KR20050018660A - 프로그램가능 장치에 관한 소자를 형성하는 방법 및이들을 포함하는 장치 및 시스템 - Google Patents
프로그램가능 장치에 관한 소자를 형성하는 방법 및이들을 포함하는 장치 및 시스템Info
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- KR20050018660A KR20050018660A KR10-2004-7016895A KR20047016895A KR20050018660A KR 20050018660 A KR20050018660 A KR 20050018660A KR 20047016895 A KR20047016895 A KR 20047016895A KR 20050018660 A KR20050018660 A KR 20050018660A
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- adhesive
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- conductor
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- 238000000034 method Methods 0.000 claims abstract description 38
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
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- 125000006850 spacer group Chemical group 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 16
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
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- 230000015572 biosynthetic process Effects 0.000 description 10
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- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
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- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- -1 that is Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005537 GaSeTe Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910018219 SeTe Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- 229910004284 Te81Ge15Sb2S2 Inorganic materials 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- ZXQYGBMAQZUVMI-GCMPRSNUSA-N gamma-cyhalothrin Chemical compound CC1(C)[C@@H](\C=C(/Cl)C(F)(F)F)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 ZXQYGBMAQZUVMI-GCMPRSNUSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- FESBVLZDDCQLFY-UHFFFAOYSA-N sete Chemical compound [Te]=[Se] FESBVLZDDCQLFY-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- H—ELECTRICITY
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (21)
- 기판 상에 형성되는 콘택트 상에 유전체를 형성하는 단계와,상기 유전체를 통과하여 상기 콘택트를 노출시키는 개구부를 형성하는 단계와,상기 개구부 내에서, 상기 콘택트 상에 전극을 형성하는 단계와,상기 유전체 및 상기 전극 상에 접착제를 형성하는 단계와,상기 전극의 일부분을 노출시키도록 상기 접착제를 패터닝하는 단계와,상기 접착제 및 상기 전극 상에 프로그램가능 물질을 형성하는 단계와,상기 프로그램가능 물질에 대한 도전체를 형성하는 단계를 포함하는 방법.
- 제 1 항에 있어서,상기 접착제, 상기 프로그램가능 물질 및 상기 도전체를 동시에 패터닝하는 단계를 더 포함하는 방법.
- 제 1 항에 있어서,접착제를 형성하는 단계는 티타늄과 폴리실리콘 중 적어도 하나를 형성하는 단계를 포함하고 프로그램가능 물질을 형성하는 단계는 칼코겐화물 메모리 소자를 형성하는 단계를 포함하는 방법.
- 기판 상의 콘택트와,상기 콘택트까지 연장하는 개구부를 갖는, 상기 콘택트 상의 유전체와,상기 개구부 내의, 상기 콘택트 상의 전극과,상기 유전체 상의 접착제와,상기 접착제 및 상기 전극 상의 프로그램가능 물질과,상기 프로그램가능 물질에 대한 도전체를 포함하는 장치.
- 제 4 항에 있어서,상기 접착제, 상기 프로그램가능 물질 및 상기 도전체는 동시에 패터닝되는 장치.
- 제 4 항에 있어서,상기 접착제는 티타늄 및 폴리실리콘 중 적어도 하나를 포함하고 상기 프로그램가능 물질은 칼코겐화물 메모리 소자를 포함하는 장치.
- 마이크로프로세서와,입/출력(I/O) 포트와,기판 상의 콘택트와, 상기 콘택트까지 연장하는 개구부를 갖는 상기 콘택트 상의 유전체와, 상기 개구부 내 및 상기 콘택 상의 전극과, 상기 유전체 상의 접착제와, 상기 접착제 및 상기 전극 상의 프로그램가능 물질, 및 상기 프로그램가능 물질에 대한 도전체를 포함하는 메모리를 포함하되,상기 마이크로프로세서, 상기 I/O 포트 및 상기 메모리는 데이터 버스, 어드레스 버스 및 제어 버스에 의해 연결되는시스템.
- 제 7 항에 있어서,상기 접착제, 상기 프로그램가능 물질 및 상기 도전체는 동시에 패터닝되는 시스템.
- 제 7 항에 있어서,상기 접착제는 티타늄 및 폴리실리콘 중 적어도 하나를 포함하고, 상기 프로그램가능 물질은 칼코겐화물 메모리 소자를 포함하는 시스템.
- 기판 상에 형성된 콘택트 상에 유전체를 형성하는 단계와,상기 유전체 상에 접착제를 형성하는 단계와,상기 접착제 및 상기 유전체를 통과하여 상기 콘택트를 노출시키는 개구부를 형성하는 단계와,상기 접착제 및 상기 콘택트의 제 1 부분 상에 프로그램가능 물질을 형성하는 단계와,상기 프로그램가능 물질에 대한 도전체를 형성하는 단계를 포함하는 방법.
- 제 10 항에 있어서,상기 접착제, 상기 프로그램가능 물질 및 상기 도전체를 동시에 패터닝하는 단계를 더 포함하는 방법.
- 제 10 항에 있어서,접착제를 형성하는 단계는 티타늄 및 폴리실리콘 중 적어도 하나를 형성하는 단계를 포함하고 프로그램가능 물질을 형성하는 단계는 칼코겐화물 메모리 소자를 형성하는 단계를 포함하는 방법.
- 제 10 항에 있어서,상기 콘택트의 제 2 부분 상에 적어도 하나의 스페이서를 형성하는 단계를 더 포함하는 방법.
- 기판 상의 콘택트 상의 유전체와,상기 콘택트를 노출시키는 개구부를 갖는 상기 유전체 상의 접착제와,상기 접착제 및 상기 콘택트의 제 1 부분 상의 프로그램가능 물질과,상기 프로그램가능 물질에 대한 도전체를 포함하는 장치.
- 제 14 항에 있어서,상기 접착제, 상기 프로그램가능 물질 및 상기 도전체는 동시에 패터닝되는 장치.
- 제 14 항에 있어서,상기 접착제는 티타늄 및 폴리실리콘 중 적어도 하나를 포함하고 프로그램가능 물질은 칼코겐화물 메모리 소자를 포함하는 장치.
- 제 14 항에 있어서,상기 콘택트의 제 2 부분 상에 적어도 하나의 스페이서를 더 포함하는 장치.
- 마이크로프로세서와,입/출력(I/O) 포트와,기판 상의 콘택트와, 상기 콘택트 상의 유전체와, 상기 콘택트를 노출시키는 개구부를 갖는 상기 유전체 상의 접착제와, 상기 접착제 및 상기 콘택트의 제 1 부분 상의 프로그램가능 물질, 및 상기 프로그램가능 물질에 대한 도전체를 포함하는 메모리를 포함하되,상기 마이크로프로세서, 상기 I/O 포트 및 상기 메모리는 데이터 버스, 어드레스 버스 및 제어 버스에 의해 연결되는시스템.
- 제 18 항에 있어서,상기 접착제, 상기 프로그램가능 물질 및 상기 도전체는 동시에 패터닝되는 시스템.
- 제 18 항에 있어서,상기 접착제는 티타늄 및 폴리실리콘 중 적어도 하나를 포함하고, 상기 프로그램가능 물질은 칼코겐화물 메모리 소자를 포함하는 시스템.
- 제 18 항에 있어서,상기 콘택트의 제 2 부분 상에 적어도 하나의 스페이서를 더 포함하는 시스템.
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PCT/US2002/025997 WO2004017438A1 (en) | 2002-08-14 | 2002-08-14 | Adhesive material for programmable device |
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KR20050018660A true KR20050018660A (ko) | 2005-02-23 |
KR100675989B1 KR100675989B1 (ko) | 2007-01-29 |
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KR (1) | KR100675989B1 (ko) |
CN (1) | CN100385702C (ko) |
AU (1) | AU2002323170A1 (ko) |
DE (1) | DE10297692B4 (ko) |
WO (1) | WO2004017438A1 (ko) |
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US8524599B2 (en) * | 2011-03-17 | 2013-09-03 | Micron Technology, Inc. | Methods of forming at least one conductive element and methods of forming a semiconductor structure |
US8941432B2 (en) * | 2012-08-31 | 2015-01-27 | Advanced Micro Devices, Inc. | Transitioning between resonant clocking mode and conventional clocking mode |
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US6222212B1 (en) * | 1994-01-27 | 2001-04-24 | Integrated Device Technology, Inc. | Semiconductor device having programmable interconnect layers |
US5903041A (en) * | 1994-06-21 | 1999-05-11 | Aptix Corporation | Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap |
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US6140191A (en) * | 1998-09-21 | 2000-10-31 | Advanced Micro Devices, Inc. | Method of making high performance MOSFET with integrated simultaneous formation of source/drain and gate regions |
US6569705B2 (en) * | 2000-12-21 | 2003-05-27 | Intel Corporation | Metal structure for a phase-change memory device |
US6770531B2 (en) * | 2001-06-30 | 2004-08-03 | Intel Corporation | Adhesive material for programmable device |
US6545287B2 (en) * | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
US6861267B2 (en) * | 2001-09-17 | 2005-03-01 | Intel Corporation | Reducing shunts in memories with phase-change material |
EP1318552A1 (en) * | 2001-12-05 | 2003-06-11 | STMicroelectronics S.r.l. | Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
US6512241B1 (en) * | 2001-12-31 | 2003-01-28 | Intel Corporation | Phase change material memory device |
DE60220015T2 (de) * | 2002-02-20 | 2008-01-10 | Stmicroelectronics S.R.L., Agrate Brianza | Kontaktstruktur, Phasenwechsel-Speicherzelle und deren Herstellungsverfahren mit Elimination von Doppelkontakten |
EP1339110B1 (en) * | 2002-02-20 | 2008-05-28 | STMicroelectronics S.r.l. | Phase change memory cell and manufacturing method thereof using minitrenches |
-
2002
- 2002-08-14 DE DE10297692T patent/DE10297692B4/de not_active Expired - Fee Related
- 2002-08-14 WO PCT/US2002/025997 patent/WO2004017438A1/en not_active Application Discontinuation
- 2002-08-14 CN CNB028281942A patent/CN100385702C/zh not_active Expired - Fee Related
- 2002-08-14 KR KR1020047016895A patent/KR100675989B1/ko not_active IP Right Cessation
- 2002-08-14 AU AU2002323170A patent/AU2002323170A1/en not_active Abandoned
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DE10297692T5 (de) | 2005-04-21 |
CN1620732A (zh) | 2005-05-25 |
KR100675989B1 (ko) | 2007-01-29 |
DE10297692B4 (de) | 2010-11-25 |
WO2004017438A1 (en) | 2004-02-26 |
CN100385702C (zh) | 2008-04-30 |
AU2002323170A1 (en) | 2004-03-03 |
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