CN114067875A - 一种磁存储器及其数据擦除方法 - Google Patents
一种磁存储器及其数据擦除方法 Download PDFInfo
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- CN114067875A CN114067875A CN202111366675.4A CN202111366675A CN114067875A CN 114067875 A CN114067875 A CN 114067875A CN 202111366675 A CN202111366675 A CN 202111366675A CN 114067875 A CN114067875 A CN 114067875A
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- erasing
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- tunnel junction
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 28
- 230000008859 change Effects 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 description 10
- 230000001105 regulatory effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202111366675.4A CN114067875A (zh) | 2021-11-18 | 2021-11-18 | 一种磁存储器及其数据擦除方法 |
Applications Claiming Priority (1)
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CN202111366675.4A CN114067875A (zh) | 2021-11-18 | 2021-11-18 | 一种磁存储器及其数据擦除方法 |
Publications (1)
Publication Number | Publication Date |
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CN114067875A true CN114067875A (zh) | 2022-02-18 |
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Family Applications (1)
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CN202111366675.4A Pending CN114067875A (zh) | 2021-11-18 | 2021-11-18 | 一种磁存储器及其数据擦除方法 |
Country Status (1)
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CN (1) | CN114067875A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1729539A (zh) * | 2002-12-18 | 2006-02-01 | 皇家飞利浦电子股份有限公司 | 用于保护一个mram装置不受窜改的方法和装置 |
CN101461064A (zh) * | 2006-06-06 | 2009-06-17 | 美光科技公司 | 半导体磁性存储器 |
CN112151089A (zh) * | 2019-06-28 | 2020-12-29 | 中电海康集团有限公司 | 存储器 |
CN112701217A (zh) * | 2020-12-28 | 2021-04-23 | 西安交通大学 | 一种磁性结构和自旋转移矩-磁随机存储器及其写入方法 |
CN113451505A (zh) * | 2021-02-25 | 2021-09-28 | 北京航空航天大学 | 磁性随机存储单元、存储器及设备 |
-
2021
- 2021-11-18 CN CN202111366675.4A patent/CN114067875A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1729539A (zh) * | 2002-12-18 | 2006-02-01 | 皇家飞利浦电子股份有限公司 | 用于保护一个mram装置不受窜改的方法和装置 |
CN101461064A (zh) * | 2006-06-06 | 2009-06-17 | 美光科技公司 | 半导体磁性存储器 |
CN112151089A (zh) * | 2019-06-28 | 2020-12-29 | 中电海康集团有限公司 | 存储器 |
CN112701217A (zh) * | 2020-12-28 | 2021-04-23 | 西安交通大学 | 一种磁性结构和自旋转移矩-磁随机存储器及其写入方法 |
CN113451505A (zh) * | 2021-02-25 | 2021-09-28 | 北京航空航天大学 | 磁性随机存储单元、存储器及设备 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Jin Hui Inventor after: Yin Jialiang Inventor before: Jin Hui Inventor before: Yin Jialiang |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20231222 Address after: Room 1605, Building 1, No. 117 Yingshan Red Road, Huangdao District, Qingdao City, Shandong Province, 266400 Applicant after: Qingdao Haicun Microelectronics Co.,Ltd. Address before: 100191 rooms 504a and 504b, 5th floor, 23 Zhichun Road, Haidian District, Beijing Applicant before: Zhizhen storage (Beijing) Technology Co.,Ltd. |