KR20090016694A - 재발광 반도체 구성 및 광학 요소를 갖는 ｌｅｄ 소자 - Google Patents

재발광 반도체 구성 및 광학 요소를 갖는 ｌｅｄ 소자 Download PDF

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Publication number
KR20090016694A
KR20090016694A KR1020087029687A KR20087029687A KR20090016694A KR 20090016694 A KR20090016694 A KR 20090016694A KR 1020087029687 A KR1020087029687 A KR 1020087029687A KR 20087029687 A KR20087029687 A KR 20087029687A KR 20090016694 A KR20090016694 A KR 20090016694A
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KR
South Korea
Prior art keywords
optical element
led
light
optical
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020087029687A
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English (en)
Korean (ko)
Inventor
캐서린 에이. 리더데일
앤드류 제이. 오더커크
마이클 에이. 하세
토마스 제이. 밀러
동 루
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20090016694A publication Critical patent/KR20090016694A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0071—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source adapted to illuminate a complete hemisphere or a plane extending 360 degrees around the source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020087029687A 2006-06-12 2007-06-11 재발광 반도체 구성 및 광학 요소를 갖는 ｌｅｄ 소자 Withdrawn KR20090016694A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80454106P 2006-06-12 2006-06-12
US60/804,541 2006-06-12
US80482406P 2006-06-14 2006-06-14
US60/804,824 2006-06-14

Publications (1)

Publication Number Publication Date
KR20090016694A true KR20090016694A (ko) 2009-02-17

Family

ID=38832111

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087029687A Withdrawn KR20090016694A (ko) 2006-06-12 2007-06-11 재발광 반도체 구성 및 광학 요소를 갖는 ｌｅｄ 소자

Country Status (6)

Country Link
EP (1) EP2033236A4 (https=)
JP (1) JP2009540615A (https=)
KR (1) KR20090016694A (https=)
CN (1) CN101467274B (https=)
TW (1) TW200807769A (https=)
WO (1) WO2007146860A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2010143026A (ru) * 2008-03-21 2012-04-27 Конинклейке Филипс Элкектроникс Н.В. (Nl) Светящееся устройство
US7741134B2 (en) * 2008-09-15 2010-06-22 Bridgelux, Inc. Inverted LED structure with improved light extraction
DE102009020127B4 (de) * 2009-03-25 2025-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiode
JP2012033823A (ja) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2013541220A (ja) * 2010-10-27 2013-11-07 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法
DE102012102119A1 (de) * 2012-03-13 2013-09-19 Osram Opto Semiconductors Gmbh Flächenlichtquelle
JP6097084B2 (ja) 2013-01-24 2017-03-15 スタンレー電気株式会社 半導体発光装置
JP2016518033A (ja) * 2013-05-15 2016-06-20 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 光学エレメントとリフレクタを用いた発光デバイス
EP2953176A1 (de) * 2014-06-02 2015-12-09 Swarovski Energy GmbH Beleuchtungsvorrichtung
WO2016150718A1 (en) * 2015-03-20 2016-09-29 Philips Lighting Holding B.V. Uv-c water purification device
KR102507965B1 (ko) * 2015-03-26 2023-03-10 코닌클리케 필립스 엔.브이. 광원
CN105429002B (zh) * 2015-11-23 2018-10-19 深圳瑞波光电子有限公司 一种量子阱半导体激光外延结构及量子阱激光器
CN110945654A (zh) * 2017-05-09 2020-03-31 光引研创股份有限公司 用于不可见光应用的光学装置
US11650403B2 (en) * 2019-02-08 2023-05-16 Meta Platforms Technologies, Llc Optical elements for beam-shaping and illumination
CN121241692A (zh) * 2023-05-25 2025-12-30 艾迈斯-欧司朗国际有限责任公司 光电半导体芯片及相应的产生方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
JP3559446B2 (ja) * 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
DE19955747A1 (de) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6784460B2 (en) * 2002-10-10 2004-08-31 Agilent Technologies, Inc. Chip shaping for flip-chip light emitting diode
KR100641989B1 (ko) * 2003-10-15 2006-11-02 엘지이노텍 주식회사 질화물 반도체 발광소자
CN100521266C (zh) * 2004-08-06 2009-07-29 皇家飞利浦电子股份有限公司 Led灯系统
US7329982B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company LED package with non-bonded optical element
US7330319B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company High brightness LED package with multiple optical elements

Also Published As

Publication number Publication date
TW200807769A (en) 2008-02-01
CN101467274B (zh) 2012-02-29
JP2009540615A (ja) 2009-11-19
CN101467274A (zh) 2009-06-24
EP2033236A4 (en) 2014-10-22
WO2007146860A1 (en) 2007-12-21
EP2033236A1 (en) 2009-03-11

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Date Code Title Description
PA0105 International application

Patent event date: 20081204

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid