the support substrate with the solder and the second wiring located near the lower surface separated from each other in a top view,
(5) a step of heating and melting the solder to join the second wiring of the light emitting device and the joining region of the supporting substrate.

According to the manufacturing method of the light source device of the embodiment configured as described above, it is possible to suppress the formation of solder after heating and melting between the lower surface of the base material and the upper surface of the support substrate. it can. This can prevent the light emitting device from being inclined and joined to the support substrate.

(Process of preparing light emitting device)
As shown in FIG. 2B, a light emitting device 1000 including a substrate 10 and at least one light emitting element 20 is prepared. The substrate 10 includes a base material 11, a first wiring 12, and a second wiring 13. The base material 11 includes a front surface 111 extending in the longitudinal direction and a lateral direction orthogonal to the longitudinal direction, a back surface 112 located on the opposite side of the front surface, an upper surface 113 adjacent to the front surface and orthogonal to the front surface, and an opposite upper surface. And a lower surface 114 located on the side. Further, the base material 11 includes a back surface 112 and a bottom surface 11
4 and a plurality of recesses 16 that are open to each other. The first wiring 12 is arranged on the front surface 111 of the base material 11. The second wiring 13 is electrically connected to the first wiring 12 and is arranged in each of the plurality of recesses 16. In this specification, the term “perpendicular” means that a fluctuation of about 90±3° is allowed. In this specification, the longitudinal direction may be referred to as the X direction, the lateral direction may be referred to as the Y direction, and the rear surface 112 to the front surface 111 direction may be referred to as the Z direction.

The second wiring 13 of the substrate 10 and the joining region, which is a part of the wiring pattern of the support substrate, are joined by solder. The light emitting device has a plurality of second wirings 13 by disposing the second wirings in the plurality of recesses, respectively. Since the light emitting device has a plurality of second wirings, the bonding strength between the light emitting device and the support substrate can be improved more than in the case where the second wiring is one.

The depth of each of the plurality of depressions 16 is not particularly limited, but as shown in FIG. 2C, the depth of each of the plurality of depressions 16 in the Z direction is lower than the depth W2 of the depression on the upper surface 113 side in the lower surface 1.
The depth W1 of the depression on the 14 side is preferably deep. By doing so, the thickness W5 of the base material 11 located on the upper surface 113 side of the depression can be made larger than the thickness W6 of the base material located on the lower surface side of the depression in the Z direction. This makes it possible to prevent the strength of the base material from decreasing. Further, since the depth of the depression 16 in the Z direction is deeper on the lower surface 114 side than on the upper surface 113 side, the area of the opening of the depression 16 on the lower surface 114 of the base material 11 can be increased.
The lower surface 114 of the base material 11 and the upper surface of the support substrate face each other, and the light emitting device and the support substrate are joined by solder. By increasing the area of the opening of the depression on the lower surface of the base material facing the support substrate, the area of the solder located on the lower surface 114 side of the base material 11 can be increased. Thereby, the bonding strength between the light emitting device and the support substrate can be improved.

The recess 16 may penetrate the base material, and may not penetrate the base material 11 as shown in FIGS. 2B and 2C. Since the recess 16 does not penetrate the base material, the strength of the base material can be improved as compared with the case where the recess 16 penetrates the base material. When the recess 16 does not penetrate the base material, the maximum depth of each of the plurality of recesses in the Z direction is preferably 0.4 to 0.8 times the thickness W3 of the base material. When the depth of the recess is deeper than 0.4 times the thickness of the base material, the volume of solder formed in the recess can be increased, and thus the bonding strength between the light emitting device and the support substrate can be improved. .. Since the depth of the depression is shallower than 0.8 times the thickness of the base material, the strength of the base material can be improved.

In a cross-sectional view, the recess 16 preferably includes a parallel portion 161 extending in the Z direction. By providing the parallel portion 161, the volume of the recess 16 in the base material can be increased even if the area of the opening of the recess 16 on the back surface 112 is the same. By increasing the volume of the dent 16, the amount of solder that can be formed in the dent 16 can be increased, so that the bonding strength between the light emitting device 1000 and the support substrate can be improved. In this specification, parallel is ±3°.
Variation in the degree is allowed. Further, the recess 16 in the cross-sectional view is the lower surface 11 of the base material.
4 may be provided with an inclined portion 162 that inclines in the direction in which the thickness of the base material increases. Slope 1
62 may be straight or curved. Since the inclined portion 162 is straight, it can be easily formed by a drill having a sharp tip. The straight line in the inclined portion 162 is allowed to vary by about ±3 μm.

As shown in FIG. 3, on the lower surface of the base material, the depth R1 at the center of each of the plurality of recesses 16 is preferably the maximum depth of the recesses in the Z direction. By doing so, the thickness R2 of the base material in the Z direction can be increased at the end of the depression in the X direction on the lower surface, so that the strength of the base material can be improved. In this specification, the center is ±5
A variation of about μm is allowed. The depression 16 can be formed by a known method such as a drill or a laser. The depression having the maximum central depth on the lower surface can be easily formed by a drill having a sharp tip. Further, by using a drill, it is possible to form a recess having a substantially conical shape at the deepest portion and having a substantially cylindrical shape that is continuous from the circular shape of the bottom surface of the substantially conical shape. By cutting a part of the depression by dicing or the like, it is possible to form a depression having a substantially semi-cylindrical shape at the deepest portion and having a substantially semi-cylindrical shape continuous from the substantially semicircular shape. By doing so, as shown in FIG. 4A, the opening shape of the recess 16 can be made substantially semicircular on the back surface. Since the opening shape of the depression is a substantially semicircular shape without corners, the stress related to the depression can be prevented from being concentrated, so that the base material can be prevented from cracking.

On the back surface, each of the plurality of depressions 16 may have different shapes, and on the back surface, each of the plurality of depressions 16 may have the same shape, as shown in FIG. 4A. Since the shapes of the plurality of depressions are the same, the formation of the depressions is easier than when the shapes of the depressions are different from each other. For example, in the case of forming the depression by the drilling method, if the plurality of depressions have the same shape, the depression can be formed by one drill. still,
In the present specification, “identical” means that a fluctuation of about ±5 μm is allowed.

As shown in FIG. 4A, it is preferable that each of the plurality of recesses 16 on the back surface be located symmetrically with respect to the center line C1 of the base material parallel to the Y direction. By doing so, self-alignment effectively works when the light emitting device is bonded to the supporting substrate via the solder, and the light emitting device can be mounted on the supporting substrate with high accuracy.

As shown in FIG. 2B, the substrate 10 may include the third wiring 14 arranged on the back surface 112 of the base material 11. In addition, the substrate 10 may include a via 15 that electrically connects the first wiring 12 and the third wiring 14. The via 15 is provided in a hole penetrating the front surface 111 and the back surface 112 of the base material 11. The via 15 includes a fourth wiring 151 that covers the surface of the through hole of the base material and a filling member 152 that is filled inside the fourth wiring 151. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152. In general, the resin material before curing has higher fluidity than the metal material before curing, and thus it is easy to fill the inside of the fourth wiring 151. Therefore, the use of the resin material for the filling member facilitates the manufacture of the substrate.
Examples of the resin material that can be easily filled include epoxy resin. When a resin material is used as the filling member, it is preferable to contain an addition member in order to reduce the linear expansion coefficient. By doing so, the difference between the linear expansion coefficient of the fourth wiring and the linear expansion coefficient of the filling member becomes small, so that it is possible to suppress the formation of a gap between the fourth wiring and the filling member due to heat from the light emitting element. it can. Examples of the addition member include silicon oxide. Further, when a metal material is used for the filling member 152, heat dissipation can be improved.

As shown in FIGS. 2B and 4A, the via 15 and the recess 16 may be in contact with each other, and as in the light emitting device 1001 shown in FIG. 4B, the via 15 and the recess 16 may be separated from each other. Beer 15
Since the fourth wiring 151 and the second wiring can be brought into contact with each other by contacting the recess 16 with each other, heat dissipation of the light emitting device can be improved. By separating the via 15 and the dent 16 from each other, the strength of the base material can be improved more than when the via 15 and the dent 16 are in contact with each other.

As shown in FIG. 2B, the light emitting element 20 is arranged on the first wiring 12. Light emitting device 100
0 may include at least one light emitting element 20. The light emitting element 20 includes a mounting surface facing the substrate 10, and a light extraction surface 201 located on the opposite side of the mounting surface. Light emitting element 2
0 includes at least the semiconductor laminated body 23, and the semiconductor laminated body 23 is provided with the device electrodes 21 and 22. The light emitting element 20 may be flip-chip mounted on the substrate 10. As a result, a wire for supplying electricity to the element electrode of the light emitting element is not needed, so that the light emitting device can be downsized. When the light emitting element 20 is flip-chip mounted, the light emitting element 20
Of the electrode forming surface 203 on which the device electrodes 21 and 22 of FIG.
And Although the light emitting element 20 has the element substrate 24 in the present embodiment, the element substrate 24 may not be provided. When the light emitting element 20 is flip-chip mounted on the substrate 10, the element electrodes 21 and 22 of the light emitting element are electrically connected to the first wiring 12 via the conductive adhesive member 60.

The light emitting element 20 may be arranged such that the surface opposite to the electrode formation surface on which the element electrode is located faces the substrate. In this case, the electrode formation surface becomes the light extraction surface. The light emitting device is
A wire may be provided to electrically connect the element electrode of the light emitting element and the first wiring in order to supply electricity to the light emitting element.

When the light emitting element 20 is flip-chip mounted on the substrate 10, it is preferable that the first wiring 12 includes the convex portion 121 as shown in FIGS. 2B and 5. In top view, the first
The convex portion 121 of the wiring 12 is located at a position overlapping the device electrodes 21 and 22 of the light emitting device 20.
By doing so, when a meltable adhesive is used as the conductive adhesive member 60,
When connecting the convex portion 121 of the wiring and the element electrodes 21 and 22 of the light emitting element, the light emitting element and the substrate can be easily aligned due to the self-alignment effect.

As shown in FIG. 2B, the light emitting device 1000 may include a reflection member 40 that covers the element side surface 202 of the light emitting element 20 and the front surface 111 of the base material. Element side surface 202 of light emitting element 20
By covering the reflective member with a light-emitting region, the contrast between the light-emitting region and the non-light-emitting region becomes high, and a light-emitting device having a good “partition property” can be obtained.

As a material of the reflecting member 40, for example, a member in which a base material contains a white pigment can be used. As the base material of the reflecting member 40, it is preferable to use a resin, and for example, it is preferable to use a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof. In particular, as the base material of the reflecting member 40,
It is preferable to use a silicone resin having excellent heat resistance and light resistance. Further, as the base material of the reflecting member 40, an epoxy resin having higher hardness than a silicone resin may be used. By doing so, the strength of the light emitting device can be improved.

Examples of the white pigment of the reflecting member 40 include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, and aluminum hydroxide. ,
One of aluminum oxide, zirconium oxide, silicon oxide, or the like can be used alone, or two or more of these can be used in combination. The shape of the white pigment can be appropriately selected and may be indefinite or crushed, but from the viewpoint of fluidity, it is preferably spherical. Further, the particle size of the white pigment is preferably, for example, about 0.1 μm or more and 0.5 μm or less. However, in order to enhance the effect of light reflectivity and covering property, the smaller the particle size of the white pigment, preferable. The content of the white pigment can be appropriately selected, but from the viewpoint of light reflectivity and viscosity in a liquid state, for example, 10 wt% to 80 wt% is preferable, and 20 wt% to 70 w.
t% or less is more preferable, and 30 wt% or more and 60 wt% or less is further preferable. In addition, "wt
"%" is a weight percentage and represents a ratio of the weight of the material to the total weight of the reflecting member.

As shown in FIG. 6, the longitudinal side surface 40 of the reflecting member 40 located on the lower surface 114 side of the base material.
4 is preferably inclined inward of the light emitting device 1000 in the Z direction. By doing so, when the light emitting device 1000 is mounted on the supporting substrate, the side surface 404 of the reflecting member 40 is mounted.
The contact between the light emitting device 1000 and the supporting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. The longitudinal side surface 403 of the reflecting member 40 located on the upper surface 113 side of the base material is preferably inclined inward of the light emitting device 1000 in the Z direction. By doing so, the contact between the side surface of the reflecting member 40 and the suction nozzle (collet) is suppressed, and damage to the reflecting member 40 when the light emitting device 1000 is sucked can be suppressed. Thus, the reflecting member 4 located on the lower surface 114 side
0 in the longitudinal direction and side surface 4 in the longitudinal direction of the reflecting member 40 located on the upper surface 113 side.
03 is preferably inclined inward of the light emitting device 1000 in the Z direction. The inclination angle θ of the reflecting member 40 can be appropriately selected, but it is easy to achieve such effects and the reflecting member 4
From the viewpoint of strength of 0, it is preferably 0.3° or more and 3° or less, more preferably 0.5° or more and 2° or less, and 0.7° or more and 1.5° or less. Even more preferable.

As shown in FIG. 2B, the light emitting device 1000 may include the translucent member 30. The transparent member 30 is preferably located on the light emitting element 20. Positioning the translucent member 30 on the light emitting element 20 can protect the light emitting element from external stress. The reflective member 40 preferably covers the side surface of the translucent member 30. By doing so, the contrast between the light emitting region and the non-light emitting region is increased, and a light emitting device having a good "partition property" can be obtained.

The translucent member 30 may be in contact with the light extraction surface 201, or may cover the light extraction surface 201 via the light guide member 50 as shown in FIG. 2B. The light guide member 50 may be positioned only between the light extraction surface 201 of the light emitting element and the light transmissive member 30 to fix the light emitting element 20 and the light transmissive member 30, or the light extraction surface 201 of the light emitting element. From the element side surface 202 of the light emitting element
Alternatively, the light emitting element 20 and the translucent member 30 may be fixed by covering them. The light guide member 50 has a higher transmittance of light from the light emitting element than the reflection member 40. Therefore, by covering the side surface of the light emitting element with the light guide member, the light emitted from the side surface of the light emitting element can be easily extracted to the outside of the light emitting device through the light guide member, and thus the light extraction efficiency can be improved.

The translucent member 30 may contain wavelength conversion particles. By doing so, color adjustment of the light emitting device becomes easy. The wavelength conversion particles are members that absorb at least a part of the primary light emitted by the light emitting element 20 and emit secondary light having a wavelength different from that of the primary light. By containing the wavelength conversion particles in the translucent member 30, it is possible to output mixed color light in which the primary light emitted by the light emitting element and the secondary light emitted by the wavelength conversion particles are mixed. For example, the light emitting element 20 has a blue L
If a fluorescent material such as YAG is used as the wavelength conversion particles for the ED, a light emitting device that outputs white light obtained by mixing the blue light of the blue LED with the yellow light emitted by the fluorescent material when excited by the blue light Can be configured. In addition, a blue LED is used for the light emitting element 20, a β-sialon-based fluorescent material that is a green fluorescent material, and a manganese-activated fluoride-based fluorescent material that is a red fluorescent material are used as wavelength conversion particles to configure a light emitting device that outputs white light. You may.

The wavelength conversion particles may be uniformly dispersed in the translucent member, or the wavelength conversion particles may be unevenly distributed in the vicinity of the light emitting element rather than the upper surface of the translucent member 30. Since the wavelength conversion particles are unevenly distributed in the vicinity of the light emitting element rather than the upper surface of the light transmissive member 30, the base material of the light transmissive member 30 functions as a protective layer even when the wavelength conversion particles weak in moisture are used. The deterioration of the wavelength conversion particles can be suppressed. Further, as shown in FIG. 2B, the translucent member 30 may include layers 31 and 32 containing wavelength conversion particles, and a layer 33 containing substantially no wavelength conversion particles. In the Z direction, the layer 33 that does not substantially contain the wavelength conversion particles is located above the layers 31 and 32 that contain the wavelength conversion particles. By doing so, since the layer 33 that does not substantially contain the wavelength conversion particles functions as a protective layer, deterioration of the wavelength conversion particles can be suppressed. Examples of the wavelength conversion particles that are weak against water include manganese-activated fluoride phosphor. The manganese-activated fluoride-based phosphor is
It is a preferable member from the viewpoint of color reproducibility, since light emission having a relatively narrow spectral line width is obtained.
“Substantially containing no wavelength conversion particles” means that wavelength conversion particles inevitably mixed are not excluded, and the content of the wavelength conversion particles is preferably 0.05% by weight or less.

The layer containing the wavelength conversion particles of the translucent member 30 may be a single layer or a plurality of layers. For example, as shown in FIG. 2B, the translucent member 30 includes a first wavelength conversion layer 31 and a first wavelength conversion layer 31.
And a second wavelength conversion layer 32 that covers The second wavelength conversion layer 32 may directly cover the first wavelength conversion layer 31, or may cover the first wavelength conversion layer 31 via another transparent layer. The first wavelength conversion layer 31 is arranged closer to the light extraction surface 201 of the light emitting element 20 than the second wavelength conversion layer 32. The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is preferably shorter than the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32. By doing so, the wavelength conversion particles of the second wavelength conversion layer 32 can be excited by the light from the first wavelength conversion layer 31 excited by the light emitting element.
Thereby, the light from the wavelength conversion particles of the second wavelength conversion layer 32 can be increased.

The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is 500 nm or more and 5
It is preferably 70 nm or less, and the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32 is preferably 610 nm or more and 750 nm or less. By doing so, a light emitting device with high color reproducibility can be obtained. For example, the wavelength conversion particles contained in the first wavelength conversion layer 31 may be a β-sialon-based phosphor, and the wavelength conversion particles contained in the second wavelength conversion layer 32 may be a phosphor of manganese-activated potassium fluorosilicate. To be Second wavelength conversion layer 3
When a phosphor of manganese-activated potassium fluorosilicate is used as the wavelength conversion particles contained in 2, the translucent member 30 particularly includes the first wavelength conversion layer 31 and the second wavelength conversion layer 32. It is preferable. Although the phosphor of manganese-activated potassium fluorosilicate easily causes luminance saturation, since the first wavelength conversion layer 31 is located between the second wavelength conversion layer 32 and the light emitting element 20, light from the light emitting element becomes excessive. Irradiation of the phosphor of manganese activated potassium fluorosilicate can be suppressed. Thereby, the deterioration of the phosphor of manganese activated potassium fluorosilicate can be suppressed.

The translucent member absorbs at least a part of the primary light emitted by the light emitting element, absorbs at least a part of the primary light emitted by the light emitting element, and the first wavelength conversion particles that emit a secondary light by the forbidden transition. , A second wavelength conversion particle that emits secondary light due to the allowed transition. Generally, the first wavelength conversion particles that emit secondary light due to forbidden transition have a longer afterglow time than the second wavelength conversion particles that emit secondary light due to allowed transition. Therefore, the translucent member includes the first wavelength conversion particles and the second wavelength conversion particles.
By including the wavelength conversion particles, the afterglow time can be shortened as compared with the case where the translucent member includes only the first wavelength conversion particles. For example, as the first wavelength conversion particles, a phosphor of manganese activated potassium fluorosilicate (for example, K ₂ SiF ₆ :Mn) can be used, and as the second wavelength conversion particles, a CASN-based phosphor can be used. Since the translucent member contains the CASN-based phosphor and the phosphor of manganese-activated potassium fluorosilicate, the translucent member has more residual than when the translucent member contains only the phosphor of manganese-activated potassium fluorosilicate. The light time can be shortened. In addition, manganese-activated potassium fluorosilicate generally has an emission peak having a narrower half-value width than that of the CASN-based phosphor, and therefore has high color purity and good color reproducibility. Therefore, when the translucent member contains the CASN-based phosphor and the phosphor of manganese-activated potassium fluorosilicate, the color reproducibility is higher than that when the translucent member contains only the CASN-based phosphor. Will be good.

For example, the weight of the phosphor of manganese activated potassium fluorosilicate contained in the translucent member is C
The weight of the phosphor of the ASN-based phosphor is preferably 0.5 times or more and 6 times or less, more preferably 1 time or more and 5 times or less, still more preferably 2 times or more and 4 times or less. By increasing the weight of the phosphor of manganese activated potassium fluorosilicate, the color reproducibility of the light emitting device is improved. The afterglow time can be shortened by increasing the weight of the phosphor of the CASN-based phosphor.

The average particle size of the phosphor of manganese activated potassium fluorosilicate is preferably 5 μm or more and 30 μm or less. The average particle size of the CASN-based phosphor is preferably 5 μm or more and 30 μm or less. When the average particle diameter of the manganese-activated potassium fluorosilicate phosphor and/or the CASN-based phosphor is 30 μm or less, the light from the light emitting element is easily diffused into the wavelength conversion particles. It is possible to suppress unevenness. When the average particle diameter of the phosphor of manganese-activated potassium fluorosilicate and/or the CASN-based phosphor is 5 μm or more, the light from the light emitting element can be easily extracted, so that the light extraction efficiency of the light emitting device is improved.

The CASN-based phosphor and the manganese-activated potassium fluorosilicate phosphor may be contained in the same wavelength conversion layer of the translucent member, and when the translucent member includes a plurality of wavelength conversion layers. , May be contained in different wavelength conversion layers. When the manganese-activated potassium fluorosilicate phosphor and the CASN-based phosphor are contained in different wavelength conversion layers, the light peaks of the manganese-activated potassium fluorosilicate phosphor and the CASN-based phosphor are obtained. It is preferable that the wavelength conversion particles having a short wavelength are located near the light emitting device. By doing so, the wavelength conversion particles having a long light peak wavelength can be excited by the light from the wavelength conversion particles having a short light peak wavelength. For example, the peak wavelength of light of the phosphor of manganese activated potassium fluorosilicate is 631.
When the peak wavelength of light of the CASN-based phosphor is around 650 nm in the vicinity of nm, the phosphor of manganese-activated potassium fluorosilicate is preferably close to the light emitting element.

As the second wavelength conversion particles, other SCASN-based phosphors, SLAN phosphors (SrLiA) are also used.
l ₃ N ₄ :Eu) and the like. For example, the translucent member may contain an SLAN phosphor and a manganese-activated potassium fluorosilicate phosphor. Further, the translucent member may contain first wavelength conversion particles and second wavelength conversion particles that are red phosphors, and β-sialon-based phosphors that are green phosphors. By doing so, the color reproducibility of the light emitting device is improved.

(Preparing the support substrate)
As shown in FIGS. 7A and 7B, a support substrate including a supporting base material 70, a first wiring pattern 81 including a bonding area 810 on an upper surface 701 of the supporting base material 70, and an insulating area 811 surrounding the bonding area 810. Prepare 5000. The supporting base material 70 is an insulating member. The joining region 810 of the support substrate is a part of the first wiring pattern 81, and is a portion joined to the second wiring of the light emitting device by soldering. The insulating region 811 surrounding the bonding region 810 means that when the upper surface 701 of the supporting base material 70 is exposed to the outside as shown in FIG. 7A, the supporting base material 70 is the upper surface 701.
And an insulating region 811. By surrounding the bonding region 810 with the insulating region 811, it becomes easier to control the spread of the melted solder. This increases the self-alignment effect and improves the mountability of the light emitting device. Generally, molten solder is first
Easy to spread on the wiring pattern. Known materials can be used for the supporting base material and the first wiring pattern.

As shown in FIG. 7B, a second wiring pattern 82 may be provided on the lower surface of the supporting base material as shown in the supporting substrate 5000. The first wiring pattern 81 located on the upper surface of the supporting base material and the second wiring pattern 82 located on the lower surface of the supporting base material may be electrically connected by vias. Further, when the power supply portion 85 for supplying electricity is provided on the upper surface of the substrate, the power supply portion 85 and the second wiring pattern 82 may be electrically connected by vias.

As shown in FIGS. 8A and 8B, the support substrate 5001 may include an insulating layer 72 that covers the upper surface 701 of the support base 70 and the first wiring pattern 81. When the insulating layer 72 surrounds the bonding area 810 of the first wiring pattern 81, the insulating layer 72 includes the insulating area 811. Generally, the melted solder is more likely to wet and spread on the first wiring pattern than on the insulating layer. When the bonding region of the first wiring pattern is surrounded by the supporting base material and the insulating layer, the supporting base material and the insulating layer may include the insulating region.

(Place solder on the bonding area and insulating area)
As shown in FIGS. 9A and 9B, the solder 90 on the bonding area 810 and the insulating area 811 is adjusted so that the volume of the solder 90 located on the insulating area 811 is larger than the volume of the solder 90 located on the bonding area 810. To place. By doing so, the volume of the solder 90 located on the bonding region 810 can be reduced. This can prevent molten solder from entering between the lower surface of the base material and the upper surface of the support substrate when the light emitting device and the support substrate to be described later are joined by solder. Therefore, when the light emitting device and the supporting substrate are joined, it is possible to suppress the formation of solder after heating and melting between the lower surface of the base material and the upper surface of the supporting substrate. It is possible to prevent the light emitting device from tilting.

As shown in FIG. 9A, the maximum width D of the solder 90 located on the insulating region 811 in a top view.
2 is preferably wider than the maximum width D1 of the solder 90 located on the bonding area 810. By doing so, the volume of the solder 90 located on the insulating region 811 can be easily made larger than the volume of the solder 90 located on the bonding region 810. In this specification, the maximum width of the solder 90 is the maximum width of the solder in the X direction.

As shown in FIG. 9B, the upper surface of the solder 90 located on the insulating area 811 and the upper surface of the solder 90 located on the bonding area 810 may be flush with each other in a sectional view. For example, by arranging a metal mask having an opening on a support substrate and forming solder on the opening of the metal mask by a screen printing method, it is possible to position the upper surface of the solder on the insulating area and the solder on the bonding area. The upper surface of the solder can be flush with the upper surface. In the present specification, “flat” means that a variation of about ±5 μm is allowed.

The maximum thickness of the solder located on the insulating region in the cross-sectional view may be the same as the maximum thickness of the solder located on the joining region, and the maximum thickness of the solder located on the insulating region in the cross-sectional view is located on the joining region. 9B and 9C, the maximum thickness D4 of the solder 90 located on the insulating area 811 in the cross-sectional view is the maximum of the solder 90 located on the bonding area 810, as shown in FIGS. 9B and 9C. May be thicker than the thickness D3. 81 on the insulating region in cross section
Since the maximum thickness D4 of the solder 90 located on 1 is thicker than the maximum thickness D3 of the solder 90 located on the bonding area 810, the volume of the solder 90 located on the insulating area 811 is increased.
It is easy to make the volume larger than the volume of the solder 90 located on 10. For example, in top view,
Even if the area of the solder located on the insulating area is smaller than the area of the solder located on the bonding area, the maximum thickness of the solder located on the insulating area in cross-sectional view is the maximum of the solder located on the bonding area. By making the solder thicker than the thickness, the volume of the solder located on the insulating region is increased.
It can be larger than the volume of the solder 90 located above. In this specification, the maximum thickness of the solder is the maximum value of the thickness of the solder in the Y direction.

As shown in FIG. 9A, the adhesive resin 92 before curing may be formed on the supporting substrate. The adhesive resin 92 can be used as a member for adhering the light emitting device and the supporting substrate. By providing the adhesive resin, the bonding strength between the light emitting device and the supporting substrate can be improved. The thickness of the adhesive resin in the Y direction is thicker than the distance between the lower surface of the base material and the upper surface of the supporting base material when a light emitting device to be described later is mounted on the support substrate so as to be in contact with the light emitting element. A known resin such as a thermosetting resin and/or a thermoplastic resin can be used as the adhesive resin. Thermosetting resins such as epoxy resins and silicone resins have excellent heat resistance and light resistance and are therefore preferably used as the adhesive resin. The adhesive resin may be separated from the bonding area or may be in contact with part of the bonding area. Since solder is formed on the bonding area, it is preferable that the adhesive resin be separated from the bonding area in a top view. When the adhesive resin is separated from the bonding area, when the light emitting device and the support substrate are bonded by solder, the melted solder easily spreads over the bonding area. As shown in FIG. 9A, X
It is preferable that the adhesive resin 92 is located between the pair of joint regions 810 joined to the second wiring of one light emitting device in the direction. A second wiring of the light emitting device and a bonding region of the supporting substrate;
Are bonded by solder, the adhesive resin is located between the pair of bonding regions 810 to be bonded to the second wiring of the light emitting device in the X direction, thereby suppressing the stress related to the base material of the light emitting device. You can

Examples of the method for forming the adhesive resin before curing on the supporting substrate include application by dispensing or pin transfer, spraying by inkjet or spray, and the like. When the adhesive resin is formed by dispensing or the like, one point of the adhesive resin 92 may be applied as shown in FIG. 9A, or a plurality of points of the adhesive resin 92 may be applied as shown in FIGS. 9D and 9E. May be. Further, as shown in FIG. 9F, adhesive resin applied at a plurality of points may be connected. Further, when the adhesive resin 92 is applied at a plurality of points, it may be formed so that the plurality of adhesive resins are arranged in the Z direction, and as shown in FIG. 9D, the plurality of adhesive resins are arranged in the X direction. You may form.

(Place the light emitting device on the support substrate)
As shown in FIGS. 10A and 10B, in a top view, the solder 90 and the second wiring 13 located near the lower surface 114 of the base material are separated from each other, and the light emitting device 1000 is mounted on the support substrate 5000. In this specification, the second wiring located near the lower surface of the base material means a portion of the second wiring 13 that is flush with the lower surface 114 of the base material. By mounting the light emitting device on the supporting substrate with the solder 90 and the second wiring 13 located near the lower surface 114 of the base material separated from each other, the light emitting device and the supporting substrate are melted when they are joined by solder. It is possible to prevent the solder from entering between the lower surface of the base material and the upper surface of the support substrate. Thereby, the light emitting device described later, the support substrate,
Since it is possible to suppress the formation of solder after heating and melting between the lower surface of the base material and the upper surface of the support substrate when the are joined, it is possible to prevent the light emitting device from tilting with respect to the support substrate. it can.
Further, when the light emitting device 1000 is mounted on the supporting substrate 5000 with the solder 90 and the second wiring 13 located near the lower surface 114 of the substrate being separated from each other, the lower surface 114 of the substrate and the upper surface of the supporting substrate are separated from each other. There is no solder before heating and melting.

As shown in FIG. 10B, the solder 90 and the second wiring 13 may be separated from each other in a sectional view, and as shown in FIG. 10C, the solder 90 and the second wiring 13 may be apart from the vicinity of the bottom surface 114 of the base material. At least a part of the second wiring 13 located may be in contact with each other. The second wiring 13 located outside the lower surface 114 of the base material is a portion of the second wiring 13 that is not flush with the lower surface 114 of the base material. That is, the solder 90 may be in contact with at least a part of the second wiring 13 that is not flush with the lower surface 114 of the base material.

As shown in FIG. 9A, when the uncured adhesive resin 92 is formed on the support substrate, the light emitting device is placed on the support substrate so that the uncured adhesive resin 92 and a part of the light emitting device are in contact with each other. To do. By doing so, the light emitting device and the supporting substrate can be fixed with the adhesive resin after curing, so that the bonding strength between the light emitting device and the supporting substrate is improved. The position of the adhesive resin is not particularly limited. For example, in FIG.
As shown in A, the adhesive resin 92 may be located between the plurality of depressions 16 of the base material. Board 1
Since the second wiring 13 arranged in each of the plurality of dents 0 and the joining region of the wiring pattern of the support substrate are joined by solder, the adhesive resin 92 is located between the plurality of dents 16 of the base material. As a result, the stress applied to the base material of the light emitting device can be suppressed. Further, as shown in FIG. 10A, it is preferable that the shortest distance between the front surface 111 of the base material and the outer edge of the adhesive resin 92 is shorter than the shortest distance between the front surface 111 of the base material and the outer edge of the solder 90 in a top view. By doing so, since the front surface 111 side of the base material and the supporting substrate can be bonded by the adhesive resin 92,
The bonding strength between the light emitting device and the support substrate is improved. The light emitting device to which the adhesive resin before curing is attached may be mounted on the supporting substrate.

The size of the adhesive resin in the top view is not particularly limited, but the maximum width D5 of the adhesive resin in the Z direction in the top view is 0.2 to 0 times the maximum width D6 of the light emitting device in the Z direction.
． It is preferably 7 times. Since the maximum width D5 of the adhesive resin in the Z direction in the top view is 0.2 times or more the maximum width D6 of the light emitting device in the Z direction, the volume of the adhesive resin increases, so that the light emitting device and the support substrate are bonded together. Strength is improved. When the maximum width D5 of the adhesive resin in the Z direction in the top view is 0.7 times or less than the maximum width D6 of the light emitting device in the Z direction, the adhesive resin can be less likely to be formed on the bonding region.

It is preferable that the maximum width of the recess is narrower than the maximum width of the bonding region in a top view. By doing so, it becomes easy to increase the area of the second wiring located on the bonding region in a top view. The maximum width of the depression is the maximum width of the depression in the X direction, and the maximum width of the bonding area is the maximum width of the bonding area in the X direction.

(Joining the second wiring of the light emitting device and the joining portion of the supporting substrate)
As shown in FIG. 11, the solder 90 is heated and melted, and the second wiring 13 of the light emitting device and the support substrate 50 are formed.
No. 00 bonding region 810 is bonded. The melted solder is likely to spread in the bonding area 8
Gather on top 10. Thereby, the volume of the solder after heating and melting located on the joining region can be made larger than the volume of the solder after heating and melting located on the insulating region. Since the volume of the solder after heating and melting located on the bonding region is large, the second wiring 13 and the bonding region 810 are easily bonded by the solder. This improves the bonding strength between the light emitting device and the support substrate. Since the solder after heating and melting is less likely to be formed between the lower surface of the base material and the upper surface of the support substrate, it is possible to prevent the light emitting device from being inclined and joined to the support substrate. As shown in FIG. 11, it is preferable that all of the solder after heating and melting be located on the joint region.

When the adhesive resin before being cured is formed on the support substrate, the adhesive resin is cured when the solder is heated and melted to join the second wiring of the light emitting device and the joining region 810 of the support substrate 5000. You may. By doing so, the time for manufacturing the light source device can be shortened.

As described above, the light source device 1000A can be manufactured by performing the above-described steps.

<Embodiment 2>
A method of manufacturing the light source device according to the second embodiment will be described. The method of manufacturing the light source device of the second embodiment is the same as the method of manufacturing the light source device of the first embodiment except that the steps of preparing the light emitting device are different.

As shown in FIG. 13B, a light emitting device 2000 including the substrate 10 and a plurality of light emitting elements is prepared. Like the light emitting device of the first embodiment, the substrate 10 includes a base material 11, a first wiring 12, and a second wiring.
The wiring 13 is provided. The light emitting device of Embodiment 1 has one light emitting element, but Embodiment 2
The light emitting device 2000 includes a plurality of light emitting elements, a first light emitting element 20A and a second light emitting element 20B. The first light emitting element and/or the second light emitting element may be referred to as a light emitting element. The emission peak wavelengths of the first light emitting element and the second light emitting element may be the same or different. For example, when the emission peak wavelengths of the first light emitting element and the second light emitting element are the same, the peak emission wavelengths of the first light emitting element and the second light emitting element are in the range of 430 nm or more and less than 490 nm (wavelength range of blue region). It may be. When the emission peak wavelengths of the first light emitting element and the second light emitting element are different, the first light emitting element whose emission peak wavelength is in the range of 430 nm or more and less than 490 nm (wavelength range of blue region) and the emission peak wavelength The second light emitting element may have a wavelength in the range of 490 nm or more and 570 nm or less (the wavelength range of the green region). By doing so, the color reproducibility of the light emitting device can be improved. In addition, if the emission peak wavelength is the same, a fluctuation of about ±10 nm is allowed.

As shown in FIG. 13B, a translucent member 30 that covers the first light emitting element 20A and the second light emitting element 20B may be provided. Since the light emitting device 2000 includes the translucent member 30 that covers the first light extraction surface 201A of the first light emitting element 20A and the second light extraction surface 201B of the second light emitting element 20B, the first light emitting element and the second light emitting element 20 are provided. It is possible to suppress uneven brightness between the light emitting elements. If the emission peak wavelengths of the first light emitting element and the second light emitting element are different,
By guiding the light from the light emitting element and the light from the second light emitting element to the light guide member, the color mixing property of the light emitting device can be improved.

As shown in FIG. 13B, the light guide member 50 may continuously cover the first element side surface 202A of the first light emitting element 20A and the second element side surface 202B of the second light emitting element 20B. By doing so, it is possible to suppress uneven brightness between the first light emitting element and the second light emitting element.

As shown in FIGS. 12B and 13B, the light emitting device 2000 may include an insulating film 18 that covers a part of the third wiring 14. By providing the insulating film 18, it is possible to secure insulation on the back surface and prevent short circuits. In addition, since the insulating film 18 is provided,
It is possible to prevent the wiring from coming off.

A first light-transmissive member 3 that covers the first light emitting element 20A as in the light emitting device 2001 shown in FIG.
0A and the 2nd translucent member 30B which coat|covers the 2nd light emitting element 20B may be provided.
The wavelength conversion particles contained in the first translucent member and the second translucent member may be the same or different. A first light emitting element having an emission peak wavelength in the range of 430 nm to less than 490 nm (blue wavelength range) and a second light emitting element having an emission peak wavelength of 490 nm to 570 nm inclusive (green wavelength range) And, the first translucent member 3
0A may contain a red fluorescent substance, and the 2nd translucent member 30B does not need to contain a wavelength conversion particle substantially. By doing so, the color reproducibility of the light emitting device can be improved.
Further, since the light from the second light emitting element is not blocked by the wavelength conversion particles, the light extraction efficiency of the light emitting device is improved. Examples of the red phosphor contained in the first translucent member include manganese activated fluoride phosphor.

Hereinafter, each component of the light emitting device according to the embodiment of the present invention will be described.

(Substrate 10)
The substrate 10 is a member on which the light emitting element is placed. The substrate 10 includes at least the base material 11,
The first wiring 12 and the second wiring 13 are provided.

(Base material 11)
The base material 11 can be configured using an insulating member such as resin or fiber reinforced resin, ceramics, or glass. Examples of the resin or fiber reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, and mixtures thereof. Among these base materials, it is preferable to use a base material having physical properties close to the linear expansion coefficient of the light emitting element. The lower limit of the thickness of the base material can be appropriately selected, but from the viewpoint of the strength of the base material, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. Further, the upper limit of the thickness of the base material is preferably 0.5 mm or less from the viewpoint of the thickness (depth) of the light emitting device, and 0
． It is more preferably 4 mm or less.

(First wiring 12)
The first wiring is arranged in front of the base material and electrically connected to the light emitting element. The first wiring is copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium,
It can be formed of rhodium or an alloy thereof. The metal or alloy may be a single layer or a multilayer. In particular, copper or copper alloy is preferable from the viewpoint of heat dissipation. Further, the surface layer of the first wiring, from the viewpoint of wettability and/or light reflectivity of the fusible conductive adhesive member,
A layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof may be provided.

(Second wiring 13)
The second wiring is a member that is electrically connected to the first wiring and covers the inner wall of the recess of the base material.
The same conductive member as the first wiring can be used for the second wiring.

(Light emitting element 20 (first light emitting element, second light emitting element))
The light emitting element is a semiconductor element that emits light by applying a voltage, and a known semiconductor element made of a nitride semiconductor or the like can be applied. Examples of the light emitting element include an LED chip. The light emitting device includes at least a semiconductor layer and often further includes a device substrate. The light emitting element has an element electrode. The device electrode can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or an alloy thereof. A nitride semiconductor is preferably used as the semiconductor material. Nitride semiconductor is represented by mainly general formula _{In x Al y Ga 1-x} -y N (0 ≦ x, 0 ≦ y, x + y ≦ 1). In addition, InAlGaAs based semiconductors, InAlGaP based semiconductors, zinc sulfide, zinc selenide, silicon carbide and the like can be used. The element substrate of the light emitting element is mainly a crystal growth substrate capable of growing semiconductor crystals that form a semiconductor laminated body, but may be a bonding substrate for bonding to a semiconductor element structure separated from the crystal growth substrate. .. Since the element substrate has a light-transmitting property, flip-chip mounting can be easily adopted and light extraction efficiency can be easily improved. Examples of the base material of the element substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, diamond and the like. Of these, sapphire is preferred. The thickness of the element substrate can be appropriately selected, and is, for example, 0.02 mm or more and 1 mm or less, and the strength and//
Alternatively, from the viewpoint of the thickness of the light emitting device, it is preferably 0.05 mm or more and 0.3 mm or less.

(Reflecting member 40)
The reflecting member is a member that covers the element side surface 202 of the light emitting element 20 and the front surface 111 of the base material to form a light emitting device having a good “partition property”. The light reflectance of the reflecting member at the light emission peak wavelength of the light emitting element is preferably 70% or more, more preferably 80% or more,
It is even more preferably 90% or more. For example, as the reflecting member, a member in which a resin contains a white pigment can be used.

(Translucent member 30)
The translucent member is a translucent member that covers the light extraction surface of the light emitting element and protects the light emitting element. As the material of the translucent member, for example, resin can be used. Examples of the resin that can be used for the translucent member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. It is preferable to use an epoxy resin as the material of the translucent member because the strength of the light emitting device can be improved as compared with the case of using a silicone resin. Further, the silicone resin and the modified silicone resin are
It is preferable because it has excellent heat resistance and light resistance. The translucent member may contain wavelength conversion particles and/or diffusion particles.

(Wavelength conversion particles)
The wavelength conversion particles absorb at least a part of the primary light emitted by the light emitting element and emit secondary light having a wavelength different from that of the primary light. The wavelength conversion particle is one of the following specific examples,
Alternatively, two or more kinds can be used in combination. When the translucent member includes a plurality of wavelength conversion layers, the wavelength conversion particles contained in each wavelength conversion layer may be the same or different.

Examples of wavelength conversion particles that emit green light include yttrium-aluminum-garnet-based phosphors (for example, Y ₃ (Al,Ga) ₅ O ₁₂ :Ce) and lutetium-aluminum-garnet-based phosphors (for example, Lu ₃ (Al,Ga)). ₅ O ₁₂ :Ce), a terbium aluminum garnet-based phosphor (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ :Ce)-based phosphor, and a silicate-based phosphor (for example (Ba, Sr) ₂ SiO ₄ :Eu). ), chlorosilicate-based phosphor (
For example, Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu), β-sialon-based phosphor (eg, Si _{6 ).
-Z Al z O z N 8-} z: Eu (0 <z <4.2)), SGS phosphor (e.g. SrGa
₂ S ₄ :Eu), an alkaline earth aluminate-based phosphor (eg (Ba,Sr,Ca)Mg _x
Al ₁₀ O _16+x :Eu,Mn (where 0≦X≦1)) and the like. The wavelength conversion particles for yellow emission include α-sialon-based phosphors (for example, M _z (Si,Al) ₁₂ (O,N)).
₁₆ (where 0<z≦2, M is Li, Mg, Ca, Y, and a lanthanide element excluding La and Ce) and the like. In addition to the above, wavelength conversion particles that emit green light include wavelength conversion particles that emit yellow light. Further, for example, in the yttrium-aluminum-garnet-based phosphor, the emission peak wavelength can be shifted to the long wavelength side by substituting part of Y with Gd, and yellow emission is possible. Further, among these, there are wavelength conversion particles capable of emitting orange light. The wavelength conversion particles that emit red light include nitrogen-containing calcium aluminosilicate (CAS).
N or SCASN) type phosphors (for example, (Sr,Ca)AlSiN ₃ :Eu), SLAN phosphors (SrLiAl ₃ N ₄ :Eu), and the like. In addition, in the manganese-activated fluoride phosphor (a phosphor represented by general formula _{(I) A 2 [M 1} -a Mn a F 6] ( where the general formula (I), A is K, Li, Na, Rb, Cs, and at least one selected from the group consisting of NH ₄ , M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, a satisfies 0<a<0.2)). As a typical example of the manganese-activated fluoride-based phosphor, a manganese-activated potassium fluorosilicate phosphor (
For example, there is K ₂ SiF ₆ :Mn).

(Diffused particles)
Examples of the diffusing particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide and the like. As the diffusing particles, one of these may be used alone, or two or more of these may be used in combination. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. Further, by using nanoparticles as the diffusing particles, it is possible to increase the scattering of light emitted from the light emitting element and reduce the amount of wavelength conversion particles used. In addition, the nanoparticles have a particle size of 1 nm or more and 1
The particle size is 00 nm or less. Further, the “particle size” in the present specification is defined by, for example, D ₅₀ .

(Light guide member 50)
The light guide member is a member that fixes the light emitting element and the translucent member and guides light from the light emitting element to the translucent member. Examples of the base material of the light guide member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. It is preferable to use epoxy resin as the material of the light guide member because the strength of the light emitting device can be improved as compared with the case of using silicone resin. Further, the silicone resin and the modified silicone resin are preferable because they are excellent in heat resistance and light resistance. The light guide member may contain the same wavelength conversion particles and/or diffusing particles as those of the above-mentioned translucent member.

(Conductive adhesive member 60)
The conductive adhesive member is a member that electrically connects the element electrode of the light emitting element and the first wiring. As the conductive adhesive member, bumps such as gold, silver and copper, silver, gold, copper, platinum, aluminum, metal paste containing metal powder such as palladium and resin binder, tin-bismuth-based,
Any one of tin-copper based solder, tin-silver based solder, gold-tin based solder, and brazing material such as low melting point metal 1
One can be used.

A light emitting device according to an embodiment of the present invention includes a backlight device for a liquid crystal display, various lighting devices, a large display, various display devices such as advertisements and destination guides, a projector device, a digital video camera, a facsimile, and a copying machine. It can be used for an image reading device in a scanner or the like.

1000A Light source device 1000, 1001, 2000, 2001 Light emitting device 5000, 5001 Support substrate 10 Substrate 11 Base material 12 First wiring 13 Second wiring 14 Third wiring 15 Via
151 Fourth wiring
152 Filling Member 16 Dimple 18 Insulating Film 20 Light Emitting Element 30 Translucent Member 40 Reflecting Member 50 Light Guide Member 60 Conductive Adhesive Member

Claims (6)

A front surface extending in the longitudinal direction and a lateral direction orthogonal to the longitudinal direction, a back surface located on the opposite side of the front surface, an upper surface adjacent to the front surface, orthogonal to the front surface, and located on the opposite side of the upper surface. A base having a lower surface to be formed, a plurality of recesses opening to the back surface and the lower surface, a first wiring arranged on the front surface, and each of the plurality of recesses electrically connected to the first wiring Preparing a light emitting device comprising: a substrate having a second wiring disposed on the first wiring; and at least one light emitting element electrically connected to the first wiring and mounted on the first wiring. When,
A step of preparing a supporting substrate including a supporting base material, a first wiring pattern including a bonding area on an upper surface of the supporting base material, and an insulating area surrounding the bonding area;
In a top view, a step of arranging the solder on the bonding area and the insulating area so that the maximum width of the solder positioned on the insulating area is larger than the maximum width of the solder positioned on the bonding area,
Placing the light emitting device on the support substrate with the solder and the second wiring located near the lower surface separated from each other in a top view;
Heating and melting the solder to bond the second wiring of the light emitting device and the bonding region of the support substrate;
A method for manufacturing a light source device including: The method for manufacturing a light source device according to claim 1, further comprising an adhesive resin that bonds the substrate and the support substrate. The method for manufacturing a light source device according to claim 2, wherein in the step of joining the second wiring of the light emitting device and the joining region of the support substrate, the adhesive resin is cured. The method for manufacturing a light source device according to claim 2, wherein the adhesive resin is located between the plurality of depressions. The method for manufacturing a light source device according to claim 1, wherein a maximum width of the recess is narrower than a maximum width of the bonding region in a top view. The method for manufacturing a light source device according to claim 1, wherein a depth on the lower surface side of each of the plurality of depressions is larger than a depth on the upper surface side.

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