KR20090018096A - 압전 물질을 폴리싱하는 방법 - Google Patents
압전 물질을 폴리싱하는 방법 Download PDFInfo
- Publication number
- KR20090018096A KR20090018096A KR1020087029801A KR20087029801A KR20090018096A KR 20090018096 A KR20090018096 A KR 20090018096A KR 1020087029801 A KR1020087029801 A KR 1020087029801A KR 20087029801 A KR20087029801 A KR 20087029801A KR 20090018096 A KR20090018096 A KR 20090018096A
- Authority
- KR
- South Korea
- Prior art keywords
- piezoelectric material
- forming
- assembly
- oxide layer
- fluid discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000463 material Substances 0.000 title claims abstract description 168
- 238000005498 polishing Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000012530 fluid Substances 0.000 claims description 23
- 238000000227 grinding Methods 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000003213 activating effect Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- 238000000678 plasma activation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000012528 membrane Substances 0.000 description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 239000000499 gel Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000001513 hot isostatic pressing Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229920005669 high impact polystyrene Polymers 0.000 description 1
- 239000004797 high-impact polystyrene Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Micromachines (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74655606P | 2006-05-05 | 2006-05-05 | |
| US60/746,556 | 2006-05-05 | ||
| US11/744,105 US20070257580A1 (en) | 2006-05-05 | 2007-05-03 | Polishing Piezoelectric Material |
| US11/744,105 | 2007-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090018096A true KR20090018096A (ko) | 2009-02-19 |
Family
ID=38660583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087029801A Ceased KR20090018096A (ko) | 2006-05-05 | 2007-05-04 | 압전 물질을 폴리싱하는 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20070257580A1 (enExample) |
| EP (1) | EP2021298A4 (enExample) |
| JP (1) | JP2009536465A (enExample) |
| KR (1) | KR20090018096A (enExample) |
| WO (1) | WO2007131198A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005072113A (ja) * | 2003-08-21 | 2005-03-17 | Ngk Insulators Ltd | 圧電/電歪デバイス |
| US8053951B2 (en) * | 2008-11-04 | 2011-11-08 | Fujifilm Corporation | Thin film piezoelectric actuators |
| KR101024013B1 (ko) * | 2008-12-03 | 2011-03-29 | 삼성전기주식회사 | 잉크젯 헤드 제조방법 |
| JP2010238856A (ja) * | 2009-03-31 | 2010-10-21 | Tdk Corp | 圧電体素子及びジャイロセンサ |
| WO2010148398A2 (en) * | 2009-06-19 | 2010-12-23 | The Regents Of The University Of Michigan | A thin-film device and method of fabricating the same |
| US9266326B2 (en) | 2012-07-25 | 2016-02-23 | Hewlett-Packard Development Company, L.P. | Piezoelectric actuator and method of making a piezoelectric actuator |
| DE112014001537B4 (de) | 2013-03-21 | 2018-06-28 | Ngk Insulators, Ltd. | Verbundsubstrate für Akustikwellenelemente und Akustikwellenelemente |
| JP6166170B2 (ja) * | 2013-12-16 | 2017-07-19 | 日本碍子株式会社 | 複合基板及びその製法 |
| DK3130407T3 (da) * | 2015-08-10 | 2021-02-01 | Apator Miitors Aps | Fremgangsmåde til binding af en piezoelektrisk ultralydstransducer |
| CN108028312B (zh) * | 2015-09-15 | 2021-03-26 | 日本碍子株式会社 | 复合基板的制造方法 |
| JP7195758B2 (ja) * | 2018-04-19 | 2022-12-26 | 株式会社ディスコ | Sawデバイスの製造方法 |
| US11864465B2 (en) * | 2020-05-22 | 2024-01-02 | Wisconsin Alumni Research Foundation | Integration of semiconductor membranes with piezoelectric substrates |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3151644B2 (ja) * | 1993-03-08 | 2001-04-03 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
| JPH0818115A (ja) * | 1994-07-04 | 1996-01-19 | Matsushita Electric Ind Co Ltd | 複合圧電デバイス |
| JP3399164B2 (ja) * | 1995-06-27 | 2003-04-21 | 松下電工株式会社 | 加速度センサ及びその製造方法 |
| JPH10264385A (ja) * | 1997-03-27 | 1998-10-06 | Seiko Epson Corp | 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法 |
| WO2001018857A1 (en) * | 1999-09-03 | 2001-03-15 | University Of Maryland, College Park | Process for fabrication of 3-dimensional micromechanisms |
| FR2823012B1 (fr) * | 2001-04-03 | 2004-05-21 | Commissariat Energie Atomique | Procede de transfert selectif d'au moins un element d'un support initial sur un support final |
| JP2003034035A (ja) * | 2001-07-24 | 2003-02-04 | Ricoh Co Ltd | 液滴吐出ヘッド |
| JP2003309302A (ja) * | 2002-04-18 | 2003-10-31 | Canon Inc | 圧電膜型素子構造体と液体噴射ヘッドおよびそれらの製造方法 |
| US7052117B2 (en) * | 2002-07-03 | 2006-05-30 | Dimatix, Inc. | Printhead having a thin pre-fired piezoelectric layer |
| JP3774782B2 (ja) * | 2003-05-14 | 2006-05-17 | 富士通メディアデバイス株式会社 | 弾性表面波素子の製造方法 |
| WO2005037558A2 (en) * | 2003-10-10 | 2005-04-28 | Dimatix, Inc. | Print head with thin membrane |
| JP4737375B2 (ja) * | 2004-03-11 | 2011-07-27 | セイコーエプソン株式会社 | アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法並びに液体噴射装置の製造方法 |
| US20060018796A1 (en) * | 2004-07-21 | 2006-01-26 | Hans Sitte | Methods and apparatus for preparing multiwell sheets |
| US7420317B2 (en) * | 2004-10-15 | 2008-09-02 | Fujifilm Dimatix, Inc. | Forming piezoelectric actuators |
| WO2006046494A1 (ja) * | 2004-10-25 | 2006-05-04 | Ngk Insulators, Ltd. | 圧電/電歪デバイス |
| US7368860B2 (en) * | 2005-02-11 | 2008-05-06 | The Regents Of The University Od California | High performance piezoelectric actuator |
-
2007
- 2007-05-03 US US11/744,105 patent/US20070257580A1/en not_active Abandoned
- 2007-05-04 WO PCT/US2007/068289 patent/WO2007131198A1/en not_active Ceased
- 2007-05-04 KR KR1020087029801A patent/KR20090018096A/ko not_active Ceased
- 2007-05-04 EP EP07783321A patent/EP2021298A4/en not_active Withdrawn
- 2007-05-04 JP JP2009510111A patent/JP2009536465A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009536465A (ja) | 2009-10-08 |
| EP2021298A1 (en) | 2009-02-11 |
| EP2021298A4 (en) | 2012-08-01 |
| WO2007131198A1 (en) | 2007-11-15 |
| US20070257580A1 (en) | 2007-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20081205 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20120502 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20130628 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20131202 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20130628 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |