KR20090015958A - 반도체 자성 메모리 - Google Patents
반도체 자성 메모리 Download PDFInfo
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- KR20090015958A KR20090015958A KR1020087029867A KR20087029867A KR20090015958A KR 20090015958 A KR20090015958 A KR 20090015958A KR 1020087029867 A KR1020087029867 A KR 1020087029867A KR 20087029867 A KR20087029867 A KR 20087029867A KR 20090015958 A KR20090015958 A KR 20090015958A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000007667 floating Methods 0.000 claims abstract description 41
- 230000005641 tunneling Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 230000005415 magnetization Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 72
- 239000000463 material Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 239000002885 antiferromagnetic material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920001690 polydopamine Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical group [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- FHKNFXAIEAYRKQ-UHFFFAOYSA-N [Cu].[Ir] Chemical compound [Cu].[Ir] FHKNFXAIEAYRKQ-UHFFFAOYSA-N 0.000 description 1
- VSJAOVNRSJPGBS-UHFFFAOYSA-N [Pt].[Mn].[Cr] Chemical compound [Pt].[Mn].[Cr] VSJAOVNRSJPGBS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
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Abstract
Description
Claims (20)
- 반도체 자성 메모리 셀로서,제1 자계를 생성하기 위해 제어 게이트 주위에 형성된 플로팅 게이트를 갖는 메모리 셀; 및상기 제1 자계 및 제2 자계에 응답하여 상기 플로팅 게이트의 프로그래밍 및 소거를 허용하도록 상기 메모리 셀에 연결된 자성 터널링 접합(magnetic tunneling junction)을 포함하는 반도체 자성 메모리 셀.
- 제1항에 있어서,상기 자성 터널링 접합은 기입 전압 및 상기 제1 자계에 응답하여 상기 플로팅 게이트를 프로그래밍하기 위해 프로그램/소거 라인에 연결되는 반도체 자성 메모리 셀.
- 제2항에 있어서,상기 자성 터널링 접합은 전극을 통해 상기 프로그램/소거 라인에 연결되는 반도체 자성 메모리 셀.
- 제2항에 있어서,상기 제1 및 제2 자계들이, 상기 자성 터널링 접합의 저항이 단지 상기 제1 자계보다 큰 정도로 감소시키도록, 상기 제1 자계에 직교하는 상기 제2 자계를 생성하기 위해 상기 프로그램/소거 라인 위에 형성된 셀 선택 라인을 더 포함하는 반도체 자성 메모리 셀.
- 제1항에 있어서,상기 자성 터널링 접합은 제1 및 제2 자성 층들 간에 연결된 터널링 층으로 이루어지는 반도체 자성 메모리 셀.
- 제5항에 있어서,상기 제1 자성 층의 자화 방향을 제어하기 위해, 상기 제1 자성 층과 상기 플로팅 게이트 간에 연결된 피닝 층(pinning layer)를 더 포함하는 반도체 자성 메모리 셀.
- 제1항에 있어서,상기 제어 게이트는 제1 및 제2 층들로 이루어지는 반도체 자성 메모리 셀.
- 제7항에 있어서,상기 제1 층은 폴리실리콘으로 이루어지고, 상기 제2 층은 폴리사이드(polycide)로 이루어지는 반도체 자성 메모리 셀.
- 제1항에 있어서,행(row)들 및 열(column)들로 조직화된 자성 메모리 어레이를 더 포함하고,상기 메모리 어레이는,메모리 셀들의 행들에 연결된 복수의 워드 라인들;상기 복수의 워드 라인들에 대해 직교하는 방향으로 형성된 복수의 셀 선택 라인들 - 각각의 선택된 셀 선택 라인은 제1 전류에 응답하여 제1 자계를 생성함 - ; 및복수의 자성 메모리 셀들을 포함하고,각각의 메모리 셀은,상기 제1 워드 라인 상의 제2 전류에 응답하여 제2 자계를 생성하기 위해 제1 워드 라인에 연결된 제어 게이트;전하를 저장하기 위해, 상기 제어 게이트 주위에 형성된 플로팅 게이트; 및상기 제1 및 제2 자계들에 응답하여 상기 플로팅 게이트의 프로그래밍 및 소거를 허용하기 위해 상기 플로팅 게이트에 연결된 자성 터널링 접합을 포함하는 반도체 자성 메모리 셀.
- 제9항에 있어서,상기 메모리 어레이는 NAND 또는 NOR 아키텍쳐들 중 하나로 이루어지는 반도 체 자성 메모리 셀.
- 제9항에 있어서,상기 자성 터널링 접합과 상기 셀 선택 라인 간에 형성된 프로그램/소거 라인을 더 포함하고, 상기 프로그램/소거 라인은 프로그램 동작 또는 소거 동작 각각에 응답하여 프로그램 또는 소거 전압 중 하나로 바이어스되도록 구성되는 반도체 자성 메모리 셀.
- 자성 메모리 셀을 제조하는 방법으로서,제1 폴리실리콘 층을 형성하는 단계;상기 제1 폴리실리콘 층 위에 산화물-질화물-산화물 층을 형성하는 단계;상기 산화물-질화물-산화물 층 위에 제어 게이트를 형성하는 단계;개별 제어 게이트 스택들을 형성하기 위해 상기 제1 폴리실리콘 층까지 아래로 에칭하는 단계;상기 제어 게이트 스택들 및 상기 스택들 간의 노출된 제1 폴리실리콘 층 위에 절연 층을 형성하는 단계;상기 절연 층의 미리 결정된 부분들을 제거하는 에칭 공정을 행하는 단계;상기 에칭된 절연 층 위에 폴리실리콘 블랭킷(blanket)을 형성하는 단계;개별 플로팅 게이트들을 형성하기 위해 상기 폴리실리콘 블랭킷을 에칭하는 단계;상기 플로팅 게이트들 각각 위에 피닝 층을 형성하는 단계; 및상기 피닝 층들 각각 위에 자성 터널 접합을 형성하는 단계를 포함하는 자성 메모리 셀 제조 방법.
- 제12항에 있어서,상기 자성 터널 접합 위에 전극을 형성하는 단계를 더 포함하는 자성 메모리 셀 제조 방법.
- 제12항에 있어서,상기 제1 폴리실리콘 층을 형성하기 전에 터널 유전체 층을 형성하는 단계를 더 포함하는 자성 메모리 셀 제조 방법.
- 제12항에 있어서,상기 제어 게이트를 형성하는 단계는,상기 산화물-질화물-산화물 층 위에 제2 폴리실리콘 층을 형성하는 단계; 및상기 제2 폴리실리콘 층 위에 폴리사이드 층을 형성하는 단계를 포함하는 자성 메모리 셀 제조 방법.
- 제12항에 있어서,상기 절연 층은 질화물로 이루어지는 자성 메모리 셀 제조 방법.
- 제12항에 있어서,상기 자성 터널 접합을 형성하는 단계는,상기 피닝 층 위에 제1 자성 층을 형성하는 단계;상기 제1 자성 층 위에 터널링 장벽을 형성하는 단계; 및상기 터널링 장벽 위에 제2 자성 층을 형성하는 단계를 포함하는 자성 메모리 셀 제조 방법.
- 자성 터널링 접합을 포함하는 메모리 셀을 프로그래밍하는 방법으로서,상기 메모리 셀에 연결된 선택된 워드 라인을 통한 제1 전류에 응답하여 제1 자계를 생성하는 단계;상기 메모리 셀 위에 위치되고, 상기 선택된 워드 라인에 직교하는 셀 선택 라인을 통한 제2 전류에 응답하여 제2 자계를 생성하는 단계; 및기입 전압으로 프로그램/소거 라인을 바이어스하는 단계를 포함하는 메모리 셀 프로그래밍 방법.
- 자성 터널링 접합을 포함하는 메모리 셀을 소거하는 방법으로서,상기 메모리 셀에 연결된 선택된 워드 라인을 통한 제1 전류에 응답하여 제1 자계를 생성하는 단계;상기 메모리 셀 위에 위치하고 상기 선택된 워드 라인에 직교하는 셀 선택 라인을 통한 제2 전류에 응답하여 제2 자계를 생성하는 단계; 및소거 전압으로 프로그램/소거 라인을 바이어스하는 단계를 포함하는 메모리 셀 소거 방법.
- 제19항에 있어서,상기 소거 전압은 포지티브 전압인 메모리 셀 소거 방법.
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GB2453274A (en) | 2009-04-01 |
US7486550B2 (en) | 2009-02-03 |
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US20090129167A1 (en) | 2009-05-21 |
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