KR20060126972A - 실리사이드 소스/드레인들을 가진 반도체 디바이스 - Google Patents

실리사이드 소스/드레인들을 가진 반도체 디바이스 Download PDF

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Publication number
KR20060126972A
KR20060126972A KR1020067009850A KR20067009850A KR20060126972A KR 20060126972 A KR20060126972 A KR 20060126972A KR 1020067009850 A KR1020067009850 A KR 1020067009850A KR 20067009850 A KR20067009850 A KR 20067009850A KR 20060126972 A KR20060126972 A KR 20060126972A
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South Korea
Prior art keywords
source
drain
atoms
forming
region
Prior art date
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KR1020067009850A
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English (en)
Korean (ko)
Inventor
드하르메쉬 자와라니
니겔 지. 카베
미카엘 렌덴
Original Assignee
프리스케일 세미컨덕터, 인크.
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Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20060126972A publication Critical patent/KR20060126972A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020067009850A 2003-11-21 2004-10-26 실리사이드 소스/드레인들을 가진 반도체 디바이스 Withdrawn KR20060126972A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/718,892 2003-11-21
US10/718,892 US7262105B2 (en) 2003-11-21 2003-11-21 Semiconductor device with silicided source/drains

Publications (1)

Publication Number Publication Date
KR20060126972A true KR20060126972A (ko) 2006-12-11

Family

ID=34591179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067009850A Withdrawn KR20060126972A (ko) 2003-11-21 2004-10-26 실리사이드 소스/드레인들을 가진 반도체 디바이스

Country Status (5)

Country Link
US (1) US7262105B2 (https=)
JP (1) JP2007512704A (https=)
KR (1) KR20060126972A (https=)
CN (1) CN1883042A (https=)
WO (1) WO2005052992A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240035298A (ko) * 2022-09-08 2024-03-15 유나이티드 마이크로일렉트로닉스 코퍼레이션 n-형 금속 산화물 반도체 트랜지스터 및 그 제조 방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294360A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp 半導体装置の製造方法
US7253071B2 (en) * 2004-06-02 2007-08-07 Taiwan Semiconductor Manufacturing Company Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide
US20090159111A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
US20090162966A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte Ltd Structure and method of formation of a solar cell
JP2009182089A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 半導体装置の製造方法
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
CN102867748B (zh) * 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
US8648412B1 (en) 2012-06-04 2014-02-11 Semiconductor Components Industries, Llc Trench power field effect transistor device and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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US4243433A (en) * 1978-01-18 1981-01-06 Gibbons James F Forming controlled inset regions by ion implantation and laser bombardment
JP2947654B2 (ja) * 1990-10-31 1999-09-13 キヤノン株式会社 Ｍｉｓ型トランジスタ
US5296387A (en) * 1991-03-06 1994-03-22 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistor structures
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JP3219996B2 (ja) * 1995-03-27 2001-10-15 株式会社東芝 半導体装置及びその製造方法
US6399452B1 (en) * 2000-07-08 2002-06-04 Advanced Micro Devices, Inc. Method of fabricating transistors with low thermal budget
US6486062B1 (en) * 2000-08-10 2002-11-26 Advanced Micro Devices, Inc. Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate
US6445016B1 (en) * 2001-02-28 2002-09-03 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI) transistor having partial hetero source/drain junctions fabricated with high energy germanium implantation
US20020187614A1 (en) * 2001-04-16 2002-12-12 Downey Daniel F. Methods for forming ultrashallow junctions with low sheet resistance
US6998353B2 (en) * 2001-11-05 2006-02-14 Ibis Technology Corporation Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers
US6638802B1 (en) * 2002-06-20 2003-10-28 Intel Corporation Forming strained source drain junction field effect transistors
US6797593B2 (en) * 2002-09-13 2004-09-28 Texas Instruments Incorporated Methods and apparatus for improved mosfet drain extension activation
US20050054164A1 (en) * 2003-09-09 2005-03-10 Advanced Micro Devices, Inc. Strained silicon MOSFETs having reduced diffusion of n-type dopants

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240035298A (ko) * 2022-09-08 2024-03-15 유나이티드 마이크로일렉트로닉스 코퍼레이션 n-형 금속 산화물 반도체 트랜지스터 및 그 제조 방법
US12550386B2 (en) 2022-09-08 2026-02-10 United Microelectronics Corp. N-type metal oxide semiconductor transistor and method for fabricating the same

Also Published As

Publication number Publication date
US7262105B2 (en) 2007-08-28
CN1883042A (zh) 2006-12-20
WO2005052992A2 (en) 2005-06-09
US20050112829A1 (en) 2005-05-26
JP2007512704A (ja) 2007-05-17
WO2005052992A3 (en) 2005-10-20

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