KR20060058048A - 다공성 저 유전막 상의 불투과성 막 증착 방법 - Google Patents

다공성 저 유전막 상의 불투과성 막 증착 방법 Download PDF

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Publication number
KR20060058048A
KR20060058048A KR1020057014407A KR20057014407A KR20060058048A KR 20060058048 A KR20060058048 A KR 20060058048A KR 1020057014407 A KR1020057014407 A KR 1020057014407A KR 20057014407 A KR20057014407 A KR 20057014407A KR 20060058048 A KR20060058048 A KR 20060058048A
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KR
South Korea
Prior art keywords
film
porous
impermeable
porous low
dielectric constant
Prior art date
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Ceased
Application number
KR1020057014407A
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English (en)
Korean (ko)
Inventor
치홍 장
타이 둥 뉴옌
투 뉴옌
Original Assignee
테갈 코퍼레이션
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Filing date
Publication date
Application filed by 테갈 코퍼레이션 filed Critical 테갈 코퍼레이션
Publication of KR20060058048A publication Critical patent/KR20060058048A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020057014407A 2003-02-04 2004-02-04 다공성 저 유전막 상의 불투과성 막 증착 방법 Ceased KR20060058048A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/360,133 2003-02-04
US10/360,133 US6919101B2 (en) 2003-02-04 2003-02-04 Method to deposit an impermeable film on porous low-k dielectric film

Publications (1)

Publication Number Publication Date
KR20060058048A true KR20060058048A (ko) 2006-05-29

Family

ID=32771366

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057014407A Ceased KR20060058048A (ko) 2003-02-04 2004-02-04 다공성 저 유전막 상의 불투과성 막 증착 방법

Country Status (6)

Country Link
US (2) US6919101B2 (https=)
EP (1) EP1599614A4 (https=)
JP (1) JP2006517061A (https=)
KR (1) KR20060058048A (https=)
CN (1) CN100476021C (https=)
WO (1) WO2004070794A2 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
JP4279195B2 (ja) * 2004-05-18 2009-06-17 ソニー株式会社 半導体装置
US20050272220A1 (en) * 2004-06-07 2005-12-08 Carlo Waldfried Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
US7601246B2 (en) * 2004-09-29 2009-10-13 Lam Research Corporation Methods of sputtering a protective coating on a semiconductor substrate
US7700438B2 (en) * 2006-01-30 2010-04-20 Freescale Semiconductor, Inc. MOS device with nano-crystal gate structure
US8092861B2 (en) * 2007-09-05 2012-01-10 United Microelectronics Corp. Method of fabricating an ultra dielectric constant (K) dielectric layer
KR101142334B1 (ko) * 2009-06-04 2012-05-17 에스케이하이닉스 주식회사 반도체 소자 및 그의 제조방법
US8969132B2 (en) 2010-09-20 2015-03-03 Nuvotronics, Llc Device package and methods for the fabrication thereof
CN102446813B (zh) * 2010-10-13 2013-09-11 中芯国际集成电路制造(上海)有限公司 互连结构的制作方法
CN102446817B (zh) * 2010-10-14 2013-11-06 中芯国际集成电路制造(上海)有限公司 互连结构的制作方法
US9018089B2 (en) * 2011-08-30 2015-04-28 International Business Machines Corporation Multiple step anneal method and semiconductor formed by multiple step anneal
AU2013232034B2 (en) * 2012-03-16 2017-02-02 Endotronix, Inc. Permittivity shielding
US9337152B2 (en) 2013-03-15 2016-05-10 Nuvotronics, Inc Formulation for packaging an electronic device and assemblies made therefrom
CN104073853A (zh) * 2014-06-30 2014-10-01 上海交通大学 锂离子电池负极用硅氧碳复合物多孔电极的电沉积制备
JP6576235B2 (ja) * 2015-12-21 2019-09-18 東京エレクトロン株式会社 Ｄｒａｍキャパシタの下部電極およびその製造方法
JP6749225B2 (ja) * 2016-12-06 2020-09-02 東京エレクトロン株式会社 クリーニング方法
KR20200037824A (ko) * 2017-07-27 2020-04-09 에바텍 아크티엔게젤샤프트 투과 장벽

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480678A (en) * 1994-11-16 1996-01-02 The B. F. Goodrich Company Apparatus for use with CVI/CVD processes
JPH09275139A (ja) * 1996-04-04 1997-10-21 Sony Corp 半導体装置の配線形成方法及びスパッタ装置
JP3617283B2 (ja) * 1997-11-10 2005-02-02 ソニー株式会社 半導体装置の製造方法およびこれを用いた半導体装置
US6171945B1 (en) * 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films
US6707544B1 (en) * 1999-09-07 2004-03-16 Applied Materials, Inc. Particle detection and embedded vision system to enhance substrate yield and throughput
US6296906B1 (en) * 1999-09-30 2001-10-02 Novellus Systems, Inc. Annealing process for low-k dielectric film
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6632478B2 (en) * 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber

Also Published As

Publication number Publication date
US20040149686A1 (en) 2004-08-05
JP2006517061A (ja) 2006-07-13
WO2004070794A3 (en) 2004-10-21
US20050084619A1 (en) 2005-04-21
EP1599614A4 (en) 2008-04-09
WO2004070794B1 (en) 2005-09-15
WO2004070794A2 (en) 2004-08-19
CN100476021C (zh) 2009-04-08
CN1768160A (zh) 2006-05-03
EP1599614A2 (en) 2005-11-30
US6919101B2 (en) 2005-07-19

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