KR20070097558A - 펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스 - Google Patents

펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스 Download PDF

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Publication number
KR20070097558A
KR20070097558A KR1020077017554A KR20077017554A KR20070097558A KR 20070097558 A KR20070097558 A KR 20070097558A KR 1020077017554 A KR1020077017554 A KR 1020077017554A KR 20077017554 A KR20077017554 A KR 20077017554A KR 20070097558 A KR20070097558 A KR 20070097558A
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KR
South Korea
Prior art keywords
plasma
duty cycle
limiting
oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020077017554A
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English (en)
Korean (ko)
Inventor
타이 쳉 추아
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20070097558A publication Critical patent/KR20070097558A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077017554A 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스 Abandoned KR20070097558A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/050,471 2005-02-02
US11/050,471 US7141514B2 (en) 2005-02-02 2005-02-02 Selective plasma re-oxidation process using pulsed RF source power

Publications (1)

Publication Number Publication Date
KR20070097558A true KR20070097558A (ko) 2007-10-04

Family

ID=36757157

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017554A Abandoned KR20070097558A (ko) 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스

Country Status (5)

Country Link
US (1) US7141514B2 (https=)
EP (1) EP1851795A4 (https=)
JP (1) JP5172352B2 (https=)
KR (1) KR20070097558A (https=)
WO (1) WO2006083778A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
KR100951559B1 (ko) * 2007-01-03 2010-04-09 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
US8236706B2 (en) * 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
KR101893471B1 (ko) * 2011-02-15 2018-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티존 플라즈마 생성을 위한 방법 및 장치
KR102028779B1 (ko) 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
KR101994820B1 (ko) * 2012-07-26 2019-07-02 에스케이하이닉스 주식회사 실리콘함유막과 금속함유막이 적층된 반도체 구조물 및 그의 제조 방법
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500563A (en) 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
US5872052A (en) * 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
JP3411559B2 (ja) 1997-07-28 2003-06-03 マサチューセッツ・インスティチュート・オブ・テクノロジー シリコーン膜の熱分解化学蒸着法
JP3141827B2 (ja) 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6355580B1 (en) * 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
JP3505493B2 (ja) * 1999-09-16 2004-03-08 松下電器産業株式会社 半導体装置の製造方法
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
US6458714B1 (en) * 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
JP2002245777A (ja) * 2001-02-20 2002-08-30 Hitachi Ltd 半導体装置
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
JP2005530341A (ja) * 2002-06-12 2005-10-06 アプライド　マテリアルズ　インコーポレイテッド 基板を処理するためのプラズマ方法及び装置
US20040137243A1 (en) 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
JP2004200550A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP1851795A4 (en) 2009-06-17
EP1851795A2 (en) 2007-11-07
JP5172352B2 (ja) 2013-03-27
US20060172550A1 (en) 2006-08-03
US7141514B2 (en) 2006-11-28
WO2006083778A3 (en) 2006-11-09
WO2006083778A2 (en) 2006-08-10
JP2008529314A (ja) 2008-07-31

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