AU2002323170A1 - Adhesive material for programmable device - Google Patents

Adhesive material for programmable device

Info

Publication number
AU2002323170A1
AU2002323170A1 AU2002323170A AU2002323170A AU2002323170A1 AU 2002323170 A1 AU2002323170 A1 AU 2002323170A1 AU 2002323170 A AU2002323170 A AU 2002323170A AU 2002323170 A AU2002323170 A AU 2002323170A AU 2002323170 A1 AU2002323170 A1 AU 2002323170A1
Authority
AU
Australia
Prior art keywords
adhesive material
programmable device
programmable
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002323170A
Other languages
English (en)
Inventor
Huei-Min Ho
Sean J. Lee
Tyler A. Lowrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU2002323170A1 publication Critical patent/AU2002323170A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
AU2002323170A 2002-08-14 2002-08-14 Adhesive material for programmable device Abandoned AU2002323170A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/025997 WO2004017438A1 (en) 2002-08-14 2002-08-14 Adhesive material for programmable device

Publications (1)

Publication Number Publication Date
AU2002323170A1 true AU2002323170A1 (en) 2004-03-03

Family

ID=31886105

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002323170A Abandoned AU2002323170A1 (en) 2002-08-14 2002-08-14 Adhesive material for programmable device

Country Status (5)

Country Link
KR (1) KR100675989B1 (ko)
CN (1) CN100385702C (ko)
AU (1) AU2002323170A1 (ko)
DE (1) DE10297692B4 (ko)
WO (1) WO2004017438A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524599B2 (en) * 2011-03-17 2013-09-03 Micron Technology, Inc. Methods of forming at least one conductive element and methods of forming a semiconductor structure
US8941432B2 (en) * 2012-08-31 2015-01-27 Advanced Micro Devices, Inc. Transitioning between resonant clocking mode and conventional clocking mode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222212B1 (en) * 1994-01-27 2001-04-24 Integrated Device Technology, Inc. Semiconductor device having programmable interconnect layers
US5903041A (en) * 1994-06-21 1999-05-11 Aptix Corporation Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6140191A (en) * 1998-09-21 2000-10-31 Advanced Micro Devices, Inc. Method of making high performance MOSFET with integrated simultaneous formation of source/drain and gate regions
US6569705B2 (en) * 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
US6770531B2 (en) * 2001-06-30 2004-08-03 Intel Corporation Adhesive material for programmable device
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6861267B2 (en) * 2001-09-17 2005-03-01 Intel Corporation Reducing shunts in memories with phase-change material
EP1318552A1 (en) * 2001-12-05 2003-06-11 STMicroelectronics S.r.l. Small area contact region, high efficiency phase change memory cell and fabrication method thereof
US6512241B1 (en) * 2001-12-31 2003-01-28 Intel Corporation Phase change material memory device
DE60220015T2 (de) * 2002-02-20 2008-01-10 Stmicroelectronics S.R.L., Agrate Brianza Kontaktstruktur, Phasenwechsel-Speicherzelle und deren Herstellungsverfahren mit Elimination von Doppelkontakten
DE60226839D1 (de) * 2002-02-20 2008-07-10 St Microelectronics Srl Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels Minigräben

Also Published As

Publication number Publication date
WO2004017438A1 (en) 2004-02-26
KR100675989B1 (ko) 2007-01-29
DE10297692T5 (de) 2005-04-21
CN100385702C (zh) 2008-04-30
KR20050018660A (ko) 2005-02-23
CN1620732A (zh) 2005-05-25
DE10297692B4 (de) 2010-11-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase