KR20090062398A - 현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막 - Google Patents
현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막 Download PDFInfo
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Abstract
Description
Claims (10)
- 청구항 1에 있어서,상기 다이올 또는 폴리올 화합물은 하기 화학식 2로 표시되는 화합물인 것을 특징으로 하는 조성물:[화학식 2]상기 화학식 2에서,R1은 하기 화학식 3의 작용기로 치환되거나 비치환된 C1~C10의 알킬렌기, C1~C10의 알콕시알킬렌기, C6~C20의 방향족기, 에스테르기, 카보닐기, 아민기 또는 아마이드기이고,R2, R3, R4, R5는 각각 독립적으로 하기 화학식 3의 작용기로 치환되거나 비치환된 C1~C10의 알킬기, C1~C10의 알콕시알킬기, C6~C20의 방향족기, 에스테르기, 카보닐기, 아민기 또는 아마이드기이다.[화학식 3]상기 화학식 3에서,R7, R8은 각각 독립적으로 C1~C10의 알킬기, C1~C10의 알콕시알킬기, C6~C20 의 방향족기, 에스테르기, 카보닐기, 아민기 또는 아마이드기이다.
- 청구항 2에 있어서,상기 화학식 2로 표시되는 화합물은 2,2,4,4-디메틸디하이드록시 부탄, 2,2,5,5-디메틸다이하이드록시펜탄, 2,2,6,6-디메틸다이하이드록시 헥탄, 2,2,4,4-디에틸다이하이드록시부탄으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 조성물.
- 청구항 1에 있어서,상기 화학식 1에서 X가 할로젠 원자인 것을 특징으로 하는 조성물.
- 청구항 1에 있어서,상기 a)의 공중합체는 중량평균분자량이 2,000~100,000인 것을 특징으로 하는 조성물.
- 청구항 1에 있어서,상기 조성물은 상기 a)공중합체 0.1 내지 50 중량%, 상기 b) 다이올 또는 폴리올 화합물 0.1 내지 25 중량%, 상기 c) 산 발생제 0.1 내지 10 중량%, 및 상기 d) 용매 30 내지 99.5 중량%를 포함하는 것을 특징으로 하는 조성물.
- 청구항 1 내지 8 중 어느 한 항에 따른 조성물을 이용하여 형성된 유기 반사방지막.
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KR1020070129623A KR100920886B1 (ko) | 2007-12-13 | 2007-12-13 | 현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막 |
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KR101993472B1 (ko) * | 2012-09-12 | 2019-09-30 | 주식회사 동진쎄미켐 | 레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법 |
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JP3707632B2 (ja) | 1996-10-18 | 2005-10-19 | 富士写真フイルム株式会社 | 反射防止膜用組成物 |
KR100395904B1 (ko) * | 1999-04-23 | 2003-08-27 | 주식회사 하이닉스반도체 | 유기 반사방지 중합체 및 그의 제조방법 |
KR20050017789A (ko) * | 2003-08-09 | 2005-02-23 | 주식회사 하이닉스반도체 | 248 ㎚ KrF 광원을 사용한 초미세 패턴 형성 공정에서사용되는 포토레지스트 중합체 및 반사방지막 중합체와이를 포함하여 구성되는 포토레지스트 조성물 및 반사방지막 조성물 |
WO2005111724A1 (ja) * | 2004-05-14 | 2005-11-24 | Nissan Chemical Industries, Ltd. | ビニルエーテル化合物を含む反射防止膜形成組成物 |
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