KR20060124578A - 자기저항효과에 의해 데이터를 기억하는 자기기억소자 - Google Patents

자기저항효과에 의해 데이터를 기억하는 자기기억소자 Download PDF

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Publication number
KR20060124578A
KR20060124578A KR1020060046932A KR20060046932A KR20060124578A KR 20060124578 A KR20060124578 A KR 20060124578A KR 1020060046932 A KR1020060046932 A KR 1020060046932A KR 20060046932 A KR20060046932 A KR 20060046932A KR 20060124578 A KR20060124578 A KR 20060124578A
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KR
South Korea
Prior art keywords
layer
ferromagnetic
magnetization
recording layer
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020060046932A
Other languages
English (en)
Korean (ko)
Inventor
타카시 타케나가
타케하루 쿠로이와
히로시 코바야시
사데 베이센
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시끼가이샤 르네사스 테크놀로지 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20060124578A publication Critical patent/KR20060124578A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1143—Magnetoresistive with defined structural feature

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
KR1020060046932A 2005-05-30 2006-05-25 자기저항효과에 의해 데이터를 기억하는 자기기억소자 Ceased KR20060124578A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005157459A JP2006332527A (ja) 2005-05-30 2005-05-30 磁気記憶素子
JPJP-P-2005-00157459 2005-05-30

Publications (1)

Publication Number Publication Date
KR20060124578A true KR20060124578A (ko) 2006-12-05

Family

ID=37462257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060046932A Ceased KR20060124578A (ko) 2005-05-30 2006-05-25 자기저항효과에 의해 데이터를 기억하는 자기기억소자

Country Status (4)

Country Link
US (1) US8036024B2 (https=)
JP (1) JP2006332527A (https=)
KR (1) KR20060124578A (https=)
TW (1) TW200703328A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058697B2 (en) * 2007-03-26 2011-11-15 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic synthetic free layer
GB2465370A (en) * 2008-11-13 2010-05-19 Ingenia Holdings Magnetic data storage comprising a synthetic anti-ferromagnetic stack arranged to maintain solitons
US8653615B2 (en) 2008-11-19 2014-02-18 Headway Technologies, Inc. MR device with synthetic free layer structure
JP5441024B2 (ja) * 2008-12-15 2014-03-12 ルネサスエレクトロニクス株式会社 磁気記憶装置
US20140037992A1 (en) * 2012-07-31 2014-02-06 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers
US20140037991A1 (en) * 2012-07-31 2014-02-06 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers
US8852762B2 (en) 2012-07-31 2014-10-07 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
EP3971598B1 (en) 2020-09-18 2025-09-03 Allegro MicroSystems, LLC Magnetoresistive element for a 2d magnetic sensor having a reduced hysteresis response

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271997B1 (en) * 1999-11-22 2001-08-07 International Business Machines Corporation Read head spin valve sensor with triple antiparallel coupled free layer structure
US6767655B2 (en) * 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
JP2002092829A (ja) * 2000-09-21 2002-03-29 Fujitsu Ltd 磁気抵抗センサ及び磁気抵抗ヘッド
WO2002103798A1 (en) * 2001-06-19 2002-12-27 Matsushita Electric Industrial Co., Ltd. Magnetic memory and its drive method, and magnetic memory apparatus comprising it
US6936903B2 (en) * 2001-09-25 2005-08-30 Hewlett-Packard Development Company, L.P. Magnetic memory cell having a soft reference layer
US6531723B1 (en) * 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
US20030235016A1 (en) * 2002-06-19 2003-12-25 International Business Machines Corporation Stabilization structures for CPP sensor
JP4237991B2 (ja) * 2002-08-29 2009-03-11 アルプス電気株式会社 磁気検出素子
US7216648B2 (en) * 2002-09-06 2007-05-15 Apneon, Inc. Systems and methods for moving and/or restraining tissue in the upper respiratory system
JP3931876B2 (ja) * 2002-11-01 2007-06-20 日本電気株式会社 磁気抵抗デバイス及びその製造方法
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7130166B2 (en) * 2003-07-02 2006-10-31 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR with improved synthetic free layer
US7298595B2 (en) * 2003-09-26 2007-11-20 Hitachi Global Storage Technologies Netherlands B.V. Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors
JP4337641B2 (ja) * 2004-06-10 2009-09-30 ソニー株式会社 不揮発性磁気メモリ装置及びフォトマスク
US7242556B2 (en) * 2004-06-21 2007-07-10 Hitachi Global Storage Technologies Netherlands B.V. CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording
US7280326B2 (en) * 2004-07-30 2007-10-09 Hitachi Global Storage Technologies Netherlands B.V. Trilayer SAF with current confining layer
JP4550552B2 (ja) * 2004-11-02 2010-09-22 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法
US7129098B2 (en) * 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7423850B2 (en) * 2005-03-31 2008-09-09 Hitachi Global Storage Technologies Netherlands B.V. CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise
JP2007027575A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
US8599605B2 (en) * 2007-05-28 2013-12-03 Nec Corporation Magnetic storage device
US7948044B2 (en) * 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same

Also Published As

Publication number Publication date
US20060267058A1 (en) 2006-11-30
JP2006332527A (ja) 2006-12-07
TW200703328A (en) 2007-01-16
US8036024B2 (en) 2011-10-11

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