KR20060118825A - 유기 el 소자의 제조방법 - Google Patents
유기 el 소자의 제조방법 Download PDFInfo
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- KR20060118825A KR20060118825A KR1020050041203A KR20050041203A KR20060118825A KR 20060118825 A KR20060118825 A KR 20060118825A KR 1020050041203 A KR1020050041203 A KR 1020050041203A KR 20050041203 A KR20050041203 A KR 20050041203A KR 20060118825 A KR20060118825 A KR 20060118825A
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- anode electrode
- insulating film
- organic
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- 238000010586 diagram Methods 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (7)
- TFT가 형성된 투명 기판 위에 제 1 절연막을 형성하는 단계;상기 제 1 절연막을 관통하여 TFT의 소오스 전극 및 드레인 전극에 연결되는 콘택을 형성하고 전면에 제 2 절연막을 형성하는 단계;상기 드레인 전극에 연결된 상기 콘택 표면이 노출되도록 상기 제 2 절연막에 제 1 콘택홀을 형성하는 단계;이후 형성될 어노드 전극을 분리시킬 부분에 격벽을 형성하는 단계;전면에 어노드 전극용 물질을 성막하여 상기 격벽을 통해 저절로 분리되는 어노드 전극을 형성하는 단계;픽셀의 발광부를 제외한 전면에 제 3 절연막을 형성하는 단계;상기 격벽 위에 형성된 어노드 전극용 물질을 노출되도록 상기 절연막에 제 2 콘택홀을 형성하는 단계;새도우 마스크를 이용하여 픽셀 발광부 영역에만 픽셀별로 해당되는 각각의 유기막을 증착하여 유기 EL층을 형성하는 단계;상기 유기 EL층 및 상기 제 2 콘택홀을 포함한 전면에 캐소드 전극을 적층시켜 상기 제 2 콘택홀을 통해 노출된 어노드 전극용 물질과 상기 캐소드 전극을 콘택시키는 단계를 포함하여 이루어짐을 특징으로 하는 유기 EL 소자의 제조방법.
- 제 1 항에 있어서,상기 격벽을 오버행(Over-hang) 구조로 형성하는 것을 특징으로 하는 유기 EL 소자의 제조방법.
- 제 1 항에 있어서,상기 격벽을 역사다리꼴 형태로 형성하는 것을 특징으로 하는 유기 EL 소자의 제조방법.
- 제 1 항에 있어서,상기 격벽을 처마 모양으로 형성하는 것을 특징으로 하는 유기 EL 소자의 제조방법.
- 제 1 항에 있어서,상기 격벽을 다층 레이어로 형성하는 것을 특징으로 하는 유기 EL 소자의 제조방법.
- 제 1 항에 있어서,상기 격벽을 유기물, 무기물, 메탈 및 이들의 혼합물을 이용하여 형성하는 것을 특징으로 하는 유기 EL 소자의 제조방법.
- 제 1 항에 있어서,상기 제 2 절연막 상에 적층된 구조가 평탄화되도록 평탄화 절연막을 형성하는 단계를 더 포함하여 이루어짐을 특징으로 하는 유기 EL 소자의 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050041203A KR100686120B1 (ko) | 2005-05-17 | 2005-05-17 | 유기 el 소자의 제조방법 |
EP20060010196 EP1724854B1 (en) | 2005-05-17 | 2006-05-17 | Organic electroluminescent device and method for manufacturing the same |
US11/434,820 US7586124B2 (en) | 2005-05-17 | 2006-05-17 | Organic electroluminescent device and method for manufacturing the same |
CNB2006100847047A CN100463213C (zh) | 2005-05-17 | 2006-05-17 | 有机电致发光器件及其制造方法 |
Applications Claiming Priority (1)
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KR1020050041203A KR100686120B1 (ko) | 2005-05-17 | 2005-05-17 | 유기 el 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060118825A true KR20060118825A (ko) | 2006-11-24 |
KR100686120B1 KR100686120B1 (ko) | 2007-02-26 |
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Family Applications (1)
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KR1020050041203A KR100686120B1 (ko) | 2005-05-17 | 2005-05-17 | 유기 el 소자의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7586124B2 (ko) |
EP (1) | EP1724854B1 (ko) |
KR (1) | KR100686120B1 (ko) |
CN (1) | CN100463213C (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100970607B1 (ko) * | 2007-07-03 | 2010-07-16 | 캐논 가부시끼가이샤 | 유기 el 표시장치 및 그 제조방법 |
US10074676B2 (en) | 2014-11-07 | 2018-09-11 | Samsung Display Co., Ltd. | Thin film transistor array substrate including source/drain electrodes between active layer and gate insulating layer |
KR20190067410A (ko) * | 2017-12-07 | 2019-06-17 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20080060087A (ko) * | 2006-12-26 | 2008-07-01 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
JP5443679B2 (ja) * | 2007-10-10 | 2014-03-19 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
GB2454867B (en) * | 2007-11-09 | 2010-02-03 | Cambridge Display Tech Ltd | Electroluminescent devices comprising bus bar |
CN101752401B (zh) * | 2008-12-11 | 2013-09-18 | 奇晶光电股份有限公司 | 双面显示装置及其制造方法 |
KR101254748B1 (ko) * | 2009-05-06 | 2013-04-15 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 이의 제조방법 |
KR102067966B1 (ko) * | 2013-08-30 | 2020-01-20 | 엘지디스플레이 주식회사 | 유기발광 다이오드 디스플레이 장치 및 그 제조방법 |
CN104979371A (zh) * | 2014-04-11 | 2015-10-14 | 上海和辉光电有限公司 | Oled发光装置及其制造方法 |
KR20160087990A (ko) * | 2015-01-14 | 2016-07-25 | 삼성디스플레이 주식회사 | 유기발광 표시패널 및 그 제조방법 |
CN106252525B (zh) * | 2016-08-26 | 2018-03-27 | 京东方科技集团股份有限公司 | Oled器件及制作方法、显示面板以及显示装置 |
CN107622975B (zh) * | 2017-09-05 | 2020-01-14 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板及其制程 |
CN108305891A (zh) * | 2018-02-12 | 2018-07-20 | 上海天马微电子有限公司 | 一种显示面板及其制造方法、显示装置 |
CN110112205B (zh) * | 2019-06-18 | 2021-04-09 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、有机发光二极管显示装置 |
CN110212007A (zh) * | 2019-06-21 | 2019-09-06 | 京东方科技集团股份有限公司 | 显示基板、显示装置以及制作显示基板的方法 |
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JP3813217B2 (ja) * | 1995-03-13 | 2006-08-23 | パイオニア株式会社 | 有機エレクトロルミネッセンスディスプレイパネルの製造方法 |
US6630785B1 (en) * | 2000-05-30 | 2003-10-07 | Ritdisplay Corporation | Surface treatment process for fabricating a panel of an organic light emitting device |
JP2002318556A (ja) | 2001-04-20 | 2002-10-31 | Toshiba Corp | アクティブマトリクス型平面表示装置およびその製造方法 |
DE10133686C2 (de) * | 2001-07-11 | 2003-07-17 | Osram Opto Semiconductors Gmbh | Organisches, elektrolumineszierendes Display und dessen Herstellung |
KR100611213B1 (ko) * | 2001-08-13 | 2006-08-09 | 삼성에스디아이 주식회사 | 세퍼레이터를 구비한 액티브 매트릭스 타입유기전계발광소자의 제조방법 및 이에 따른유기전계발광소자 |
JP2003186420A (ja) | 2001-12-21 | 2003-07-04 | Seiko Epson Corp | アクティブマトリクス基板、電気光学装置、電気光学装置の製造方法、及び電子機器 |
WO2004026002A1 (en) * | 2002-09-11 | 2004-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus and fabrication method of the same |
JP3915734B2 (ja) | 2003-05-12 | 2007-05-16 | ソニー株式会社 | 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置 |
JP2005011793A (ja) * | 2003-05-29 | 2005-01-13 | Sony Corp | 積層構造の製造方法および積層構造、表示素子ならびに表示装置 |
DE10340926A1 (de) * | 2003-09-03 | 2005-03-31 | Technische Universität Ilmenau Abteilung Forschungsförderung und Technologietransfer | Verfahren zur Herstellung von elektronischen Bauelementen |
-
2005
- 2005-05-17 KR KR1020050041203A patent/KR100686120B1/ko active IP Right Grant
-
2006
- 2006-05-17 CN CNB2006100847047A patent/CN100463213C/zh active Active
- 2006-05-17 EP EP20060010196 patent/EP1724854B1/en active Active
- 2006-05-17 US US11/434,820 patent/US7586124B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100970607B1 (ko) * | 2007-07-03 | 2010-07-16 | 캐논 가부시끼가이샤 | 유기 el 표시장치 및 그 제조방법 |
US10074676B2 (en) | 2014-11-07 | 2018-09-11 | Samsung Display Co., Ltd. | Thin film transistor array substrate including source/drain electrodes between active layer and gate insulating layer |
US10593711B2 (en) | 2014-11-07 | 2020-03-17 | Samsung Display Co., Ltd. | Method of manufacturing OLED display including thin film transistor having both source and drain formed over and patterned together with semiconductor layer |
KR20190067410A (ko) * | 2017-12-07 | 2019-06-17 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
Also Published As
Publication number | Publication date |
---|---|
KR100686120B1 (ko) | 2007-02-26 |
CN1866537A (zh) | 2006-11-22 |
US7586124B2 (en) | 2009-09-08 |
CN100463213C (zh) | 2009-02-18 |
EP1724854A1 (en) | 2006-11-22 |
EP1724854B1 (en) | 2015-04-22 |
US20060262052A1 (en) | 2006-11-23 |
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