KR20060074346A - 반도체 소자의 금속 배선 형성 방법 - Google Patents
반도체 소자의 금속 배선 형성 방법 Download PDFInfo
- Publication number
- KR20060074346A KR20060074346A KR1020040113066A KR20040113066A KR20060074346A KR 20060074346 A KR20060074346 A KR 20060074346A KR 1020040113066 A KR1020040113066 A KR 1020040113066A KR 20040113066 A KR20040113066 A KR 20040113066A KR 20060074346 A KR20060074346 A KR 20060074346A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- metal wiring
- forming
- barrier
- wiring
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000010949 copper Substances 0.000 claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 claims abstract description 68
- 230000004888 barrier function Effects 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims abstract description 35
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 239000011229 interlayer Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 9
- 238000007772 electroless plating Methods 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000009429 electrical wiring Methods 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040113066A KR101107229B1 (ko) | 2004-12-27 | 2004-12-27 | 반도체 소자의 금속 배선 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040113066A KR101107229B1 (ko) | 2004-12-27 | 2004-12-27 | 반도체 소자의 금속 배선 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060074346A true KR20060074346A (ko) | 2006-07-03 |
KR101107229B1 KR101107229B1 (ko) | 2012-01-25 |
Family
ID=37167116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040113066A KR101107229B1 (ko) | 2004-12-27 | 2004-12-27 | 반도체 소자의 금속 배선 형성 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101107229B1 (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100737701B1 (ko) | 2006-08-31 | 2007-07-10 | 동부일렉트로닉스 주식회사 | 반도체 소자의 배선 형성 방법 |
KR100770533B1 (ko) * | 2006-08-30 | 2007-10-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 이를 제조하는 방법 |
KR100850076B1 (ko) * | 2006-12-21 | 2008-08-04 | 동부일렉트로닉스 주식회사 | 부식 방지를 위한 구리배선 구조 |
US7888798B2 (en) | 2007-05-16 | 2011-02-15 | Samsung Electronics Co., Ltd. | Semiconductor devices including interlayer conductive contacts and methods of forming the same |
KR101048744B1 (ko) * | 2008-09-19 | 2011-07-14 | 서울대학교산학협력단 | 무전해 도금을 통한 코발트 합금 계열의 다층 확산방지막 형성방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100404649B1 (ko) * | 1998-02-23 | 2003-11-10 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체장치 및 그 제조방법 |
KR100720401B1 (ko) * | 2001-06-01 | 2007-05-22 | 매그나칩 반도체 유한회사 | 반도체 소자의 구리 배선 형성 방법 |
KR100545196B1 (ko) * | 2002-07-26 | 2006-01-24 | 동부아남반도체 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
-
2004
- 2004-12-27 KR KR1020040113066A patent/KR101107229B1/ko active IP Right Grant
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100770533B1 (ko) * | 2006-08-30 | 2007-10-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 이를 제조하는 방법 |
KR100737701B1 (ko) | 2006-08-31 | 2007-07-10 | 동부일렉트로닉스 주식회사 | 반도체 소자의 배선 형성 방법 |
KR100850076B1 (ko) * | 2006-12-21 | 2008-08-04 | 동부일렉트로닉스 주식회사 | 부식 방지를 위한 구리배선 구조 |
US7888798B2 (en) | 2007-05-16 | 2011-02-15 | Samsung Electronics Co., Ltd. | Semiconductor devices including interlayer conductive contacts and methods of forming the same |
US8404593B2 (en) | 2007-05-16 | 2013-03-26 | Samsung Electronics Co., Ltd. | Semiconductor devices including interlayer conductive contacts and methods of forming the same |
KR101048744B1 (ko) * | 2008-09-19 | 2011-07-14 | 서울대학교산학협력단 | 무전해 도금을 통한 코발트 합금 계열의 다층 확산방지막 형성방법 |
Also Published As
Publication number | Publication date |
---|---|
KR101107229B1 (ko) | 2012-01-25 |
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