KR20080058341A - 낮은 밀러 용량 및 향상된 구동 전류를 위한 단일 게이트상의 다중 저유전율 및 고유전율 게이트 산화막 - Google Patents

낮은 밀러 용량 및 향상된 구동 전류를 위한 단일 게이트상의 다중 저유전율 및 고유전율 게이트 산화막 Download PDF

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Publication number
KR20080058341A
KR20080058341A KR1020087006660A KR20087006660A KR20080058341A KR 20080058341 A KR20080058341 A KR 20080058341A KR 1020087006660 A KR1020087006660 A KR 1020087006660A KR 20087006660 A KR20087006660 A KR 20087006660A KR 20080058341 A KR20080058341 A KR 20080058341A
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South Korea
Prior art keywords
oxide film
gate
dielectric constant
gate oxide
containing material
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Ceased
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KR1020087006660A
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English (en)
Korean (ko)
Inventor
듀어세티 치담바라오
오머 도쿠마치
올레그 글루셴코프
마이클 벨리안스키
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인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20080058341A publication Critical patent/KR20080058341A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/018—Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020087006660A 2005-09-22 2006-09-22 낮은 밀러 용량 및 향상된 구동 전류를 위한 단일 게이트상의 다중 저유전율 및 고유전율 게이트 산화막 Ceased KR20080058341A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/162,778 2005-09-22
US11/162,778 US20070063277A1 (en) 2005-09-22 2005-09-22 Multiple low and high k gate oxides on single gate for lower miller capacitance and improved drive current

Publications (1)

Publication Number Publication Date
KR20080058341A true KR20080058341A (ko) 2008-06-25

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KR1020087006660A Ceased KR20080058341A (ko) 2005-09-22 2006-09-22 낮은 밀러 용량 및 향상된 구동 전류를 위한 단일 게이트상의 다중 저유전율 및 고유전율 게이트 산화막

Country Status (7)

Country Link
US (1) US20070063277A1 (https=)
EP (1) EP1927128A4 (https=)
JP (1) JP2009509359A (https=)
KR (1) KR20080058341A (https=)
CN (1) CN101268543A (https=)
TW (1) TW200713456A (https=)
WO (1) WO2007038237A2 (https=)

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WO2007038237A3 (en) 2007-07-26
US20070063277A1 (en) 2007-03-22
JP2009509359A (ja) 2009-03-05
EP1927128A2 (en) 2008-06-04
CN101268543A (zh) 2008-09-17
TW200713456A (en) 2007-04-01
EP1927128A4 (en) 2009-01-28
WO2007038237A2 (en) 2007-04-05

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