KR20080090285A - Wiring board and method of manufacturing the same - Google Patents

Wiring board and method of manufacturing the same Download PDF

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Publication number
KR20080090285A
KR20080090285A KR1020080028198A KR20080028198A KR20080090285A KR 20080090285 A KR20080090285 A KR 20080090285A KR 1020080028198 A KR1020080028198 A KR 1020080028198A KR 20080028198 A KR20080028198 A KR 20080028198A KR 20080090285 A KR20080090285 A KR 20080090285A
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South Korea
Prior art keywords
layer
nickel
copper
wiring
resist pattern
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KR1020080028198A
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Korean (ko)
Inventor
도모오 야마사키
Original Assignee
신꼬오덴기 고교 가부시키가이샤
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Publication of KR20080090285A publication Critical patent/KR20080090285A/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists

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  • Manufacturing Of Printed Wiring (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

A wiring board and a method for manufacturing the same are provided to secure a sufficient bonding property to a resin layer by forming a wiring layer on the resin layer with a nickel-copper alloy within a predetermined composition range. A method for manufacturing a wiring board includes the steps of: forming a nickel-copper alloy bonding seed layer(20) on an entire surface of a region on a resin insulating layer(10) at which a wiring layer is to be formed; forming a plated resist pattern(16) on the bonding seed layer; forming a copper wiring layer(19) in an opening of the plated resist pattern through electrolytic plating by using the bonding seed layer as a feeding layer; removing the plated resist pattern; and removing the bonding seed layer of a portion exposed by removing the plated resist pattern.

Description

WIRING BOARD AND METHOD OF MANUFACTURING THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board and a method for manufacturing the wiring board. In particular, a wiring board including a wiring layer capable of ensuring adhesion with a grounded resin insulating layer without requiring complicated steps and methods of manufacturing the wiring board, and a A method of manufacturing a wiring board.

Conventionally, in a wiring board such as a semiconductor package, when forming a copper wiring layer on the resin insulating layer, Ni, Ti, V, Nb, Ta, Cr on the surface of the resin layer in order to ensure adhesion between the copper of the wiring layer and the resin of the insulating layer. A bonding layer such as a metal such as Mo, W, W, or a copper nitride is formed, and a copper wiring layer is formed thereon. The wiring forming process will be described taking the case of using nickel (Ni) as a representative adhesion layer as an example.

As shown in Fig. 1A, for example, a resin layer 10 having an thickness of about 50 mu m and composed of epoxy is prepared as an interlayer insulating film of a wiring board.

As shown in FIG. 1B, the surface of the resin layer 10 is cleaned with an argon gas plasma and maintained in a vacuum, and the nickel adhesion layer 12 is disposed in an argon gas environment of about 0.5 Pa. The copper seed layer 14 is formed by sputtering sequentially. For example, the nickel adhesion layer 12 is 50 nm thick, and the copper seed layer 14 is 500 nm thick.

As shown in FIG. 1C, a plated resist pattern 16 is formed on the copper seed layer 14 through photoresist coating, pattern exposure, and development.

As shown in Fig. 1D, the nickel adhesion layer 12 / copper seed layer 14 is used as a feeding layer to perform electrolytic copper plating, and the opening of the plating resist pattern 16 ( An electrolytic copper plating layer 18 is formed on the copper seed layer 14 exposed in the trench.

As shown in Fig. 1E, the plating resist pattern 16 is peeled off.

As shown in FIG. 1F, an unnecessary portion of the copper seed layer 14 exposed by the stripping removal of the plating resist pattern 16 is removed with a sulfuric acid based echant.

As shown in FIG. 1G, unnecessary portions of the nickel adhesion layer 12 exposed through the removal of the copper seed layer 14 are removed with a nitric acid based etchant. In this way, the wiring layer 17 of the predetermined pattern which consists of the adhesion layer 12, the seed layer 14, and the electrolytic copper plating layer 18 is completed.

The copper wiring layer 17 thus formed is sufficiently secured to the resin layer 10 by the nickel adhesion layer 12.

However, the two-layer structure of the nickel adhesion layer 12 / copper seed layer 14 has the following problems [1] and [2].

Problem [1]

In the step where sputtering is performed, for example, two targets are required for the formation of the nickel adhesion layer 12 and the copper seed layer 14. In addition, considering the technology of the manufacturing process, two sputtering chambers may be required. As a result, manufacturing costs increase.

Problem [2]

The nickel adhesion layer 12 and the copper seed layer 14 are removed with separate etching solutions, which inevitably requires two etching processes.

In order to solve this problem, patent document 1 has proposed the method of forming an adhesion layer from CuN.

Resolution of problem [1]

Nitrogen gas is injected using a copper target, and reactive sputtering is performed to form a CuN adhesion layer. In the same chamber, the injection of nitrogen gas is continuously stopped and sputtering using the same copper target is performed. In this way, a copper seed layer can be formed on a CuN adhesion layer. Therefore, an increase in manufacturing cost can be prevented.

Resolution of problem [2]

Since the CuN adhesion layer and the copper seed layer formed thereon can be removed with the same sulfate-based copper etching solution, one etching is sufficient.

However, the above-described method has a problem in that the final adhesion between the electrolytic copper plating wiring layer and the resin layer is weak compared with the two-layer structure of the nickel adhesion layer 12 / copper seed layer 14.

[Patent Document 1]

Japanese Laid-Open Patent Publication 2003-218516

The present invention provides a wiring board and a wiring board which can form a seed layer and an adhesion layer on the resin layer, and do not require a complicated process of removing unnecessary portions of both layers, and can form a wiring layer which maintains excellent adhesion with the resin layer. It is an object to provide a manufacturing method.

In order to achieve the said objective, the 1st aspect of this invention is a wiring board,

Resin insulating layer;

A nickel-copper alloy adhesion seed layer composed of 20 to 75 wt% nickel and the remaining copper formed on the resin insulating layer; And

And a copper wiring layer composed of copper formed on the nickel-copper alloy adhesion seed layer.

The 2nd aspect of this invention is a method of manufacturing the wiring board which concerns on said 1st aspect,

Forming a nickel-copper alloy adhesion seed layer on the entire surface of the region where the wiring layer on the resin insulating layer is to be formed;

Forming a plating resist pattern on the adhesion seed layer;

Forming a copper wiring layer by electroplating in the opening of the plating resist pattern using the close seed layer as a feed layer;

Removing the plating resist pattern; And

Removing the contact seed layer in the exposed portion by removal of the plating resist pattern.

The 3rd aspect of this invention is a method of manufacturing the wiring board which concerns on said 1st aspect,

Forming a nickel-copper alloy adhesion seed layer on the entire surface of the region where the wiring layer on the resin insulating layer is to be formed;

Forming a copper wiring layer on an entire surface of the contact seed layer;

Forming an etching resist pattern on the copper wiring layer;

Forming a wiring layer by patterning all at once by etching the copper wiring layer and the close seed layer below using the etching resist pattern as a mask; And

Removing the etch resist pattern.

Moreover, in order to achieve the objective of this invention, the 4th aspect of this invention is a wiring board containing a resin insulating layer and the wiring layer on it,

The wiring layer is composed of a nickel-copper alloy of 20 to 75 wt% nickel and the remaining copper over the entire thickness.

5th aspect of this invention is a method of manufacturing the wiring board which concerns on said 4th aspect,

Forming a metal layer of a nickel-copper alloy on the entire surface of the region where the wiring layer on the resin insulating layer is to be formed;

Forming an etching resist pattern on the metal layer;

Using the etching resist pattern as a mask, patterning a metal layer of the nickel-copper alloy by etching to form a wiring layer; And

Removing the etch resist pattern.

According to the first invention, the seed layer serving as an adhesion layer, that is, the adhesion seed layer is composed of a nickel-copper alloy in a predetermined composition range.

Thereby, formation of an adhesion layer and a seed layer and removal of the unnecessary part of both these layers can be performed by one process, respectively. At the same time, it is possible to ensure sufficient adhesion between the wiring layer and the resin layer.

According to the second invention, the wiring layer itself is formed directly on the resin layer with a nickel-copper alloy in a predetermined composition range. Thereby, wiring can be formed by one process, without needing to form an adhesion layer and a seed layer and to remove unnecessary parts of both layers, ensuring sufficient adhesiveness with a resin layer.

Example 1A

Preferred embodiments of the manufacture of the wiring board according to the first invention are described below.

As shown in Fig. 2A (a), a resin layer 10 made of epoxy or polyimide having a thickness of about 50 µm is prepared as an interlayer insulating film of a wiring board.

As shown in Fig. 2a (b), the surface of the resin was cleaned with an argon plasma of about 0.5 Pa and maintained under vacuum in a nickel-copper alloy having a specific composition ratio according to the present invention in an argon gas environment of about 0.5 Pa. The contact seed layer 20 formed is formed by sputtering. The contact seed layer 20 generally has a thickness of about 500 nm, and preferably 100 to 1000 nm thick in consideration of the case where convex portions are formed on the resin surface.

As shown in Fig. 2A (c), the plating resist pattern 16 is formed on the nickel-copper alloy adhesion seed layer 20 by photoresist coating, pattern exposure, and development.

As shown in Fig. 2A (d), electrolytic copper plating is performed using the nickel-copper alloy adhesion seed layer 20 as a feeding layer, and the nickel-copper exposed in the opening of the plating resist pattern 16 is shown. An electrolytic copper plating layer 18 having a thickness of about 20 μm is formed on the alloy adhesion seed layer 20.

As shown in Fig. 2A (e), the plating resist pattern 16 is peeled off.

As shown in FIG. 2A (f), an unnecessary portion of the nickel-copper alloy adhesion seed layer 20 exposed by the stripping removal of the plating resist pattern 16 is a sulfuric acid-based solution which is a copper etching solution. To remove it. Compared with the thickness of the nickel-copper alloy adhesion seed layer 20, the thickness of the electrolytic copper plating layer 18 is much larger. Therefore, there is no problem of disconnection due to etching. Therefore, the wiring layer 19 of the predetermined pattern comprised by the contact seed layer 20 of 20 micrometers / 20 micrometers, and the electrolytic copper plating layer 18 of a line and a space is completed. Finally, the insulation between the wiring patterns is checked to complete the wiring formation process.

According to the present embodiment, an adhesive seed layer, which serves as an adhesive layer and a seed layer, can be formed on the resin layer through one treatment, and unnecessary portions of both layers can be removed by one etching treatment, and at the same time, It is possible to secure excellent adhesion between the resin layer and the electrolytic copper plating wiring layer.

Example 1B

Another example of the preferred embodiment for the manufacture of the wiring board according to the first invention will be described.

As shown in Fig. 2B (a), a resin layer 10 made of epoxy or polyimide having a thickness of about 50 µm is prepared as an interlayer insulating film of a wiring board.

As shown in FIG. 2B (b), the surface of the resin is cleaned with an argon plasma of about 0.5 Pa, and is composed of a nickel-copper alloy having a composition ratio defined in the present invention in an argon gas environment of about 0.5 Pa while maintaining a vacuum. It forms by sputtering the contact seed layer 20 which becomes. The contact seed layer 20 generally has a thickness of about 500 nm, but considering the case where the surface of the resin layer is rough, the contact seed layer 20 having a thickness of about 100 to 1000 nm is preferable. The above-mentioned process is the same as Example 1A, and the following process is different.

As shown in FIG. 2B (c), electrolytic copper plating is performed using the nickel-copper alloy adhesion seed layer 20 as a feed layer, and has a thickness of about 20 μm on the nickel-copper alloy adhesion seed layer 20. An electrolytic copper plating layer 18 is formed.

As shown in Fig. 2B (d), the etching resist pattern 16 is formed through photoresist coating, pattern exposure, and development.

As shown in FIG. 2B (e), the electrolytic copper plating layer 18 exposed in the opening of the etching resist pattern 16 and the nickel-copper alloy adhesion seed layer 20 thereunder are collectively packaged with a sulfuric acid-based aqueous solution which is a copper etching solution. To remove it.

As shown in Fig. 2B (f), the etching resist pattern 16 is peeled off. Thereby, the wiring layer 19 of the predetermined pattern comprised typically by the contact | separated seed layer 20 of 20 micrometers / 20 micrometers of lines, and the electrolytic copper plating layer 18 is completed. Finally, the insulation between the wiring patterns is checked to complete the wiring formation process.

According to the above embodiment, the adhesion seed layer functioning as the adhesion layer and the seed layer on the resin layer can be formed through one process, and the adhesion seed layer and the electrolytic copper plating layer thereon are also subjected to one etching process. By patterning, the wiring layer which consists of these two layers can be formed, and it is possible to ensure the outstanding adhesiveness of a resin layer and a wiring layer at the same time.

In this embodiment, as shown in Fig. 2B (c), an electrolytic copper plating layer 18 having a thickness of about 20 mu m is formed. In place of the electrolytic copper plating layer, for example, a copper layer of about 2000 nm thickness may also be formed. This change does not change the other processes.

In this modified embodiment, the nickel-copper alloy adhesion seed layer 20 of FIG. 2B (b) and the copper layer 18 of FIG. 2B (c) may be formed in the same sputtering apparatus. This can simplify the entire wiring formation process.

Example 2

Preferred embodiments of the manufacture of the wiring board according to the second invention are described below.

As shown in Fig. 3A, a resin layer 10 made of epoxy or polyimide having a thickness of about 50 µm is prepared as an interlayer insulating film of a wiring board.

As shown in Fig. 3 (b), a metal layer made of a nickel-copper alloy having a composition ratio defined in the present invention in an argon gas environment of about 0.5 Pa while being cleaned with an argon plasma of about 0.5 Pa and maintained in vacuum. (25) is formed by sputtering. The thickness of the metal layer 25 is, for example, about 2000 nm.

As shown in FIG. 3C, the etching resist pattern 16 is formed on the metal layer 25 by photoresist coating, pattern exposure, and development.

As shown in FIG. 3 (d), a part of the metal layer 25 exposed by the etching resist pattern 16 is removed with a sulfuric acid-based aqueous solution that is a copper etching solution.

As shown in Fig. 3E, the etching resist pattern 16 is peeled off. Subsequently, the wiring layer 26 of the predetermined pattern comprised by the nickel-copper alloy 25 of 20 micrometers / 20 micrometers of lines and a space | interval is completed. Finally, the insulation between the wiring patterns is checked to complete the wiring formation process.

According to the above embodiment, it is possible to directly form a wiring layer made of a nickel-copper alloy on which the separate adhesion layer and the seed layer are not required, on the resin layer. In this way, excellent adhesion between the resin layer and the wiring layer can be ensured while greatly simplifying the wiring board manufacturing process.

[Yes]

In the method according to the first embodiment, a nickel-copper alloy adhesion seed layer having a composition ratio varied on the resin layer is formed, and an electrolytic copper wiring layer is formed thereon to measure peel strength. Metrology samples are generated in steps (1) to (5) below.

(1) An epoxy resin having a thickness of about 50 μm is laminated as an interlayer insulating film on a printed circuit board on which a copper foil is pressed.

(2) The surface of the resin is cleaned in an argon gas plasma of about 0.5 Pa.

(3) A nickel-copper alloy film (adhesive seed layer) having a thickness of 500 nm was formed by sputtering in an argon gas environment of about 0.5 Pa while maintaining the vacuum in step (2).

(4) An electrolytic copper plating film is formed on the nickel-copper alloy film with a thickness of 20 µm.

(5) An etching resist pattern was formed on the nickel-copper alloy film by photoresist coating, pattern exposure, and development using sodium carbonate solution, the nickel-copper alloy film was etched, and the etching resist pattern was peeled off to remove 1 cm in width. A wiring layer composed of an electrolytic copper plating film is formed.

Next, the peel strength test of the wiring layer obtained above is performed.

In this test, the substrate is fixed to the stage of a tension test apparatus, the electrolytic copper plating film (wiring layer) having a width of 1 cm is pulled in the vertical direction, and the tension when peeling from the resin layer is measured by peel strength. .

4 shows the relationship between the nickel content and the peel strength of the nickel-copper alloy film (adhesive seed layer). The state of 100 wt% nickel content shown at the right end of FIG. 4 corresponds to the case of the conventional nickel adhesion layer / copper seed layer.

As shown in Fig. 4, the peel strength of 0.70 to 0.77 kgf / cm is obtained when the nickel content is 20 wt% or more. This value is excellent in the case where a conventional nickel adhesion layer / copper seed layer is used. When the peeling mode is observed, when the nickel content is 20 wt% or less, peeling occurs at the interface between the electrolytic copper plating film and the nickel-copper alloy film. In this case the peeling is small. On the other hand, in the case where the nickel content is 20 wt% or more, peeling is entirely caused by coagulation and peeling in the resin layer, and the peel strength is determined by the breaking strength of the resin layer itself. Therefore, high peel strength can be obtained stably. The peeling mode is the same as that in the case where a conventional nickel adhesion layer / copper seed layer is used.

When the nickel content exceeds 75 wt%, it becomes difficult to perform etching using a sulfuric acid-based aqueous solution that is a copper etching solution. Therefore, it is preferable to make nickel content into about 20-75 wt%.

In addition, in this invention, the material of a resin layer is not limited to an epoxy or a polyimide.

According to the present invention, there is no need for a complicated process of forming an adhesion layer and a seed layer on the resin layer and removing unnecessary portions of both layers, and a wiring board which ensures excellent adhesion with the resin layer and a method of manufacturing the same. It becomes possible to provide.

In particular, in the case of the first invention, an adhesion seed layer functioning as an adhesion layer and a seed layer on the resin layer is formed in one process, and unnecessary portions of both layers are also removed in one etching process, and at the same time It is possible to secure excellent adhesion between the resin layer and the electrolytic copper plating wiring layer.

In addition, in the case of the second invention, it is possible to form a wiring layer made of a nickel-copper alloy directly on the resin layer without requiring an adhesion layer and a seed layer separately. Thus, it is possible to secure excellent adhesion between the resin layer and the wiring layer while greatly simplifying the wiring board manufacturing process.

1 is a cross-sectional view representatively showing a method of forming an electrolytic copper plating wiring layer using a conventional nickel adhesion layer / copper seed layer.

2A is a representative cross-sectional view showing a method of forming a wiring layer made by forming a nickel-copper alloy adhesion seed layer and an electrolytic copper plating layer thereon on a resin layer according to an embodiment of the first invention;

Figure 2b is a representative cross-sectional view showing a method for forming a wiring layer made by forming a nickel-copper alloy adhesion seed layer and an electrolytic copper plating layer thereon on a resin layer according to another embodiment of the first invention.

3 is a representative cross-sectional view showing a method of directly forming a nickel-copper alloy wiring layer on a resin layer according to the second invention.

4 is a graph showing the relationship between the nickel content of the nickel-copper alloy adhesion seed layer and the peel strength of the electrolytic copper plating wiring layer of the first invention.

 * Description of the symbols for the main parts of the drawings *

10: resin layer (interlayer insulation film)

12: Ni adhesion layer

14: Cu seed layer

16: photoresist pattern

17: wiring layer

18: electrolytic Cu plating layer

19: wiring layer

20: Ni-Cu alloy adhesion seed layer

25: metal layer of Ni-Cu alloy

26: wiring layer

Claims (5)

As a wiring board, Resin insulating layer; A nickel-copper alloy adhesion seed layer composed of 20 to 75 wt% nickel and the remaining copper formed on the resin insulating layer; And, And a copper wiring layer made of copper formed on the nickel copper alloy adhesion seed layer. As a method of manufacturing the wiring board of claim 1, Forming a nickel-copper alloy adhesion seed layer on the entire surface of the region where the wiring layer on the resin insulating layer is to be formed; Forming a plating resist pattern on the adhesion seed layer; Forming a copper wiring layer by electroplating in the opening of the plating resist pattern using the close seed layer as a feed layer; Removing the plating resist pattern; And, Removing the contact seed layer in the exposed portion by removal of the plating resist pattern. As a method of manufacturing the wiring board of claim 1, Forming a nickel-copper alloy adhesion seed layer on the entire surface of the region where the wiring layer on the resin insulating layer is to be formed; Forming a copper wiring layer on an entire surface of the contact seed layer; Forming an etching resist pattern on the copper wiring layer; Forming a wiring layer by patterning all at once by etching the copper wiring layer and the close seed layer below using the etching resist pattern as a mask; And, Removing the etching resist pattern. A wiring board comprising a resin insulating layer and a wiring layer thereon, The wiring layer is a wiring board, characterized in that consisting of 20 to 75 wt% nickel and the remaining copper over the entire thickness. In the method of manufacturing the wiring board of claim 4, Forming a metal layer of a nickel-copper alloy on the entire surface of the region where the wiring layer is to be formed on the resin insulating layer; Forming an etching resist pattern on the metal layer; Using the etching resist pattern as a mask, patterning a metal layer of the nickel-copper alloy by etching to form a wiring layer; And, Removing the etching resist pattern.
KR1020080028198A 2007-04-02 2008-03-27 Wiring board and method of manufacturing the same KR20080090285A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007096527 2007-04-02
JPJP-P-2007-00096527 2007-04-02
JP2008026597A JP2008277749A (en) 2007-04-02 2008-02-06 Wiring board and its manufacturing method
JPJP-P-2008-00026597 2008-02-06

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CN (1) CN101282620A (en)
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WO2010147059A1 (en) * 2009-06-18 2010-12-23 Jx日鉱日石金属株式会社 Electronic circuit, method for forming same, and copper-clad laminate for electronic circuit formation
KR101194461B1 (en) 2011-09-22 2012-10-24 삼성전기주식회사 Printed circuit board and method for manufacturing the same
JP2013084987A (en) * 2013-01-10 2013-05-09 Denso Corp Manufacturing method of wiring board
KR20160080526A (en) * 2014-12-29 2016-07-08 삼성전기주식회사 Printed circuit board and method of manufacturing the same
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JP2879746B2 (en) * 1989-11-07 1999-04-05 カシオ計算機株式会社 Semiconductor panel
JPH03155134A (en) * 1989-11-13 1991-07-03 Seiko Epson Corp Wiring electrode of integrated circuit
JP2004243701A (en) * 2003-02-14 2004-09-02 Toyo Kohan Co Ltd Alloy layer laminate and part using the same
JP2005129899A (en) * 2003-08-28 2005-05-19 Kyocera Corp Wiring board and semiconductor device
JP4817733B2 (en) * 2005-07-06 2011-11-16 富士通株式会社 Metal surface treatment liquid, laminate and method for producing laminate

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CN111096086A (en) * 2017-09-18 2020-05-01 阿莫绿色技术有限公司 Thin film circuit board and method for manufacturing the same
US11543748B2 (en) 2017-09-18 2023-01-03 Amogreentech Co., Ltd. Thin film circuit substrate and manufacturing method thereof
CN111096086B (en) * 2017-09-18 2023-05-02 阿莫绿色技术有限公司 Thin film circuit board and method for manufacturing same

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