KR20050079860A - 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법 - Google Patents

마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법 Download PDF

Info

Publication number
KR20050079860A
KR20050079860A KR1020040008174A KR20040008174A KR20050079860A KR 20050079860 A KR20050079860 A KR 20050079860A KR 1020040008174 A KR1020040008174 A KR 1020040008174A KR 20040008174 A KR20040008174 A KR 20040008174A KR 20050079860 A KR20050079860 A KR 20050079860A
Authority
KR
South Korea
Prior art keywords
microwave
plasma
resonators
process chamber
dielectric window
Prior art date
Application number
KR1020040008174A
Other languages
English (en)
Korean (ko)
Inventor
톨마체프유리
마동준
김대일
나발라세르기야고블레비키
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020040008174A priority Critical patent/KR20050079860A/ko
Priority to US10/931,132 priority patent/US20050173069A1/en
Priority to CNA2004100786896A priority patent/CN1652661A/zh
Priority to JP2005011855A priority patent/JP2005235755A/ja
Publication of KR20050079860A publication Critical patent/KR20050079860A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020040008174A 2004-02-07 2004-02-07 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법 KR20050079860A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020040008174A KR20050079860A (ko) 2004-02-07 2004-02-07 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
US10/931,132 US20050173069A1 (en) 2004-02-07 2004-09-01 Plasma generating apparatus and plasma processing apparatus
CNA2004100786896A CN1652661A (zh) 2004-02-07 2004-09-17 等离子体产生设备及等离子体处理设备
JP2005011855A JP2005235755A (ja) 2004-02-07 2005-01-19 マイクロウェーブ供給装置、それを用いたプラズマ工程装置及びプラズマ工程方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040008174A KR20050079860A (ko) 2004-02-07 2004-02-07 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법

Publications (1)

Publication Number Publication Date
KR20050079860A true KR20050079860A (ko) 2005-08-11

Family

ID=34825119

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040008174A KR20050079860A (ko) 2004-02-07 2004-02-07 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법

Country Status (4)

Country Link
US (1) US20050173069A1 (zh)
JP (1) JP2005235755A (zh)
KR (1) KR20050079860A (zh)
CN (1) CN1652661A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190127989A (ko) * 2017-04-11 2019-11-13 어플라이드 머티어리얼스, 인코포레이티드 모듈식 마이크로파 소스들을 사용한 대칭적인 그리고 불규칙한 형상의 플라즈마들

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4487885B2 (ja) 2005-08-16 2010-06-23 パナソニック株式会社 光ディスク装置
JP4677918B2 (ja) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
JP2009302324A (ja) * 2008-06-13 2009-12-24 Tokyo Electron Ltd ガスリング、半導体基板処理装置および半導体基板処理方法
US8367473B2 (en) * 2009-05-13 2013-02-05 Advanced Semiconductor Engineering, Inc. Substrate having single patterned metal layer exposing patterned dielectric layer, chip package structure including the substrate, and manufacturing methods thereof
TWI465158B (zh) * 2011-01-12 2014-12-11 Ind Tech Res Inst 微波電漿激發裝置
JP2014026773A (ja) * 2012-07-25 2014-02-06 Tokyo Electron Ltd プラズマ処理装置
JP2014160557A (ja) * 2013-02-19 2014-09-04 Tokyo Electron Ltd プラズマ処理装置
JP6178140B2 (ja) * 2013-07-10 2017-08-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波供給方法
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
KR102619949B1 (ko) 2016-05-16 2024-01-03 삼성전자주식회사 안테나, 그를 포함하는 마이크로파 플라즈마 소스, 플라즈마 처리 장치
US10748745B2 (en) 2016-08-16 2020-08-18 Applied Materials, Inc. Modular microwave plasma source
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US11037764B2 (en) 2017-05-06 2021-06-15 Applied Materials, Inc. Modular microwave source with local Lorentz force
US11081317B2 (en) 2018-04-20 2021-08-03 Applied Materials, Inc. Modular high-frequency source
US11393661B2 (en) 2018-04-20 2022-07-19 Applied Materials, Inc. Remote modular high-frequency source
US10504699B2 (en) 2018-04-20 2019-12-10 Applied Materials, Inc. Phased array modular high-frequency source
KR102524258B1 (ko) * 2018-06-18 2023-04-21 삼성전자주식회사 온도 조절 유닛, 온도 측정 유닛 및 이들을 포함하는 플라즈마 처리 장치
JP6991934B2 (ja) * 2018-07-02 2022-01-13 株式会社日立ハイテク プラズマ処理装置
JP7154105B2 (ja) * 2018-10-25 2022-10-17 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
JP7184254B2 (ja) * 2018-12-06 2022-12-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7035277B2 (ja) * 2020-01-27 2022-03-14 株式会社日立ハイテク プラズマ処理装置
KR20230175017A (ko) * 2022-06-22 2023-12-29 주식회사 나이스플라즈마 스월 모션 사이드 가스 피드가 구비된 플라즈마 챔버
CN115125522A (zh) * 2022-07-29 2022-09-30 龙鳞(深圳)新材料科技有限公司 一种镀膜系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4729341A (en) * 1985-09-18 1988-03-08 Energy Conversion Devices, Inc. Method and apparatus for making electrophotographic devices
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
DE4114108C1 (zh) * 1991-04-30 1991-12-19 Schott Glaswerke, 6500 Mainz, De
EP0478283B1 (en) * 1990-09-26 1996-12-27 Hitachi, Ltd. Microwave plasma processing method and apparatus
KR100321325B1 (ko) * 1993-09-17 2002-06-20 가나이 쓰도무 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치
KR970071945A (ko) * 1996-02-20 1997-11-07 가나이 쯔도무 플라즈마처리방법 및 장치
EP0880164B1 (en) * 1997-05-22 2002-08-07 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
WO1999049705A1 (fr) * 1998-03-20 1999-09-30 Tokyo Electron Limited Dispositif de traitement plasmique
US6652709B1 (en) * 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP2002343993A (ja) * 2001-03-15 2002-11-29 Canon Inc 薄膜多結晶太陽電池及びその形成方法
JP4727057B2 (ja) * 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
US20030178143A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Plasma reactor with plural independently driven concentric coaxial waveguides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190127989A (ko) * 2017-04-11 2019-11-13 어플라이드 머티어리얼스, 인코포레이티드 모듈식 마이크로파 소스들을 사용한 대칭적인 그리고 불규칙한 형상의 플라즈마들

Also Published As

Publication number Publication date
JP2005235755A (ja) 2005-09-02
US20050173069A1 (en) 2005-08-11
CN1652661A (zh) 2005-08-10

Similar Documents

Publication Publication Date Title
KR20050079860A (ko) 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
JP3691528B2 (ja) 高密度プラズマｃｖｄ及びエッチングリアクタ
KR101011580B1 (ko) 이온 분포의 자기 제어에 의해 외부적으로 여기된토로이드형 플라즈마 소스
KR101198439B1 (ko) 플라즈마 처리 장치용 측면 ｒｆ 코일 및 측면 히터
US6417111B2 (en) Plasma processing apparatus
TWI502619B (zh) 用於電漿處理設備之電極、電漿處理設備、以及使用電漿處理設備產生電漿的方法
KR20000077025A (ko) 플라즈마처리장치 및 플라즈마처리방법
KR102523730B1 (ko) 이중 주파수 표면파 플라즈마 소스
CN111183504B (zh) 制造过程中的超局部和等离子体均匀性控制
KR101353684B1 (ko) 플라즈마 발생장치 및 방법
JP2000260747A (ja) 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
JPH09289099A (ja) プラズマ処理方法および装置
JP2000357683A (ja) プラズマ処理装置及びプラズマ処理方法
KR100878467B1 (ko) 반도체 기판 처리장치
KR102498944B1 (ko) 유기 재료들의 자가 제한 에칭을 수행하기 위한 프로세스
JP6991934B2 (ja) プラズマ処理装置
JPH02138735A (ja) プラズマ処理装置及びその方法
JP2020047499A (ja) プラズマ処理方法およびプラズマ処理装置
KR100914398B1 (ko) 플라즈마 기판 처리 장치
JPS63263725A (ja) プラズマ処理装置
JP3732287B2 (ja) プラズマ処理装置
JP4204799B2 (ja) プラズマ処理装置
KR101040541B1 (ko) 플라즈마 발생용 하이브리드 안테나
JP2675000B2 (ja) プラズマ処理装置
KR102409167B1 (ko) 플라즈마 발생장치

Legal Events

Date Code Title Description
A201 Request for examination
SUBM Submission of document of abandonment before or after decision of registration