KR20090087426A - 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체 - Google Patents
플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체 Download PDFInfo
- Publication number
- KR20090087426A KR20090087426A KR1020090011592A KR20090011592A KR20090087426A KR 20090087426 A KR20090087426 A KR 20090087426A KR 1020090011592 A KR1020090011592 A KR 1020090011592A KR 20090011592 A KR20090011592 A KR 20090011592A KR 20090087426 A KR20090087426 A KR 20090087426A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma etching
- plasma
- gas
- substrate
- pattern
- Prior art date
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 31
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 14
- 229920005591 polysilicon Polymers 0.000 abstract description 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- 239000003507 refrigerant Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 abstract 6
- 239000002826 coolant Substances 0.000 abstract 3
- 239000006117 anti-reflective coating Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 77
- 230000000052 comparative effect Effects 0.000 description 14
- 230000003667 anti-reflective effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- -1 polysilicon Chemical compound 0.000 description 3
- 241000209140 Triticum Species 0.000 description 2
- 235000021307 Triticum Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133628—Illuminating devices with cooling means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (7)
- 피처리 기판상에 형성된 실리콘층을, 소정 형상으로 패터닝된 마스크층을 거쳐서 처리 가스의 플라즈마에 의해 에칭하는 플라즈마 에칭 방법으로서,상기 처리 가스는 적어도 CF3I 가스를 포함하고,상기 플라즈마중의 이온을 가속하는 셀프 바이어스 전압 Vdc가 200V 이하로 되도록, 상기 피처리 기판을 탑재하는 하부 전극에 고주파 전력을 인가하는 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 1 항에 있어서,상기 하부 전극에 주파수가 40 ㎒ 이상의 고주파 전력을 인가하는 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 마스크층은 라인과 스페이스로 형성된 에칭 패턴을 갖고, 라인의 폭과 스페이스의 폭의 비(라인의 폭/스페이스의 폭)가 1/1인 밀 패턴(dense pattern)과, 1/10 이하인 소 패턴(sparse pattern)이 혼재하는 것을 특징으로 하는 플라즈마 에 칭 방법.
- 피처리 기판상에 형성된 실리콘 이외의 재료로 이루어지는 제 1 층을 제 1 처리 가스의 플라즈마에 의해 에칭한 처리 챔버내에서,상기 피처리 기판상에 형성된 실리콘층을, 제 2 처리 가스의 플라즈마에 의해 에칭하는 플라즈마 에칭 방법으로서,상기 제 2 처리 가스는 적어도 CF3I 가스를 포함하고,상기 플라즈마중의 이온을 가속하는 셀프 바이어스 전압 Vdc가 200V 이하로 되도록, 상기 피처리 기판을 탑재하는 하부 전극에 고주파 전력을 인가하는 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 4 항에 있어서,상기 하부 전극에 주파수가 40 ㎒ 이상의 고주파 전력을 인가하는 것을 특징으로 하는 플라즈마 에칭 방법.
- 피처리 기판을 수용하는 처리 챔버와,상기 처리 챔버내에 처리 가스를 공급하는 처리 가스 공급 수단과,상기 처리 가스 공급 수단으로부터 공급된 상기 처리 가스를 플라즈마화해서 상기 피처리 기판을 처리하는 플라즈마 생성 수단과,상기 처리 챔버내에서 제 1 항 또는 제 4 항에 기재된 플라즈마 에칭 방법이 실행되도록 제어하는 제어부를 구비한 것을 특징으로 하는 플라즈마 에칭 장치.
- 컴퓨터상에서 동작하는 제어 프로그램이 기억된 컴퓨터 기억 매체로서,상기 제어 프로그램은 실행시에 제 1 항 또는 제 2 항에 기재된 플라즈마 에칭 방법이 실행되도록 플라즈마 에칭 장치를 제어하는 것을 특징으로 하는 컴퓨터 기억 매체.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2008-030079 | 2008-02-12 | ||
JP2008030079A JP2009193989A (ja) | 2008-02-12 | 2008-02-12 | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090087426A true KR20090087426A (ko) | 2009-08-17 |
KR101068014B1 KR101068014B1 (ko) | 2011-09-26 |
Family
ID=40939251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090011592A KR101068014B1 (ko) | 2008-02-12 | 2009-02-12 | 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090203219A1 (ko) |
JP (1) | JP2009193989A (ko) |
KR (1) | KR101068014B1 (ko) |
CN (1) | CN101609799B (ko) |
TW (1) | TW200952065A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120037747A (ko) * | 2010-10-12 | 2012-04-20 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
KR20140117282A (ko) * | 2013-03-26 | 2014-10-07 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8278811B2 (en) * | 2010-12-30 | 2012-10-02 | General Electric Company | Device and method for circuit protection |
JP2013110139A (ja) | 2011-11-17 | 2013-06-06 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP6200849B2 (ja) * | 2014-04-25 | 2017-09-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびドライエッチング方法 |
KR102549308B1 (ko) * | 2016-03-29 | 2023-06-30 | 도쿄엘렉트론가부시키가이샤 | 에칭 장치 |
JP6854600B2 (ja) * | 2016-07-15 | 2021-04-07 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、および基板載置台 |
JP6328703B2 (ja) * | 2016-08-15 | 2018-05-23 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02150027A (ja) * | 1988-12-01 | 1990-06-08 | Toshiba Corp | アルミニウムおよびアルミニウム合金のドライエッチング方法 |
US5223457A (en) * | 1989-10-03 | 1993-06-29 | Applied Materials, Inc. | High-frequency semiconductor wafer processing method using a negative self-bias |
JP3729869B2 (ja) * | 1990-09-28 | 2005-12-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US5346586A (en) * | 1992-12-23 | 1994-09-13 | Micron Semiconductor, Inc. | Method for selectively etching polysilicon to gate oxide using an insitu ozone photoresist strip |
KR100346448B1 (ko) * | 1994-12-29 | 2002-11-23 | 주식회사 하이닉스반도체 | 반도체소자용노광마스크 |
US5945350A (en) * | 1996-09-13 | 1999-08-31 | Micron Technology, Inc. | Methods for use in formation of titanium nitride interconnects and interconnects formed using same |
JP3336975B2 (ja) * | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
US6812491B2 (en) * | 2002-03-22 | 2004-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory cell and semiconductor memory device |
US7625460B2 (en) * | 2003-08-01 | 2009-12-01 | Micron Technology, Inc. | Multifrequency plasma reactor |
EP2479783B1 (en) * | 2004-06-21 | 2018-12-12 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7740737B2 (en) * | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7951262B2 (en) * | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP2006032721A (ja) * | 2004-07-16 | 2006-02-02 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
-
2008
- 2008-02-12 JP JP2008030079A patent/JP2009193989A/ja not_active Withdrawn
-
2009
- 2009-02-11 TW TW098104342A patent/TW200952065A/zh unknown
- 2009-02-12 CN CN2009100089298A patent/CN101609799B/zh not_active Expired - Fee Related
- 2009-02-12 US US12/369,961 patent/US20090203219A1/en not_active Abandoned
- 2009-02-12 KR KR1020090011592A patent/KR101068014B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120037747A (ko) * | 2010-10-12 | 2012-04-20 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
KR20140117282A (ko) * | 2013-03-26 | 2014-10-07 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
CN101609799B (zh) | 2011-08-24 |
US20090203219A1 (en) | 2009-08-13 |
CN101609799A (zh) | 2009-12-23 |
KR101068014B1 (ko) | 2011-09-26 |
JP2009193989A (ja) | 2009-08-27 |
TW200952065A (en) | 2009-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101088254B1 (ko) | 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체 | |
KR101061621B1 (ko) | 플라즈마 에칭 방법 및 컴퓨터 기억 매체 | |
US9177823B2 (en) | Plasma etching method and plasma etching apparatus | |
KR100924853B1 (ko) | 플라즈마 에칭 방법, 플라즈마 에칭 장치, 제어 프로그램및 컴퓨터 기억매체 | |
JP5839689B2 (ja) | プラズマエッチング方法及び半導体装置の製造方法並びにコンピュータ記憶媒体 | |
KR101068014B1 (ko) | 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체 | |
US8679358B2 (en) | Plasma etching method and computer-readable storage medium | |
US20100224587A1 (en) | Plasma etching method, plasma etching apparatus and computer-readable storage medium | |
KR101067222B1 (ko) | 플라즈마 에칭 방법, 플라즈마 에칭 장치, 제어 프로그램 및 컴퓨터 기억 매체 | |
US8609549B2 (en) | Plasma etching method, plasma etching apparatus, and computer-readable storage medium | |
JP2015041624A (ja) | シリコン酸化膜をエッチングする方法 | |
JP2014096500A (ja) | プラズマエッチング方法及びプラズマエッチング装置 | |
JP2020088174A (ja) | エッチング方法及び基板処理装置 | |
US20090206053A1 (en) | Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium | |
JP5804978B2 (ja) | プラズマエッチング方法及びコンピュータ記録媒体 | |
JP5047644B2 (ja) | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140901 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150819 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160818 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170822 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180903 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190903 Year of fee payment: 9 |