KR20090008268A - 정합 방법 - Google Patents

정합 방법 Download PDF

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Publication number
KR20090008268A
KR20090008268A KR1020087025965A KR20087025965A KR20090008268A KR 20090008268 A KR20090008268 A KR 20090008268A KR 1020087025965 A KR1020087025965 A KR 1020087025965A KR 20087025965 A KR20087025965 A KR 20087025965A KR 20090008268 A KR20090008268 A KR 20090008268A
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KR
South Korea
Prior art keywords
pattern
layer
matching method
matching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087025965A
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English (en)
Korean (ko)
Inventor
앤드레아 에스 리버스
티모시 존 트레드웰
로버트 하워드 커프니
제임스 토마스 스툽스
조슈아 먼로 코브
Original Assignee
이스트맨 코닥 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20090008268A publication Critical patent/KR20090008268A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020087025965A 2006-03-31 2007-03-16 정합 방법 Ceased KR20090008268A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/396,167 US7368207B2 (en) 2006-03-31 2006-03-31 Dynamic compensation system for maskless lithography
US11/396,167 2006-03-31

Publications (1)

Publication Number Publication Date
KR20090008268A true KR20090008268A (ko) 2009-01-21

Family

ID=38289988

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087025965A Ceased KR20090008268A (ko) 2006-03-31 2007-03-16 정합 방법

Country Status (7)

Country Link
US (1) US7368207B2 (https=)
EP (1) EP2002308A1 (https=)
JP (1) JP2009532863A (https=)
KR (1) KR20090008268A (https=)
CN (1) CN101416113A (https=)
TW (1) TW200741376A (https=)
WO (1) WO2007120420A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9841686B2 (en) 2014-12-29 2017-12-12 Samsung Display Co., Ltd. Exposure method, exposure device for performing the method and manufacturing method of display substrate using the method
KR20230004789A (ko) * 2020-04-29 2023-01-06 어플라이드 머티어리얼스, 인코포레이티드 디지털 리소그래피를 위한 이미지 안정화

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US7541201B2 (en) * 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
DE102010015944B4 (de) * 2010-01-14 2016-07-28 Dusemund Pte. Ltd. Dünnungsvorrichtung mit einer Nassätzeinrichtung und einer Überwachungsvorrichtung sowie Verfahren für ein in-situ Messen von Waferdicken zum Überwachen eines Dünnens von Halbleiterwafern
KR101059811B1 (ko) * 2010-05-06 2011-08-26 삼성전자주식회사 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법
US8489225B2 (en) * 2011-03-08 2013-07-16 International Business Machines Corporation Wafer alignment system with optical coherence tomography
GB2489722B (en) 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
DE102011051146B3 (de) 2011-06-17 2012-10-04 Precitec Optronik Gmbh Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben
TWI453523B (zh) 2011-12-29 2014-09-21 Ind Tech Res Inst 具有自動對焦功能之診斷設備
DE102012111008B4 (de) 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
DE102014008584B4 (de) 2013-06-17 2021-05-27 Precitec Optronik Gmbh Optische Messvorrichtung zum Erfassen von Abstandsdifferenzen und optisches Messverfahren
US10725478B2 (en) * 2013-07-02 2020-07-28 The Boeing Company Robotic-mounted monument system for metrology systems
CN106896647B (zh) * 2013-10-22 2019-05-10 应用材料公司 用于基于网的处理的无掩模平版印刷
US9261794B1 (en) * 2014-12-09 2016-02-16 Cymer, Llc Compensation for a disturbance in an optical source
CA2924160A1 (en) * 2016-03-18 2017-09-18 Chaji, Reza Maskless patterning
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
DE102017126310A1 (de) 2017-11-09 2019-05-09 Precitec Optronik Gmbh Abstandsmessvorrichtung
DE102018130901A1 (de) 2018-12-04 2020-06-04 Precitec Optronik Gmbh Optische Messeinrichtung
US12467733B2 (en) 2020-06-19 2025-11-11 Precitec Optronik Gmbh Chromatic confocal measuring device
TW202241784A (zh) * 2021-04-26 2022-11-01 揚朋科技股份有限公司 高效供料系統
KR102708619B1 (ko) * 2021-12-27 2024-09-23 권영우 포토리소그래피 교육 장치 및 이를 이용하여 포토리소그래피 공정을 학습하는 방법
WO2025255676A1 (en) * 2024-06-14 2025-12-18 Vuereal Inc. An automated ai-based maskless aligner for microleds

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US4818885A (en) * 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table
US5406541A (en) 1992-12-29 1995-04-11 Eastman Kodak Company Apparatus and method for a dual half-aperture focus sensor system
JPH07283110A (ja) 1994-04-07 1995-10-27 Nikon Corp 走査露光装置
US5521748A (en) 1994-06-16 1996-05-28 Eastman Kodak Company Light modulator with a laser or laser array for exposing image data
JP4011642B2 (ja) * 1995-12-15 2007-11-21 株式会社日立製作所 電子線描画方法及び装置
US6156220A (en) * 1997-03-10 2000-12-05 Ohlig; Albert H. System and method for optically aligning films and substrates used in printed circuit boards
US6251550B1 (en) 1998-07-10 2001-06-26 Ball Semiconductor, Inc. Maskless photolithography system that digitally shifts mask data responsive to alignment data
JP3316676B2 (ja) * 1998-09-18 2002-08-19 株式会社オーク製作所 ワークとマスクの整合機構および整合方法
KR20020074163A (ko) * 2000-10-19 2002-09-28 크레오 아이엘. 리미티드. 인쇄 회로 기판 제조 시의 비선형 이미지 왜곡 보정
EP1482373A1 (en) 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7102733B2 (en) 2004-08-13 2006-09-05 Asml Holding N.V. System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9841686B2 (en) 2014-12-29 2017-12-12 Samsung Display Co., Ltd. Exposure method, exposure device for performing the method and manufacturing method of display substrate using the method
US10845714B2 (en) 2014-12-29 2020-11-24 Samsung Display Co., Ltd. Exposure method, exposure device for performing the method and manufacturing method of display substrate using the method
KR20230004789A (ko) * 2020-04-29 2023-01-06 어플라이드 머티어리얼스, 인코포레이티드 디지털 리소그래피를 위한 이미지 안정화

Also Published As

Publication number Publication date
EP2002308A1 (en) 2008-12-17
TW200741376A (en) 2007-11-01
US7368207B2 (en) 2008-05-06
JP2009532863A (ja) 2009-09-10
CN101416113A (zh) 2009-04-22
WO2007120420A1 (en) 2007-10-25
US20070231717A1 (en) 2007-10-04

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