KR20050103732A - 이미지센서의 인티그레이션 방법 - Google Patents
이미지센서의 인티그레이션 방법 Download PDFInfo
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- KR20050103732A KR20050103732A KR1020040029015A KR20040029015A KR20050103732A KR 20050103732 A KR20050103732 A KR 20050103732A KR 1020040029015 A KR1020040029015 A KR 1020040029015A KR 20040029015 A KR20040029015 A KR 20040029015A KR 20050103732 A KR20050103732 A KR 20050103732A
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- integration
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- light source
- image sensor
- frequency
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- 230000010354 integration Effects 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/14—Picture signal circuitry for video frequency region
- H04N5/21—Circuitry for suppressing or minimising disturbance, e.g. moiré or halo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/745—Detection of flicker frequency or suppression of flicker wherein the flicker is caused by illumination, e.g. due to fluorescent tube illumination or pulsed LED illumination
Abstract
Description
Claims (7)
- 라인 스캔 방식을 채용한 이미지센서의 인티그레이션 방법에 있어서,광원 주파수의 정수배와 인티그레이션 타임이 다를 경우, 제1라인에 대한 인티그레이션이 완료된 후, 상기 제1라인의 인티그레이션이 시작된 위상과 실질적으로 동일한 위상에서 제2라인에 대한 인티그레이션을 실시하는 것을 특징으로 하는 이미지센서의 인티그레이션 방법.
- 제 1 항에 있어서,상기 광원의 주파수가 50Hz의 정수배이고 상기 인티그레이션 타임이 1/(60Hz의 정수배)일 때, 상기 제1라인에 대한 인티그레이션이 완료된 다음 (1/(50의 정수배)-1/(60의 정수배))초 동안 대기한 후, 상기 제2라인에 대한 인티그레이션을 실시하는 것을 특징으로 하는 이미지센서의 인티그레이션 방법.
- 제 1 항에 있어서,상기 광원의 주파수가 60Hz의 정수배이고 상기 인티그레이션 타임이 1/(50Hz의 정수배)일 때, 상기 제1라인에 대한 인티그레이션이 완료된 다음 (2/(60의 정수배)-1/(50의 정수배))초 동안 대기한 후, 상기 제2라인에 대한 인티그레이션을 실시하는 것을 특징으로 하는 이미지센서의 인티그레이션 방법.
- 라인 스캔 방식을 채용한 이미지센서의 인티그레이션 방법에 있어서,제1라인에 대한 인티그레이션을 실시하는 단계;광원의 주파수의 정수배와 인티그레이션 타임을 비교하는 단계;비교 결과, 상기 광원의 주파수의 정수배와 상기 인티그레이션 타임이 다름에 따라 상기 제1라인 인티그레이션시 시작된 광원 주파수의 위상과 실질적으로 동일한 위상이 될 때까지 제2라인에 대한 인티그레이션을 지연시키는 단계; 및제1라인 인티그레이션시 시작된 광원 주파수의 위상과 실질적으로 동일한 위상에서 제2라인에 대한 인티그레이션을 실시하는 단계를 포함하는 이미지센서의 인티그레이션 방법.
- 제 4 항에 있어서,상기 비교 결과, 상기 광원 주파수의 정수배와 상기 인티그레이션 타임이 동일함에 따라 소정의 시간 후 제2라인에 대한 인티그레이션을 실시하는 것을 특징으로 하는 이미지센서의 인티그레이션 방법.
- 제 4 항에 있어서,상기 광원의 주파수가 50Hz의 정수배이고 상기 인티그레이션 타임이 1/(60Hz의 정수배)일 때, 상기 제1라인에 대한 인티그레이션이 완료된 다음 (1/(의 정수배)50-1/(60의 정수배))초 동안 대기한 후, 상기 제2라인에 대한 인티그레이션을 실시하는 것을 특징으로 하는 이미지센서의 인티그레이션 방법.
- 제 4 항에 있어서,상기 광원의 주파수가 60Hz의 정수배이고 상기 인티그레이션 타임이 1/(50Hz의 정수배)일 때, 상기 제1라인에 대한 인티그레이션이 완료된 다음 (2/(60의 정수배)-1/(50의 정수배))초 동안 대기한 후, 상기 제2라인에 대한 인티그레이션을 실시하는 것을 특징으로 하는 이미지센서의 인티그레이션 방법.
Priority Applications (3)
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KR1020040029015A KR100578647B1 (ko) | 2004-04-27 | 2004-04-27 | 이미지센서의 인티그레이션 방법 |
US11/084,388 US7515179B2 (en) | 2004-04-27 | 2005-03-17 | Method for integrating image sensor |
US12/419,247 US8279302B2 (en) | 2004-04-27 | 2009-04-06 | Method for integrating image sensor |
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KR1020040029015A KR100578647B1 (ko) | 2004-04-27 | 2004-04-27 | 이미지센서의 인티그레이션 방법 |
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KR20050103732A true KR20050103732A (ko) | 2005-11-01 |
KR100578647B1 KR100578647B1 (ko) | 2006-05-11 |
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KR (1) | KR100578647B1 (ko) |
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US9741754B2 (en) | 2013-03-06 | 2017-08-22 | Apple Inc. | Charge transfer circuit with storage nodes in image sensors |
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US10263032B2 (en) | 2013-03-04 | 2019-04-16 | Apple, Inc. | Photodiode with different electric potential regions for image sensors |
US10285626B1 (en) | 2014-02-14 | 2019-05-14 | Apple Inc. | Activity identification using an optical heart rate monitor |
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US7605359B2 (en) * | 2007-09-14 | 2009-10-20 | Omnivision Technologies, Inc. | Light source frequency detection circuit for image sensor |
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-
2004
- 2004-04-27 KR KR1020040029015A patent/KR100578647B1/ko active IP Right Grant
-
2005
- 2005-03-17 US US11/084,388 patent/US7515179B2/en active Active
-
2009
- 2009-04-06 US US12/419,247 patent/US8279302B2/en active Active
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US10285626B1 (en) | 2014-02-14 | 2019-05-14 | Apple Inc. | Activity identification using an optical heart rate monitor |
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US10438987B2 (en) | 2016-09-23 | 2019-10-08 | Apple Inc. | Stacked backside illuminated SPAD array |
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US10656251B1 (en) | 2017-01-25 | 2020-05-19 | Apple Inc. | Signal acquisition in a SPAD detector |
US10801886B2 (en) | 2017-01-25 | 2020-10-13 | Apple Inc. | SPAD detector having modulated sensitivity |
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US11546532B1 (en) | 2021-03-16 | 2023-01-03 | Apple Inc. | Dynamic correlated double sampling for noise rejection in image sensors |
Also Published As
Publication number | Publication date |
---|---|
US20090195671A1 (en) | 2009-08-06 |
KR100578647B1 (ko) | 2006-05-11 |
US7515179B2 (en) | 2009-04-07 |
US8279302B2 (en) | 2012-10-02 |
US20050246143A1 (en) | 2005-11-03 |
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