KR20060111650A - 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트 - Google Patents

반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트 Download PDF

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Publication number
KR20060111650A
KR20060111650A KR1020067013210A KR20067013210A KR20060111650A KR 20060111650 A KR20060111650 A KR 20060111650A KR 1020067013210 A KR1020067013210 A KR 1020067013210A KR 20067013210 A KR20067013210 A KR 20067013210A KR 20060111650 A KR20060111650 A KR 20060111650A
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South Korea
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region
forming
semiconductor
trench
buried layer
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Korean (ko)
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제임스 에이. 키르치게스너
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프리스케일 세미컨덕터, 인크.
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Publication of KR20060111650A publication Critical patent/KR20060111650A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
KR1020067013210A 2003-12-31 2004-11-18 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트 Ceased KR20060111650A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,125 2003-12-31
US10/750,125 US7084485B2 (en) 2003-12-31 2003-12-31 Method of manufacturing a semiconductor component, and semiconductor component formed thereby

Publications (1)

Publication Number Publication Date
KR20060111650A true KR20060111650A (ko) 2006-10-27

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KR1020067013210A Ceased KR20060111650A (ko) 2003-12-31 2004-11-18 반도체 컴포넌트 제조 방법 및 그에 의해 형성된 반도체컴포넌트

Country Status (7)

Country Link
US (1) US7084485B2 (https=)
EP (1) EP1702349A4 (https=)
JP (1) JP2007525831A (https=)
KR (1) KR20060111650A (https=)
CN (1) CN101263600B (https=)
TW (1) TWI370520B (https=)
WO (1) WO2005065089A2 (https=)

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US7358545B2 (en) * 2005-08-10 2008-04-15 United Microelectronics Corp. Bipolar junction transistor
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US8405127B2 (en) * 2008-02-20 2013-03-26 International Business Machines Corporation Method and apparatus for fabricating a heterojunction bipolar transistor
JP2011528187A (ja) * 2008-07-14 2011-11-10 エヌエックスピー ビー ヴィ トランジスタデバイス及びその製造方法
US8053866B2 (en) * 2009-08-06 2011-11-08 Freescale Semiconductor, Inc. Varactor structures
CN102403343B (zh) * 2010-09-08 2013-07-24 上海华虹Nec电子有限公司 BiCMOS工艺中的垂直寄生型PNP器件及制造方法
CN102544081B (zh) * 2010-12-16 2014-10-08 上海华虹宏力半导体制造有限公司 锗硅异质结npn三极管及制造方法
CN102412274B (zh) * 2011-01-13 2014-02-26 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp器件及制造方法
CN102655170B (zh) * 2011-03-04 2014-08-13 上海华虹宏力半导体制造有限公司 锗硅异质结双极晶体管工艺中可变电容及制造方法
CN102956480A (zh) * 2011-08-31 2013-03-06 上海华虹Nec电子有限公司 有赝埋层的锗硅hbt降低集电极电阻的制造方法及器件
CN102412275B (zh) * 2011-09-22 2013-06-12 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中纵向PNP器件及制作方法
CN102412287B (zh) * 2011-11-08 2013-07-24 上海华虹Nec电子有限公司 锗硅hbt器件及其制造方法
CN103050518B (zh) * 2012-01-06 2015-04-08 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管及其制造方法
US10431654B2 (en) * 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors

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JPS55132052A (en) * 1979-03-31 1980-10-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4674173A (en) * 1985-06-28 1987-06-23 Texas Instruments Incorporated Method for fabricating bipolar transistor
JPH02283028A (ja) * 1988-12-23 1990-11-20 Fujitsu Ltd 半導体装置及びその製造方法
GB2243717B (en) * 1990-05-01 1994-06-15 Stc Plc Bipolar transistor device
US5061646A (en) 1990-06-29 1991-10-29 Motorola, Inc. Method for forming a self-aligned bipolar transistor
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
GB2288069B (en) * 1993-08-17 1998-01-28 Peter Fred Blomley Bipolar transistors and method of making the same
US5465006A (en) * 1994-07-15 1995-11-07 Hewlett-Packard Company Bipolar stripe transistor structure
US5569613A (en) * 1995-02-01 1996-10-29 United Microelectronics Corp. Method of making bipolar junction transistor
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
JP3322239B2 (ja) * 1999-04-30 2002-09-09 日本電気株式会社 半導体装置の製造方法
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2002141476A (ja) * 2000-11-07 2002-05-17 Hitachi Ltd ＢｉＣＭＯＳ半導体集積回路装置およびその製造方法
JP3621359B2 (ja) * 2001-05-25 2005-02-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2003007713A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur
JP3761162B2 (ja) * 2002-03-27 2006-03-29 ローム株式会社 バイポーラトランジスタ及びこれを用いた半導体装置

Also Published As

Publication number Publication date
TW200525701A (en) 2005-08-01
EP1702349A4 (en) 2010-09-15
TWI370520B (en) 2012-08-11
EP1702349A2 (en) 2006-09-20
CN101263600B (zh) 2010-10-27
WO2005065089A2 (en) 2005-07-21
JP2007525831A (ja) 2007-09-06
WO2005065089A3 (en) 2007-12-06
US7084485B2 (en) 2006-08-01
US20050145951A1 (en) 2005-07-07
CN101263600A (zh) 2008-09-10

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