TW200741376A - Dynamic compensation system for maskless lithography - Google Patents

Dynamic compensation system for maskless lithography

Info

Publication number
TW200741376A
TW200741376A TW096111439A TW96111439A TW200741376A TW 200741376 A TW200741376 A TW 200741376A TW 096111439 A TW096111439 A TW 096111439A TW 96111439 A TW96111439 A TW 96111439A TW 200741376 A TW200741376 A TW 200741376A
Authority
TW
Taiwan
Prior art keywords
pattern
compensation system
dynamic compensation
maskless lithography
layer
Prior art date
Application number
TW096111439A
Other languages
English (en)
Chinese (zh)
Inventor
Andrea S Rivers
Timothy J Tredwell
Robert H Cuffney
James T Stoops
Joshua M Cobb
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200741376A publication Critical patent/TW200741376A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096111439A 2006-03-31 2007-03-30 Dynamic compensation system for maskless lithography TW200741376A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/396,167 US7368207B2 (en) 2006-03-31 2006-03-31 Dynamic compensation system for maskless lithography

Publications (1)

Publication Number Publication Date
TW200741376A true TW200741376A (en) 2007-11-01

Family

ID=38289988

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111439A TW200741376A (en) 2006-03-31 2007-03-30 Dynamic compensation system for maskless lithography

Country Status (7)

Country Link
US (1) US7368207B2 (https=)
EP (1) EP2002308A1 (https=)
JP (1) JP2009532863A (https=)
KR (1) KR20090008268A (https=)
CN (1) CN101416113A (https=)
TW (1) TW200741376A (https=)
WO (1) WO2007120420A1 (https=)

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DE102010015944B4 (de) * 2010-01-14 2016-07-28 Dusemund Pte. Ltd. Dünnungsvorrichtung mit einer Nassätzeinrichtung und einer Überwachungsvorrichtung sowie Verfahren für ein in-situ Messen von Waferdicken zum Überwachen eines Dünnens von Halbleiterwafern
KR101059811B1 (ko) * 2010-05-06 2011-08-26 삼성전자주식회사 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법
US8489225B2 (en) * 2011-03-08 2013-07-16 International Business Machines Corporation Wafer alignment system with optical coherence tomography
GB2489722B (en) 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
DE102011051146B3 (de) 2011-06-17 2012-10-04 Precitec Optronik Gmbh Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben
TWI453523B (zh) 2011-12-29 2014-09-21 Ind Tech Res Inst 具有自動對焦功能之診斷設備
DE102012111008B4 (de) 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
DE102014008584B4 (de) 2013-06-17 2021-05-27 Precitec Optronik Gmbh Optische Messvorrichtung zum Erfassen von Abstandsdifferenzen und optisches Messverfahren
US10725478B2 (en) * 2013-07-02 2020-07-28 The Boeing Company Robotic-mounted monument system for metrology systems
CN106896647B (zh) * 2013-10-22 2019-05-10 应用材料公司 用于基于网的处理的无掩模平版印刷
US9261794B1 (en) * 2014-12-09 2016-02-16 Cymer, Llc Compensation for a disturbance in an optical source
KR102421913B1 (ko) 2014-12-29 2022-07-19 삼성디스플레이 주식회사 노광 방법, 이를 수행하기 위한 노광 장치 및 이를 이용한 표시 기판의 제조방법
CA2924160A1 (en) * 2016-03-18 2017-09-18 Chaji, Reza Maskless patterning
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
DE102017126310A1 (de) 2017-11-09 2019-05-09 Precitec Optronik Gmbh Abstandsmessvorrichtung
DE102018130901A1 (de) 2018-12-04 2020-06-04 Precitec Optronik Gmbh Optische Messeinrichtung
JP7498299B2 (ja) * 2020-04-29 2024-06-11 アプライド マテリアルズ インコーポレイテッド デジタルリソグラフィ用の画像安定化
US12467733B2 (en) 2020-06-19 2025-11-11 Precitec Optronik Gmbh Chromatic confocal measuring device
TW202241784A (zh) * 2021-04-26 2022-11-01 揚朋科技股份有限公司 高效供料系統
KR102708619B1 (ko) * 2021-12-27 2024-09-23 권영우 포토리소그래피 교육 장치 및 이를 이용하여 포토리소그래피 공정을 학습하는 방법
WO2025255676A1 (en) * 2024-06-14 2025-12-18 Vuereal Inc. An automated ai-based maskless aligner for microleds

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KR20020074163A (ko) * 2000-10-19 2002-09-28 크레오 아이엘. 리미티드. 인쇄 회로 기판 제조 시의 비선형 이미지 왜곡 보정
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US7102733B2 (en) 2004-08-13 2006-09-05 Asml Holding N.V. System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool

Also Published As

Publication number Publication date
EP2002308A1 (en) 2008-12-17
US7368207B2 (en) 2008-05-06
KR20090008268A (ko) 2009-01-21
JP2009532863A (ja) 2009-09-10
CN101416113A (zh) 2009-04-22
WO2007120420A1 (en) 2007-10-25
US20070231717A1 (en) 2007-10-04

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