KR20070039600A - 광 보호 수단을 포함하는 칩 및 그 제조 방법 - Google Patents

광 보호 수단을 포함하는 칩 및 그 제조 방법 Download PDF

Info

Publication number
KR20070039600A
KR20070039600A KR1020077004316A KR20077004316A KR20070039600A KR 20070039600 A KR20070039600 A KR 20070039600A KR 1020077004316 A KR1020077004316 A KR 1020077004316A KR 20077004316 A KR20077004316 A KR 20077004316A KR 20070039600 A KR20070039600 A KR 20070039600A
Authority
KR
South Korea
Prior art keywords
chip
integrated circuit
dielectric
mirror coating
dielectric mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077004316A
Other languages
English (en)
Korean (ko)
Inventor
크리스티안 젠즈
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20070039600A publication Critical patent/KR20070039600A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/40Arrangements for protection of devices protecting against tampering, e.g. unauthorised inspection or reverse engineering

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
KR1020077004316A 2004-07-26 2005-07-20 광 보호 수단을 포함하는 칩 및 그 제조 방법 Withdrawn KR20070039600A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103562 2004-07-26
EP04103562.7 2004-07-26

Publications (1)

Publication Number Publication Date
KR20070039600A true KR20070039600A (ko) 2007-04-12

Family

ID=35423325

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077004316A Withdrawn KR20070039600A (ko) 2004-07-26 2005-07-20 광 보호 수단을 포함하는 칩 및 그 제조 방법

Country Status (6)

Country Link
US (1) US20080093712A1 (https=)
EP (1) EP1774592A1 (https=)
JP (1) JP2008507851A (https=)
KR (1) KR20070039600A (https=)
CN (1) CN101027774B (https=)
WO (1) WO2006013507A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230852B2 (en) 2013-02-25 2016-01-05 Texas Instruments Incorporated Integrated circuit (IC) having electrically conductive corrosion protecting cap over bond pads
DE102014100469A1 (de) * 2013-11-29 2015-06-03 Epcos Ag Elektronisches Bauelement und Verwendung desselben
US9697455B2 (en) * 2014-12-26 2017-07-04 Avery Dennison Retail Information Services, Llc Using reactive coupling of a printed RFID chip on a strap to allow the printed material to be over-laminated with a barrier film against oxygen and moisture ingress
EP3353125B1 (en) 2015-09-25 2023-09-20 Materion Corporation High optical power light conversion device using an optoceramic phosphor element with solder attachment
US11610846B2 (en) 2019-04-12 2023-03-21 Adeia Semiconductor Bonding Technologies Inc. Protective elements for bonded structures including an obstructive element
US11373963B2 (en) 2019-04-12 2022-06-28 Invensas Bonding Technologies, Inc. Protective elements for bonded structures
US11205625B2 (en) 2019-04-12 2021-12-21 Invensas Bonding Technologies, Inc. Wafer-level bonding of obstructive elements
US11385278B2 (en) 2019-05-23 2022-07-12 Invensas Bonding Technologies, Inc. Security circuitry for bonded structures
WO2021196039A1 (zh) * 2020-03-31 2021-10-07 深圳市汇顶科技股份有限公司 安全芯片、安全芯片的制造方法和电子设备
US12278255B2 (en) * 2021-06-11 2025-04-15 Raytheon Company Thin film obscurant for microelectronics
JP2024530539A (ja) * 2021-07-16 2024-08-22 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 接合構造のための光学的妨害保護素子
KR20240036698A (ko) 2021-08-02 2024-03-20 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 결합 구조체를 위한 보호 반도체 소자

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2228298B1 (https=) * 1973-05-03 1978-01-06 Ibm
US5468990A (en) * 1993-07-22 1995-11-21 National Semiconductor Corp. Structures for preventing reverse engineering of integrated circuits
JPH07301824A (ja) * 1994-05-09 1995-11-14 Seiko Instr Inc 光弁用半導体装置
FR2735437B1 (fr) * 1995-06-19 1997-08-14 Sevylor International Vehicule roulant, notamment robot de nettoyage en particulier de piscine, a changement automatique de direction de deplacement devant un obstacle
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
DE19840251B4 (de) * 1998-09-03 2004-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schaltungschip, insbesondere Transponder mit Lichtschutz
US6515304B1 (en) * 2000-06-23 2003-02-04 International Business Machines Corporation Device for defeating reverse engineering of integrated circuits by optical means
US6686977B2 (en) * 2001-07-24 2004-02-03 Three-Five Systems, Inc. Liquid crystal on silicon device
WO2003098692A1 (en) * 2002-05-14 2003-11-27 Hrl Laboratories, Llc Integrated circuit with reverse engineering protection
US6933013B2 (en) * 2003-10-14 2005-08-23 Photon Dynamics, Inc. Vacuum deposition of dielectric coatings on volatile material

Also Published As

Publication number Publication date
WO2006013507A1 (en) 2006-02-09
CN101027774A (zh) 2007-08-29
EP1774592A1 (en) 2007-04-18
US20080093712A1 (en) 2008-04-24
JP2008507851A (ja) 2008-03-13
CN101027774B (zh) 2011-10-26

Similar Documents

Publication Publication Date Title
KR102053561B1 (ko) 광 검출 장치 및 광 검출 장치를 제조하는 방법
US7142363B2 (en) Diffraction element and optical device
KR20070039600A (ko) 광 보호 수단을 포함하는 칩 및 그 제조 방법
EP2128665B1 (en) Optical filter that uses localized plasmons
US9726794B2 (en) High index contrast grating structure for light manipulation and related method
US6926841B2 (en) Stepped etalon
CN109769398B (zh) 包括多个区域的光学透明的电磁屏蔽元件
JP6559208B2 (ja) フィルターコリメータおよびその形成方法
JP7504072B2 (ja) 導電性光半導体コーティングの装置及び方法
KR100340068B1 (ko) 광투과도 개선을 위하여 광학적으로 설계된 층을 갖는 이미지센서
US20040263981A1 (en) Diffractive optical element with anti-reflection coating
JP3189922B2 (ja) 回折光学素子
JP3214964B2 (ja) 回折光学素子
KR101891912B1 (ko) 구조색 필터 및 이의 제조방법
JP6895494B2 (ja) 光フィルター構造
EP2166383B1 (en) Optical filter
JPH06302845A (ja) 反射防止膜の形成方法
WO2024082212A1 (en) Optical element with distant layer
RU2282222C2 (ru) Зеркало-монохроматор для жесткого ультрафиолетового излучения
US20250334720A1 (en) Low-transmittance and low-reflectance coated substrate and manufacturing method thereof
JP3206207B2 (ja) レーザートリミング方法
JP2026508152A (ja) 接合基板構成およびそのような構成の製造方法
KR101544696B1 (ko) 레이저 반사형 마스크 제조방법
TW202430843A (zh) 編碼器用反射型光學尺、反射型光學式編碼器及編碼器用反射型光學尺用積層體
JP2020024424A (ja) 光学素子

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R19-X000 Request for party data change rejected

St.27 status event code: A-3-3-R10-R19-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000