KR20080111431A - 몰드 재형상 웨이퍼 및 이를 이용한 스택 패키지 - Google Patents
몰드 재형상 웨이퍼 및 이를 이용한 스택 패키지 Download PDFInfo
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- KR20080111431A KR20080111431A KR1020080125949A KR20080125949A KR20080111431A KR 20080111431 A KR20080111431 A KR 20080111431A KR 1020080125949 A KR1020080125949 A KR 1020080125949A KR 20080125949 A KR20080125949 A KR 20080125949A KR 20080111431 A KR20080111431 A KR 20080111431A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
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- 238000005538 encapsulation Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052751 metal Inorganic materials 0.000 description 20
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- 239000010703 silicon Substances 0.000 description 13
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Abstract
Description
Claims (18)
- 상면에 본딩 패드들이 구비된 다수의 반도체 칩;상기 반도체 칩들의 측면 및 하면을 감싸도록 형성된 몰드부;상기 각 반도체 칩의 측면 몰드부 부분에 형성된 관통 전극; 및상기 관통 전극과 이에 인접한 본딩 패드를 상호 연결시키도록 형성된 재배선;을 포함하는 것을 특징으로 하는 몰드 재형상 웨이퍼.
- 제 1 항에 있어서,상기 관통 전극은 상기 반도체 칩의 하면 보다 깊은 깊이로 형성된 것을 특징으로 하는 몰드 재형상 웨이퍼.
- 제 1 항에 있어서,상기 관통 전극 및 재배선은 주석(Sn), 니켈(Ni), 구리(Cu), 금(Au) 및 알루미늄(Al) 중 어느 하나 또는 이들의 합금으로 형성된 것을 특징으로 하는 몰드 재형상 웨이퍼.
- 제 1 항에 있어서,상기 관통 전극과 재배선은 일체형으로 이루어진 것을 특징으로 하는 몰드 재형상 웨이퍼.
- 적어도 둘 이상의 패키지 유닛이 스택된 스택 패키지에 있어서,상기 패키지 유닛은,상면에 본딩 패드들이 구비된 반도체 칩;상기 반도체 칩의 측면을 감싸도록 형성된 몰드부;상기 몰드부 내에 형성된 관통 전극; 및상기 관통 전극과 이에 인접한 본딩 패드를 상호 연결시키도록 형성된 재배선;을 포함하는 것을 특징으로 하는 스택 패키지.
- 제 5 항에 있어서,상기 관통 전극의 하면은 상기 패키지 유닛의 하면으로 돌출된 것을 특징으로 하는 스택 패키지.
- 제 5 항에 있어서,상기 관통 전극과 재배선은 일체형으로 이루어진 것을 특징으로 하는 스택 패키지.
- 제 5 항에 있어서,상기 관통 전극 및 재배선은 주석(Sn), 니켈(Ni), 구리(Cu), 금(Au) 및 알루미늄(Al) 중 어느 하나 또는 이들의 합금으로 형성된 것을 특징으로 하는 스택 패키지.
- 제 5 항에 있어서,상기 스택된 각 패키지 유닛들에 구비된 반도체 칩은 다른 크기를 갖는 것을 특징으로 하는 스택 패키지.
- 제 9 항에 있어서,상기 다른 크기를 갖는 반도체 칩을 포함하는 각 패키지 유닛들은 동일한 크기를 갖는 것을 특징으로 하는 스택 패키지.
- 제 5 항에 있어서,상기 스택된 패키지 유닛들이 부착되는 기판을 더 포함하는 것을 특징으로 하는 스택 패키지.
- 제 11 항에 있어서,상기 기판의 하면에 부착된 외부접속단자를 더 포함하는 것을 특징으로 하는 스택 패키지.
- 제 11 항에 있어서,상기 스택된 패키지 유닛들 사이 및 상기 스택된 최하부 패키지 유닛과 기판 사이에 개재된 매립재를 더 포함하는 것을 특징으로 하는 스택 패키지.
- 제 11 항에 있어서,상기 스택된 최상부 패키지 유닛 상면에 형성된 캡핑막을 더 포함하는 것을 특징으로 하는 스택 패키지.
- 제 11 항에 있어서,상기 스택된 패키지 유닛들 사이와, 스택된 최하부 패키지 유닛과 기판 사이 및 스택된 최상부 패키지 유닛 상부를 포함한 상기 기판 상면을 덮도록 형성된 봉지부를 더 포함하는 것을 특징으로 하는 스택 패키지.
- 제 11 항에 있어서,상기 스택된 패키지 유닛들은 페이스 다운 타입으로 기판 상에 스택된 것을 특징으로 하는 스택 패키지.
- 제 16 항에 있어서,상기 스택된 최상부 패키지 유닛 상에 스택된 관통 전극 및 재배선이 구비되지 않은 반도체 칩을 더 포함하는 것을 특징으로 하는 스택 패키지.
- 제 17 항에 있어서,상기 관통 전극 및 재배선이 구비되지 않은 반도체 칩은 스택된 최상부 패키지 유닛의 관통 전극과 대응하도록 형성된 재배선된 본딩 패드를 더 포함하는 것을 특징으로 하는 스택 패키지.
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Cited By (7)
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KR101037827B1 (ko) * | 2009-10-06 | 2011-05-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 |
KR20110107180A (ko) * | 2010-03-24 | 2011-09-30 | 삼성전자주식회사 | 패키지-온-패키지 형성방법 및 관련된 소자 |
KR20140007659A (ko) * | 2012-07-10 | 2014-01-20 | 삼성전자주식회사 | 멀티-칩 패키지 및 그의 제조 방법 |
KR101362396B1 (ko) * | 2012-05-08 | 2014-02-14 | 앰코 테크놀로지 코리아 주식회사 | Tsv를 이용한 반도체 패키지 및 그 제조 방법 |
US8829665B2 (en) | 2010-07-09 | 2014-09-09 | SK Hynix Inc. | Semiconductor chip and stack package having the same |
KR101538541B1 (ko) * | 2013-07-16 | 2015-07-22 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 |
WO2021149984A1 (ko) * | 2020-01-22 | 2021-07-29 | 서울바이오시스주식회사 | 발광 소자 및 그것을 가지는 디스플레이 장치 |
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KR100537892B1 (ko) * | 2003-08-26 | 2005-12-21 | 삼성전자주식회사 | 칩 스택 패키지와 그 제조 방법 |
KR20070048952A (ko) * | 2005-11-07 | 2007-05-10 | 삼성전자주식회사 | 내부 접속 단자를 갖는 멀티 칩 패키지 |
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KR101037827B1 (ko) * | 2009-10-06 | 2011-05-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 |
KR20110107180A (ko) * | 2010-03-24 | 2011-09-30 | 삼성전자주식회사 | 패키지-온-패키지 형성방법 및 관련된 소자 |
US8829665B2 (en) | 2010-07-09 | 2014-09-09 | SK Hynix Inc. | Semiconductor chip and stack package having the same |
KR101362396B1 (ko) * | 2012-05-08 | 2014-02-14 | 앰코 테크놀로지 코리아 주식회사 | Tsv를 이용한 반도체 패키지 및 그 제조 방법 |
KR20140007659A (ko) * | 2012-07-10 | 2014-01-20 | 삼성전자주식회사 | 멀티-칩 패키지 및 그의 제조 방법 |
KR101538541B1 (ko) * | 2013-07-16 | 2015-07-22 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 |
WO2021149984A1 (ko) * | 2020-01-22 | 2021-07-29 | 서울바이오시스주식회사 | 발광 소자 및 그것을 가지는 디스플레이 장치 |
US11626391B2 (en) | 2020-01-22 | 2023-04-11 | Seoul Viosys Co., Ltd. | Light emitting device and display apparatus having the same |
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