KR20070083943A - 메모리 셀 관리 방법 및 메모리 장치 - Google Patents
메모리 셀 관리 방법 및 메모리 장치 Download PDFInfo
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- KR20070083943A KR20070083943A KR1020077010084A KR20077010084A KR20070083943A KR 20070083943 A KR20070083943 A KR 20070083943A KR 1020077010084 A KR1020077010084 A KR 1020077010084A KR 20077010084 A KR20077010084 A KR 20077010084A KR 20070083943 A KR20070083943 A KR 20070083943A
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- memory cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
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Abstract
Description
Claims (21)
- 복수의 메모리 셀을 관리하는 방법에 있어서,(a) 복수의 메모리 셀 중 적어도 하나의 환경 변수(environmental parameter)의 각 값을 획득하는 단계와,(b) 상기 적어도 하나의 획득된 값에 따라 상기 복수의 메모리 셀의 적어도 하나의 기준 전압의 각 값을 조정하는 단계를 포함하는 메모리 셀 관리 방법.
- 제 1 항에 있어서,상기 적어도 하나의 환경 변수는 적어도 하나의 이력 변수(historical parameter)를 포함하는메모리 셀 관리 방법.
- 제 2 항에 있어서,상기 적어도 하나의 이력 변수는 상기 복수의 메모리 셀의 프로그램 소거 사이클의 수를 포함하는메모리 셀 관리 방법.
- 제 2 항에 있어서,상기 적어도 하나의 이력 변수는 상기 복수의 메모리 셀의 데이터 보존 시간을 포함하는메모리 셀 관리 방법.
- 제 1 항에 있어서,상기 적어도 하나의 환경 변수는 상기 복수의 메모리 셀의 온도를 포함하는메모리 셀 관리 방법.
- 제 1 항에 있어서,상기 적어도 하나의 기준 전압은 판독 기준 전압을 포함하는메모리 셀 관리 방법.
- 제 1 항에 있어서,상기 적어도 하나의 기준 전압은 프로그램 확인 기준 전압을 포함하는메모리 셀 관리 방법.
- 제 1 항에 있어서,상기 조정은 복수의 상기 기준 전압의 각 값의 조정이고, 상기 복수의 상기 기준 전압은 각각의 임계 전압 밴드의 복수의 상기 기준 전압을 포함하며, 각각의 상기 기준 전압의 상기 각 값을 조정하는 단계는 상기 각각의 상기 기준 전압의 상 기 각각의 임계 전압 밴드에 특유한 방식으로 행해지는메모리 셀 관리 방법.
- 메모리 장치에 있어서,(a) 복수의 메모리 셀과,(b) (i) 상기 복수의 메모리 셀의 적어도 하나의 환경 변수의 각 값을 획득하고,(ii) 적어도 하나의 획득된 값에 따라 상기 복수의 메모리 셀의 적어도 하나의 기준 전압의 각 값을 조정함으로써,상기 복수의 메모리 셀을 관리하도록 동작하는 제어기를 포함하는 메모리 장치.
- 복수의 메모리 셀을 관리하는 방법에 있어서,(a) 상기 복수의 메모리 셀의 기준 전압의 단일의 각 기준 변수에 대해 상기 메모리 셀 중 적어도 일부의 통계치 측정 단계와,(b) 측정된 통계치에 따라 상기 기준 전압의 각 값을 조정하는 단계를 포함하는 메모리 셀 관리 방법.
- 제 10 항에 있어서,상기 기준 전압은 판독 기준 전압인메모리 셀 관리 방법.
- 제 10 항에 있어서,상기 기준 전압은 프로그램 확인 기준 전압인메모리 셀 관리 방법.
- 제 10 항에 있어서,상기 통계치는 상기 적어도 일부 셀의 임계 전압의 통계치이고, 상기 기준 변수는 상기 기준 전압의 대응하는 최초 분포의 특성과 관련되는메모리 셀 관리 방법.
- 제 13 항에 있어서,상기 특성은 상기 최초 분포의 하한인메모리 셀 관리 방법.
- 제 13 항에 있어서,상기 특성은 상기 최초 분포의 중간(median)인메모리 셀 관리 방법.
- 제 10 항에 있어서,(c) 데이터를 저장하도록 상기 메모리 셀을 프로그래밍하는 단계를 더 포함하는메모리 셀 관리 방법.
- 제 16 항에 있어서,상기 측정은 사전에 정해진 대기 시간만큼 상기 프로그래밍에 대해 지연되는메모리 셀 관리 방법.
- 제 16 항에 있어서,(d) 상기 데이터에 따라서 적어도 일부의 셀 선택 단계를 더 포함하는메모리 셀 관리 방법.
- 제 18 항에 있어서,상기 선택 단계는 상기 셀로부터의 상기 데이터 판독 단계를 포함하고, 상기 판독 단계 및 상기 측정 단계는 상기 적어도 일부의 셀을 선택하도록 반복되는메모리 셀 관리 방법.
- 제 10 항에 있어서,상기 통계치는 모든 상기 셀에 대해 측정되는메모리 셀 관리 방법.
- 메모리 장치에 있어서,(a) 복수의 메모리 셀과,(b) (i) 상기 복수의 메모리 셀의 기준 전압의 단일의 각 기준 변수에 대해 상기 메모리 셀 중 적어도 일부의 통계치를 측정하고,(ii) 측정된 통계치에 따라 상기 기준 전압의 각 값을 조정함으로써,상기 복수의 메모리 셀을 관리하도록 동작하는 제어기를 포함하는 메모리 장치.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US62423304P | 2004-11-03 | 2004-11-03 | |
US62423404P | 2004-11-03 | 2004-11-03 | |
US60/624,234 | 2004-11-03 | ||
US60/624,233 | 2004-11-03 | ||
US11/206,033 US7817469B2 (en) | 2004-07-26 | 2005-08-18 | Drift compensation in a flash memory |
US11/206,033 | 2005-08-18 |
Publications (2)
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KR20070083943A true KR20070083943A (ko) | 2007-08-24 |
KR100946431B1 KR100946431B1 (ko) | 2010-03-10 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020077010084A KR100946431B1 (ko) | 2004-11-03 | 2005-10-26 | 메모리 셀 관리 방법 및 메모리 장치 |
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US (1) | US7817469B2 (ko) |
KR (1) | KR100946431B1 (ko) |
WO (1) | WO2006048860A2 (ko) |
Cited By (3)
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KR20150130632A (ko) * | 2014-05-13 | 2015-11-24 | 삼성전자주식회사 | 스토리지 장치, 스토리지 장치의 동작 방법, 그리고 스토리지 장치를 액세스하는 액세스 방법 |
KR102088945B1 (ko) * | 2019-10-11 | 2020-04-24 | 주식회사 파두 | 메모리 컨트롤러 및 이를 포함하는 스토리지 디바이스 |
KR102088944B1 (ko) * | 2019-10-01 | 2020-05-26 | 주식회사 파두 | 메모리 컨트롤러 및 이를 포함하는 스토리지 디바이스 |
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US7817469B2 (en) | 2010-10-19 |
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