KR20050065565A - 가요성 기제 물질 상에 저항기를 제조하는 방법 - Google Patents
가요성 기제 물질 상에 저항기를 제조하는 방법 Download PDFInfo
- Publication number
- KR20050065565A KR20050065565A KR1020057005388A KR20057005388A KR20050065565A KR 20050065565 A KR20050065565 A KR 20050065565A KR 1020057005388 A KR1020057005388 A KR 1020057005388A KR 20057005388 A KR20057005388 A KR 20057005388A KR 20050065565 A KR20050065565 A KR 20050065565A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- flexible substrate
- resistor
- metal
- activated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000463 material Substances 0.000 title description 41
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 229920001721 polyimide Polymers 0.000 claims abstract description 15
- 239000004642 Polyimide Substances 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000000992 sputter etching Methods 0.000 claims abstract 2
- 239000010936 titanium Substances 0.000 claims description 49
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 123
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 238000005240 physical vapour deposition Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000000873 masking effect Effects 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- -1 GaAlAs Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 229910021357 chromium silicide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C3/00—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids
- H01C3/06—Flexible or folding resistors, whereby such a resistor can be looped or collapsed upon itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1136—Conversion of insulating material into conductive material, e.g. by pyrolysis
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/261,052 | 2002-09-30 | ||
| US10/261,052 US6709944B1 (en) | 2002-09-30 | 2002-09-30 | Techniques for fabricating a resistor on a flexible base material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050065565A true KR20050065565A (ko) | 2005-06-29 |
Family
ID=31977937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057005388A Ceased KR20050065565A (ko) | 2002-09-30 | 2003-08-28 | 가요성 기제 물질 상에 저항기를 제조하는 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6709944B1 (enExample) |
| EP (1) | EP1550140A1 (enExample) |
| JP (1) | JP2006501670A (enExample) |
| KR (1) | KR20050065565A (enExample) |
| CN (1) | CN100477021C (enExample) |
| AU (1) | AU2003268263A1 (enExample) |
| WO (1) | WO2004032154A1 (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100040896A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
| US20100044079A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
| US20100038121A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
| US20080035370A1 (en) * | 1999-08-27 | 2008-02-14 | Lex Kosowsky | Device applications for voltage switchable dielectric material having conductive or semi-conductive organic material |
| US20100044080A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
| US20100038119A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
| US7825491B2 (en) * | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
| WO2001017320A1 (en) * | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
| KR100674824B1 (ko) | 2004-12-08 | 2007-01-25 | 삼성전기주식회사 | 자기저항소자 제조방법 |
| EP1750309A3 (en) * | 2005-08-03 | 2009-07-29 | Samsung Electro-mechanics Co., Ltd | Light emitting device having protection element |
| US7923844B2 (en) * | 2005-11-22 | 2011-04-12 | Shocking Technologies, Inc. | Semiconductor devices including voltage switchable materials for over-voltage protection |
| US20100263200A1 (en) * | 2005-11-22 | 2010-10-21 | Lex Kosowsky | Wireless communication device using voltage switchable dielectric material |
| US8222116B2 (en) | 2006-03-03 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20080029405A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having conductive or semi-conductive organic material |
| US7981325B2 (en) * | 2006-07-29 | 2011-07-19 | Shocking Technologies, Inc. | Electronic device for voltage switchable dielectric material having high aspect ratio particles |
| US20080032049A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having high aspect ratio particles |
| EP2084748A4 (en) * | 2006-09-24 | 2011-09-28 | Shocking Technologies Inc | VOLTAGE GRADUATED RESPONSE VOLTAGE-SWITCHABLE DIELECTRIC MATERIAL, AND METHOD FOR MANUFACTURING THE SAME |
| US20120119168A9 (en) * | 2006-11-21 | 2012-05-17 | Robert Fleming | Voltage switchable dielectric materials with low band gap polymer binder or composite |
| JP5374063B2 (ja) * | 2007-03-28 | 2013-12-25 | 三菱重工業株式会社 | 金属溶解用ルツボ及びその表面処理方法 |
| US7793236B2 (en) * | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
| US20100006884A1 (en) * | 2007-08-07 | 2010-01-14 | Epistar Corporation | Light Emitting Device and Manufacturing Method Therof |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US8203421B2 (en) * | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
| US7727808B2 (en) * | 2008-06-13 | 2010-06-01 | General Electric Company | Ultra thin die electronic package |
| US20100047535A1 (en) * | 2008-08-22 | 2010-02-25 | Lex Kosowsky | Core layer structure having voltage switchable dielectric material |
| US20100065785A1 (en) * | 2008-09-17 | 2010-03-18 | Lex Kosowsky | Voltage switchable dielectric material containing boron compound |
| JP2012504870A (ja) * | 2008-09-30 | 2012-02-23 | ショッキング テクノロジーズ インコーポレイテッド | 導電コアシェル粒子を含有する電圧で切替可能な誘電体材料 |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
| US8362871B2 (en) * | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
| US8272123B2 (en) | 2009-01-27 | 2012-09-25 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
| US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| KR101679099B1 (ko) | 2009-03-26 | 2016-11-23 | 쇼킹 테크놀로지스 인코포레이티드 | 전압 스위칭형 유전 물질을 갖는 소자 |
| US9053844B2 (en) * | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
| KR101065409B1 (ko) * | 2009-11-04 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기 발광 조명 장치 |
| US20110198544A1 (en) * | 2010-02-18 | 2011-08-18 | Lex Kosowsky | EMI Voltage Switchable Dielectric Materials Having Nanophase Materials |
| US9224728B2 (en) * | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
| US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
| US9320135B2 (en) * | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
| CN102324289B (zh) * | 2011-05-31 | 2014-05-14 | 四平市吉华高新技术有限公司 | 厚膜电阻板及其制造方法 |
| TWI497535B (zh) | 2011-07-28 | 2015-08-21 | Cyntec Co Ltd | 具有軟性材料層之微電阻元件及其製造方法 |
| CN102903467B (zh) * | 2011-07-29 | 2016-04-06 | 乾坤科技股份有限公司 | 具有软性材料层的微电阻元件及其制造方法 |
| DE102012208730A1 (de) * | 2012-05-24 | 2013-11-28 | Osram Opto Semiconductors Gmbh | Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung |
| DE102015000380A1 (de) * | 2015-01-13 | 2016-07-14 | Wabco Gmbh | Sensoreinheit, Sensier- und Auswertevorrichtung mit einer derartigen Sensoreinheit sowie Kraftfahrzeug oder Anhänger damit und Verfahren zum Schützen einer Auswerteeinrichtung |
| CN111780653B (zh) * | 2020-06-09 | 2022-01-07 | 中国电子科技集团公司第四十九研究所 | 基于碳膜纳米导电材料的电阻体及其制备方法 |
| US11949169B2 (en) * | 2021-02-26 | 2024-04-02 | KYOCERA AVX Components Corporation | High frequency and high power thin-film component |
| CN113410382B (zh) * | 2021-06-15 | 2022-11-29 | 西安微电子技术研究所 | 一种铬硅系薄膜电阻及其制备方法 |
| CN114256063A (zh) * | 2021-12-16 | 2022-03-29 | 上海华虹宏力半导体制造有限公司 | 一种图形轮廓质量提高方法 |
| USD1046802S1 (en) * | 2022-08-09 | 2024-10-15 | Richardson Electronics, Ltd. | Resistor |
| USD1050042S1 (en) * | 2022-08-09 | 2024-11-05 | Richardson Electronics, Ltd. | Resistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1319765A (en) * | 1969-10-15 | 1973-06-06 | Atomic Energy Authority Uk | Resistive elements |
| US3966578A (en) * | 1974-01-17 | 1976-06-29 | Ceramic Magnetics, Inc. | Method of making thin film thermistor |
| US4485297A (en) * | 1980-08-28 | 1984-11-27 | Flexwatt Corporation | Electrical resistance heater |
| US5250388A (en) * | 1988-05-31 | 1993-10-05 | Westinghouse Electric Corp. | Production of highly conductive polymers for electronic circuits |
| US5065502A (en) * | 1988-09-30 | 1991-11-19 | Lucas Duralith Art Corporation | Method for modifying electrical performance characteristics of circuit paths on circuit panels |
| KR900014625A (ko) * | 1989-03-20 | 1990-10-24 | 미다 가쓰시게 | 금속/유기 고분자 합성수지 복합체 및 이의 제조방법 |
| EP0562571B1 (en) * | 1992-03-25 | 1996-07-17 | Molex Incorporated | Printed circuit module |
| JP2816629B2 (ja) * | 1992-06-12 | 1998-10-27 | シャープ株式会社 | 抵抗内蔵型発光装置 |
| US5753523A (en) * | 1994-11-21 | 1998-05-19 | Brewer Science, Inc. | Method for making airbridge from ion-implanted conductive polymers |
| TW340944B (en) * | 1996-03-11 | 1998-09-21 | Matsushita Electric Industrial Co Ltd | Resistor and method of making the same |
| WO2001017320A1 (en) * | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
| US6936855B1 (en) * | 2002-01-16 | 2005-08-30 | Shane Harrah | Bendable high flux LED array |
| US6932518B2 (en) * | 2002-03-19 | 2005-08-23 | Finisar Corporation | Circuit board having traces with distinct transmission impedances |
-
2002
- 2002-09-30 US US10/261,052 patent/US6709944B1/en not_active Expired - Lifetime
-
2003
- 2003-08-28 EP EP03749217A patent/EP1550140A1/en not_active Withdrawn
- 2003-08-28 JP JP2004541496A patent/JP2006501670A/ja active Pending
- 2003-08-28 CN CNB038250748A patent/CN100477021C/zh not_active Expired - Fee Related
- 2003-08-28 KR KR1020057005388A patent/KR20050065565A/ko not_active Ceased
- 2003-08-28 AU AU2003268263A patent/AU2003268263A1/en not_active Abandoned
- 2003-08-28 WO PCT/US2003/027112 patent/WO2004032154A1/en not_active Ceased
- 2003-11-18 US US10/716,143 patent/US7158383B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040063294A1 (en) | 2004-04-01 |
| US7158383B2 (en) | 2007-01-02 |
| CN100477021C (zh) | 2009-04-08 |
| US6709944B1 (en) | 2004-03-23 |
| JP2006501670A (ja) | 2006-01-12 |
| CN1695209A (zh) | 2005-11-09 |
| EP1550140A1 (en) | 2005-07-06 |
| AU2003268263A1 (en) | 2004-04-23 |
| WO2004032154A1 (en) | 2004-04-15 |
| US20040114336A1 (en) | 2004-06-17 |
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