KR20060076384A - 씨모스 이미지 센서의 제조방법 - Google Patents
씨모스 이미지 센서의 제조방법 Download PDFInfo
- Publication number
- KR20060076384A KR20060076384A KR1020040114779A KR20040114779A KR20060076384A KR 20060076384 A KR20060076384 A KR 20060076384A KR 1020040114779 A KR1020040114779 A KR 1020040114779A KR 20040114779 A KR20040114779 A KR 20040114779A KR 20060076384 A KR20060076384 A KR 20060076384A
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- Prior art keywords
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- gate electrode
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- image sensor
- transistor
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 125000006850 spacer group Chemical group 0.000 claims abstract description 9
- 238000005468 ion implantation Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (2)
- 포토다이오드 영역과 트랜지스터 영역이 정의되는 제 1 도전형 반도체 기판을 준비하는 단계;전면에 절연막을 증착하고 상기 트랜지스터 영역의 게이트 전극 형성할 영역의 상기 절연막을 제거하는 단계;상기 게이트 전극 형성 위치의 반도체 기판에 게이트 절연막을 형성하는 단계;전면에 도전층을 증착하고 상기 절연막 표면이 노출되도록 평탄화하여 게이트 전극을 형성하는 단계;상기 트랜지스터 영역의 상기 절연막을 제거하고, 노출된 반도체 기판에 저농도 제 2 도전형 불순물 영역을 형성하는 단계;상기 게이트 전극 측벽에 스페이서를 형성하고 상기 절연막을 모두 제거하는 단계;마스크 및 이온 주입 공정으로 상기 트랜지스터 형성 영역의 반도체 기판에 고농도 제 2 도전형 불순물 영역 및 상기 포토 다이오드 영역에 제 2 도전형 불순물 영역 및 제 1 도전형 불순물 영역을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 씨모스 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 게이트 절연막은 산화 공정에 의해 형성함을 특징으로 하는 씨모스 이미지 센서의 제조 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040114779A KR100606908B1 (ko) | 2004-12-29 | 2004-12-29 | 씨모스 이미지 센서의 제조방법 |
CNB2005101376145A CN100405580C (zh) | 2004-12-29 | 2005-12-26 | 制造cmos图像传感器的方法 |
JP2005374220A JP2006191054A (ja) | 2004-12-29 | 2005-12-27 | Cmosイメージセンサの製造方法 |
US11/319,065 US7361542B2 (en) | 2004-12-29 | 2005-12-28 | Method of fabricating CMOS image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040114779A KR100606908B1 (ko) | 2004-12-29 | 2004-12-29 | 씨모스 이미지 센서의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060076384A true KR20060076384A (ko) | 2006-07-04 |
KR100606908B1 KR100606908B1 (ko) | 2006-08-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040114779A KR100606908B1 (ko) | 2004-12-29 | 2004-12-29 | 씨모스 이미지 센서의 제조방법 |
Country Status (2)
Country | Link |
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KR (1) | KR100606908B1 (ko) |
CN (1) | CN100405580C (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100924868B1 (ko) * | 2007-11-27 | 2009-11-02 | 주식회사 동부하이텍 | Cmos 이미지 센서의 게이트 패턴 형성 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101800441B1 (ko) | 2010-10-22 | 2017-11-22 | 삼성전자주식회사 | 반도체 소자의 형성 방법 |
CN105529250B (zh) * | 2014-09-30 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | 高能离子注入方法及半导体结构 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100464949B1 (ko) * | 2000-08-31 | 2005-01-05 | 매그나칩 반도체 유한회사 | 포토다이오드의 표면 특성을 향상시킬 수 있는 이미지센서 제조 방법 |
KR100494030B1 (ko) * | 2002-01-10 | 2005-06-10 | 매그나칩 반도체 유한회사 | 이미지센서 및 그 제조 방법 |
US6818930B2 (en) * | 2002-11-12 | 2004-11-16 | Micron Technology, Inc. | Gated isolation structure for imagers |
KR100494645B1 (ko) * | 2002-12-27 | 2005-06-13 | 매그나칩 반도체 유한회사 | 스페이서 블록마스크를 적용한 시모스 이미지센서의제조방법 |
KR20040058739A (ko) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | 시모스 이미지센서의 제조방법 |
KR20040058692A (ko) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | 포토다이오드의 표면을 보호하는 막을 구비한 시모스이미지센서 및 그 제조방법 |
US7087944B2 (en) * | 2003-01-16 | 2006-08-08 | Micron Technology, Inc. | Image sensor having a charge storage region provided within an implant region |
KR100521966B1 (ko) * | 2003-04-29 | 2005-10-17 | 매그나칩 반도체 유한회사 | 씨모스 이미지센서의 제조방법 |
US7122408B2 (en) * | 2003-06-16 | 2006-10-17 | Micron Technology, Inc. | Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation |
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2004
- 2004-12-29 KR KR1020040114779A patent/KR100606908B1/ko active IP Right Grant
-
2005
- 2005-12-26 CN CNB2005101376145A patent/CN100405580C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100924868B1 (ko) * | 2007-11-27 | 2009-11-02 | 주식회사 동부하이텍 | Cmos 이미지 센서의 게이트 패턴 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN100405580C (zh) | 2008-07-23 |
KR100606908B1 (ko) | 2006-08-01 |
CN1819152A (zh) | 2006-08-16 |
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