KR20050030600A - 고체 발광 소자와 그 제조 방법 및 프로젝터 - Google Patents
고체 발광 소자와 그 제조 방법 및 프로젝터 Download PDFInfo
- Publication number
- KR20050030600A KR20050030600A KR1020040076964A KR20040076964A KR20050030600A KR 20050030600 A KR20050030600 A KR 20050030600A KR 1020040076964 A KR1020040076964 A KR 1020040076964A KR 20040076964 A KR20040076964 A KR 20040076964A KR 20050030600 A KR20050030600 A KR 20050030600A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- light emitting
- chip
- optical path
- light
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims description 54
- 239000011347 resin Substances 0.000 claims description 50
- 229920005989 resin Polymers 0.000 claims description 50
- 239000007788 liquid Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 21
- 230000000873 masking effect Effects 0.000 claims description 3
- 239000005871 repellent Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000007599 discharging Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
- H04N9/315—Modulator illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Projection Apparatus (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
- 전류가 주입되는 것에 의해 발광하는 고체 발광 소자 칩과, 해당 고체 발광 소자 칩에 전류를 주입하기 위한 전극을 구비하고, 상기 전극이 상기 고체 발광 소자 칩의 출사면에 배치되는 고체 발광 소자로서,상기 전극이 형성되는 영역인 전극 형성 영역을 시각적으로 마스킹하는 광로 변경 수단을 상기 고체 발광 소자 칩의 출사면에 구비하는 것을 특징으로 하는 고체 발광 소자.
- 제 1 항에 있어서,상기 광로 변경 수단은 굴절에 의해 광로를 변경하는 것을 특징으로 하는 고체 발광 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 광로 변경 수단은 상기 전극 형성 영역에 대응하는 골짜기부를 갖는 투광성 부재에 의해 형성되는 것을 특징으로 하는 고체 발광 소자.
- 제 3 항에 있어서,상기 투광성 부재는 수지인 것을 특징으로 하는 고체 발광 소자.
- 제 1 항에 있어서,상기 광로 변경 수단은 반사에 의해 광로를 변경하는 것을 특징으로 하는 고체 발광 소자.
- 제 5 항에 있어서,상기 광로 변경 수단은 상기 전극 상에 형성되는 반사경인 것을 특징으로 하는 고체 발광 소자.
- 제 6 항에 있어서,상기 반사경과 상기 전극은 동일 부재에 의해 일체로 형성되어 있는 것을 특징으로 하는 고체 발광 소자.
- 청구항 1에 기재된 고체 발광 소자를 광원으로서 구비하는 것을 특징으로 하는 프로젝터.
- 전류가 주입되는 것에 의해 발광하는 고체 발광 소자 칩과, 해당 고체 발광 소자 칩에 전류를 주입하기 위한 전극을 구비하고, 상기 전극이 상기 고체 발광 소자 칩의 출사면에 배치되는 고체 발광 소자를 제조하는 방법으로서,상기 전극이 형성되는 영역인 전극 형성 영역을 발액(liquid-repellent)화하는 공정과,상기 고체 발광 소자 칩의 출사면에 액상 수지를 배치하는 공정과,상기 액상 수지를 경화시키는 공정을 갖는 것을 특징으로 하는 고체 발광 소자의 제조 방법.
- 제 9 항에 있어서,상기 액상 수지는 액적 토출법에 의해 배치되는 것을 특징으로 하는 고체 발광 소자의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003333359A JP4042668B2 (ja) | 2003-09-25 | 2003-09-25 | 固体発光素子とその製造方法並びにプロジェクタ |
JPJP-P-2003-00333359 | 2003-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050030600A true KR20050030600A (ko) | 2005-03-30 |
KR100641516B1 KR100641516B1 (ko) | 2006-11-01 |
Family
ID=34461388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040076964A KR100641516B1 (ko) | 2003-09-25 | 2004-09-24 | 고체 발광 소자와 그 제조 방법 및 프로젝터 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050093014A1 (ko) |
JP (1) | JP4042668B2 (ko) |
KR (1) | KR100641516B1 (ko) |
CN (1) | CN100445867C (ko) |
TW (1) | TWI286221B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006330282A (ja) * | 2005-05-25 | 2006-12-07 | Sony Corp | 画像投影装置及び画像投影方法 |
KR100722590B1 (ko) * | 2005-08-30 | 2007-05-28 | 삼성전기주식회사 | 백라이트용 led 렌즈 |
EP1813857A1 (de) | 2006-01-27 | 2007-08-01 | Lucea AG | Lichtquelle |
KR100883075B1 (ko) * | 2007-03-02 | 2009-02-10 | 엘지전자 주식회사 | 전계발광소자 |
KR100930195B1 (ko) * | 2007-12-20 | 2009-12-07 | 삼성전기주식회사 | 전극 패턴을 구비한 질화물 반도체 발광소자 |
EP2704220B1 (en) * | 2011-04-26 | 2018-03-07 | Sanyu Rec Co., Ltd. | Method and apparatus for manufacturing optical device |
KR20120131955A (ko) * | 2011-05-27 | 2012-12-05 | 삼성전자주식회사 | 발광장치 |
TWI459124B (zh) * | 2012-09-10 | 2014-11-01 | Shinyoptics Corp | 適用於投影系統之發光二極體 |
JP6234572B2 (ja) * | 2014-06-26 | 2017-11-22 | 京セラ株式会社 | 撮像装置および車両 |
CN107088931A (zh) * | 2017-05-08 | 2017-08-25 | 贵港市鑫宏木业有限公司 | 防虫木胶合板的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5932073B2 (ja) | 1979-06-01 | 1984-08-06 | 三菱電機株式会社 | 発光ダイオ−ドおよびその製造方法 |
JPS6333879A (ja) | 1986-07-28 | 1988-02-13 | Mitsubishi Cable Ind Ltd | 発光ダイオ−ド構造物 |
JP2000067449A (ja) * | 1998-08-18 | 2000-03-03 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
DE10101554A1 (de) * | 2001-01-15 | 2002-08-01 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode |
JP2003186110A (ja) * | 2001-12-21 | 2003-07-03 | Nec Viewtechnology Ltd | Led照明式dmdプロジェクター及びその光学系 |
KR200325425Y1 (ko) | 2003-05-19 | 2003-09-03 | 서울반도체 주식회사 | 발광 다이오드 표시 장치 |
-
2003
- 2003-09-25 JP JP2003333359A patent/JP4042668B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-10 TW TW093127509A patent/TWI286221B/zh not_active IP Right Cessation
- 2004-09-16 US US10/941,905 patent/US20050093014A1/en not_active Abandoned
- 2004-09-24 KR KR1020040076964A patent/KR100641516B1/ko active IP Right Grant
- 2004-09-27 CN CNB2004100810039A patent/CN100445867C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20050093014A1 (en) | 2005-05-05 |
JP2005101294A (ja) | 2005-04-14 |
KR100641516B1 (ko) | 2006-11-01 |
TWI286221B (en) | 2007-09-01 |
TW200519409A (en) | 2005-06-16 |
JP4042668B2 (ja) | 2008-02-06 |
CN100445867C (zh) | 2008-12-24 |
CN1601371A (zh) | 2005-03-30 |
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