KR20070037434A - 표면 적층물을 제거하기 위한 원격 챔버 방법 - Google Patents
표면 적층물을 제거하기 위한 원격 챔버 방법 Download PDFInfo
- Publication number
- KR20070037434A KR20070037434A KR1020067021947A KR20067021947A KR20070037434A KR 20070037434 A KR20070037434 A KR 20070037434A KR 1020067021947 A KR1020067021947 A KR 1020067021947A KR 20067021947 A KR20067021947 A KR 20067021947A KR 20070037434 A KR20070037434 A KR 20070037434A
- Authority
- KR
- South Korea
- Prior art keywords
- gas mixture
- oxygen
- surface stack
- gas
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 87
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 48
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 230000003213 activating effect Effects 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 230000007935 neutral effect Effects 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 9
- -1 NF 3 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 5
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 5
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical class [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- UEOZRAZSBQVQKG-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorooxolane Chemical compound FC1(F)OC(F)(F)C(F)(F)C1(F)F UEOZRAZSBQVQKG-UHFFFAOYSA-N 0.000 claims description 2
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 2
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 2
- 229960004065 perflutren Drugs 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GQUXQQYWQKRCPL-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluorocyclopropane Chemical compound FC1(F)C(F)(F)C1(F)F GQUXQQYWQKRCPL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 229950003332 perflubutane Drugs 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Public Health (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55622704P | 2004-03-24 | 2004-03-24 | |
| US60/556,227 | 2004-03-24 | ||
| US64044404P | 2004-12-30 | 2004-12-30 | |
| US64083304P | 2004-12-30 | 2004-12-30 | |
| US60/640,444 | 2004-12-30 | ||
| US60/640,833 | 2004-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20070037434A true KR20070037434A (ko) | 2007-04-04 |
Family
ID=34965582
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067021947A Withdrawn KR20070037434A (ko) | 2004-03-24 | 2005-03-24 | 표면 적층물을 제거하기 위한 원격 챔버 방법 |
| KR1020067021949A Withdrawn KR20070040748A (ko) | 2004-03-24 | 2005-03-24 | 표면 적층물을 제거하기 위한 원격 챔버 방법 |
| KR1020067021948A Withdrawn KR20070043697A (ko) | 2004-03-24 | 2005-03-24 | 표면 적층물을 제거하기 위한 원격 챔버 방법 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067021949A Withdrawn KR20070040748A (ko) | 2004-03-24 | 2005-03-24 | 표면 적층물을 제거하기 위한 원격 챔버 방법 |
| KR1020067021948A Withdrawn KR20070043697A (ko) | 2004-03-24 | 2005-03-24 | 표면 적층물을 제거하기 위한 원격 챔버 방법 |
Country Status (6)
| Country | Link |
|---|---|
| EP (3) | EP1733072A2 (enrdf_load_stackoverflow) |
| JP (3) | JP2007531288A (enrdf_load_stackoverflow) |
| KR (3) | KR20070037434A (enrdf_load_stackoverflow) |
| BR (3) | BRPI0508204A (enrdf_load_stackoverflow) |
| TW (3) | TWI281715B (enrdf_load_stackoverflow) |
| WO (3) | WO2005098086A2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160105407A (ko) * | 2013-12-30 | 2016-09-06 | 더 케무어스 컴퍼니 에프씨, 엘엘씨 | 챔버 세정 및 반도체 식각 기체 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0697467A1 (en) * | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
| US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
| RU2008108010A (ru) * | 2005-08-02 | 2009-09-10 | Массачусетс Инститьют Оф Текнолоджи (Us) | Способ применения фторида серы для удаления поверхностных отложений |
| US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
| US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
| EP2934775B1 (en) * | 2012-12-18 | 2021-03-17 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
| JP6202423B2 (ja) * | 2013-03-05 | 2017-09-27 | パナソニックＩｐマネジメント株式会社 | プラズマクリーニング方法およびプラズマクリーニング装置 |
| US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
| WO2020137528A1 (ja) * | 2018-12-25 | 2020-07-02 | 昭和電工株式会社 | 付着物除去方法及び成膜方法 |
| US11854773B2 (en) | 2020-03-31 | 2023-12-26 | Applied Materials, Inc. | Remote plasma cleaning of chambers for electronics manufacturing systems |
| EP3954804A1 (de) * | 2020-08-14 | 2022-02-16 | Siltronic AG | Vorrichtung und verfahren zum abscheiden einer schicht aus halbleitermaterial auf einer substratscheibe |
| CN116145106B (zh) * | 2023-02-21 | 2024-12-24 | 苏州鼎芯光电科技有限公司 | 一种用于半导体镀膜工艺腔室的清洁方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
| JP2002280376A (ja) * | 2001-03-22 | 2002-09-27 | Research Institute Of Innovative Technology For The Earth | Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置 |
-
2005
- 2005-03-24 BR BRPI0508204-8A patent/BRPI0508204A/pt not_active IP Right Cessation
- 2005-03-24 KR KR1020067021947A patent/KR20070037434A/ko not_active Withdrawn
- 2005-03-24 JP JP2007505282A patent/JP2007531288A/ja active Pending
- 2005-03-24 KR KR1020067021949A patent/KR20070040748A/ko not_active Withdrawn
- 2005-03-24 WO PCT/US2005/010692 patent/WO2005098086A2/en active Application Filing
- 2005-03-24 JP JP2007505283A patent/JP2007531289A/ja not_active Withdrawn
- 2005-03-24 EP EP05760380A patent/EP1733072A2/en not_active Withdrawn
- 2005-03-24 KR KR1020067021948A patent/KR20070043697A/ko not_active Withdrawn
- 2005-03-24 WO PCT/US2005/010691 patent/WO2005095670A2/en active Application Filing
- 2005-03-24 EP EP05734780A patent/EP1733071A2/en not_active Withdrawn
- 2005-03-24 BR BRPI0508214-5A patent/BRPI0508214A/pt not_active IP Right Cessation
- 2005-03-24 WO PCT/US2005/010693 patent/WO2005090638A2/en active Application Filing
- 2005-03-24 BR BRPI0508205-6A patent/BRPI0508205A/pt not_active Application Discontinuation
- 2005-03-24 EP EP05760434A patent/EP1737998A2/en not_active Withdrawn
- 2005-03-24 JP JP2007505281A patent/JP2007530792A/ja not_active Withdrawn
- 2005-06-28 TW TW094121536A patent/TWI281715B/zh not_active IP Right Cessation
- 2005-06-28 TW TW094121538A patent/TWI281714B/zh not_active IP Right Cessation
- 2005-06-28 TW TW094121537A patent/TWI284929B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160105407A (ko) * | 2013-12-30 | 2016-09-06 | 더 케무어스 컴퍼니 에프씨, 엘엘씨 | 챔버 세정 및 반도체 식각 기체 |
| KR20220070062A (ko) * | 2013-12-30 | 2022-05-27 | 더 케무어스 컴퍼니 에프씨, 엘엘씨 | 챔버 세정 및 반도체 식각 기체 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200623251A (en) | 2006-07-01 |
| WO2005095670A2 (en) | 2005-10-13 |
| JP2007531288A (ja) | 2007-11-01 |
| KR20070040748A (ko) | 2007-04-17 |
| EP1737998A2 (en) | 2007-01-03 |
| BRPI0508214A (pt) | 2007-07-17 |
| BRPI0508205A (pt) | 2007-07-17 |
| WO2005098086A2 (en) | 2005-10-20 |
| JP2007530792A (ja) | 2007-11-01 |
| JP2007531289A (ja) | 2007-11-01 |
| WO2005098086A3 (en) | 2006-05-04 |
| WO2005090638A2 (en) | 2005-09-29 |
| TW200623281A (en) | 2006-07-01 |
| TWI281715B (en) | 2007-05-21 |
| WO2005090638A9 (en) | 2006-01-26 |
| KR20070043697A (ko) | 2007-04-25 |
| EP1733072A2 (en) | 2006-12-20 |
| EP1733071A2 (en) | 2006-12-20 |
| TW200623240A (en) | 2006-07-01 |
| TWI284929B (en) | 2007-08-01 |
| WO2005090638A3 (en) | 2006-04-13 |
| BRPI0508204A (pt) | 2007-07-17 |
| TWI281714B (en) | 2007-05-21 |
| WO2005095670A3 (en) | 2006-05-04 |
| WO2005090638A8 (en) | 2006-11-16 |
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