KR20080082112A - Method for fabricating light emitting diode and structure of package substrate - Google Patents
Method for fabricating light emitting diode and structure of package substrate Download PDFInfo
- Publication number
- KR20080082112A KR20080082112A KR1020070022495A KR20070022495A KR20080082112A KR 20080082112 A KR20080082112 A KR 20080082112A KR 1020070022495 A KR1020070022495 A KR 1020070022495A KR 20070022495 A KR20070022495 A KR 20070022495A KR 20080082112 A KR20080082112 A KR 20080082112A
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- KR
- South Korea
- Prior art keywords
- lead frame
- lens
- mold
- diode chip
- hole
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
Abstract
The present invention relates to a light emitting diode manufacturing method for forming a lens using a mold and a structure of a lead frame, and preparing a mold to have a lens-shaped lens forming portion, the mold to inject a transparent mold material into the lens forming portion Alternatively, grooves or holes are formed in the lead frame to align the mold and the lead frame on which the diode chip is mounted to inject a transparent mold material through the grooves or holes to simultaneously form the molding part and the lens.
Description
1 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to the prior art.
Figure 2 is for explaining the structure of the mold according to the first embodiment of the present invention, Figure 2a is a plan view of the mold, Figure 2b is a side view
3 is a structural cross-sectional view of a lead frame on which a chip according to a first embodiment of the present invention is mounted;
4 is a cross-sectional view for describing a method of forming a molding part and a lens according to a first exemplary embodiment of the present invention.
5 is a perspective view of a lead frame according to a second embodiment of the present invention;
6 is a cross-sectional view of a state in which a lead frame and a mold are coupled according to a second embodiment of the present invention;
7 is a cross-sectional view of a state in which a lead frame and a mold are coupled according to a third embodiment of the present invention.
8 is a rear view of a lead frame according to a fourth embodiment of the present invention.
9 is a cross-sectional view of a state in which a lead frame and a mold are coupled according to a fourth embodiment of the present invention;
10A to 10C are structural cross-sectional views of through holes according to third and fourth embodiments of the present invention.
*** Explanation of symbols on main parts of drawing ***
10, 35: mold 11: lens forming portion
12, 13, 29a, 29b: injection groove or vent groove
21, 31:
23, 33: light
25, 42:
27, 40:
14a, 14b, 37a, 37b: through hole 39: nozzle
The present invention relates to a method of manufacturing a light emitting device, and to a light emitting diode manufacturing method for forming a lens using a mold and a structure of a lead frame therefor.
In general, light emitting diodes (LEDs) have excellent monochromatic peak wavelength, have excellent light efficiency, and can be miniaturized, and thus are widely used as various display devices, mobile phones, and landscape lighting. Recently, white light emitting diodes have been actively developed as high-output, high-efficiency light sources capable of coping with backlights of lighting devices or liquid crystal display devices.
Such a light emitting diode should have excellent light extraction characteristics, and attach a lens to the light emitting surface in order to have excellent light extraction characteristics.
Referring to the accompanying drawings, a conventional method for manufacturing a light emitting diode is as follows.
1 is a cross-sectional view for explaining a method of manufacturing a conventional light emitting device.
The conventional method of manufacturing a light emitting diode has a heat metal (7) on a lead frame (2) with a lead metal (1) and a lead electrode (1) for dissipating heat generated from a diode chip with a protrusion on its top surface. The diode chip 3 is mounted on the protruding portion thereof.
The electrode of the diode chip 3 and the
A molding part 5 is formed on the
Then, in order to improve the light extraction characteristic, the
However, such a conventional method of manufacturing a light emitting diode has the following problems.
That is, in order to improve the light extraction characteristics, the lens made by the injection mold is attached onto the molding part of the lead frame using an adhesive sheet, so that the process is large and the productivity is lowered, and the lens forming cost is high.
In addition, since the lens made by the injection mold is attached to the molding part using an adhesive sheet, during the attaching process, foreign matter is inserted or scratches are generated on the surface of the lens, thereby deteriorating light extraction characteristics.
The present invention has been made to solve the problems of the prior art as described above, to prepare a mold having a lens-shaped lens forming portion, and to be injected into the mold or lead frame to inject a transparent mold material into the lens forming portion / A light emitting device capable of simultaneously forming a molding part and a lens by forming a vent groove or an injection / vent hole to align the lead frame in which the mold and the diode chip are mounted to inject a transparent mold material through the injection groove or the injection hole. It is an object of the present invention to provide a method of manufacturing a and a structure of a lead frame for manufacturing the light emitting device.
Method of manufacturing a light emitting device according to the present invention for achieving the above object comprises the steps of preparing a mold having a lens-shaped lens forming portion and the injection groove formed in the lens forming portion; Mounting a diode chip on a lead frame; Aligning and coupling the mold and the lead frame such that the diode chip and the lens forming unit face each other and the diode chip is positioned at the center of the lens forming unit; And forming a molding part and a lens for molding the diode chip by injecting silicon or epoxy through the injection groove at the same time.
In addition, the manufacturing method of the light emitting device according to the present invention for achieving the above object comprises the steps of preparing a mold having a lens-shaped lens forming portion; Preparing a lead frame having at least one injection groove formed therein; Mounting a diode chip on the lead frame; Aligning and coupling the mold and the lead frame such that the diode chip and the lens forming unit face each other and the remaining portions except the injection groove are sealed to each other; And forming a molding part and a lens for molding the diode chip by injecting silicon or epoxy through the injection groove at the same time.
In addition, the manufacturing method of the light emitting device according to the present invention for achieving the above object comprises the steps of preparing a lead frame formed with at least one injection groove; Preparing a mold having at least one through hole in a lens-shaped lens forming portion and a portion corresponding to the injection groove; Mounting a diode chip on the lead frame; Aligning and coupling the mold and the lead frame such that the diode chip and the lens forming unit face each other, the through hole and the injection groove correspond to each other, and the remaining portions except the injection groove are sealed to each other; And forming a molding part and a lens for molding the diode chip by injecting silicon or epoxy through the through hole and the injection groove at the same time.
In addition, the manufacturing method of the light emitting device according to the present invention for achieving the above object comprises the steps of preparing a mold having a lens-shaped lens forming portion; Forming at least one through hole on the lead frame; Mounting a diode chip on the lead frame; Aligning and coupling the mold and the lead frame such that the diode chip and the lens forming unit face each other and the through hole is positioned in the lens forming unit; In addition, there is another feature, including the step of forming a molding unit and a lens for molding the diode chip by injecting silicon or epoxy through the through-hole at the same time.
On the other hand, the lead frame according to the present invention for achieving the above object, has a protrusion to the top surface for dissipating heat generated from the diode chip; Lead electrodes; A body fixing the heat metal and the lead electrode; And it is characterized by having at least one through-hole.
In addition, the lead frame according to the present invention for achieving the above object, has a protrusion to the upper surface for dissipating heat generated from the diode chip; a lead electrode; A body fixing the heat metal and the lead electrode; And it is another feature that is configured with at least one injection groove formed in the body.
The method of manufacturing the light emitting device according to the present invention having the above characteristics and the structure of a lead frame for manufacturing the light emitting device will be described in more detail with reference to the accompanying drawings.
First embodiment
Figure 2 is for explaining the structure of the mold according to the first embodiment of the present invention, Figure 2a is a plan view of the mold, Figure 2b is a side view. 3 is a structural cross-sectional view of a lead frame on which a chip according to a first embodiment of the present invention is mounted. 4 is a cross-sectional view for describing a method of forming a molding part and a lens according to a first exemplary embodiment of the present invention.
As shown in Figs. 2A to 2B, a
That is, in the
Here, the
Then, the
That is, as shown in Figure 3, the
The
The
More specifically, as shown in FIG. 4, the
At this time, the
By combining as described above, the
At this time, the epoxy or silicon may be mixed with at least one of a phosphor or a light dispersant.
Second embodiment
In the method of manufacturing the light emitting device according to the second embodiment of the present invention, in the first embodiment of the present invention, the injection groove or the vent hole is formed in the lead frame without forming the injection groove in the mold. After preparing a mold having an injection groove for injecting epoxy or silicon into the lead frame, the lead frame and the mold are aligned and joined so that the end of the injection groove is exposed to the outside, and then epoxy or through the injection groove. Injecting silicon to form a lens at the same time as the molding portion. This will be described in detail as follows.
5 is a perspective view of a lead frame according to a second embodiment of the present invention, and FIG. 6 is a cross-sectional view of a lead frame and a mold according to a second embodiment of the present invention.
As shown in FIGS. 5 and 6, a
In addition, a
The
The
More specifically, as shown in FIG. 6, the
At this time, the
In this way, the nozzle is inserted into the
At this time, the epoxy or silicon may be mixed with at least one of a phosphor or a light dispersant.
Third embodiment
In the method of manufacturing a light emitting device according to the third embodiment of the present invention, in the second embodiment of the present invention, a through hole is further formed in the mold to be aligned with the injection groove, such that the through hole and the injection groove are aligned. After aligning and combining the lead frame and the metal mold, the nozzle is inserted into the injection groove through the through hole to inject epoxy or silicon to form a lens simultaneously with the molding part. This will be described in detail as follows.
7 is a cross-sectional view of a state in which a lead frame and a mold are coupled according to a third embodiment of the present invention.
The structure of the lead frame according to the third embodiment of the present invention is the same as that of FIGS. 5 and 6 described in the second embodiment of the present invention. Therefore, the description of the structure of the lead frame according to the third embodiment of the present invention will be omitted.
As shown in FIG. 7, through-
The
More specifically, as shown in FIG. 7, the
At this time, the
In this way, the nozzle is inserted into the
At this time, the epoxy or silicon may be mixed with at least one of a phosphor or a light dispersant.
In the third embodiment of the present invention as described above, the nozzle is not inserted into the
Fourth embodiment
In the method of manufacturing a light emitting device according to a fourth embodiment of the present invention, a mold having a lens-shaped lens forming portion is prepared, a through hole for injecting epoxy or silicon into a lead frame is formed to align and combine the lead frame and the mold. Thereafter, a lens is formed at the same time as the molding part by injecting epoxy or silicon through the through hole from the rear side of the lead frame. This will be described in detail as follows.
FIG. 8 is a rear view of a lead frame according to a fourth embodiment of the present invention, and FIG. 9 is a cross-sectional view of a lead frame and a mold according to a fourth embodiment of the present invention.
As shown in FIGS. 8 and 9, a
At least one through
In addition, the position at which the through-hole is formed is not specified to any particular portion, and any portion can be used as long as it is not difficult to work.
Then, the diode chip 33 is mounted on the protruding and floating of the
On the other hand, the metal mold | die 35 which has a lens-shaped lens formation part is prepared. In addition, the
At this time, there is no significant effect on the position of the
As described above, the
Then, the
In the above, according to the product characteristics of the light emitting device, the lens-shaped lens forming portion may be formed in an oval, circular or polygonal shape, various shapes (round, square, triangle, etc.) on the inner surface of the lens forming portion, that is, the lens surface Irregularities can be formed.
In the third and fourth embodiments of the present invention, the cross-sectional structure of the through hole will be described in more detail as follows.
10A through 10C are structural cross-sectional views of through holes according to third and fourth embodiments of the present invention.
As shown in Figs. 10A to 10C, the structure of the through hole of the present invention is smaller than the radius of the through
The reason is to prevent the epoxy or silicon from protruding from the back of the
This structure is also applied to the through
That is, the surface portion of the back surface of the
In the first to fourth embodiments of the present invention, only the injection type lead frame is illustrated and described. However, the present invention is not limited thereto and may be applied to both a lead frame of a PCB type including a metal or a lead frame of a COB type. Since the structure of the lead frame of the PCB type or the lead frame of the COB type is a well known structure, its configuration is not shown.
As described above, the method of manufacturing the light emitting device and the structure of the lead frame according to the present invention have the following effects.
First, since the molding part and the lens are formed at the same time using a mold, process time can be shortened and productivity can be improved.
Secondly, since the molding part and the lens are formed at the same time by using a mold, it is possible to prevent foreign matter from being inserted into the lens or a scratch on the lens surface during the process, thereby increasing the light extraction efficiency of the light emitting device.
Claims (19)
Priority Applications (1)
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KR1020070022495A KR100887598B1 (en) | 2007-03-07 | 2007-03-07 | Method for fabricating light emitting diode and structure of package substrate |
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KR1020070022495A KR100887598B1 (en) | 2007-03-07 | 2007-03-07 | Method for fabricating light emitting diode and structure of package substrate |
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KR100887598B1 KR100887598B1 (en) | 2009-03-10 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20130075309A (en) * | 2011-12-27 | 2013-07-05 | 엘지이노텍 주식회사 | Light emitting device array |
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KR101547548B1 (en) * | 2013-12-26 | 2015-08-26 | 주식회사 루멘스 | Phosphor encapsulation type light emitting device package, backlight unit, illumination device and its manufacturing method |
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JP2005223216A (en) * | 2004-02-06 | 2005-08-18 | Matsushita Electric Ind Co Ltd | Light emitting light source, illuminator, and display unit |
KR100784057B1 (en) * | 2005-06-24 | 2007-12-10 | 엘지이노텍 주식회사 | Light emitting device package and mauufacture method of light emitting device package |
KR100757196B1 (en) * | 2005-08-01 | 2007-09-07 | 서울반도체 주식회사 | Light emitting device with a lens of silicone |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20130075309A (en) * | 2011-12-27 | 2013-07-05 | 엘지이노텍 주식회사 | Light emitting device array |
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