KR20050084776A - 저저항 ｎ형 반도체 다이아몬드 및 그 제조 방법 - Google Patents

저저항 ｎ형 반도체 다이아몬드 및 그 제조 방법 Download PDF

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Publication number
KR20050084776A
KR20050084776A KR1020047013528A KR20047013528A KR20050084776A KR 20050084776 A KR20050084776 A KR 20050084776A KR 1020047013528 A KR1020047013528 A KR 1020047013528A KR 20047013528 A KR20047013528 A KR 20047013528A KR 20050084776 A KR20050084776 A KR 20050084776A
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KR
South Korea
Prior art keywords
diamond
lithium
type semiconductor
nitrogen
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020047013528A
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English (en)
Korean (ko)
Inventor
아끼히꼬 남바
다까히로 이마이
히사오 다께우찌
Original Assignee
스미토모덴키고교가부시키가이샤
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Publication of KR20050084776A publication Critical patent/KR20050084776A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020047013528A 2002-12-27 2003-12-22 저저항 ｎ형 반도체 다이아몬드 및 그 제조 방법 Withdrawn KR20050084776A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002379229A JP2004214264A (ja) 2002-12-27 2002-12-27 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
JPJP-P-2002-00379229 2002-12-27

Publications (1)

Publication Number Publication Date
KR20050084776A true KR20050084776A (ko) 2005-08-29

Family

ID=32708382

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047013528A Withdrawn KR20050084776A (ko) 2002-12-27 2003-12-22 저저항 ｎ형 반도체 다이아몬드 및 그 제조 방법

Country Status (9)

Country Link
US (1) US7255744B2 (https=)
EP (1) EP1577425A4 (https=)
JP (1) JP2004214264A (https=)
KR (1) KR20050084776A (https=)
CN (1) CN100337310C (https=)
AU (1) AU2003289501A1 (https=)
CA (1) CA2474909A1 (https=)
TW (1) TW200421455A (https=)
WO (1) WO2004061167A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2491242A1 (en) * 2003-10-29 2005-04-29 Sumitomo Electric Industries, Ltd. Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond
JP4742736B2 (ja) * 2005-08-10 2011-08-10 住友電気工業株式会社 ダイヤモンドへのドーパント原子決定方法
US8735907B2 (en) * 2009-07-22 2014-05-27 National Institute Of Advanced Industrial Science And Technology Ohmic electrode for use in a semiconductor diamond device
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
TWI446889B (zh) * 2011-10-20 2014-08-01 Univ Nat Cheng Kung 多功能手術裝置及包含其之手術系統
CN103103609B (zh) * 2013-03-05 2015-08-19 三门峡纵横超硬材料有限公司 N型金刚石半导体单晶及其生产方法
CN103952681B (zh) * 2014-04-23 2016-04-20 南京理工大学 一种锂氮共掺杂金刚石薄膜的制备方法
US10316430B2 (en) 2014-07-15 2019-06-11 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for manufacturing single crystal diamond, and tool containing single crystal diamond
CN106661758A (zh) * 2014-08-08 2017-05-10 住友电气工业株式会社 制造金刚石的方法、金刚石、金刚石复合基板、金刚石接合基板和工具
US9484474B1 (en) * 2015-07-02 2016-11-01 Uchicago Argonne, Llc Ultrananocrystalline diamond contacts for electronic devices
KR102626684B1 (ko) 2015-07-22 2024-01-17 스미토모덴키고교가부시키가이샤 단결정 다이아몬드재, 단결정 다이아몬드칩 및 천공 공구
CN117070917A (zh) * 2023-09-11 2023-11-17 季华实验室 一种掺杂金刚石制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112697A (ja) * 1983-11-18 1985-06-19 Agency Of Ind Science & Technol ダイヤモンドの光化学的堆積合成方法およびその装置
JPS61236691A (ja) * 1985-04-09 1986-10-21 Nec Corp ダイヤモンドの気相合成法
JPS62212297A (ja) 1986-03-11 1987-09-18 Toshiba Corp 半導体ダイヤモンドの製造方法
JPS63288991A (ja) * 1987-05-20 1988-11-25 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPH01261299A (ja) * 1988-04-11 1989-10-18 Kawasaki Steel Corp ダイヤモンド若しくはダイヤモンド状の薄膜の形成方法
JPH03205398A (ja) 1989-12-30 1991-09-06 Canon Inc ダイヤモンドの製造方法
WO1992001314A1 (en) * 1990-07-06 1992-01-23 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
JPH04175295A (ja) 1990-11-07 1992-06-23 Canon Inc 半導体ダイヤモンドの製造方法
JPH04174517A (ja) 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same
JP3374866B2 (ja) 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3334286B2 (ja) 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
US6887144B2 (en) * 1996-11-12 2005-05-03 Diamond Innovations, Inc. Surface impurity-enriched diamond and method of making
JPH10247624A (ja) * 1997-03-05 1998-09-14 Asahi Chem Ind Co Ltd ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法
JPH1154443A (ja) * 1997-08-07 1999-02-26 New Japan Radio Co Ltd Ｎ型ダイアモンド半導体の製造方法
JPH11214321A (ja) 1998-01-27 1999-08-06 Sumitomo Electric Ind Ltd ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置
US6414338B1 (en) * 1998-11-30 2002-07-02 Sandia National Laboratories n-Type diamond and method for producing same
JP2001035804A (ja) * 1999-07-21 2001-02-09 Agency Of Ind Science & Technol ダイヤモンド半導体およびその作製方法
CA2491242A1 (en) * 2003-10-29 2005-04-29 Sumitomo Electric Industries, Ltd. Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond

Also Published As

Publication number Publication date
EP1577425A1 (en) 2005-09-21
AU2003289501A1 (en) 2004-07-29
US20050217561A1 (en) 2005-10-06
US7255744B2 (en) 2007-08-14
TW200421455A (en) 2004-10-16
CN1692186A (zh) 2005-11-02
JP2004214264A (ja) 2004-07-29
CN100337310C (zh) 2007-09-12
WO2004061167A1 (ja) 2004-07-22
EP1577425A4 (en) 2007-02-28
CA2474909A1 (en) 2004-07-22
TWI302342B (https=) 2008-10-21
HK1076494A1 (zh) 2006-01-20

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