KR20050101167A - 다공성 저유전 상수 재료의 플루오르 무함유 플라즈마경화법 - Google Patents

다공성 저유전 상수 재료의 플루오르 무함유 플라즈마경화법 Download PDF

Info

Publication number
KR20050101167A
KR20050101167A KR1020057012651A KR20057012651A KR20050101167A KR 20050101167 A KR20050101167 A KR 20050101167A KR 1020057012651 A KR1020057012651 A KR 1020057012651A KR 20057012651 A KR20057012651 A KR 20057012651A KR 20050101167 A KR20050101167 A KR 20050101167A
Authority
KR
South Korea
Prior art keywords
dielectric material
fluorine
porous dielectric
free plasma
cured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057012651A
Other languages
English (en)
Korean (ko)
Inventor
칼로 월드프레드
큉얀 한
올랜도 에스코샤
랄프 알바노
이반 엘. 삼 베리
아츠시 시오타
Original Assignee
액셀리스 테크놀로지스, 인크.
제이에스알 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/346,560 external-priority patent/US20030157267A1/en
Application filed by 액셀리스 테크놀로지스, 인크., 제이에스알 가부시끼가이샤 filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20050101167A publication Critical patent/KR20050101167A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/126—Preparation of silica of undetermined type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
KR1020057012651A 2003-01-17 2004-01-16 다공성 저유전 상수 재료의 플루오르 무함유 플라즈마경화법 Withdrawn KR20050101167A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/346,560 US20030157267A1 (en) 2000-03-20 2003-01-17 Fluorine-free plasma curing process for porous low-k materials
US10/346,560 2003-01-17
US10/627,894 US7011868B2 (en) 2000-03-20 2003-07-24 Fluorine-free plasma curing process for porous low-k materials
US10/627,894 2003-07-24

Publications (1)

Publication Number Publication Date
KR20050101167A true KR20050101167A (ko) 2005-10-20

Family

ID=32775613

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057012651A Withdrawn KR20050101167A (ko) 2003-01-17 2004-01-16 다공성 저유전 상수 재료의 플루오르 무함유 플라즈마경화법

Country Status (6)

Country Link
US (1) US7011868B2 (cg-RX-API-DMAC7.html)
EP (1) EP1593149A1 (cg-RX-API-DMAC7.html)
JP (1) JP2006516363A (cg-RX-API-DMAC7.html)
KR (1) KR20050101167A (cg-RX-API-DMAC7.html)
TW (1) TW200508411A (cg-RX-API-DMAC7.html)
WO (1) WO2004066374A1 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI286814B (en) * 2003-04-28 2007-09-11 Fujitsu Ltd Fabrication process of a semiconductor device
US20050196974A1 (en) * 2004-03-02 2005-09-08 Weigel Scott J. Compositions for preparing low dielectric materials containing solvents
US7271089B2 (en) * 2004-09-01 2007-09-18 Micron Technology, Inc. Barrier layer, IC via, and IC line forming methods
FR2887252A1 (fr) * 2005-06-21 2006-12-22 Air Liquide Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede
US20070299239A1 (en) * 2006-06-27 2007-12-27 Air Products And Chemicals, Inc. Curing Dielectric Films Under A Reducing Atmosphere
US8053375B1 (en) * 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
FR3018951B1 (fr) * 2014-03-18 2017-06-09 Commissariat Energie Atomique Procede de gravure d'un materiau dielectrique poreux
TWI785070B (zh) 2017-07-31 2022-12-01 美商陶氏有機矽公司 聚矽氧樹脂、相關方法、以及由其形成的膜
US20210265158A1 (en) * 2020-02-25 2021-08-26 Asm Ip Holding B.V. Method of forming low-k material layer, structure including the layer, and system for forming same

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS6086017A (ja) 1983-10-17 1985-05-15 Fujitsu Ltd ポリハイドロジエンシルセスキオキサンの製法
US4636440A (en) 1985-10-28 1987-01-13 Manville Corporation Novel process for coating substrates with glass-like films and coated substrates
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4822697A (en) 1986-12-03 1989-04-18 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics
US4808653A (en) 1986-12-04 1989-02-28 Dow Corning Corporation Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors
US5008320A (en) 1986-12-04 1991-04-16 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4749631B1 (en) 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4847162A (en) 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US4842888A (en) 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
DE3834088A1 (de) 1988-10-07 1990-04-12 Basf Ag Verfahren zum herstellen von homopolymerisaten des ethens sowie copolymerisaten des ethens mit hoeheren (alpha)-monoolefinen mittels eines ziegler-katalysatorsystems
US4999397A (en) 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
JPH0832304B2 (ja) 1989-08-18 1996-03-29 株式会社日立製作所 無機ポリマ薄膜の形成方法
US5010159A (en) 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
US5262201A (en) 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5116637A (en) 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5063267A (en) 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
JP2795002B2 (ja) 1991-09-19 1998-09-10 日本電気株式会社 ＨｇＣｄＴｅ薄膜の製造方法
JP3153367B2 (ja) 1992-11-24 2001-04-09 ダウ・コ−ニング・コ−ポレ−ション ポリハイドロジェンシルセスキオキサンの分子量分別方法
US5441765A (en) 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings
US5855953A (en) 1994-03-31 1999-01-05 The Regents, University Of California Aerogel composites and method of manufacture
US5547703A (en) 1994-04-11 1996-08-20 Dow Corning Corporation Method of forming si-o containing coatings
US5618878A (en) 1995-04-07 1997-04-08 Dow Corning Corporation Hydrogen silsesquioxane resin coating composition
WO1997010282A1 (en) * 1995-09-12 1997-03-20 Gelest, Inc. Beta-substituted organosilsesquioxanes and use thereof
US5961851A (en) 1996-04-02 1999-10-05 Fusion Systems Corporation Microwave plasma discharge device
US5935646A (en) 1996-08-23 1999-08-10 Gas Research Institute Molecular sieving silica membrane fabrication process
US6080526A (en) 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
JP3226021B2 (ja) * 1997-09-02 2001-11-05 日本電気株式会社 半導体装置の製造方法
US6149987A (en) 1998-04-07 2000-11-21 Applied Materials, Inc. Method for depositing low dielectric constant oxide films
US6284050B1 (en) * 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
US6054206A (en) 1998-06-22 2000-04-25 Novellus Systems, Inc. Chemical vapor deposition of low density silicon dioxide films
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
US6599829B2 (en) * 1998-11-25 2003-07-29 Texas Instruments Incorporated Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
JP3084367B1 (ja) 1999-03-17 2000-09-04 キヤノン販売株式会社 層間絶縁膜の形成方法及び半導体装置
US6156743A (en) 1999-10-18 2000-12-05 Whitcomb; John E. Method of decreasing fatigue
US6232424B1 (en) 1999-12-13 2001-05-15 Dow Corning Corporation Soluble silicone resin compositions having good solution stability
US6313045B1 (en) 1999-12-13 2001-11-06 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants and method for preparation
US6359096B1 (en) 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
US6143360A (en) 1999-12-13 2000-11-07 Dow Corning Corporation Method for making nanoporous silicone resins from alkylydridosiloxane resins
US6265320B1 (en) * 1999-12-21 2001-07-24 Novellus Systems, Inc. Method of minimizing reactive ion etch damage of organic insulating layers in semiconductor fabrication
US6576546B2 (en) * 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
KR100816698B1 (ko) 2000-04-03 2008-03-27 가부시키가이샤 알박 다공성 ｓｏｇ 필름의 제조방법
US6346490B1 (en) * 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
JP2001291427A (ja) * 2000-04-06 2001-10-19 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
JP3403372B2 (ja) 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
US6620733B2 (en) * 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6647994B1 (en) * 2002-01-02 2003-11-18 Taiwan Semiconductor Manufacturing Company Method of resist stripping over low-k dielectric material
KR100650714B1 (ko) * 2003-06-16 2006-11-27 주식회사 하이닉스반도체 반도체소자의 저유전체막 형성방법
US20050048795A1 (en) * 2003-08-27 2005-03-03 Chung-Chi Ko Method for ultra low-K dielectric deposition
US7250370B2 (en) * 2003-09-19 2007-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties

Also Published As

Publication number Publication date
JP2006516363A (ja) 2006-06-29
US7011868B2 (en) 2006-03-14
EP1593149A1 (en) 2005-11-09
TW200508411A (en) 2005-03-01
WO2004066374A1 (en) 2004-08-05
US20040028916A1 (en) 2004-02-12

Similar Documents

Publication Publication Date Title
US6902771B2 (en) Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US7932295B2 (en) Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
US7291567B2 (en) Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
EP1127929B1 (en) Composition for film formation, method of film formation, and silica-based film
US8268403B2 (en) Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
US8404786B2 (en) Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same
US7893538B2 (en) Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device
US20050096415A1 (en) Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
EP1088868B1 (en) Composition for film formation, method of film formation, and insulating film
US6890605B2 (en) Method of film formation, insulating film, and substrate for semiconductor
US6410150B1 (en) Composition for film formation, method of film formation, and insulating film
US20030104225A1 (en) Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US7514151B2 (en) Insulating film and method for forming the same, and film-forming composition
JP3906916B2 (ja) 膜形成用組成物、膜形成方法および膜
US7011868B2 (en) Fluorine-free plasma curing process for porous low-k materials
US20030157340A1 (en) Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US7026053B2 (en) Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JP3941327B2 (ja) シリカ系膜の製造方法、シリカ系膜、絶縁膜および半導体装置
JP2005089699A (ja) 膜形成用組成物、膜の形成方法およびシリカ系膜

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000